RoHS MBR1545CT / MBR1560CT Series RoHS SEMICONDUCTOR Nell Semiconductors Dual Common Cathode Schottky Rectifier, Available 15A (7.5A x 2) RoHS* COMPLIANT FEATURES 150°C T J operation High frequency operation CASE PIN 2 Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 275°C maximum, 10 s per JESD 22B-106 (for TO-220AB and ITO-220AB package) 1 PIN 1 2 PIN 3 3 TO-220AB (MBR15xxCT) PIN 2 DESCRIPTION 1 The MBR15xxCT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. PIN 1 2 PIN 3 3 ITO-220AB (MBRF15xxCT) APPLICATIONS HEATSINK K K Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. 1 PIN 1 2 MECHANICAL DATA PIN 2 TO-263AB (MBRH15xxCT) Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum PRODUCT SUMMARY l F(AV) 7.5A x 2 VR 45V/60V V F at l F 0.57V, 0.65V l RM max . 15~50mA at 125°C T J max. 150°C Diode variation Dual dice E AS 7 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL l F(AV) CHARACTERISTICS MBR1560CT 7.5 x 2 45 t p = 5 μs sine VF 7.5 A pk , T J = 125°C TJ Range www.nellsemi.com MBR1545CT Rectangular waveform V RRM l FSM VALUE A 60 690 -65 to 150 Page 1of 6 V A 0.65 0.57 UNIT V °C RoHS MBR1545CT / MBR1560CT Series RoHS SEMICONDUCTOR Nell Semiconductors VOLTAGE RATINGS SYMBOL PARAMETER Maximum DC reverse voltage MBR1545CT MBR1560CT UNIT 45 60 V VR Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per device per diode Non-repetitive peak surge current VALUE TEST CONDITIONS UNIT 15 l F(AV) T C = 105°C, rated V R A 7.5 l FSM Following any rated load 5 μs sine or 3 μs rect.pulse condition and with rated V RRM applied 690 Surge applied at rated load condition half wave single phase 60 Hz 150 A Non-repetitive avalanche energy E AS T J = 25°C, l AS = 2.0A, L = 3.5mH 7 mJ Repetitive avalanche current l AR Current decaying linearly to zero in 1 μs Frequency limited by T J maximum V A = 1.5 x V R typical 2 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS I F = 7.5A I F = 15A Maximum forward voltage drop VALUE MBR1545CT MBR1560CT 0.68 0.75 0.84 0.90 0.57 0.65 0.72 0.80 0.1 1 15 50 300 250 UNIT T J = 25°C V FM (1) V I F = 7.5A T J = 125°C I F = 15A Maximum instantaneous reverse current l RM (1) T J = 25°C Rated DC voltage T J = 125°C Maximum junction capacitance CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance LS Measured from top of terminal to mounting plane Maximum voltage rate of change dV/dt Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min V ISO Rated V R Note (1) Pulse width < 300 µs, duty cycle < 2% www.nellsemi.com Page 2 of 6 mA pF 8 nH 1000 V/µs 1500 V SEMICONDUCTOR RoHS MBR1545CT / MBR1560CT Series RoHS Nell Semiconductors THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER VALUE TEST CONDITIONS MBR MBRF Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range T stg -65 to 175 UNIT MBRH °C Maximum thermal resistance, junction to case R thJC DC operation R thCS Mounting surface, smooth and greased 3 5 3 °C/W Typical thermal resistance, case to heatsink 0.5 0.8 0.5 2 2 1.4 g 0.07 0.07 0.05 oz. Approximate weight Mounting torque minimum 6 (5) maximum 12 (10) Ordering Information Table Device code www.nellsemi.com MBR F 15 45 CT 1 2 3 4 5 1 - Schottky MBR series 2 - Package outline "none" for TO-220AB "F" for ITO-220AB (TO-220F) "H" for TO-263AB (D 2 PAK) 3 - Current rating (15 = 15A, 7.5A x 2) 4 - Voltage ratings, 45 =45V, 60=60V 5 - Circuit configuration, Center tap common cathode, TO-220 series package Page 3 of 6 kgf . cm (lbf . in) RoHS MBR1545CT / MBR1560CT Series RoHS SEMICONDUCTOR Nell Semiconductors BATINGS AND CHARACTERISTICS CURVES (T A = 25°C unless otherwise noted) Fig.1 Forward current derating curve Fig.2 Maximum non-repetitive peak forward surge current per diode 175 Resistive or lnductive load 20 15 10 5 Peak forward surge current (A) Average forward current(A) 25 0 50 100 100 75 50 150 10 1 100 Number of cycles at 60 Hz Fig.3 Typical instantaneous forward characteristics per diode Fig.4 Typical reverse characteristics per diode 100 10 Pulse Width = 300 µs 1% Duty Cycle T J = 125°C T J = 25°C 1 0.1 MBR1545CT MBR1560CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 lnstantaneous reverse current (mA) Case temperature(°C) 100 MBR1545CT MBR1560CT 10 T J = 125°C 1 0.1 T J = 75°C 0.01 T J = 25°C 0.001 0 20 40 60 80 100 lnstantaneous forward voltage (V) Percent of rated peak reverse voltage (%) Fig.5 Typical junction capacitance per diode Fig.6 Typical transient thermal lmpedance per diode 10000 T J = 25°C f = 1.0 MHZ V sig = 50 mVp-p 1000 100 MBR1545CT MBR1560CT 10 0.1 1 10 100 Transient thermal impedance (°C/W) lnstantaneous forward current (mA) 125 25 0 Junction capacitance (pf) T J = T J Max. 8.3 ms Single Half Sine-wave 150 Reverse voltage (V) www.nellsemi.com 100 10 1 0.1 0.01 0.1 1 10 Pulse duration, t (s) Page 4of 6 100 SEMICONDUCTOR RoHS MBR1545CT / MBR1560CT Series RoHS Nell Semiconductors TO-220AB(MBR15xxCT) 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 0.90 (0.035) 0.70 (0.028) 2.65 (0.104) 2.45 (0.096) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) CASE PIN 2 All dimensions in millimeters (inches) PIN 1 PIN 3 TO-263AB(MBRH15xxCT) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 1.40 (0.055) 1.14 (0.045) 6.22 (0.245) 1.40 (0.055) 1.19 (0.047) 9.14 (0.360) 8.13 (0.320) 2 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) 2.79 (0.110) HEATSINK K All dimensions in millimeters (inches) www.nellsemi.com Page 5of 6 PIN 1 PIN 2 RoHS MBR1545CT / MBR1560CT Series RoHS SEMICONDUCTOR Nell Semiconductors ITO-220AB(MBRF15xxCT) 10.6 10.4 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 PIN 2 4.8 4.6 All dimensions in millimeters www.nellsemi.com Page 6 of 6 PIN 1 PIN 3