SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R(on) • High voltage 1200V isolation in a small package outline • Reduction of heat sink requirements • High current 20A • High temperature 210OC • RoHS compliant m i l e r P Applications • HMP solder tinned leads available • Electrically isolated flange / case • Silicon Carbide (SiC) device, gives a superior high temperature performance • Fast temperature independent switching • Screening options available • Harsh environment motor drive • Induction heater • DC-DC converters Pin6 Pin5 Pin4 • Aerospace power electronics ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Excellent capability to withstand short circuit Absolute Maximum Ratings* (Per single device) Symbols Figure 1: TO-259 (6 PIN) • Harsh environment inverter Parameters Pin1 Pin2 Pin3 Figure 2: Circuit Diagram Values Units VCEO Drain Source Voltage VEC Emitter-Collector Voltage VCBO Collector-Base Voltage 1200 VEC Emitter-Base Voltage 30 IC Constant Collector Current 20 ICM Pulsed Collector Current (tp < 10ms) 40 IB Constant Base Current (DC) 3 IBM Pulsed Base Current (tp < 10ms) 6 Tstg Storage Temperature TJ Operating Junction Temperature 210 Total Power Dissipation 154 W Values Units PTOT 1200 30 V A -55 to 210 °C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 1.2 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Electrical Characteristics (Per single device) Symbols ICEO hFE VCE(SAT) Parameters Collector cut off current y r a in Test Conditions Min TJ = 25°C, VCE = 600 V TBD TJ = 25°C, VCE = 1200 V TBD TJ = 210°C, VCE = 600 V TBD TJ = 210°C, VCE = 1200 V TBD Pulse Duration = 300µs, VCE = 2.5 V, 25°C, IC = 3A 20 Pulse Duration = 300µs, VCE = 2.5 V, 25°C, IC = 20A 50 Pulse Duration = 300µs, VCE = 2.5 V, 150°C, IC = 3A 15 Pulse Duration = 300µs, VCE = 2.5 V, 150°C, IC = 20A 35 Pulse Duration = 300µs, VCE = 2.5 V, 210°C, IC = 3A TBD Pulse Duration = 300µs, VCE = 2.5 V, 210°C, IC = 20A TBD Pulse Duration = 300µs, IC = 20 A, IB = 2 A, TJ = 25°C 0.5 Collector-Emitter saturation voltage Pulse Duration = 300µs, IC = 20 A, IB = 2 A, TJ = 150°C 0.75 Pulse Duration = 300µs, IC = 20 A, IB = 2 A, TJ = 210°C 1.0 Max Units nA m i l e r P DC Current gain Typ V Dynamic Characteristics (Per single device) Symbols Parameters Min Typ Max Units VCB = 0 V, TJ = 25°C, f = 100kHz 2500 VCB = 40 V, TJ = 25°C, f = 100kHz 650 VBE = 0 V, TJ = 25°C, f = 100kHz 6 VBE = 3.2 V, TJ = 25°C, f = 100kHz 16 Base-Collector charge VCB = 800 V, TJ = 25°C, f = 100kHz 35 nC Base-Emitter charge VBE = 3.2 V, TJ = 25°C, f = 100kHz 0.5 nC CBC Base-Collector capacitance CBE Base-Emitter capacitance QBC QBE March 2014 Rev 1.0 Test Conditions pF nF 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB y r a in m i l e r P M I CROS S A B M Y X B212 0 0-2 0 G # #### ## yyww GA = TO-259 Package Type ####### = Batch code yyww = Date code yy = year ww = week (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions & Part Marking March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Power BJT Double1200 Volt 20 Amp Hermetic MYXB21200-20GAB Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com