The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including Airborne DME, IFF, TCAS and Mode-S applications. MODE FREQUENCY VDD IDQ Power GAIN EFFICIENCY IRL (MHz) (V) (mA) (W) (dB) (%) (dB) 1150 50 100 250 19.5 48 20:1 Class AB Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 1ms. DESCRIPTION The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology produces over 250W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power. ORDERING INFORMATION Device Part Number: HVV1012-250 Demo Kit Part Number: HVV1012-250-EK Available through Richardson Electronics (http://rfwireless.rell.com/) HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/11/08 1 The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness HVV1012-250 High Voltage, High Ruggedness HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse,1025-1150 1% DutyMHz, Cycle 10μs Pulse, 1% Duty Cycle 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications For Airborne DME, TCAS and IFF Applications For Airborne DME, TCAS and IFF Applications TM ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS Conditions Min VBR(DSS) Breakdown VGS=0V,ID=5mA 95 Drain-Source IDSS Drain Leakage Current VGS=0V,VDS=48V IGSS Gate Leakage VGS=5V,VDS=0V Current 1 P G Power Gain F=1150MHz 17.5 1 IRL Input Return Loss F=1150MHz 1 D η Drain Efficiency F=1150MHz 46 2 VGS(Q) Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 VTH Threshold Voltage VDD=5V, ID=300μA 0.7 The Theinnovative innovativeSemiconductor SemiconductorCompany! Company! Symbol Parameter Unit V μA μA dB dB % V V PULSE CHARACTERISTICS Pulse CHARACTERISTICS PULSE CHARACTERISTICS Symbol 1 Tr 1 Tf 1 PD Parameter F=1150MHz F=1150MHz F=1150MHz Min Typical Max <40 50 - <15 50 - 0.25 0.5 The HVV1012-250 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR atrated output power and nominal operating voltage across the frequency band of operation. 1 NOTE: All parameters measured under pulsed conditions at 250W output power measured at the 10% of the pulse with pulse width = 10μsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadpoint band matched test fixture. 2 NOTE: AmountAll of parameters gate voltage required to attain current. 1.) NOTE: measured undernominal pulsedquiescent conditions at 250W output power 1.) NOTE: All measured under pulsed at 250W output power measured at parameters the 10% point of the pulse with pulseconditions width = 10µsec, duty cycle = 1% measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 1% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. and = 50V, IDQ =of 100mA a broadband matched test nominal fixture. quiescent current. 2.) VDD NOTE: Amount gate in voltage required to attain 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. HVVi Inc. 10235Semiconductors, S. 51stst St. Suite 100 10235 S. 51 Suite 100 Phoenix, Az.St. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified ISO 9001:2000 Tel: (866) 429-HVVi (4884)Certified or visit www.hvvi.com Tel: (866) 429-HVVi (4884) or visit © 2008 HVVi Semiconductors, Inc. www.hvvi.com All Rights Reserved. Unit nS nS dB RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE RUGGEDNESS PERFORMANCE Conditions Rise Time Fall Time Pulse Droop THERMAL PERFORMANCE THERMAL PERFORMANCE Thermal CHARACTERISTICS Typical Max 102 50 200 1 5 19.5 -7 -4 48 1.45 1.8 1.2 1.7 EG-01-DS09A 12/11/08 2 EG-01-DS09A EG-01-DS09A 12/12/08 12/12/082 The innovative Semiconductor Company! High Voltage, High Ruggedness HVV1012-250 High Voltage,HVV1012-250 High Ruggedness L-Band Avionics Pulsed PowerL-Band Transistor Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS andFor IFF Applications Airborne DME, TCAS and IFF Applications TM Zo = 10 The innovative Semiconductor Company! ZIN* 1025MHz ZOUT* 1025MHz HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified © 2008 HVVi Semiconductors, Inc. All Rights Reserved. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/12/08 EG-01-DS09A 3 12/11/08 3 The innovative Semiconductor Company! The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle The innovative Semiconductor Company! For Airborne DME, TCAS and IFF Applications HVV1012-250 High Voltage, High Ruggedness HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse,1025-1150 1% Duty Cycle MHz, 10μs Pulse, 1% Duty Cycle For Airborne DME, TCAS and Applications ForIFF Airborne DME, TCAS and IFF Applications TM Demonstration Board Outline Demonstration Circuit Board Picture Board Outline Circuit Board Picture (AutoCAD FilesDemonstration for Demonstration Board availableDemonstration online at www.hvvi.com/products) (AutoCAD Files for Demonstration online at www.hvvi.com/products) Demonstration Board Outline Board available Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) HVV1012-250 Demonstration Circuit Board Bill of Materials HVV1012-250 Demonstration Board of Materials HVV1012-250 Demonstration Circuit Circuit Board Bill Bill of Materials HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044Inc. HVVi Semiconductors, 10235 S. 51st St. Suite 100 10235Phoenix, S. 51st St. AZ.Suite 85044100 Phoenix, Az. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified © 2008 HVVi Semiconductors, Inc. All Rights Reserved. ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Tel: HVVi (866)Semiconductors, 429-HVVi (4884) www.hvvi.com © 2008 Inc.orAllvisit Rights Reserved. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS09A 12/12/08 EG-01-DS09A 4 EG-01-DS09A 12/11/08 412/12/08 4 The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10μs Pulse, 1% Duty Cycle 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications For Airborne DME, TCAS and IFF Applications TM PACKAGE DIMENSIONS The innovative Semiconductor Company! PACKAGE DIMENSIONS DRAIN GATE SOURCE Note: Drawing isNote: not actual size.is not actual size. Drawing HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property ISO 9001:2000 Certified EG-01-DS09A HVVi Semiconductors, Inc. rights. The HVVi rights, including any patent name and logo are trademarks of HVVi Semiconductors, Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/11/08 10235 S. 51st St. Suite 100 Inc. © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 5 Phoenix, AZ. 85044