FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%. DESCRIPTION The high power HVV1012-550 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage MOSFET technology produces over 550W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV1012-550 Evaluation Kit Part Number: HVV1012-550-EK REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! The innovative Semiconductor Company! ! ! ! ! ! ABSOLUTE MAXIMUM RATING (IEC 134) "#$%&'! -2""! -8""! <2"=$)>?! (29! (10! I"! ()*)$+,+*! 2*)103"&.*4+!-&',)5+! 8),+3"&.*4+!-&',)5+! 2*)10!@.**+0,! (&C+*!21DD1E),1&0! <0E.,!(&C+*! ",&*)5+!I+$E+*),.*+! IL! L.04,1&0!I+$E+*),.*+! -)'.+! /01,! 67! -! 39:;!9:! -! A:! B! 7:::! F! GH! F! 3A:!,&! K@! J97:! G::! K@! THERMAL/RUGGEDNESS PERFORMANCE ! ! !"#$%&' LJL@ G! "#$%&'! TSIG! ()*)#+,+*' -).' /01,' IM+*$)'!N+D1D,)04+! :O:P! K@QF! ()*)$+,+*! T&)R! S1D$),4M! I&'+*)04+! I+D,!@&0R1,1&0! U!V!997:!SWX! S)>! G:Y9! /01,D! -"FN! ! ! ! The HVV1012-550 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. ! ! ! ! ELECTRICAL CHARACTERISTICS ! ! "#$%&'! ()*)$+,+*! @&0R1,1&0D! S10! -ZN=2""?! <2""! <8""! 8(G! <NTG! dž2G! (&.,! -8"=b?P! -IW! 2*)103"&.*4+!Z*+)[R&C0! 2*)10!T+)[)5+!@.**+0,! 8),+!T+)[)5+!@.**+0,! (&C+*!8)10! <0E.,!N+,.*0!T&DD! 2*)10!_``141+04#! (&C+*!&.,! 8),+!b.1+D4+0,!-&',)5+! IM*+DM&'R!-&',)5+! -8"V:-;<2V7$B! -8"V:-;-2"V7:-! -8"V7-;-2"V:-! UV9:G7;!997:SWX;!(10V9GF! UV9:G7;!997:SWX;!(10V9GF! UV9:G7;!997:SWX;!(10V9GF! UV997:SWX;!(10V9GF! -22V7:-;<2bV9::$B! -22V7-;!<2VP::\B! 67! 3! 3! 9]O7! 3! AA! 3! 9O:! :O^! I#E14 )'! 9:G! 9::! G! 9^OP! 39G! AH! ]A:! 9OA! 9OG! 3! 3! 3! 3! 9^! 399! 7A! ]A:! S)>! /01,! 3! A::! 9:! 3! 3^! 3! 3! 9O^! 9O^! -! \B! \B! RZ! RZ! a! F! -! -! 3! 3! 3! 3! RZ! RZ! a! F! Typical performance at 1025MHz with an input power of 12W. ! 8(G! <NTG! dž2G! (&.,! (&C+*!8)10! <0E.,!N+,.*0!T&DD! 2*)10!_``141+04#! (&C+*!&.,! UV9:G7SWX;!(10V9GF! UV9:G7SWX;!(10V9GF! UV9:G7SWX;!(10V9GF! UV9:G7SWX;!(10V9GF! ! ! HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS18A 07/15/2010 2 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! PULSE CHARACTERISTICS ! ! "#$%&'! ,*A! ,`A! (2A! ()*)$+,+*! N1D+!I1$+! U)''!I1$+! (.'D+!2*&&E! @&0R1,1&0D! UV997:SWX! UV997:SWX! UV997:SWX! S10! 3! 3! 3! I#E14)'! cP7! c97! :O9! S)>! 7:! 7:! :OP! /01,D! 0D! 0D! RZ! ! The innovative Semiconductor Company! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 12W input power measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS18A 07/15/2010 3 The innovative Semiconductor Company! HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty For Airborne DME Applications Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1150MHz. Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1150MHz. HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. !!!!!!!!!!!! EG-01-DS18A 07/15/2010 4 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! The innovative Semiconductor Company! ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. ! !!!!!!!!!!!! Typical device performance under Class AB mode of operation and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at an input power of 12W. HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. ! EG-01-DS18A 07/15/2010 5 The innovative Semiconductor Company! HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty For Airborne DME Applications Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 10µs pulse width and 1% duty cycle with VDD = 50 V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 1.5dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 19.5 622 57.9 0C 18.9 695 58.4 25C 18.1 681 58.3 85C 15.7 561 57.5 ! W--9:9G377:!(+*`&*$)04+!&d+*!I+$E+*),.*+ HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS18A 07/15/2010 6 The innovative Semiconductor Company! HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty ! For Airborne DME Applications ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !! ! !!!!! Test Circuit Impedances Frequency Zin* (ohms) Zout* (ohms) 1025MHz 0.95-j1.4 1.2-j2.8 1060MHz 0.97-j1.2 1.1-j2.5 1150MHz 1.1-j0.66 1.0-j1.9 Zin* Zout* Input Output Impedance Matching Network Impedance Matching Network HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2009 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS18A 07/15/2010 7 HVV1012-550 High Voltage, High Ruggedness L-Band High Power Pulsed Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty For Airborne DME Applications Demonstration Board Outline Part Description Demonstration Circuit Board Picture Part Number C1, C2: 39 pF AVX 805 Chip Capacitor 712-1388-1-ND C3,C7: 39 pF ATC 1210 100B Chip Capacitor 478-2646-1-ND C4: 1K pF 100V Chip Capacitor (X7R 1206) 399-1222-2-ND C5, C8: 10K pF 100V Chip Capacitor (X7R 1206) 399-1236-2-ND C6: 10 uF 6V Tantalum SMD 478-3134-1-ND C9, C10: 220 uF 63V Elect FK SMD PCE3484TR-ND R1: 470 Ohms Chip Resistor (1206) 311-470ERCT-ND R2: 100 K Ohms Chip Resistor (1206) 311-100KERCT-ND RF Connectors Type "N" RF connectors 5919CC-TB-7 DC Drain Conn Connector Jack Banana Nylon Red J151-ND DC Ground Conn.Connector Jack Banana Nylon Black J152-ND DC Gate Conn. Connector Jack Banana Nylon Green J153-ND PCB Board PCB: 25 mils thick, 10.2 Dielectric, 1 oz Copper Device Clamp HV800 Package Nylon Clamp Foot FXT000116 Heat Sink Cool Innovations Aluminum Heat Sink 3-252510RS3411 S.S. Screws (4) 4-40 X 1/4 Stainless Steel Socket Hex Head P242393 Alloy Screws (4) 4-40 X 1/2 Alloy Socket Cap screw Hex Head SCAS-0440-08C Metal Washer (6) #4 Washer Zinc PLTD Steel Lock ZSLW-004-M Alloy Screws (2) 4-40 X 3/4 Alloy Socket Cap Screw Head SCAS-0440-12M Manufacturer Digi Key Digi Key Digi Key Digi Key Digi Key Digi Key Digi Key Digi Key Coaxicom DIGI-KEY DIGI-KEY DIGI-KEY DS Electronics Cool Innovation Cool Innovation Copper State Bolt Small Parts Inc Small Parts Inc Small Parts Inc HVV1012-550 Demonstration Circuit Board Bill of Materials PACKAGE DIMENSIONS ASI PART NUMBER JDATE CODE inches mm DRAIN Note: Drawing is not actual size. GATE SOURCE ASI Semiconductor, Inc. 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