RHRG30120 Hyperfast Rectifier Diode Chip 1200V, 30A, VF 2.75V, trr = 65ns Part VRRM IF(AV)n VF Typ trr Typ Die Size RHRG75120 1200V 30A 2.75V 60ns 4.1 x 4.1 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • General Purpose • Hyperfast Recovery, trr = 70ns @ IF = 30A • Free Wheeling Diode • 1200V Reverse Voltage & High Reliability • Avalanche Energy Rated Maximum Ratings Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 1200 V VRWM Working Peak Reverse Voltage 1200 V VR DC Blocking Voltage 1200 V 1 IF(AV) Average Rectified Forward Current @ TC = 78°C 30 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 300 A 30 mJ -65 to 175 °C 3 EAVL Avalanche Energy (1A, 40mH) TJ, TSTG Operation Junction & Storage Temperature Electrical Characteristics, TJ = 25° unless otherwise noted Parameter VF Test Conditions Forward Voltage 2 IF = 30A 2 IR Reverse Current trr Reverse Recovery Time3 VR = 1200V Typ Max Units TC = 25°C - 2.75 3.2 V TC = 150°C - 1.8 2.6 V TC = 25°C - - 250 µA TC = 150°C mA - - 1 IF = 1A, dlF/dt = 100A/µs - 65 - IF =30A, dlF/dt = 100A/µs - 70 - 3 IF =30A, dIF/dt = 100A/µs - 48 - 3 IF =75A, dIF/dt = 100A/µs - 22 - ta Current Rise Time tb Current Fall Time 1. 2. 3. Min ns Notes: Performance will vary based on assembly technique and substrate choice Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Tested in discrete package, not subject to 100% production test at wafer level Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Symbol Ordering Guide Part Number Format Detail / Drawing RHRG30120MW Un-sawn wafer, electrical rejects inked Page 2 RHRG30120MF Sawn wafer on film-frame Page 3 RHRG30120MD Singulated die / chips in waffle pack Page 3 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Die Drawing – Dimensions in µm 4060 40 3048 3048 Passivated area 4060 ANODE Chip backside is CATHODE Mechanical Data Parameter Units Chip Dimensions Un-sawn 4060 x4060 µm Chip Thickness (Nominal) 250 µm Anode Pad Size 3048 x 3048 µm Wafer Diameter 127 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 6 µm Backside Metallisation & Thickness V/Ni/Ag 0.3 µm Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Anode Al 380µm X3 Page2 Topside Passivation Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 4.19mm ±0.13mm pocket size Y = 4.19mm ±0.13mm pocket size Z = 0.61mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 6 X 6 (36) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 1. Life support devices or systems are devices or systems which,