NKSD200-100 Series

RoHS
NKSD200-100 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Schottky Rectifier, 200A/100V
FEATURES
175°C T J operation
Center tap module
Low forward voltage drop
High frequency operation
TO-244 (non-insulated)
Guard ring for enhanced ruggedness and
long term reliability
Lead (Pb)-free
Lug
terminal
anode 1
Designed and qualified for industrial level
TO-244 (insulated)
Lug terminal
common cathode
Lug
terminal
anode 2
Lug
terminal
anode 1
DESCRIPTION
The NKSD200... Schottky rectifier common
cathode module series has been optimized
for low reverse leakage at high temperature.
The proprietary barrier technology allows for
reliable operation up to 175 °C junction
temperature.
Base
common cathode
NKSD400-100
Lug
terminal
anode 2
NKSD400-100I
*Add suffix “I” for insulated type
Lug terminal
common anode
TYPICAL APPLICATIONS
Lug terminal
cathode1
High current switching power supplies
Plating power supplies
UPS system
Converters
Freewheeling
Lug terminal
cathode2
NKSD400-100RI
Welder
Reverse battery protection.
*Add suffix ”R” for common anode
PRODUCT SUMMARY
lF(AV)
200A
VR
100 V
VALUES
UNIT
200
A
100
V
12800
A
0.70
V
-55 to 175
ºC
NKSD200-100
UNIT
100
V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I F(AV)
CHARACTERISTICS
Rectangular waveform
V RRM
l FSM
t p = 5 µs sine
VF
100 Apk, T J = 125°C (per leg)
TJ
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
www.nellsemi.com
SYMBOL
VR
V RWM
Page 1 of 6
RoHS
NKSD200-100 Series RoHS
SEMICONDUCTOR
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
I F(AV)
50% duty cycle at T C = 142°C, rectangular waveform
100
per leg
per device
Maximum average forward
current
VALUES UNIT
SYMBOL
200
A
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse V RRM applied
5 µs sine or 3 µs rect. pulse
Maximum peak one cycle non-repetitive
surge current per leg
l FSM
Non- repetitive avalanche energy per leg
E AS
T J =25°C, l AS =13A, L=0.2mH
Repetitive avalanche current per leg
l AR
Current decaying linearly to zero in 1 µs
Frequency limited by T J maximum V A =1.5xV R typical
SYMBOL
TEST CONDITIONS
12800
1700
15
mJ
1
A
ELECTRICAL SPECIFICATIONS
PARAMETER
UNIT
VALUES
100A
0.86
T J = 25°C
Maximum forward voltage drop per leg
200A
1.03
100A
0.70
V FM (1)
V
T J = 125°C
200A
Maximum reverse leakage current per leg
Threshold voltage
T J = 25°C
l RM (1)
V F(TO)
Forward slope resistance
0.85
rt
100
μA
20
mA
0.50
V
1.08
mΩ
2650
pF
7.0
nH
10000
V/µs
1000 (1min)
V
V R = Rated V R
T J = 125°C
T J = T J maximum
Maximum junction capacitance per leg
CT
V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C
Typical series inductance per leg
LS
From top of terminal hole to mounting plane
Maximum voltage rate of change
dV/dt
Maximum RMS insulation voltage
(for insulated type)
V INS
Rated V R
Note: (1) Pulse width < 300 µs, duty cycle < 2%
THERMAL-MECHANICAL SPECIFICATIONS
MIN.
TYP.
MAX.
UNIT
-55
-
175
ºC
-
-
0.38
-
-
0.54
-
-
0.19
-
-
0.27
-
0.10
-
TO-244 (non-insulated)
-
85 (3)
-
TO-244 (insulated)
-
100 (3.53)
-
Mounting torque
35.4 (4)
-
53.1 (6)
Mounting torque center hole
30 (3.4)
-
40 (4.6)
Terminal torque
30 (3.4)
-
44.2 (5)
vertical pull
-
-
80
2" lever pull
-
-
35
SYMBOL
PARAMETER
T J ,T Stg
Maximum junction and storage temperature range
TO-244 (non-insulated)
Thermal resistance, junction to case per leg
R thJC
TO-244 (insulated)
Thermal resistance, junction to case
per module
TO-244 (non-insulated)
R thJC
TO-244 (insulated)
R thCS
Thermal resistance, case to heatsink
Weight
g(oz.)
Case style
www.nellsemi.com
ºC/W
JEDEC
Page 2 of 6
lbf ∙ in
(N∙m)
lbf ∙ in
TO-244AA compatible
RoHS
NKSD200-100 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Ordering Information Tabel
Device code
NK
S
D
200
1
2
3
4
-
100
R
I
5
6
7
1 - Nell's power module
2 - S for Schottky Barrier Diode
3 - D for Dual Diodes, TO-244 Package
4 - Maximum average forward current, A
5 - Voltage rating (100 = 100V)
6 - None for common cathode configuration
"R" for common anode configuration
7 - None for non-insulated type
" I " for insulated type
Fig.2 Typical values of reverse current vs.
Reverse voltage (Per Leg)
1000
1000
Reverse curret, l R (mA)
lnstantaneous forward current, l F (A)
Fig.1 Maximum forward voltage drop
characteristics (Per Leg)
100
T J = 17 5ºC
T J = 1 25ºC
T J = 25ºC
10
100
T J = 17 5ºC
T J = 1 50ºC
10
T J = 12 5ºC
1
T J = 100 ºC
0.1
T J = 75 ºC
T J = 50 ºC
0.01
T J = 25 ºC
1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
20
Forward voltage drop, V FM (V)
40
60
80
100
Reverse voltage, V R (V)
Thermal lmpedance, R th(j-c) (°C/W)
Fig.3-1 Maximum thermal impedance R th(j-c) characteristics
(Per Leg, for TO-244 non-insulated)
1
0.1
D = 0.75
0.01
0.001
0.00001
D = 0.50
D= 0.33
D = 0.25
D =0.20
Single pulse
(thermal resistance)
0.0001
0.001
0.01
0.1
Rectangular pulse duration,t 1 (s)
www.nellsemi.com
Page 3 of 6
1
10
RoHS
NKSD200-100 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.3-2 Maximum thermal impedance R th(j-c) characteristics
(Per Leg, for TO-244 insulated)
Thermal lmpedance, R th(j-c) (°C/W)
1
0.1
D = 0.75
D = 0.50
D= 0.33
D = 0.25
D =0.20
Single pulse
(thermal resistance)
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
10
1
Rectangular pulse duration,t 1 (s)
Fig.5 Maximum allowable case temperature
vs. Average forward current (Per Leg)
Fig.4 Typical junction capacitance vs.
Reverse voltage
Allowable case temperature (°C)
Junction capacitance, C T (pF)
10000
T J = 25ºC
1000
100
0
170
160
DC
150
140
130
Square wave (D = 0.50)
80% rated V r applied
120
110
See note (1)
100
0
10 20 30 40 50 60 70 80 90 100 110
20
40
60
80
100 120 140
160
Average forward current, l F(AV) (A)
Fig.6 Forward power loss characteristics
(Per Leg)
Fig.7 Maximum non-repetitive surge current
(Per Leg)
D = 0.20
90
D = 0.25
D = 0.33
D = 0.50
D = 0.75
80
70
60
RMS limit
50
40
30
DC
20
10
0
0
25
50
75
100
125
150
Non-Repetitive surge current, l FSM (A)
Reverse voltage, V R (V)
100
Average power loss (W)
180
Average forward current, l F(AV) (A)
www.nellsemi.com
10 5
10 4
10 3
10 2
10
10 2
10 3
Square wave pulse duration, t p (µs)
Page 4 of 6
10 4
RoHS
NKSD200-100 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.8 Unclamped lnductive test circuit
L
High-speed
switch
IRFP460B
D.U.T.
R g = 25Ω
Freewheel
diode
Current
monitor
+ V d = 25V
40FD04
Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at(l F(AV) /D)(see fig.6)
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 80% rated V R
TO-244 (Non-Insulated)
35.0
2-Φ7.2
3
3
2
1
Φ5.2
80.0
16.8
7.0
15.0
2-1/4" 20 UNC SCREWS
64
21.0
93
All dimensions in millimeters
www.nellsemi.com
Page 5 of 6
RoHS
NKSD300-100 Series RoHS
SEMICONDUCTOR
Nell High Power Products
TO-244 (Insulated)
23.0
23.0
2-Φ7.2
1
3
2
80.0
16.8
7.0
15.0
3-1/4" 20 UNC SCREWS
67
21.0
93
All dimensions in millimeters
www.nellsemi.com
Page 6 of 6