RoHS NKSD400-100 Series RoHS SEMICONDUCTOR Nell High Power Products Schottky Rectifier, 400 A FEATURES 175°C T J operation Center tap module Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead (Pb)-free TO-244 (non-insulated) TO-244 (insulated) Designed and qualified for industrial level Lug terminal anode 1 DESCRIPTION Lug terminal anode 2 Lug terminal common cathode Lug terminal anode 1 The NKSD400... Schottky rectifier common cathode module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Lug terminal anode 2 Base common cathode TYPICAL APPLICATIONS High current switching power supplies Plating power supplies UPS system *Add suffix R for common anode Converters Freewheeling Welder Reverse battery protection. PRODUCT SUMMARY lF(AV) 400A VR 100 V VALUES UNIT 400 A 100 V 25500 A 0.69 V -55 to 175 ºC NKSD400-100 UNIT 100 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Rectangular waveform V RRM l FSM t p = 5 µs sine VF 200 Apk, T j = 125°C (per leg) TJ Range VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage www.nellsemi.com SYMBOL VR V RWM Page 1 of 6 RoHS NKSD400-100 Series RoHS SEMICONDUCTOR Nell High Power Products ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig.5 VALUES UNIT SYMBOL TEST CONDITIONS I F(AV) 50% duty cycle at T C = 141°C, rectangular waveform 200 per leg per device 400 Maximum peak one cycle non-repetitive surge current per leg See fig.7 l FSM Non- repetitive avalanche energy per leg E AS T J =25°C, l AS =13A, L=0.2mH Repetitive avalanche current per leg l AR Current decaying linearly to zero in 1 µs Frequency limited by T J maximum V A =1.5xV R typical SYMBOL TEST CONDITIONS A Following any rated load condition and with rated 10 ms sine or 6 ms rect. pulse V RRM applied 5 µs sine or 3 µs rect. pulse 25500 3300 15 mJ 1 A ELECTRICAL SPECIFICATIONS PARAMETER UNIT VALUES 200A 0.84 T J = 25°C Maximum forward voltage drop per leg See fig.1 400A 1.07 200A 0.69 V FM (1) V T J = 125°C 400A Maximum reverse leakage current per leg See fig.2 0.82 T J = 25°C 6 V R = Rated V R l RM (1) mA T J = 125°C 80 Maximum junction capacitance per leg CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance per leg LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated V R Maximum RMS insulation voltage (for insulated type) V INS 50 Hz 5500 pF 5 nH 10000 V/µs 3000 (1min) V 3600 (1s) Note (1) Pulse width < 300 µs, duty cycle < 2% THERMAL-MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNIT -55 - 175 ºC - - 0.19 - - 0.26 - - 0.095 - - 0.13 - 0.1 - TO-244 (non-insulated) - 85 (3) - TO-244 (insulated) - 100 (3.53) - Mounting torque 35.4 (4) - 53.1 (6) Mounting torque center hole 30 (3.4) - 40 (4.6) Terminal torque 30 (3.4) - 44.2 (5) vertical pull - - 80 2" lever pull - - 35 SYMBOL PARAMETER T J ,T Stg Maximum junction and storage temperature range TO-244 (non-insulated) Thermal resistance, junction to case per leg R thJC TO-244 (insulated) Thermal resistance, junction to case per module TO-244 (non-insulated) R thCS TO-244 (insulated) Thermal resistance, case to heatsink Weight g(oz.) Case style www.nellsemi.com ºC/W JEDEC Page 2 of 6 lbf ∙ in (N∙m) lbf ∙ in TO-244AA compatible RoHS NKSD400-100 Series RoHS SEMICONDUCTOR Nell High Power Products Device code NK S D 400 1 2 3 4 - 100 R I 5 6 7 1 - Nell's power module 2 - S for Schottky Barrier Diode 3 - D for Dual Diodes, TO-244 Package 4 - Maximum average forward current, A 5 - Voltage rating (100 = 100V) 6 - None for common cathode configuration "R" for common anode configuration 7 - None for non-insulated type " I " for insulated type Fig.2 Typical values of reverse current vs. Reverse voltage (Per Leg) 1000 1000 T J = 17 5ºC T J = 17 5ºC 100 100 Reverse curret, l R (mA) lnstantaneous forward current, l F (A) Fig.1 Maximum forward voltage drop characteristics (Per Leg) T J = 1 25ºC T J = 25ºC 10 T J = 1 50ºC T J = 125 ºC 10 T J = 100 ºC 1 T J = 7 5ºC T J = 50ºC 0.1 T J = 2 5ºC 0.01 1 0.001 0 0.3 0.6 0.9 1.2 1.5 1.8 0 20 Forward voltage drop, V FM (V) 40 60 80 100 Reverse voltage, V R (V) Fig.3-1 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 non-insulated) Thermal lmpedance, R th(j-c) 1 0.1 D = 0.75 0.01 D = 0.50 D= 0.33 Single pulse (thermal resistance) D = 0.25 D =0.20 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular pulse duration,t 1 (s) www.nellsemi.com Page 3 of 6 1 10 RoHS NKSD400-100 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.3-2 Maximum thermal impedance R th(j-c) characteristics (Per Leg, for TO-244 insulated) Thermal lmpedance, R th(j-c) 1 D = 0.75 D = 0.5 D= 0.33 D = 0.25 0.1 D =0.2 Single pulse (thermal resistance) 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 10 1 Rectangular pulse duration,t 1 (s) Fig.5 Maximum allowable case temperature vs. Average forward current (Per Leg) Fig.4 Typical junction capacitance vs. Reverse voltage (Per Leg ) 180 Allowable case temperature (°C) Junction capacitance, C T (pF) 10000 T J = 25ºC 1000 140 DC Square wave (D = 0.50) 80% rated V r applied 120 100 See note (1) 80 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 Average forward current, l F(AV) (A) Fig.6 Forward power loss characteristics (Per Leg) Fig.7 Maximum non-repetitive surge current (Per Leg) 150 D=0.08 D=0.17 D=0.25 D=0.33 D=0.50 100 RMS limit DC 50 0 0 50 100 150 200 250 300 Non-Repetitive surge current, l FSM (A) Reverse voltage, V R (V) 200 Average power loss (W) 160 Average forward current, l F(AV) (A) www.nellsemi.com 10 5 At any rated load condition and with rated V RRM applied following surge 10 4 10 3 10 10 2 10 3 Square wave pulse duration, t p (µs) Page 4 of 6 10 4 RoHS NKSD400-100 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.8 Unclamped lnductive test circuit L High-speed switch IRFP460 D.U.T. R g = 25Ω Freewheel diode + V d = 25V Current monitor Note (1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ; Pd = Forward power loss = l F(AV) x V FM at(l F(AV) /D)(see fig.6) Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = 80% rated V R TO-244 (Non-Insulated) 35.0 2-Φ7.2 3 3 2 1 Φ5.2 80.0 16.8 7.0 15.0 2-1/4" 20 UNC SCREWS 64 21.0 93 All dimensions in millimeters www.nellsemi.com Page 5 of 6 RoHS NKSD400-100 Series RoHS SEMICONDUCTOR Nell High Power Products TO-244 (Insulated) 23.0 23.0 2-Φ7.2 1 3 2 80.0 16.8 7.0 15.0 3-1/4" 20 UNC SCREWS 67 21.0 93 All dimensions in millimeters www.nellsemi.com Page 6 of 6