Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 600V isolation in a small package outline • High blocking voltage with low RDS(on) • High current 20A • High temperature 210OC • RoHS compliant • Reduction of heat sink requirements m i l e r P • HMP solder tinned leads available • Surface mountable Applications • Silicon Carbide (SiC) device, gives a superior high temperature performance • No reverse recovery time • Screening options available • Harsh environment motor drive Pin1 • Harsh environment inverter Pin2 • Induction heater ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other package options available Pin3 Figure 2: Circuit Diagram Absolute Maximum Ratings* Symbols Figure 1: SMD 0.5 (viewed from base of package) Values Units Drain Source Voltage 600 Volts ID Continuous Drain Current 20 Amps IAR Repetitive Avalanche Current ( ID = 20A, VDD = 50 V, L = 3 mH ) 20 Amps VGS Gate Source Voltage -10 / +25 Volts PTOT Total Power Dissipation 123 Watts VDS Parameters TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Values Thermal Resistance, Junction To Case 1.5 Units o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Electrical Characteristics Symbols V(BR)DSS VGS(th) Test Conditions Min Drain Source Breakdown VGS=0V, ID=100µA, TJ =25oC 600 VDS=10V, ID=1mA, TJ=-55oC 2.2 2.8 VDS=10V, ID=1mA, TJ=25oC 1.7 2.2 VDS=10V, ID=1mA, TJ=125oC 1.3 1.5 VDS=VGS, ID=1mA, TJ=210oC 1.0 1.3 m i l e r P Gate Threshold IDSS Zero Gate Voltage Drain IGSS Gate-Source Leakage Current RDS(On) y r a in Parameters Drain Source On State Resistance Typ Max Units Volts Volts VDS=600V, VGS=0V, TJ=25oC 1 100 VDS=600V, VGS=0V, TJ=210oC 10 450 µA VGS=20V, VDS=0V, TJ=25oC 0.25 VGS=20V, ID=20A, TJ=0oC 60 90 115 VGS=20V, ID=20A, TJ=25oC 70 100 125 VGS=20V, ID=20A, TJ=125oC 90 160 150 VGS=20V, ID=20A, TJ=210oC 120 200 250 Min Typ Max µA mΩ Built in Body Diode Electrical Characteristics Symbols VSD Parameters Diode Forward Voltage Test Conditions VGS=-5V, IF=10A, TJ =25oC 3.5 VGS=-2V, IF=10A, TJ =25oC 3.1 Units Volts Gate Charge Characteristics Symbols Parameters Qgs Gate to Source Charge Qgd Gate to Drain Charge Qg Gate Charge Total March 2014 Rev 1.0 Test Conditions Min Typ Max Units 10.8 VDD =400V, VGS = 0/20V, ID = 20A TJ =25oC 18.0 nC 49.2 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 y r a in m i l e r P DA = SMD 0.5 Package Type a = Batch code yyww = Date code yy = year ww = week (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions & Part Marking March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Power Mosfet 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com