H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications. Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 50 s and pulse duty cycle = 2%. DESCRIPTION The high power HVV1011-600 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 1090MHz. The high voltage HVVFET technology produces over 600W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSW R at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM H V V1011-600 H igh Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! For TCAS, I F F and Mode-S Applications ! ! ! The innovative Semiconductor Company! ! ! ! ! ABSOLUTE MAXIMUM RATING (IEC 134) "#$%&'! -2""! -8""! <2"=$)>?! (29! (10! J"! ()*)$+,+*! 2*)103"&.*4+!-&',)5+! 8),+3"&.*4+!-&',)5+! 2*)10!@.**+0,! (&C+*!21DD1E),1&0! <0E.,!(&C+*! ",&*)5+!J+$E+*),.*+! JM! M.04,1&0!J+$E+*),.*+! -)'.+! /01,! 67! -! 39:;!9:! -! A:! B! FG7:! H! FI! H! 3A:!,&! L@! K97:! F::! L@! THERMAL/RUGGEDNESS PERFORMANCE ! ! !"#$%&' LJM@ F! "#$%&'! TSJF! ()*)#+,+*' -).' /01,' JN+*$)'!O+D1D,)04+! :P:I7! L@QH! S)>! F:Y9! /01,D! -"HO! ()*)$+,+*! T&)R! S1D$),4N! J&'+*)04+! J+D,!@&0R1,1&0! U!V!9:6:!SWX! ! ! ! The HVV1011-600 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. ! ! ! ! ELECTRICAL CHARACTERISTICS ! "#$%&'! -ZO=2""?! <2""! <8""! 8(F! <OTF! dž2F! (&.,! -8"=c?G! -JW! ()*)$+,+*! 2*)103"&.*4+!Z*+)[R&C0! 2*)10!T+)[)5+!@.**+0,! 8),+!T+)[)5+!@.**+0,! (&C+*!8)10! <0E.,!O+,.*0!T&DD! 2*)10!^__141+04#! (&C+*!b.,! 8),+!c.1+D4+0,!-&',)5+! JN*+DN&'R!-&',)5+! @&0R1,1&0D! -8"V:-;<2V7$B! -8"V:-;-2"V7:-! -8"V7-;-2"V:-! UV9:6:SWX;!(10V9FH! UV9:6:SWX;!(10V9FH! UV9:6:SWX;!(10V9FH! UV9:6:SWX;!(10V9FH! -22V7:-;<2cV9::$B! -22V7-;!<2VG::\B! ! S10! 67! 3! 3! 9I! 3! 7F! 3! 9P:! :PI! J#E14)'! 9:F! 9::! F! 9]! 39]! 7`! I97! 9PA! 9PF! S)>! 3! A::! 9:! 3! 39F! 3! 3! 9PI! 9PI! /01,! -! \B! \B! RZ! RZ! a! H! -! -! 3! 3! 3! 3! 9IP7! 39F! 77! `I:! 3! 3! 3! 3! RZ! RZ! a! H! Typical performance at 1030 MHz at an input power of 12W. ! 8(F! <OTF! dž2F! (&.,! (&C+*!8)10! <0E.,!O+,.*0!T&DD! 2*)10!^__141+04#! (&C+*!b.,! UV9:G:SWX;!(10V9FH! UV9:G:SWX;!(10V9FH! UV9:G:SWX;!(10V9FH! UV9:G:SWX;!(10V9FH! ! ! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS15A 07/15/2010 2 H V V1011-600 H igh Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! For TCAS, I F F and Mode-S Applications ! ! ! PULSE CHARACTERISTICS ! ! "#$%&'! ,*A! ,_A! (2A! ()*)$+,+*! O1D+!J1$+! U)''!J1$+! (.'D+!2*&&E! @&0R1,1&0D! UV9:6:SWX! UV9:6:SWX! UV9:6:SWX! S10! 3! 3! 3! J#E14)'! dG7! d97! :PA7! S)>! 7:! 7:! :P`! /01,D! 0"! 0"! RZ! ! The innovative Semiconductor Company! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with pulse width = 50µsec, duty cycle = 2% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. ! ! ! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS15A 07/15/2010 3 The innovative Semiconductor Company! H V V1011-600 H igh Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty For TCAS, I F F and Mode-S Applications Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1090MHz. !!!!!!!!!!!! Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1090MHz. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS15A 07/15/2010 4 H V V1011-600 H igh Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! For TCAS, I F F and Mode-S Applications ! The innovative Semiconductor Company! ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS15A 07/15/2010 5 The innovative Semiconductor Company! H V V1011-600 H igh Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty For TCAS, I F F and Mode-S Applications Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 50µs pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 2dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 18.7 787 59.0 0C 17.9 802 59.0 25C 17.4 733 58.7 85C 16.6 580 57.6 ! W--9:993`::!(+*_&*$)04+!&e+*!J+$E+*),.*+ HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS15A 07/15/2010 6 The innovative Semiconductor Company! H V V1011-600 H igh Voltage, H igh Ruggedness L-Band High Power Pulsed Transistor 1030/1090 MHz, 50µs Pulse, 2% Duty ! For TCAS, I F F and Mode-S Applications ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !! ! !!!!! Test Circuit Impedances Frequency Zin* (ohms) Zout* (ohms) 1030MHz 0.95-j1.35 1.1-j2.7 1090MHz 1.0-j1.0 1.0-j2.3 Zin* Zout* Input Output Impedance Matching Network Impedance Matching Network HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS15A 07/15/2010 7 > L L'&''#,&& > _]^ LebjW][" > _]^ Hk]][Zd[ii B#8WdZ >_]^ Fem[h Fkbi[Z JhWdi_ijeh '&)&%'&/& C>p" +&ªi Fkbi[" ( :kjo <eh J97I" ? < < WdZ CeZ[#I 7ffb_YWj_edi Demonstration Board Outline Part Description Demonstration Circuit Board Picture Part Number C1, C2: 39 pF AVX 805 Chip Capacitor 712-1388-1-ND C3,C7: 39 pF ATC 1210 100B Chip Capacitor 478-2646-1-ND C4: 1K pF 100V Chip Capacitor (X7R 1206) 399-1222-2-ND C5, C8: 10K pF 100V Chip Capacitor (X7R 1206) 399-1236-2-ND C6: 10 uF 6V Tantalum SMD 478-3134-1-ND C9, C10: 220 uF 63V Elect FK SMD PCE3484TR-ND R1: 470 Ohms Chip Resistor (1206) 311-470ERCT-ND R2: 100 K Ohms Chip Resistor (1206) 311-100KERCT-ND RF Connectors Type "N" RF connectors 5919CC-TB-7 DC Drain Conn Connector Jack Banana Nylon Red J151-ND DC Ground Conn.Connector Jack Banana Nylon Black J152-ND DC Gate Conn. Connector Jack Banana Nylon Green J153-ND PCB Board PCB: 25 mils thick, 10.2 Dielectric, 1 oz Copper Device Clamp HV800 Package Nylon Clamp Foot FXT000116 Heat Sink Cool Innovations Aluminum Heat Sink 3-252510RS3411 4-40 X 1/4 Stainless Steel Socket Hex Head S.S. Screws (4) P242393 Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head SCAS-0440-08C Metal Washer (6) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M Alloy Screws (2) 4-40 X 3/4 Alloy Socket Cap Screw Head SCAS-0440-12M HVV1011-600 Demonstration Circuit Board Bill of Materials Manufacturer Digi Key Digi Key Digi Key Digi Key Digi Key Digi Key Digi Key Digi Key Coaxicom DIGI-KEY DIGI-KEY DIGI-KEY DS Electronics Cool Innovation Cool Innovation Copper State Bolt Small Parts Inc Small Parts Inc Small Parts Inc PACKAGE DIMENSIONS ASI PART NUMBER JDATE CODE inches mm DRAIN Note: Drawing is not actual size. GATE SOURCE ASI Semiconductor, Inc. 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