VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. PACKAGE STYLE .380 4L FLG B .112 x 45° A E C FEATURES: Ø.125 NOM. FULL R J .125 • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System B E C D E F I GH MAXIMUM RATINGS DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 65 V B .785 / 19.94 C .720 / 18.29 .730 / 18.54 35 V D .970 / 24.64 .980 / 24.89 IC 6.5 A VCBO VCEO 4.0 V PDISS 75W TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.3 °C/W F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .280 / 7.11 I J ORDER CODE: ASI10728 TC = 25 °C NONETEST CONDITIONS SYMBOL .385 / 9.78 E VEBO CHARACTERISTICS MAXIMUM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCE = 28 V PIN = 12 W IC = 500 mA 10 f = 1.0 MHz POUT =50 W f = 175 MHz 6.0 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 mA 150 --- 80 pF dB % REV. C 1/2 VHB50-28F ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA FREQ. 150 MHz POUT = 60 W VCE = 28 V ZIN (Ω) 1.0 + j2.0 ZCL (Ω) 4.0 – j3.69 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2