GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products Glass Passivated Single-Phase Bridge Rectifier, 15A GBPC1506 Thru GBPC1512 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting Typical IR less than 1.0 µA GBPC-W GBPC ~ High surge current capability + Low thermal resistance Solder dip 260°C, 40s - ~ Compliant to RoHS + ~ Glass passivated chips TYPICAL APPLICATIONS - General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, ~ office equipment, industrial automation applications. MECHANICAL DATA Case: GBPC, GBPC-W Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads(e.g. GBPC1506W). Polarity: As marked,positive lead by belevled corner Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 14g (0.49 ozs) - ~ ~ + GBPC GBPC-W 28.6 28.6 18.1 18.1 18.1 Ø5.3 28.6 11.4 28.6 14.3 16.6 12.2 Ø5.3 16.6 1.0(x4) 0.8 6.35 Ø2.4 32~34 20 7.7 All dimensions in millimeters www.nellsemi.com Page 1 of 4 7.7 GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 15A V RRM 600V to 1200V I FSM 300A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) GBPC15 PARAMETER UNIT SYMBOL 06 08 10 12 Maximum repetitive peak reverse voltage V RRM 600 800 1000 1200 V Maximum RMS voltage V RMS 420 560 700 840 V Maximum DC blocking voltage V DC 600 800 1000 1200 V Maximum average forward rectified output current @ Tc = 85°C (Fig.1) I F(AV) 15 A Peak forward surge current single sine-wave superimposed on rated load I FSM 300 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 375 A 2s RMS isolation voltage from case to leads V ISO 2500 V T J ,T STG -55 to 150 ºC Operating junction storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Maximum instantaneous forward drop per diode Maximum reverse DC current at rated DC blocking GBPC15 TEST CONDITIONS SYMBOL I F = 7.5A VF T A = 25°C voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz 06 08 10 12 1.1 V 5 IR UNIT µA 500 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) GBPC15 PARAMETER SYMBOL Typical thermal resistance R θJC (1) 06 08 10 1.4 UNIT 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 4 GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum output rectified current Fig.2 Maximum output rectified current 40 Bridges mounted on 5x4x3” AL. Finned Plate Average forward current (A) Average forward current (A) 15 10 5 60 H z Resistive or lnductive Load 0 20 40 60 80 100 120 140 25 20 R thS-A = 0.5°C/W 15 10 5 60 H z Resistive or lnductive Load 0 10 20 30 40 50 60 70 80 90 100 Case temperature(°C) Ambient temperature(°C) Fig.3 Maximum power dissipation Fig.4 Maximum non-repetitive peak forward surge current per diode 80 1000 70 Capacitive Load 60 50 T J = T J max. 40 Resistive or lnductive Load 30 20 10 0 30 0 160 Peak forward surge current (A) Average power dissipation of bridge (W) 0 35 0 10 20 30 100 1.0 Cycle 10 40 1 Average output current (A) www.nellsemi.com T J = T J max. 0.5 Single Sine-Wave 10 Number of cycles at 60 Hz Page 3 of 4 100 GBPC15 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.6 Typical reverse leakage characteristics per leg 100 lnstantaneous reverse leakage (μA) lnstantaneous forward current (A) Fig.5 Maximum instantaneous forward characteristics per leg 10 1 0.1 T J = 25°C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 T A = 150°C T A = 125°C 100 T A = 100°C 10 1 T A = 25°C 0.1 0 1.6 10 20 30 40 50 60 70 80 90 100 Instantaneous forward voltage (%) Fig.7 Typical junction characteristics per leg Fig.6 Typical reverse leakage characteristics per leg Transient thermal lmpedance (°C/W) Instantaneous forward voltage (V) 1,000 Junction capacitance (pF) 1000 T J = 25°C f = 1.0 MH V sing = 50MVp-p 100 10 1 10 100 Reverse voltage (V) www.nellsemi.com 1,000 25°C °C TT J = 25 100 10 1 0.01 0.1 1 10 Heating time, t (sec.) Page 4 of 4 100