NKS200-100 Series

RoHS
RoHS
NKS200-100 Series
SEMICONDUCTOR
Nell High Power Products
High Performance Schottky Rectifier
200A/100V
FEATURES
175°C T J operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and
long term reliability
Lead (Pb)-free
Designed and qualified for industrial level
D-67 (Half-Pak)
DESCRIPTION
The NKS200-100 Schottky rectifier module
series has been optimized for low reverse
leakage at high temperature.
The proprietary barrier technology allows
for reliable operation up to 175 °C junction
temperature.
Lug terminal
anode
TYPICAL APPLICATIONS
Base cathode
High current switching power supplies
Plating power supplies
UPS system
Converters
Freewheeling diode
Welder
Reverse battery protection.
PRODUCT SUMMARY
lF(AV)
200A
VR
100V
VALUES
UNIT
200
A
100
V
23000
A
0.75
V
-55 to 175
ºC
NKS200-100
UNIT
100
V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I F(AV)
CHARACTERISTICS
Rectangular waveform
V RRM
l FSM
t p = 5 µs sine
VF
200 Apk, T J = 125°C
TJ
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
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SYMBOL
VR
V RWM
Page 1 of 5
NKS200-100 Series
SEMICONDUCTOR
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Nell High Power Products
ABSOLUTE MAXIMUM RATINGS
VALUES UNIT
SYMBOL
TEST CONDITIONS
Maximum average forward current
I F(AV)
50% duty cycle at T C = 125°C, rectangular waveform
Maximum peak one cycle non-repetitive
surge current
l FSM
Non- repetitive avalanche energy
E AS
T J =25°C, l AS =5.5A, L=1.0mH
l AR
Current decaying linearly to zero in 1 µs
Frequency limited by T J maximum V A =1.5xV R typical
SYMBOL
TEST CONDITIONS
PARAMETER
Repetitive avalanche current
200
Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse V RRM applied
5 µs sine or 3 µs rect. pulse
23000
A
2600
15
mJ
1
A
ELECTRICAL SPECIFICATIONS
PARAMETER
VALUES
200A
UNIT
0.90
T J = 25°C
Maximum forward voltage drop per leg
400A
1.25
200A
0.75
V FM (1)
V
T J = 125°C
400A
0.90
T J = 25°C
Maximum reverse leakage current per leg
30
μA
30
mA
4150
pF
6.0
nH
10000
V/µs
V R = Rated V R
l RM (1)
T J = 125°C
Maximum junction capacitance per leg
CT
V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C
Typical series inductance per leg
LS
From top of terminal hole to mounting plane
Maximum voltage rate of change
dV/dt
Rated V R
Note
(1) Pulse width < 500 µs, duty cycle < 2%
THERMAL-MECHANICAL SPECIFICATIONS
MIN.
TYP.
MAX.
UNIT
T J ,T Stg
-55
-
175
ºC
Thermal resistance, junction to case
R thJC
-
-
0.28
Thermal resistance, case to heatsink
R thCS
-
0.05
-
-
30 (1.06)
-
Mounting torque
3 ( 26.5)
-
4 (35.4)
Terminal torque
3.4 (30)
-
5 (44.2)
PARAMETER
Maximum junction and storage temperature range
SYMBOL
ºC/W
Weight
g(oz.)
N ∙ m (lbf ∙ in)
Case style
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JEDEC D-67 Half-Pak module
Page 2 of 5
NKS200-100 Series
SEMICONDUCTOR
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Nell High Power Products
Ordering Information Tabel
Device code
NK
S
200
1
2
3
-
100
4
1 - Nell's power module
2 - S for Schottky Barrier Diode, single diode,
D-67 package (Half-Pack)
3 - Maximum average forward current, 200 = 200A
4 - Voltage rating (100 = 100V)
Fig.2 Typical values of reverse current vs.
reverse voltage
1000
1000
T J = 17 5ºC
100
Reverse curret, l R (mA)
lnstantaneous forward current, l F (A)
Fig.1 Maximum forward voltage drop
characteristics
100
T J = 17 5ºC
T J = 12 5ºC
T J = 2 5ºC
10
T J = 1 25ºC
10
1
0.1
T J = 25 ºC
0.01
1
0.0
1.0
0.5
1.5
2.0
0.001
0
2.5
20
Forward voltage drop, V FM (V)
30
40
50
60
70
80
Reverse voltage, V R (V)
Fig.3 Maximum thermal impedance R th(j-c) characteristics
Thermal lmpedance, R th(j-c) (°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.01
0.001
10 -5
10 -4
10 -3
10 -2
10 -1
Rectangular pulse duration,t 1 (s)
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Page 3 of 5
1
10
90
100
NKS200-100 Series
SEMICONDUCTOR
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Nell High Power Products
Fig.5 Maximum allowable case temperature
vs. Average forward current
Fig.4 Typical junction capacitance vs.
reverse voltage
180
Allowable case temperature (°C)
Junction capacitance, C T (pF)
10000
T J = 25ºC
1000
170
160
140
130
Square wave (D = 0.50)
80% rated V r applied
120
110
See note (1)
100
100
0
0
10 20 30 40 50 60 70 80 90 100 110
40
80
120
160
200
240
280
Reverse voltage, V R (V)
Average forward current, l F(AV) (A)
Fig.6 Forward power loss characteristics
Fig.7 Maximum non-repetitive surge current
200
150
30°
60°
90°
120°
125
180°
Non-Repetitive surge current, l FSM (A)
250
Average power loss (W)
DC
150
RMS limit
100
DC
75
50
25
100000
0
0
50
100
150
200
250
10000
1000
100
10
300
Average forward current, l F(AV) (A)
100
Square wave pulse duration, t p (µs)
Fig.8 Unclamped lnductive test circuit
L
IRF460B
High-speed
switch
D.U.T.
R g = 25Ω
Current
monitor
Freewheel
diode
40HFL40S02
(40FD04A)
+ V d = 25V
Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6)
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = rated V R
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1000
Page 4 of 5
10000
SEMICONDUCTOR
NKS200-100 Series
RoHS
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Nell High Power Products
D-67 (Half-Pak)
All dimensions in millimeters
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Page 5 of 5