RoHS RoHS NKS200-150 Series SEMICONDUCTOR Nell High Power Products High Performance Schottky Rectifier 200A/150V FEATURES 175°C T J operation Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free Designed and qualified for industrial level D-67 (Half-Pak) DESCRIPTION The NKS200-150 Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Lug terminal anode TYPICAL APPLICATIONS Base cathode High current switching power supplies Plating power supplies UPS system Converters Freewheeling diode Welder Reverse battery protection. PRODUCT SUMMARY lF(AV) 200A VR 150V VALUES UNIT 200 A 150 V 22000 A 0.75 V -55 to 175 ºC NKS200-150 UNIT 150 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM t p = 5 µs sine VF 200 Apk, T J = 125°C TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage www.nellsemi.com SYMBOL VR V RWM Page 1 of 5 NKS200-150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ABSOLUTE MAXIMUM RATINGS VALUES UNIT SYMBOL TEST CONDITIONS Maximum average forward current I F(AV) 50% duty cycle at T C = 120°C, rectangular waveform Maximum peak one cycle non-repetitive surge current l FSM Non- repetitive avalanche energy E AS T J =25°C, l AS =5.5A, L=1.0mH l AR Current decaying linearly to zero in 1 µs Frequency limited by T J maximum V A =1.5xV R typical SYMBOL TEST CONDITIONS PARAMETER Repetitive avalanche current Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse V RRM applied 5 µs sine or 3 µs rect. pulse 200 22000 A 2500 15 mJ 1 A ELECTRICAL SPECIFICATIONS PARAMETER VALUES UNIT 200A 0.92 T J = 25°C Maximum forward voltage drop per leg 400A 1.25 200A 0.75 V FM (1) V T J = 125°C 400A 0.95 T J = 25°C Maximum reverse leakage current per leg 30 μA 30 mA 4540 pF 6.0 nH 10000 V/µs V R = Rated V R l RM (1) T J = 125°C Maximum junction capacitance per leg CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated V R Note (1) Pulse width < 500 µs, duty cycle < 2% THERMAL-MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNIT T J ,T Stg -55 - 175 ºC Thermal resistance, junction to case R thJC - - 0.28 Thermal resistance, case to heatsink R thCS - 0.05 - - 30 (1.06) - Mounting torque 3 ( 26.5) - 4 (35.4) Terminal torque 3.4 (30) - 5 (44.2) PARAMETER Maximum junction and storage temperature range SYMBOL ºC/W Weight g(oz.) N ∙ m (lbf ∙ in) Case style www.nellsemi.com JEDEC D-67 Half-Pak module Page 2 of 5 NKS200-150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Ordering Information Tabel Device code NK S 200 1 2 3 - 150 4 1 - Nell's power module 2 - S for Schottky Barrier Diode, single diode, D-67 package (Half-Pack) 3 - Maximum average forward current, 200 = 200A 4 - Voltage rating (150 = 150V) Fig.2 Typical values of reverse current vs. reverse voltage 1000 1000 T J = 17 5ºC 100 Reverse curret, l R (mA) lnstantaneous forward current, l F (A) Fig.1 Maximum forward voltage drop characteristics 100 T J = 12 5ºC T J = 2 5ºC 10 T J = 1 25ºC 10 1 0.1 T J = 25 ºC 0.01 1 0.0 1.0 0.5 1.5 2.0 0.001 0 2.5 30 Forward voltage drop, V FM (V) 60 90 120 Reverse voltage, V R (V) Fig.3 Maximum thermal impedance R th(j-c) characteristics Thermal lmpedance, R th(j-c) (°C/W) 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.01 0.001 10 -5 10 -4 10 -3 10 -2 10 -1 Rectangular pulse duration,t 1 (s) www.nellsemi.com Page 3 of 5 1 10 150 NKS200-150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Maximum allowable case temperature vs. Average forward current Fig.4 Typical junction capacitance vs. reverse voltage 180 Allowable case temperature (°C) Junction capacitance, C T (pF) 10000 T J = 25ºC 1000 170 160 140 130 Square wave (D = 0.50) 80% rated V r applied 120 110 See note (1) 100 100 0 0 10 20 30 40 50 60 70 80 90 100 110 40 80 120 160 200 240 280 Reverse voltage, V R (V) Average forward current, l F(AV) (A) Fig.6 Forward power loss characteristics Fig.7 Maximum non-repetitive surge current 200 150 30° 60° 90° 120° 125 180° Non-Repetitive surge current, l FSM (A) 250 Average power loss (W) DC 150 RMS limit 100 DC 75 50 25 100000 0 0 50 100 150 200 250 10000 1000 100 10 300 Average forward current, l F(AV) (A) 100 Square wave pulse duration, t p (µs) Fig.8 Unclamped lnductive test circuit L IRF460B High-speed switch D.U.T. R g = 25Ω Current monitor Freewheel diode 40HFL40S02 (40FD04A) + V d = 25V Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6) Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = rated V R www.nellsemi.com 1000 Page 4 of 5 10000 SEMICONDUCTOR NKS200-150 Series RoHS RoHS Nell High Power Products D-67 (Half-Pak) All dimensions in millimeters www.nellsemi.com Page 5 of 5