MYXJ11200 17ABB

Silicon Carbide JFET Normally On
1200 Volt 17 Amp Hermetic
MYXJ11200-17ABB
Product Overview
Features
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Benefits
• High voltage 1200V
• Low on resistance RDS(On)
• High current 17A
• Voltage controlled
• High temperature 175°C
• Low gate charge
• BeO free and RoHS compliant
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• HMP solder tinned leads available
• Silicon Carbide (SiC) JFET exhibits low on resistance
RDS(On) and superior high temperature performance
• Extremely fast switching
• Screening options available
• Low intrinsic capacitance
Applications
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Surface mount
• Harsh environment motor drive
Figure 1: TO-257 Domed Lid
Flange Isolated
• Harsh environment inverter
• Switch power supplies
• Power factor correction modules
• Induction heating
• Other packaging options available
Pin 1
Pin 2 Pin 3
Figure 2: Circuit Diagram
Absolute Maximum Ratings*
Symbols
Parameters
Values
Units
VR
DC Reverse Voltage
1200
Volts
VGS
Gate Source Voltage
-30 to + 3
Volts
ID
Continuous Drain Current
17
Amps
IDM
Pulsed Drain Current (Tp=10ms, Half Sine Wave)
50
Amps
IFSM
Surge Peak Forward Current (Tp=10ms, Half Sine Wave )
45
Amps
PD
Total Power Dissipation
65
Watts
TJ & Tstg
TL
Junction Temperature Range & Storage Temperature Range
Soldering Temperature (Time =5 Seconds)
-55 to +175
o
250
o
Values
Units
C
C
Thermal Properties
Symbols
RθJC
March 2014 Rev 1.0
Parameters
Thermal Resistance, Junction To Case
2.3
o
C / Watt
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
Silicon Carbide JFET Normally On
1200 Volt 17 Amp Hermetic
MYXJ11200-17ABB
Electrical Characteristics
Symbols
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Parameters
Test Conditions
BVDS
Drain Source Breakdown
VGS=-20V, ID=1000µA, TJ =25oC
BVGS
Gate Source Breakdown
VGS=VDS, ID=1mA, TJ =25oC
Min
Typ
1200
1700
RDS(On)
VG(th)
Δ Δ ΔVG(th) / ΔTJ
RG
Total Gate Leakage Current
Drain Source On State Resistance
250
VDS=1200V, VGS=-20V, TJ =125oC
TBD
VDS=1200V, VGS=-20V, TJ =175oC
TBD
VGS=-20V, TJ =25oC
IG
V
20
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Total Drain Leakage Current
Units
V
-40
VDS=1200V, VGS=-20V, TJ =25oC
ID
Max
1
µA
100
VGS=-20V, TJ =125oC
100
VGS=-20V, TJ =175oC
100
VGS=2V, ID=17A, TJ =25oC
50
70
VGS=0V, ID=17A, TJ =25oC
60
80
µA
mΩ
VGS=2V, ID=17A, TJ =175oC
TBD
VGS=0V, ID=17A, TJ =175oC
TBD
Gate Threshold Voltage
VGS=1V, ID=1mA, TJ =25oC
Temp Cofficient of Gate Threshold
Voltage
VGS=-20V, ID=250µA
-1.8
mV/oC
Gate Resistance
VGS= 0V, f= 5MHz
1.5
Ω
50
mA
-7
-5.5
-4
V
VGS=2.7V, TJ =25oC
IG(FW)
Gate Forward Current
VGS=2.4V, TJ =125oC
VGS=2.3V, TJ =175oC
Charge Characteristics
Symbols
Parameters
Test Conditions
Min
Typ
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
120
QG
Total Gate Charge
106
QGD
Gate-Drain Charge
QGS
Gate-Source Charge
March 2014 Rev 1.0
Max
Units
900
VDS=100V, VGS=-20V, f=1MHz
VDS= 0V to 960V, VGS=-15V
120
82
pF
nC
9
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
Silicon Carbide JFET Normally On
1200 Volt 17 Amp Hermetic
MYXJ11200-17ABB
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yywwa = Date code and batch
   
 
  
   
yy = year
ww = week
a = batch
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(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
3
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
Silicon Carbide JFET Normally On
1200 Volt 17 Amp Hermetic
MYXJ11200-17ABB
* Absolute Maximum Ratings Disclaimer
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Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress
ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions
for any duration may affect device reliability and operational life.
Disclaimer
MICROSS COMPONENTS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MICROSS COMPONENTS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS
WRITTEN APPROVAL OF MICROSS COMPONENTS.
As used herein:
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1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c)
whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a
significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Document Title
Silicon Carbide JFET normally on 1200 Volt 17 Amp Hermetic SMD MYXJ11200-17AAB
Revision History
Revision #
History
Release Date
1.0
Initial release
March 2014
March 2014 Rev 1.0
Status
Preliminary
4
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com