REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING (IEC 134) "#$%&'! -2""! -8""! <2"=$)>?! (29! (10! J"! ()*)$+,+*! 2*)103"&.*4+!-&',)5+! 8),+3"&.*4+!-&',)5+! 2*)10!@.**+0,! (&C+*!21DD1E),1&0! <0E.,!(&C+*! ",&*)5+!J+$E+*),.*+! JM! M.04,1&0!J+$E+*),.*+! -)'.+! /01,! 67! -! 39:;!9:! -! 9A! B! FGA! H! FIA! H! 3A:!,&! L@! K97:! G::! L@! THERMAL/RUGGEDNESS PERFORMANCE !"#$%&' LJM@ ! ! G! "#$%&'! SRJG! ()*)#+,+*' -).' /01,' JN+*$)'!O+D1D,)04+! :I7A! L@PH! ()*)$+,+*! S&)Q! R1D$),4N! J&'+*)04+! J+D,!@&0Q1,1&0! T!U!9A::!RVW! R)>! G:X9! /01,D! -"HO! ! ! The HVV1214-140 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. ! ELECTRICAL CHARACTERISTICS "#$%&'! -YO=2""?! <2""! <8""! 8(G! <OSG! dž2G! -8"=b?F! -JV! ()*)$+,+*! 2*)103"&.*4+!Y*+)ZQ&C0! 2*)10!S+)Z)5+!@.**+0,! 8),+!S+)Z)5+!@.**+0,! (&C+*!8)10! <0E.,!O+,.*0!S&DD! 2*)10!^__141+04#! 8),+!b.1+D4+0,!-&',)5+! JN*+DN&'Q!-&',)5+! ! @&0Q1,1&0D! -8"U:-;<2U7$B! -8"U:-;-2"U7:-! -8"U7-;-2"U:-! TU9A::RVW! TU9A::RVW! TU9A:::RVW! -22U7:-;<2bU9::$B! -22U7-;!<2UF::[B! R10! 67! 3! 3! 9\! 3! AA! 9I9! :I]! J#E14)'! 9:G! 7:! 9:! 96I7! 3]! A`! 9IA7! 9IG! R)>! 3! 9::! 9::! 3! 37! 3! 9I\! 9I]! /01,! -! [B! 0B! QY! QY! a! -! -! ! ! PULSE CHARACTERISTICS ! ! "#$%&'! ,*A! ,_A! (2A! ()*)$+,+*! O1D+!J1$+! T)''!J1$+! (.'D+!2*&&E! @&0Q1,1&0D! TU9A::RVW! TU9A::RVW! TU9A::RVW! R10! 3! 3! 3! J#E14)'! cG7! c97! :I77! R)>! 7:! 7:! :I\! /01,D! 0"! 0"! QY! Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 140W output power measured at the 10% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2010 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO22X1 1/5/10 2 The innovative Semiconductor Company! HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz. !!!!!!!!!!!! Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 1400MHz. HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2010 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO22X1 1/5/10 3 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications ! The innovative Semiconductor Company! ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W. ! !!!!!!!!!!!! ! Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W. HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2010 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO22X1 1/5/10 4 The innovative Semiconductor Company! HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications Typical device performance under Class AB mode of operation at 1400MHz and pulse conditions of 200µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology shows less than 1.6dB of power degradation over an extreme case temperature rise of 125°C. ! HVV1214-140 Performance over Temperature HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2010 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO22X1 1/5/10 5 The innovative Semiconductor Company! HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !! ! !!!!! Zo = 10 ȍ ZIN* 1030MHz ZOUT* 1030MHz Test Circuit Impedances Frequency Zin* (ohms) Zout* (ohms) 1200MHz 1.7-j4.1 4.5-j7.6 1250MHz 1.6-j3.4 4.1-j6.7 1300MHz 1.5-j2.9 3.9-j6.0 1350MHz 1.3-j2.4 3.6-j5.2 1400MHz 1.2-j1.8 3.4-j4.5 Zin* Zout* Input Output Impedance Matching Network Impedance Matching Network HVVi Semiconductors, Inc. st 10235 S. 51 St. Suite 100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2010 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO22X1 1/5/10 6 HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications Demonstration Board Outline Part C1, C2: C3: C4: C5: C6: C7: C8,C9: C10,C12: C11,C13: C14: C15, C16: R1: R2: RF Connectors DC Drain Conn DC Ground Conn. DC Gate Conn. PCB Board Device Clamp Heat Sink S.S. Screws (4) Alloy Screws (4) Metal Washer (6) Alloy Screws (2) Example of a Demonstration Circuit Description 100 pF ATC 100B Chip Capacitor 2.4 pF ATC 100B Chip Capacitor 1.2 Pf ATC 100B Chip Capacitor 3.9 pF ATC 100B Chip Capacitor 2.4 pF ATC 100B Chip Capacitor 15 pF ATC 100B Chip Capacitor 47 pf ATC 100B Chip Capacitor 1K pF 100V Chip Capacitor (X7R 1206) 10K pF 100V Chip Capacitor (X7R 1206) 10 uF 63V Elect FK SMD 100 uF 63V Elect FK SMD 10 Ohms Chip Resistor (1206) 1 K Ohms Chip Resistor (1206) Type "N" RF connectors Connector Jack Banana Nylon Red Connector Jack Banana Nylon Black Connector Jack Banana Nylon Green PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper Part Number 100B101JP500X 100B2R4JP500X 100B1R2JP500X 100B3R9JP500X 100B2R4JP500X 100B150JP500X 100B470JP500X C1206C102K1RACTU C1206C103K1RACTU PCE3479CT-ND PCE3483CT-ND ERJ8GEYJ100V ERJ8GEYJ102V 5919CC-TB-7 J151-ND J152-ND J153-ND Cool Innovation Nylon Clamp Foot Cool Innovations Aluminum Heat Sink FXT000158 3-252510RS3394 P242393 SCAS-0440-08C ZSLW-004-M SCAS-0440-12M 4-40 X 1/4 Stainless Steel Socket Hex Head 4-40 X 1/2 Alloy Socket Cap screw Hex Head #4 Washer Zinc PLTD Steel Lock 4-40 X 3/4 Alloy Socket Cap Screw Head Manufacturer ATC ATC ATC ATC ATC ATC ATC Kemet Kemet DIGI-KEY DIGI-KEY Panasonic Panasonic Coaxicom DIGI-KEY DIGI-KEY DIGI-KEY DS Electronics Cool Innovation Cool Innovation Copper State Bolt Small Parts Inc Small Parts Inc Small Parts Inc HVV11214-100 Demonstration Circuit Board Bill of Materials PACKAGE DIMENSIONS DRAIN GATE ASI PART NUMBER JDATE CODE inches mm SOURCE Note: Drawing is not actual size. ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.