Silicon Carbide JFET Normally On 1000 Volt 17 Amp Hermetic SMD MYXJ11000-17DA0 Product Overview Features y r a in Benefits • High voltage 1000V-Recommend under fill at board assembly to maintain isolation. • Low on resistance RDS(On) • High current 17A • Low gate charge • High temperature 175°C • Low intrinsic capacitance • BeO free and RoHS compliant • Voltage controlled m i l e r P • HMP solder tinned leads available Applications • Silicon Carbide (SiC) JFET exhibits low on resistance RDS(On) and superior high temperature performance • Harsh environment motor drive • Extremely fast switching • Switch power supplies • Screening options available ºº ºº ºº Commercial high temperature In accordance with MIL-PRF-19500 Other options available on request • Surface mount Figure 1: SMD 0.5 • Harsh environment inverter • Power factor correction modules Pad 1 Pad 3 • Induction heating • Other packaging options available Pad 2 ( Large Pad) Figure 2: Circuit Diagram Absolute Maximum Ratings Symbols Parameters Values Units VR DC Reverse Voltage 1000 Volts VGS Gate Source Voltage -30 to + 3 Volts ID Continuous Drain Current 17 Amps IDM Pulsed Drain Current (Tp=10ms, Half Sine Wave) 50 Amps IFSM Surge Peak Forward Current (Tp=10ms, Half Sine Wave ) 45 Amps PD Total Power Dissipation 93.7 Watts TJ & Tstg TL Junction Temperature Range & Storage Temperature Range Soldering Temperature (Time =5 Seconds) -55 to +175 o 250 o Values Units C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 1.6 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide JFET Normally On 1000 Volt 17 Amp Hermetic SMD MYXJ11000-17DA0 Electrical Characteristics Symbols y r a in Parameters Test Conditions BVDS Drain Source Breakdown VGS=-20V, ID=1000µA, TJ =25oC BVGS Gate Source Breakdown VGS=VDS, ID=1mA, TJ =25oC Min RDS(On) VG(th) Δ Δ ΔVG(th) / ΔTJ RG Total Gate Leakage Current Drain Source On State Resistance 1000 1000 V V 250 VDS=1000V, VGS=-20V, TJ =125oC TBD VDS=1000V, VGS=-20V, TJ =175oC TBD VGS=-20V, TJ =25oC IG Units 20 m i l e r P Total Drain Leakage Current Max -40 VDS=1000V, VGS=-20V, TJ =25oC ID Typ 1 µA 100 VGS=-20V, TJ =125oC 100 VGS=-20V, TJ =175oC 100 VGS=2V, ID=17A, TJ =25oC 50 70 VGS=0V, ID=17A, TJ =25oC 60 80 µA mΩ VGS=2V, ID=17A, TJ =175oC TBD VGS=0V, ID=17A, TJ =175oC TBD Gate Threshold Voltage VGS=1V, ID=1mA, TJ =25oC Temp Cofficient of Gate Threshold Voltage VGS=-20V, ID=250µA -1.8 mV/oC Gate Resistance VGS= 0V, f= 5MHz 1.5 Ω 50 mA -7 -5.5 -4 V VGS=2.7V, TJ =25oC IG(FW) Gate Forward Current VGS=2.4V, TJ =125oC VGS=2.3V, TJ =175oC Charge Characteristics Symbols Parameters Test Conditions Min Typ CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance 120 QG Total Gate Charge 106 QGD Gate-Drain Charge QGS Gate-Source Charge March 2014 Rev 1.0 Max Units 900 VDS=100V, VGS=-20V, f=1MHz VDS= 0V to 960V, VGS=-15V 120 82 pF nC 9 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide JFET Normally On 1000 Volt 17 Amp Hermetic SMD MYXJ11000-17DA0 y r a in m i l e r P M Y X J 1 1000- 17DAO yywwa yywwa = Date code and batch yy = year ww = week a = batch (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide JFET Normally On 1000 Volt 17 Amp Hermetic SMD MYXJ11000-17DA0 * Absolute Maximum Ratings Disclaimer y r a in Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Disclaimer MICROSS COMPONENTS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MICROSS COMPONENTS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF MICROSS COMPONENTS. As used herein: m i l e r P 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Document Title Silicon Carbide JFET normally on 1000 Volt 17 Amp Hermetic SMD MYXJ11000-17DA0 Revision History Revision # History Release Date Status 1.0 Initial release March 2014 Premilinary March 2014 Rev 1.0 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com