RoHS NKSD200-100 Series RoHS SEMICONDUCTOR Nell High Power Products Schottky Rectifier, 200A/100V FEATURES 175°C T J operation Center tap module Low forward voltage drop High frequency operation TO-244 (non-insulated) Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free Lug terminal anode 1 Designed and qualified for industrial level TO-244 (insulated) Lug terminal common cathode Lug terminal anode 2 Lug terminal anode 1 DESCRIPTION The NKSD200... Schottky rectifier common cathode module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Base common cathode NKSD400-100 Lug terminal anode 2 NKSD400-100I *Add suffix “I” for insulated type Lug terminal common anode TYPICAL APPLICATIONS Lug terminal cathode1 High current switching power supplies Plating power supplies UPS system Converters Freewheeling Lug terminal cathode2 NKSD400-100RI Welder Reverse battery protection. *Add suffix ”R” for common anode PRODUCT SUMMARY lF(AV) 200A VR 100 V VALUES UNIT 200 A 100 V 12800 A 0.70 V -55 to 175 ºC NKSD200-100 UNIT 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM t p = 5 µs sine VF 100 Apk, T J = 125°C (per leg) TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage www.nellsemi.com SYMBOL VR V RWM Page 1 of 6 RoHS NKSD200-100 Series RoHS SEMICONDUCTOR Nell High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS I F(AV) 50% duty cycle at T C = 142°C, rectangular waveform 100 per leg per device Maximum average forward current VALUES UNIT SYMBOL 200 A Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse V RRM applied 5 µs sine or 3 µs rect. pulse Maximum peak one cycle non-repetitive surge current per leg l FSM Non- repetitive avalanche energy per leg E AS T J =25°C, l AS =13A, L=0.2mH Repetitive avalanche current per leg l AR Current decaying linearly to zero in 1 µs Frequency limited by T J maximum V A =1.5xV R typical SYMBOL TEST CONDITIONS 12800 1700 15 mJ 1 A ELECTRICAL SPECIFICATIONS PARAMETER UNIT VALUES 100A 0.86 T J = 25°C Maximum forward voltage drop per leg 200A 1.03 100A 0.70 V FM (1) V T J = 125°C 200A Maximum reverse leakage current per leg Threshold voltage T J = 25°C l RM (1) V F(TO) Forward slope resistance 0.85 rt 100 μA 20 mA 0.50 V 1.08 mΩ 2650 pF 7.0 nH 10000 V/µs 1000 (1min) V V R = Rated V R T J = 125°C T J = T J maximum Maximum junction capacitance per leg CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Maximum RMS insulation voltage (for insulated type) V INS Rated V R Note: (1) Pulse width < 300 µs, duty cycle < 2% THERMAL-MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNIT -55 - 175 ºC - - 0.38 - - 0.54 - - 0.19 - - 0.27 - 0.10 - TO-244 (non-insulated) - 85 (3) - TO-244 (insulated) - 100 (3.53) - Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) vertical pull - - 80 2" lever pull - - 35 SYMBOL PARAMETER T J ,T Stg Maximum junction and storage temperature range TO-244 (non-insulated) Thermal resistance, junction to case per leg R thJC TO-244 (insulated) Thermal resistance, junction to case per module TO-244 (non-insulated) R thJC TO-244 (insulated) R thCS Thermal resistance, case to heatsink Weight g(oz.) Case style www.nellsemi.com ºC/W JEDEC Page 2 of 6 lbf ∙ in (N∙m) lbf ∙ in TO-244AA compatible RoHS NKSD200-100 Series RoHS SEMICONDUCTOR Nell High Power Products Ordering Information Tabel Device code NK S D 200 1 2 3 4 - 100 R I 5 6 7 1 - Nell's power module 2 - S for Schottky Barrier Diode 3 - D for Dual Diodes, TO-244 Package 4 - Maximum average forward current, A 5 - Voltage rating (100 = 100V) 6 - None for common cathode configuration "R" for common anode configuration 7 - None for non-insulated type " I " for insulated type Fig.2 Typical values of reverse current vs. Reverse voltage (Per Leg) 1000 1000 Reverse curret, l R (mA) lnstantaneous forward current, l F (A) Fig.1 Maximum forward voltage drop characteristics (Per Leg) 100 T J = 17 5ºC T J = 1 25ºC T J = 25ºC 10 100 T J = 17 5ºC T J = 1 50ºC 10 T J = 12 5ºC 1 T J = 100 ºC 0.1 T J = 75 ºC T J = 50 ºC 0.01 T J = 25 ºC 1 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 20 Forward voltage drop, V FM (V) 40 60 80 100 Reverse voltage, V R (V) Thermal lmpedance, R th(j-c) (°C/W) Fig.3-1 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 non-insulated) 1 0.1 D = 0.75 0.01 0.001 0.00001 D = 0.50 D= 0.33 D = 0.25 D =0.20 Single pulse (thermal resistance) 0.0001 0.001 0.01 0.1 Rectangular pulse duration,t 1 (s) www.nellsemi.com Page 3 of 6 1 10 RoHS NKSD200-100 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.3-2 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 insulated) Thermal lmpedance, R th(j-c) (°C/W) 1 0.1 D = 0.75 D = 0.50 D= 0.33 D = 0.25 D =0.20 Single pulse (thermal resistance) 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 10 1 Rectangular pulse duration,t 1 (s) Fig.5 Maximum allowable case temperature vs. Average forward current (Per Leg) Fig.4 Typical junction capacitance vs. Reverse voltage Allowable case temperature (°C) Junction capacitance, C T (pF) 10000 T J = 25ºC 1000 100 0 170 160 DC 150 140 130 Square wave (D = 0.50) 80% rated V r applied 120 110 See note (1) 100 0 10 20 30 40 50 60 70 80 90 100 110 20 40 60 80 100 120 140 160 Average forward current, l F(AV) (A) Fig.6 Forward power loss characteristics (Per Leg) Fig.7 Maximum non-repetitive surge current (Per Leg) D = 0.20 90 D = 0.25 D = 0.33 D = 0.50 D = 0.75 80 70 60 RMS limit 50 40 30 DC 20 10 0 0 25 50 75 100 125 150 Non-Repetitive surge current, l FSM (A) Reverse voltage, V R (V) 100 Average power loss (W) 180 Average forward current, l F(AV) (A) www.nellsemi.com 10 5 10 4 10 3 10 2 10 10 2 10 3 Square wave pulse duration, t p (µs) Page 4 of 6 10 4 RoHS NKSD200-100 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.8 Unclamped lnductive test circuit L High-speed switch IRFP460B D.U.T. R g = 25Ω Freewheel diode Current monitor + V d = 25V 40FD04 Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at(l F(AV) /D)(see fig.6) Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 80% rated V R TO-244 (Non-Insulated) 35.0 2-Φ7.2 3 3 2 1 Φ5.2 80.0 16.8 7.0 15.0 2-1/4" 20 UNC SCREWS 64 21.0 93 All dimensions in millimeters www.nellsemi.com Page 5 of 6 RoHS NKSD300-100 Series RoHS SEMICONDUCTOR Nell High Power Products TO-244 (Insulated) 23.0 23.0 2-Φ7.2 1 3 2 80.0 16.8 7.0 15.0 3-1/4" 20 UNC SCREWS 67 21.0 93 All dimensions in millimeters www.nellsemi.com Page 6 of 6