Hardware
Documentation
D at a S h e e t
HAC 83x
Robust Multi-Purpose Programmable
Linear Hall-Effect Sensor Family
with Integrated Caps
Edition May 22, 2015
DSH000168_001EN
HAC 83x
DATA SHEET
Copyright, Warranty, and Limitation of Liability
Micronas Patents
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
EP0 953 848, EP 1 039 357, EP 1 575 013
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
military, aviation, or aerospace applications! Unless
explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
2
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
Contents
Page
Section
Title
4
4
5
5
1.
1.1.
1.2.
1.3.
Introduction
General Features
Device-Specific Features of HAC835
Applications
6
6
2.
2.1.
Ordering Information
Device-Specific Ordering Codes
7
7
9
13
13
3.
3.1.
3.2.
3.3.
3.3.1.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
15
15
17
17
17
17
17
18
19
19
20
23
24
25
25
25
26
26
26
4.
4.1.
4.2.
4.3.
4.4.
4.4.1.
4.4.2.
4.5.
4.5.1.
4.6.
4.7.
4.7.1.
4.7.2.
4.8.
4.8.1.
4.8.2.
4.8.3.
4.8.4.
4.8.5.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
Pin Connections and Short Descriptions
Sensitive Area
Dimension
Position
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Definition of Sensitivity Error ES
Power-On Operation
Diagnostics and Safety Features
Overvoltage and Undervoltage Detection
Open-Circuit Detection
Overtemperature and Short-Circuit Protection
EEPROM Redundancy
ADC Diagnostic
27
27
27
28
29
29
5.
5.1.
5.2.
5.3.
5.4.
5.5.
Application Notes
Application Circuit
Use of two HAC83x in Parallel
Temperature Compensation
Ambient Temperature
EMC and ESD
30
30
30
32
33
33
36
6.
6.1.
6.2.
6.3.
6.4.
6.5.
6.6.
Programming
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
37
7.
Data Sheet History
Micronas
May 22, 2015; DSH000168_001E
3
HAC 83x
DATA SHEET
Robust Multi-Purpose Programmable Linear HallEffect Sensor Family with Integrated Caps
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
HAC83x is a new Micronas family of programmable linear Hall sensors. It offers optimal Electromagnetic
Compatibility (EMC) protection as it integrates the
HAL83x robust multipurpose device as well as decoupling capacitors within a single 3-pin package. This
family consists of two members: the HAC830 and the
HAC835, equipped with different sets of capacitors.
The HAC835 corresponds to the HAL835, a device
with full feature set and maximum performance,
whereas the HAC830 is based on the HAL830.
In addition, the temperature compensation of the
Hall IC can be fit to common magnetic materials by
programming first- and second-order temperature
coefficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with high
accuracy.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
The sensor is designed for hostile industrial and
automotive applications and is AECQ100 qualified.
It operates with typically 5 V supply voltage in the
ambient temperature range from 40 °C up to
150 °C. It is available in the very small 3-pin package
TO92UP-2.
With their integrated capacitors, the HAC83x meets
the stringent ESD and EMC requirements and eliminates the need for a PCB, thus reducing the total system size and cost.
1.1. General Features
The HAC83x comprises universal magnetic field sensors based on the Hall effect featuring a linear output.
The IC can be used for angle or distance measurements when combined with a rotating or moving magnet. There is no need either to add a load capacitor
between ground and the analog output or any blocking
capacitor to suppress noise on the supply line of the
device.
– Multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
The major characteristics like magnetic field range,
sensitivity, output quiescent voltage (output voltage at
B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensors have a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the
supply voltage.
– Operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
The HAC83x features a temperature-compensated
Hall plate with spinning-current offset compensation,
an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with
redundancy and lock function for the calibration data,
an EEPROM for customer serial number, a serial interface for programming the EEPROM, protection devices
at all pins and decoupling capacitors.
– Open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down resistor, overvoltage and undervoltage detection
The HAC83x is programmable by modulating the supply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly. It is possible to program several devices connected to the same supply
and ground line.
4
– High-precision linear Hall-effect sensor family with
12 bit ratiometric analog or PWM output and digital
signal processing
– Integrated capacitors for improved Electromagnetic
Compatibility (EMC) and PCB-less applications
– Operates from 40 °C up to 150 °C ambient temperature
– Operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– Programmable magnetic field range from 30 mT up
to 150 mT (HAC 830) or from 15 mT up to
150 mT (HAC 835)
– For programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be done via the output pin
– Temperature characteristics are programmable for
matching common magnetic materials
– Programmable clamping function
– Programming via modulation of the supply voltage
– Overvoltage- and reverse-voltage protection at all pins
– Magnetic characteristics extremely robust against
mechanical stress
– Short-circuit protected push-pull output
– EMC and ESD optimized design
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
1.2. Device-Specific Features of HAC835
– Very low offset and sensitivity drift over temperature
– Selectable PWM output with 11 bit resolution and
8 ms period
– 14 bit multiplex analog output
– 15 mT magnetic range
1.3. Applications
Due to the sensor’s versatile programming characteristics and low temperature drift, the HAC83x is the optimal system solution for PCB-less applications such as:
– Pedal, turbo-charger, throttle and EGR systems
– Distance measurements
Micronas
May 22, 2015; DSH000168_001E
5
HAC 83x
DATA SHEET
2. Ordering Information
Table 2–3: Available temperature ranges
A Micronas device is available in a variety of delivery
forms. They are distinguished by a specific ordering
code:
Temperature Code (T)
Temperature Range
A
TJ = 40 °C to +170 °C
XXX NNNN PA-Y-T-C-P-Q-SP
Further Code Elements
Temperature Range
Capacitor Configuration
The relationship between ambient temperature (TA)
and junction temperature (TJ) is explained in
Section 5.4. on page 29.
Package
Product Type
Product Group
For available variants for Configuration (C), Packaging
(P), Quantity (Q), and Special Procedure (SP) please
contact Micronas.
Fig. 2–1: Ordering Code Principle
For a detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging,
Handling”.
2.1. Device-Specific Ordering Codes
The HAC 83x is available in the following package,
capacitor, and temperature variants.
Table 2–4: Available ordering codes and
corresponding package marking
Available Ordering Codes
Package Marking
HAC830CV-L-A-[C-P-Q-SP]
830LA
HAC830CV-M-A-[C-P-Q-SP]
830MA
HAC835CV-L-A-[C-P-Q-SP]
835LA
Table 2–1: Available packages
Package Code (PA)
Package Type
CV
TO92UP-2
Values of the capacitors from VSUP to GND and OUT
to GND are uniquely identified by a letter added within
the Hall sensor package code, according to the
description in Fig. 2–1.
Table 2–2: Available capacitor configurations
Capacitance
Code (Y)
Capacitor from
VSUP to GND
Capacitor from
OUT to GND
M
100 nF
100 nF
L
100 nF
10 nF
For HAC835 with PWM output, please contact
Micronas for other capacitor configurations.
6
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
3. Functional Description
To improve EMC performance HAC83x devices integrate two capacitors within the package, between
VSUP and GND and OUT and GND respectively.
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall ICs are sensitive to magnetic north
and south polarity. The Hall voltage is converted to a
digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the
EEPROM registers, converted to an output signal. The
function and parameters for the DSP are explained in
Section 3.2. on page 9.
HAC
83x
VSUP
8
VOUT (V)
The HAC83x programmable linear Hall-Effect sensors
provide an output signal proportional to the magnetic
flux through the Hall plate and proportional to the supply voltage (ratiometric behavior) as long as the analog
output mode is selected. An additional PWM output
mode is available (for HAC 835 only).
VSUP (V)
3.1. General Function
7
6
5
VSUP
OUT
GND
Fig. 3–1: Programming with VSUP modulation
The setting of the LOCK register disables the programming of the EEPROM memory for all time. It also disables the reading of the memory. This register cannot
be reset.
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 3–1). After detecting a
command, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The output is switched off during the communication. Several
sensors in parallel to the same supply and ground line
can be programmed individually. The selection of each
sensor is done via its output pin.
For HAC835 the digital output for generation of the
BiPhase-M programming protocol is also used to generate the PWM output signal.
The open-circuit detection function provides a defined
output voltage for the analog output if the VSUP or
GND lines are broken.
Internal temperature compensation circuitry and spinning-current offset compensation enable operation
over the full temperature range with minimal changes
in accuracy and high offset stability. The circuitry also
reduces offset shifts due to mechanical stress from the
package.
The non-volatile memory consists of redundant and
non-redundant EEPROM cells. The non-redundant
EEPROM cells are only used to store production information inside the sensor.
In addition, the sensor IC is equipped with devices for
overvoltage and reverse-voltage protection at all pins.
Micronas
May 22, 2015; DSH000168_001E
7
HAC 83x
DATA SHEET
VSUP
Internally
Stabilized
Supply and
Protection
Devices
CSUP
Switched
Hall Plate
Temperature
Dependent
Bias
Oscillator
A/D
Converter
Digital
Signal
Processing
Open-Circuit,
Overvoltage,
Undervoltage
Detection
D/A
Converter
Analog
Output
50
Protection
Devices
50
EEPROM Memory
OUT
COUT
Supply
Level
Detection
Digital
Output
Open-Circuit
Detection
Lock Control
GND
Fig. 3–2: HAC83x block diagram
ADC-Readout Register
14 bit
Digital Output
14 bit
Digital Signal Processing
A/D
Converter
TC
TCSQ
5 bit
3 bit
TC Range Select 2 bit
Digital
Filter
Mode Register
Filter
Range
3 bit
2 bit
Other: 8 bit
Multiplier
Sensitivity
14 bit
Adder
VOQ
11 bit
Clamp
low
8 bit
Limiter
Clamp
high
9 bit
D/A
Converter
Lock
Micronas
1 bit
Register
EEPROM Memory
Lock
Control
Fig. 3–3: Details of EEPROM registers and digital signal processing
8
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
3.2. Digital Signal Processing and EEPROM
The DSP performs signal conditioning and allows
adaption of the sensor to the customer application.
The parameters for the DSP are stored in the
EEPROM registers. The details are shown in Fig. 3–3.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity:
name of the parameter
The EEPROM registers consist of four groups:
Group 1 contains the registers for the adaptation of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC,
TCSQ and TC-Range for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW
(MIN-OUT), CLAMP-HIGH (MAX-OUT) and OUTPUT
MODE. The output characteristic of the sensor is
defined by these parameters.
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output signal at B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
registers are used for oscillator frequency trimming,
A/D converter offset compensation, and several other
special settings.
An external magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. This value can be read by the A/DREADOUT register to ensure that the suitable converter modulation is achieved. The digital signal is filtered in the internal low-pass filter and manipulated
according to the settings stored in the EEPROM. The
digital value after signal processing is readable in the
D/A-READOUT register. The operating range of the
A/D converter is from 30 mT up to 150 mT
(HAC 830) or from 15 mT up to 150 mT (HAC 835).
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent
output voltage level and limited according to the clamping voltage levels. The result is converted to an analog
signal and stabilized by a push-pull output transistor
stage.
The D/A-READOUT at any given magnetic field
depends on the programmed magnetic field range, the
low-pass filter, TC values and CLAMP-LOW and
CLAMP-HIGH. The D/A-READOUT range is min. 0
and max. 16383.
Note: During application design, it should be taken
into consideration that the maximum and minimum D/A-READOUT should not violate the
error band of the operational range.
V OUT
Sensitivity = ----------------B
– The output voltage can be calculated as:
V OUT Sensitivity B + V OQ
The output voltage range can be clamped by setting
the registers CLAMP-LOW and CLAMP-HIGH in order
to enable failure detection (such as short-circuits to
VSUP or GND and open connections).
Group 3 contains the general purpose register GP. The
GP Register can be used to store customer information, like a serial number after manufacturing. Micronas
will use this GP REGISTER to store informations like,
lot number, wafer number, x and y position of the die
on the wafer, etc. This information can be read by the
customer and stored in it’s own data base or it can stay
in the sensor as is.
Group 4 contains the Micronas registers and LOCK for
the locking of all registers. The MICRONAS registers
are programmed and locked during production. These
Micronas
May 22, 2015; DSH000168_001E
9
HAC 83x
DATA SHEET
MODE register
The MODE register contains all bits used to configure the A/D converter and the different output modes.
Table 3–1: MODE register of HAC 830 / HAC 835
MODE
Bit Number
9
8
7
6
5
Parameter
RANGE
Reserved
OUTPUTMODE
4
3
FILTER
2
1
0
RANGE
(together with
bit 9)
Reserved
Magnetic Range
Filter
The RANGE bits define the magnetic field range of the
A/D converter.
The FILTER bits define the 3 dB frequency of the digital low pass filter.
Table 3–4: FILTER bits defining the 3 dB frequency
Table 3–2: Magnetic Range HAC835
3 dB Frequency
MODE [4:3]
80 Hz
00
500 Hz
10
1 kHz
11
2 kHz
01
Magnetic Range
RANGE
MODE
MODE [9]
MODE [2:1]
15 mT
1
00
30 mT
0
00
40 mT
1
10
60 mT
0
01
Output Format
80 mT
0
10
The OUTPUTMODE bits define the different output
modes of HAC83x.
100 mT
0
11
150 mT
1
11
Table 3–5: OUTPUTMODE for HAC835
Output Format
MODE [7:5]
Analog Output (12 bit)
000
Multiplex Analog Output
(continuously)
001
Table 3–3: Magnetic Range HAC830
Magnetic Range
RANGE
MODE
MODE [9]
MODE [2:1]
Multiplex Analog Output
(external trigger)
011
30 mT
0
00
Burn-In Mode
010
40 mT
1
10
PWM
110
60 mT
0
01
PWM (inverted polarity)
111
80 mT
0
10
100 mT
0
11
150 mT
1
11
10
Table 3–6: OUTPUTMODE for HAC830
Output Format
MODE [7:5]
Analog Output (12 bit)
000
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
In Analog Output mode the sensor provides an ratiometric 12 bit analog output voltage between 0 V and
5 V.
In Multiplex Analog Output mode the sensor transmits two analog 7-bit values, the LSB (least significant
bits) and the MSB (most significant bits) of the output
value separately. This enables the sensor to transmit a
14 bit signal.
– In external trigger mode the ECU can switch the output of the sensor between LSB and MSB by changing current flow direction through sensor output. In
case the output is pulled up by a 10 k resistor the
sensor sends the MSB. If the output is pulled down
the sensor will send the LSB. Maximum refresh rate
is about 500 Hz (2 ms).
– In continuous mode the sensor transmits first LSB
and then MSB continuously and the ECU must listen to the data stream sent by the sensor.
In the Multiplex Analog Output mode 1 LSB is represented by a voltage level change of 39 mV. In Analog
Output mode with14 bit 1 LSB would be 0.31 mV.
In Burn-In Mode the signal path of the sensors DSP is
stimulated internally without applied magnetic field. In
this mode the sensor provides a “saw tooth” shape
output signal. Shape and frequency of the saw tooth
signal depend on the programming of the sensor.
This mode can be used for Burn-In test in the customers production line.
In PWM mode the sensor provides an 11 bit PWM output. The PWM period is 8 ms and the output signal will
change between 0 V and 5 V supply voltage. The magnetic field information is coded in the duty cycle of the
PWM signal. The duty cycle is defined as the ratio
between the high time “s” and the period “d” of the
PWM signal (see Fig. 3–1).
Note: The PWM signal is updated with the rising edge.
If the duty cycle is evaluated with a microcontroller, the trigger-level for the measurement value
should be the falling edge. Please use the rising
edge to measure the PWM period.
For PWM (inverted) the duty-cycle value is then
inverted. Meaning that a 70% duty-cycle in normal
PWM mode is 30% duty-cycle in PWM (inverted)
mode.
Out
Vhigh
d
s
Vlow
Update
time
Fig. 3–1: Definition of PWM signal
TC Register
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaptation is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can
be matched to the magnet and the sensor assembly.
As a result, the output voltage characteristic can be
constant over the full temperature range. The sensor
can compensate for linear temperature coefficients
ranging from about 3100 ppm/K up to 1000 ppm/K
and quadratic coefficients from about -7 ppm/K² to
2 ppm/K².
The full TC range is separated in the following four TC
range groups (see Table 3–7 and Table 5–1 on
page 28).
Table 3–7: TC-Range Groups
TC-Range [ppm/k]
TC-Range Group
(see also Table 5–1
on page 27)
3100 to 1800
0
1750 to 550
2
500 to +450 (default value)
1
+450 to +1000
3
TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example
0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ =
1. Please refer to Section 5.3. for more details.
Micronas
May 22, 2015; DSH000168_001E
11
HAC 83x
DATA SHEET
Sensitivity
GP Register
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. The Sensitivity is programmable between 4 and 4. For VSUP = 5 V, the register can
be changed in steps of 0.00049.
This register can be used to store some information,
like production date or customer serial number.
Micronas will store production lot number, wafer number and x,y coordinates in registers GP1 to GP3. The
total register contains four blocks with a length of 13 bit
each. The customer can read out this information and
store it in his production data base for reference or he
can store own production information instead.
For all calculations, the digital value from the magnetic
field of the D/A converter is used. This digital information is readable from the D/A-READOUT register.
V OUT 16383
SENSITIVITY = -------------------------------------------------------------- Sens INITIAL
DA – Readout V DD
VOQ
The VOQ register contains the parameter for the adder
in the DSP. VOQ is the output signal without external
magnetic field (B = 0 mT) and programmable from
VSUP (100% duty-cycle) up to VSUP (100% dutycycle). For VSUP = 5 V, the register can be changed in
steps of 4.9 mV (0.05% duty-cycle).
Note: If VOQ is programmed to a negative value, the
maximum output signal is limited to:
Note: This register is not a guarantee for traceability.
To read/write this register it is mandatory to
read/write all GP register one after the other
starting with GP0. In case of writing the registers it is necessary to first write all registers followed by one store sequence at the end. Even if
only GP0 should be changed all other GP registers must first be read and the read out data
must be written again to these registers.
LOCKR
By setting the 1-bit register all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation. This bit is active after the first
power-off and power-on sequence after setting the
LOCK bit.
V OUTmax = V OQ + V SUP
Warning: This register cannot be reset!
Clamping Levels
The output signal range can be clamped in order to
detect failures like shorts to VSUP or GND or an open
circuit.
The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping limit is programmable between 0 V (min. duty-cycle) and VSUP/2 (50%
duty-cycle). For VSUP = 5 V, the register can be
changed in steps of 9.77 mV (0.195% duty-cycle).
The CLAMP-HIGH register contains the parameter for
the upper limit. The upper clamping voltage is programmable between 0 V (min. duty-cycle) and VSUP
(max. duty-cycle). For VSUP = 5 V, in steps of 9.77 mV
(0.195% duty-cycle).
12
D/A-READOUT
This 14-bit register delivers the actual digital value of
the applied magnetic field after the signal processing.
This register can be read out and is the basis for the
calibration procedure of the sensor in the system environment.
Note: The MSB and LSB are reversed compared to all
the other registers. Please reverse this register
after readout.
Note: HAC835: During calibration it is mandatory to
select the Analog Output as output format. The
D/A-Readout register can be read out only in the
Analog Output mode. For all other modes the
result read back from the sensor will be a 0.
After the calibration the output format can than
easily be switched to the wanted output mode,
like PWM.
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
3.3. Calibration Procedure
Step 2: Initialize DSP
3.3.1. General Procedure
As the D/A-READOUT register value depends on
the settings of SENSITIVITY, VOQ and CLAMPLOW/HIGH, these registers have to be initialized
with defined values, first:
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for generation of the serial telegram for programming (Programmer Board Version 5.1) and the
corresponding software (PC83x) for the input of the
register values.
For the individual calibration of each sensor in the customer application, a two point adjustment is recommended. The calibration shall be done as follows:
– VOQINITIAL = 2.5 V
– Clamp-Low = 0 V
– Clamp-High = 4.999 V
– SensINITIAL (see table 3-1.)
Table 3–1:
Step 1: Input of the registers which are not
required to be adjusted individually
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, the
output mode and the GP Register value are given for
this application. Therefore, the values of the following
registers should be identical for all sensors of the customer application.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the
sensor position)
3dB Filter frequency
SensINITIAL
80 Hz
0.6
500 Hz
0.39
1 kHz
0.42
2 kHz
0.83
Step 3: Define Calibration Points
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for VOUT1
and VOUT2 result from the application requirements.
– OUTPUTMODE
– TC, TCSQ and TC-RANGE
(depends on the material of the magnet and the
other temperature dependencies of the application)
– GP
(if the customer wants to store own production information. It is not necessary to change this register)
As the clamping levels are given. They have an influence on the D/A-Readout value and have to be set
therefore after the adjustment process.
Lowclampingvoltage V OUT1,2 Highclampingvoltage
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.
Write the appropriate settings into the HAC83x registers.
Micronas
May 22, 2015; DSH000168_001E
13
HAC 83x
DATA SHEET
Step 4: Calculation of VOQ and Sensitivity
Step 5: Locking the Sensor
Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/AREADOUT1.
The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK
function becomes effective after power-down and
power-up of the Hall IC. The sensor is now locked and
does not respond to any programming or reading commands.
Now, set the system to calibration point 2, read the
register D/A-READOUT again, and get the value D/AREADOUT2.
With these values and the target values VOUT1 and
VOUT2, for the calibration points 1 and 2, respectively,
the values for Sensitivity and VOQ are calculated as:
Warning: This register can not be reset!
Sensitivity = Sens INITIAL
Vout2 – Vout1
-------------------------------------------------------------------------------- 16384
-------------- D/A-Readout2 – D/A-Readout1
5
1
16384V OQ = ------ Vout2
-----------------------------------–
16
5
1
D/A-Readout2 – 8192 Sensitivity ---------------------------SensINITIAL
5
-----------1024
This calculation has to be done individually for each
sensor.
Next, write the calculated values for Sensitivity and
VOQ into the IC for adjusting the sensor. At that time it
is also possible to store the application specific values
for Clamp-Low and Clamp-High into the sensors
EEPROM.The sensor is now calibrated for the customer application. However, the programming can be
changed again and again if necessary.
Note: For a recalibration, the calibration procedure
has to be started at the beginning (step 1). A
new initialization is necessary, as the initial values from step 1 are overwritten in step 4.
14
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
4. Specifications
4.1. Outline Dimensions
E1
A2
Bd
x
Center of
sensitive area
F1
D1
y
A3
1
2
3
L
F2
b
e
P
A4
c
0
physical dimensions do not include moldflash.
A4, Bd, x, y= these dimensions are different for each sensor type and are specified in the data sheet.
2.5
5 mm
scale
solderability is guaranteed between end of pin and distance F1.
Sn-thickness might be reduced by mechanical handling.
UNIT
A2
A3
b
c
D1
e
E1
F1
F2
L
P
mm
1.55
1.45
0.85
0.42
0.36
5.60
5.50
1.905
5.38
5.28
1.20
0.80
0.60
0.42
15.0
max
0.3x45°
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
-
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
13-07-01
06703.0001.4
ZG001100_001_02
© Copyright 2009 Micronas GmbH, all rights reserved
Fig. 4–1:
TO92UP-2: Plastic Transistor Standard UP package, 3 pins
Weight approximately 0.212 g
Micronas
May 22, 2015; DSH000168_001E
15
HAC 83x
DATA SHEET
Δp
Δh
Δp
W2
L3
H1
Δh
B
W
L
W0
W1
H
A
D0
P2
feed direction
F1
P0
F2
T
T1
view A-B
UNIT
D0
F1
F2
H
H1
Δh
L
P0
P2
Δp
T
T1
W
W0
W1
W2
mm
4.0
2.1
1.7
2.1
1.7
26
24
30.55
±1.0
11.0
max
13.2
12.2
7.05
5.65
±1.0
0.5
0.9
18.0
6.0
9.0
0.3
UNIT
L3
mm
1
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
-
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
13-12-24
06904.0000.4
ZG001103
© Copyright 2010 Micronas GmbH, all rights reserved
Fig. 4–2:
TO92UP-2: Dimensions ammopack inline, not spread
16
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
4.2. Soldering, Welding and Assembly
Information related to solderability, welding, assembly, and second-level packaging is included in the document
“Guidelines for the Assembly of Micronas Packages”. It is available on the Micronas website or on the service portal.
4.3. Pin Connections and Short Descriptions
Pin No.
Pin
Name
Type
Short Description
1
VSUP
SUPPLY
Supply Voltage and
Programming Pin
2
GND
GND
Ground
3
OUT
I/O
Push-Pull Output
and Selection Pin
1
VSUP
OUT
CSUP
COUT
2
3
GND
Fig. 4–3: Pin configuration
4.4. Sensitive Area
4.4.1. Dimension
0.25 mm x 0.25 mm
4.4.2. Position
TO92UP-2
A4
0.45 mm nominal
Bd
0.3 mm
x
0 mm nominal (center of package)
y
1.90 mm nominal
Micronas
May 22, 2015; DSH000168_001E
17
HAC 83x
DATA SHEET
4.5. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
Condition
VSUP
Supply Voltage
1
8.5
8.5
V
t < 96 h3)
VSUP
Supply Voltage
1
16
16
V
t < 1 h3)
VOUT
Output Voltage
3
5
16
V
VOUT VSUP
Excess of Output Voltage
over Supply Voltage
3,1
2
V
IOUT
Continuous Output Current
3
10
10
mA
tSh
Output Short Circuit Duration
3
10
min
VESD
ESD Protection1)
1
3
8
7.5
8
7.5
kV
TJ
Junction Temperature under
bias2)
50
190
°C
1)
2)
3)
18
AEC-Q100-002 (100 pF and 1.5 k)
For 96 h - Please contact Micronas for other temperature requirements
No cumulated stress
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
4.5.1. Storage and Shelf Life
Information related to storage conditions of Micronas sensors is included in the document “Guidelines for the
Assembly of Micronas Packages”. It gives recommendations linked to moisture sensitivity level and long-term storage. It is available on the Micronas website or on the service portal.
4.6. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VSUP
Supply Voltage
1
4.5
12.4
5
12.5
5.5
12.6
V
Condition
During programming
IOUT
Continuous Output Current
3
1.2
1.2
mA
RL
Load Resistor
3
4.5
10
k
Can be pull-up or pulldown resistor (analog
output only)
CL
Load Capacitance
3
0
100
1000
nF
For analog output only.
Integrated capacitor tolerance considered.
Load capacitance
including tolerance
should not exceed max.
value.
NPRG
Number of EEPROM
Programming Cycles
100
cycles
0°C < Tamb < 55°C
TJ
Junction Temperature
Range1)
40
40
40
125
150
170
°C
°C
°C
for 8000 h2)
for 2000 h2)
for 1000 h2)
TA
Ambient Temperature
Range
40
150
°C
1)
Depends on the
2) Time values are
Micronas
temperature profile of the application. Please contact Micronas for life time calculations.
not cumulative
May 22, 2015; DSH000168_001E
19
HAC 83x
DATA SHEET
4.7. Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended
Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Conditions
ISUP
Supply Current
over Temperature Range
1
5
7
10
mA
CSUP
Integrated Supply Capacitor Tolerance
1
10
+10
%
COUT
Integrated Output Capacitor Tolerance
3
@ 25 °C and VSUP=5 V
Variation is given relative to
nominal value. For typical
values see Table 2–2 on
page 6
ES
Error in Magnetic Sensitivity over
Temperature Range5)
3
4
1
0
0
4
1
%
HAC830
HAC835
VSUP = 5 V; 60 mT range,
3 dB frequency = 500 Hz, TC
& TCSQ for linearized
temperature coefficients
(see Section 4.7.1. on
page 23)
Analog Output (HAC830 & HAC835)
Resolution
3
12
bit
ratiometric to VSUP 1)
DNL
Differential Non-Linearity of D/A
converter2)
3
2.0
1.5
0
0
2.0
1.5
LSB
HAC830
HAC835
Only @ 25°C ambient
temperature
INL
0.5
0
0.5
%
% of supply voltage3)
Non-Linearity of Output Voltage over
Temperature
3
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VSUP)
3
0.25
0
0.25
%
VOUT1 VOUT2> 2 V
during calibration procedure
VOffset
Offset Drift over Temperature Range
VOUT(B=0 mT)25°C
VOUT(B=0 mT)max5)
3
0.6
0.2
0.25
0.1
0.6
0.2
%
VSUP
HAC830
HAC835
For VOUT = 0.35 V ... 4.65 V;
VSUP = 5 V, Sensitivity 0.95
VSUP = 5 V; 60 mT range,
3 dB frequency = 500 Hz,
TC = 15,
TCSQ = 1,
TC-Range = 1
0.65 < sensitivity < 0.65
1)
2)
3)
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096
Only tested at 25°C. The specified values are test limits only. Overmolding and packaging might influence this parameter
If more than 50% of the selected magnetic field range is used (Sensitivity 0.5) and the temperature compensation is suitable.
INL = VOUT VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature.
4)
Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL
and above VOUTH
5)
Tambient = 150 °C
20
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Conditions
VOUTCL
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
3
15
0
15
mV
VOUTCH Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
3
15
0
15
mV
RL = 5 k, VSUP = 5 V
Spec values are derived from
resolutions of the registers
Clamp-Low/Clamp-High and
the parameter Voffset
VOUTH
Upper Limit of Signal Band4)
3
4.65
4.8
V
VSUP = 5 V,
1 mA IOUT 1 mA
VOUTL
Lower Limit of Signal Band4)
3
0.2
0.35
V
VSUP = 5 V, 1 mA IOUT
1 mA
ROUT
Output Resistance over
Recommended Operating Range
3
1
10
VOUTLmax VOUT VOUTHmin
tr(O)
Step Response Time of Output6)
3
3
0.9
0.6
0.4
13
1.2
0.8
0.5
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2 kHz
time from 10% to 90% of final
output voltage for a steplike
signal Bstep from 0 mT to Bmax
tPOD
Power-Up Time (Time to reach stable
Output Voltage)
1.5
1.7
1.9
ms
90% of VOUT
BW
Small Signal Bandwidth (3 dB)
3
2
kHz
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
VOUTn
Noise Output VoltageRMS
3
1
5
mV
magnetic range = 60 mT
3 dB Filter frequency = 500 Hz
Sensitivity 0.7 6)
DACGE
D/A-Converter Glitch Energy
3
40
nVs
7)
4) Signal
Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL
and above VOUTH
6)
Guaranteed by design
7)
The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state.
This energy is normally specified as the area of the glitch in nVs.
Micronas
May 22, 2015; DSH000168_001E
21
HAC 83x
Symbol
DATA SHEET
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Conditions
Resolution
3
11
bit
3
0.3
0
0.3
%
DUTY
Accuracy of Duty Cycle at Clamp Low
over Temperature Range
DCMAX
-DUTY
Accuracy of Duty Cycle at Clamp High
over Temperature Range
3
0.3
0
0.3
%
VOUTH
Output High Voltage
3
4.8
V
VSUP = 5 V,
1 mA IOUT 1mA
VOUTL
Output Low Voltage
3
0.2
V
VSUP = 5 V,
1 mA IOUT 1mA
fPWM
PWM Output Frequency over
Temperature Range
3
105
125
145
Hz
tPOD
Power-Up Time (Time to reach valid
Duty Cycle)
3
8.5
ms
tr(O)
Step Response Time of Output
3
3
0.9
0.6
0.4
13
1.2
0.8
0.5
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
Time to 90% of final output
voltage for a steplike
signal Bstep from 0 mT to Bmax
198
146
53
38
K/W
Measured with a 1s0p board
Measured with a 1s1p board
Measured with a 1s0p board
Measured with a 1s1p board
PWM Output (HAC835 only)
DCMIN-
Spec values are derived from
resolutions of the registers
Clamp-Low/Clamp-High and
the parameter DCOQoffset
TO92UP-2 Package
Thermal Resistance
Rthja
junction to air
Rthjc
junction to case
22
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
4.7.1. Definition of Sensitivity Error ES
ES is the maximum of the absolute value of the quotient of the normalized measured value1 over the normalized
ideal linear2 value minus 1:
ES = max abs meas
------------- – 1
ideal
{Tmin, Tmax}
In the example below, the maximum error occurs at 10°C:
ES = 1.001
------------- – 1 = 0.8%
0.993
1:
2
normalized to achieve a least-squares method straight line that has a value of 1 at 25°C
: normalized to achieve a value of 1 at 25°C
ideal 200 ppm/k
1.03
relative sensitivity related to 25 °C value
least-squares method straight line
of normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-squares
method straight line at 25 °C
1.02
1.01
1.001
1.00
0.992
0.99
0.98
-50
-25
-10
0
25
50
75 100
temperature [°C]
125
150
175
Fig. 4–4: ES definition example
Micronas
May 22, 2015; DSH000168_001E
23
HAC 83x
DATA SHEET
4.7.2. Power-On Operation
at TJ = 40 °C to +170 °C, after programming and locking. Typical Characteristics for TJ = 25 °C.
Symbol
Parameter
Min.
Typ.
Max.
Unit
PORUP
Power-On Reset Voltage (UP)
3.4
V
PORDOWN
Power-On Reset Voltage (DOWN)
3.0
V
97%VSUP
Vout [V]
97%VSUP
97%VSUP
Ratiometric Output
3.5 V
VSUP,UV
5
VSUP,OV
VSUP [V]
: Output Voltage undefined
VSUP,UV = Undervoltage Detection Level
VSUP,OV = Overvoltage Detection Level
Fig. 4–5: Analog output behavior for different supply voltages
VSUP
First PWM starts
5V
4.2 V
VSUP,UVmin.
time
tPOD
VOUT
Output undefined
The first period contains
no valid data
No valid signal
time
Valid signal
Fig. 4–6: Power-up behavior of HAC835 with PWM output activated
24
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
4.8. Diagnostics and Safety Features
4.8.1. Overvoltage and Undervoltage Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VSUP,UV
Undervoltage detection
level
1
4.2
4.5
V
1)2)
VSUP,OV
Overvoltage detection
level
1
8.5
8.9
10.0
V
1)2)
1)
If the supply voltage drops below VSUP,UV or rises above VSUP,OV, the output voltage is switched to
VSUP (97% of VSUP at RL = 10 k to GND).
2)
If the PWM output of HAC835 is activated, then the output signal will follow VSUP and PWM signal is switched off
Note: The over- and undervoltage detection is activated only after locking the sensor!
4.8.2. Open-Circuit Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Comment
VOUT
Output Voltage at
open VSUP line
3
0
0
0.15
V
VSUP = 5 V
RL = 10 kto 200k
0
0
0.2
V
VSUP = 5 V
5 kRL < 10 k
0
0
0.25
V
VSUP = 5 V
4.5 kRL < 10 k1)
4.85
4.9
5.0
V
VSUP = 5 V
RL = 10 kto 200k
4.8
4.9
5.0
V
VSUP = 5 V
5 kRL < 10 k
4.75
4.9
5.0
V
VSUP = 5 V
4.5 kRL < 10 k1)
VOUT
1) not
Output Voltage at
open GND line
3
tested
Note: In case that the PWM output mode is used the sensor will stop transmission of the PWM signal if VSUP or
GND lines are broken and VOUT will be according to above table.
Micronas
May 22, 2015; DSH000168_001E
25
HAC 83x
DATA SHEET
4.8.3. Overtemperature and Short-Circuit Protection
If overtemperature TJ>180 °C or a short-circuit occurs,
the output will go into tri-state condition.
4.8.4. EEPROM Redundancy
The non-volatile memory uses the Micronas Fail Safe
Redundant Cell technology well proven in automotive
applications.
4.8.5. ADC Diagnostic
The A/D-READOUT register can be used to avoid
under/overrange effects in the A/D converter.
26
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
5. Application Notes
5.2. Use of two HAC83x in Parallel
5.1. Application Circuit
Two different HAC83x sensors which are operated in
parallel to the same supply and ground line can be programmed individually. In order to select the IC which
should be programmed, both Hall ICs are inactivated
by the “Deactivate” command on the common supply
line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only the activated sensor will
react to all following read, write, and program commands. If the second IC has to be programmed, the
“Deactivate” command is sent again, and the second
IC can be selected.
Thanks to the integrated capacitors, it is not necessary
to connect additional capacitors between ground and
the supply voltage or the output voltage pin.
Built-in capacitors are monolithic ceramic capacitors
with X8R characteristics. They are specifically suited
for high temperature applications with stable capacitance value (±10%) up to 150 °C, and therefore suitable for harsh automotive operating conditions. The
maximum rated capacitor voltage is 25 V.
Note: The multi-programming of two sensors requires
a 10 k pull-down resistor on the sensors output
pins.
VSUP
OUT
HAC83x
VSUP
OUT A & Select A
GND
Fig. 5–1: Recommended application circuit (analog
output signal), no additional capacitors needed
HAC83x
Sensor A
HAC83x
Sensor B
OUT B & Select B
GND
Fig. 5–2: Recommended application circuit (parallel
operation of two HAC83x), no additional capacitors
needed
Micronas
May 22, 2015; DSH000168_001E
27
HAC 83x
DATA SHEET
Table 5–1: Temperature compensation codes
5.3. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC, TCSQ and
TC-Range codes for linear compensation is given in
the following table. In addition to the linear change of
the magnetic field with temperature, the curvature can
be adjusted as well. For this purpose, other TC, TCSQ
and TC-Range combinations are required which are
not shown in the table. Please contact Micronas for
more detailed information on this higher order temperature compensation.
Table 5–1: Temperature compensation codes
TCSQ
TC-Range
Group
TC
TCSQ
1200
2
12
5
1300
2
12
0
1400
2
8
3
1500
2
4
7
1600
2
4
1
1700
2
0
6
1800
0
31
6
1900
0
28
7
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
Group
1075
3
31
7
2000
0
28
2
1000
3
28
1
2100
0
24
6
900
3
24
0
2200
0
24
1
750
3
16
2
2400
0
20
0
675
3
12
2
2500
0
16
5
575
3
8
2
2600
0
14
5
450
3
4
2
2800
0
12
1
400
1
31
0
2900
0
8
6
250
1
24
1
3000
0
8
3
150
1
20
1
3100
0
4
7
50
1
16
2
3300
0
4
1
0
1
15
1
3500
0
0
4
100
1
12
0
200
1
8
1
300
1
4
4
400
1
0
7
500
1
0
0
600
2
31
2
700
2
28
1
800
2
24
3
900
2
20
6
1000
2
16
7
1100
2
16
2
28
TC
Temperature
Coefficient of
Magnet (ppm/K)
Note: Table 5–1 shows only some approximate values.
Micronas recommends to use the TC-Calc software to find optimal settings for temperature
coefficients. Please contact Micronas for more
detailed information.
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
5.4. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + T
At static conditions and continuous operation, the following equation applies:
T = ISUP * VSUP * RthjX
The X represents junction-to-air or junction-to-case.
In order to estimate the temperature difference T
between the junction and the respective reference
(e.g. air, case, or solder point) use the max. parameters for ISUP, RthX, and the max. value for VSUP from
the application.
The following example shows the result for junction-to air conditions. VSUP = 5.5 V, Rthja = 250 K/W and
ISUP = 10 mA the temperature difference T = 13.75 K.
The junction temperature TJ is specified. The maximum ambient temperature TAmax can be estimated as:
TAmax = TJmax T
5.5. EMC and ESD
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Micronas
May 22, 2015; DSH000168_001E
29
HAC 83x
DATA SHEET
6. Programming
tr
tf
VSUPH
6.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a
serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VSUP-line and the output. The bit time for the
VSUP-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
tp0
logical 0
tp0
or
VSUPL
tp1
VSUPH
tp0
logical 1
VSUPL
or
tp0
tp1
Fig. 6–1: Definition of logical 0 and 1 bit
6.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 6–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
– Read a register (see Fig. 6–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 6–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 6–5)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors have to be pulled
to ground. With an Activate pulse on the appropriate
output pin, an individual sensor can be selected. All
following commands will only be accepted from the
activated sensor.
30
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
Table 6–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
Remarks
VSUPL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VSUPH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise time
1
0.05
ms
see Fig. 6–1 on page 30
tf
Fall time
1
0.05
ms
see Fig. 6–1 on page 30
tp0
Bit time on VSUP
1
1.7
1.75
1.9
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Duty-Cycle Change for logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VSUPPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise time of programming voltage
1
0.2
0.5
1
ms
see Fig. 6–1 on page 30
tfp
Fall time of programming voltage
1
0
1
ms
see Fig. 6–1 on page 30
tw
Delay time of programming voltage after
Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate pulse
3
3
4
5
V
tact
Duration of an Activate pulse
3
0.05
0.1
0.2
ms
Vout,deact
Output voltage after deactivate command
3
0
0.1
0.2
V
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VSUP
Acknowledge
VOUT
Fig. 6–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
DAT
DP
VOUT
Fig. 6–3: Telegram for coding a Read command
Micronas
May 22, 2015; DSH000168_001E
31
HAC 83x
DATA SHEET
tPROG
trp
tfp
VSUPPROG
ERASE, PROM, and LOCK
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
VOUT
tw
Fig. 6–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 6–5: Activate pulse
Address Parity Bit (AP)
6.3. Telegram Codes
This parity bit is “1” if the number of zeros within the 4
Address bits is uneven. The parity bit is “0” if the number of zeros is even.
Sync Bit
Data Bits (DAT)
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The 14 Data Bits contain the register information.
Command Bits (COM)
The registers use different number formats for the Data
Bits. These formats are explained in Section 6.4.
The Command code contains 3 bits and is a binary
number. Table 6–2 shows the available commands and
the corresponding codes for the HAC83x.
In the Write command, the last bits are valid. If, for
example, the TC register (10 bits) is written, only the
last 10 bits are valid.
Command Parity Bit (CP)
In the Read command, the first bits are valid. If, for
example, the TC register (10 bits) is read, only the first
10 bits are valid.
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Address Bits (ADR)
The Address code contains 4 bits and is a binary number. Table 6–3 shows the available addresses for the
HAC83x registers.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
32
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
Table 6–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all non-volatile registers
ERASE
5
erase all non-volatile registers
6.4. Number Formats
6.5. Register Information
Binary number:
CLAMP-LOW
The most significant bit is given as first, the least significant bit as last digit.
– The register range is from 0 up to 255.
– The register value is calculated by:
Example: 101001 represents 41 decimal.
LowClampingVoltage 2
CLAMP-LOW = --------------------------------------------------------------- 255
V SUP
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
0101001 represents +41 decimal
1101001 represents 41 decimal
CLAMP-HIGH
– The register range is from 0 up to 511.
– The register value is calculated by:
Two’s-complement number:
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example:
0101001 represents +41 decimal
1010111 represents 41 decimal
HighClampingVoltage
CLAMP-HIGH = ------------------------------------------------------ 511
V SUP
VOQ
– The register range is from 1024 up to 1023.
– The register value is calculated by:
V OQ
VOQ = ------------- 1024
V SUP
SENSITIVITY
– The register range is from 8192 up to 8191.
– The register value is calculated by:
SENSITIVITY = Sensitivity 2048
Micronas
May 22, 2015; DSH000168_001E
33
HAC 83x
DATA SHEET
TC
D/A-READOUT
– The TC register range is from 0 up to 1023.
– This register is read only.
– The register value is calculated by:
– The register range is from 0 up to 16383.
TC = GROUP 256 + TCValue 8 + TCSQValue
DEACTIVATE
– This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
MODE
– The register range is from 0 up to 1023 and contains
the settings for FILTER, RANGE, OUTPUTMODE:
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
MODE = RANGE Mode 9 512 +
OUTPUTMODE 32 +
FILTER 8 + RANGE Mode 2:1 2
Table 6–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
CLAMP-LOW
1
8
binary
read/write/program
Low clamping voltage
CLAMP-HIGH
2
9
binary
read/write/program
High clamping voltage
VOQ
3
11
two’s compl. binary
read/write/program
Output quiescent voltage
SENSITIVITY
4
14
signed binary
read/write/program
MODE
5
10
binary
read/write/program
Range, filter, output mode
LOCKR
6
2
binary
read/write/program
Lock Bit
A/D READOUT
7
14
two’s compl. binary
read
GP REGISTERS 1...3
8
3x13
binary
read/write/program
1)
D/A-READOUT
9
14
binary
read
Bit sequence is reversed
during read
TC
11
10
binary
read/write/program
bits 0 to 2 TCSQ
bits 3 to 7 TC
bits 8 to 9 TC Range
GP REGISTER 0
12
13
binary
read/write/program
1)
DEACTIVATE
15
12
binary
write
Deactivate the sensor
1)
To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In
case of a writing the registers it is necessary to first write all registers followed by one store sequence at the end.
Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written
again to these registers.
34
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
Table 6–4: Data formats
Char
DAT3
DAT2
DAT1
DAT0
Register
Bit
15
14
13
12
11
10
09
08
07
06
05
04
03
02
01
00
CLAMP LOW
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
CLAMP HIGH
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
VOQ
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
SENSITIVITY
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MODE
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
LOCKR
Write
Read
V
V
GP 1...3
Registers
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
D/AREADOUT1)
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
TC
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
GP 0
Register
Write
Read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DEACTIVATE
Write
1
0
0
0
0
0
0
0
1
1
1
1
V: valid, : ignore, bit order: MSB first
LSB first
1)
Micronas
May 22, 2015; DSH000168_001E
35
HAC 83x
DATA SHEET
6.6. Programming Information
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands must be zero.
ERASE and PROM act on all registers in parallel.
If all HAC83x registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment
and programming of HAC83x. The LOCK function is active after the next power-up of the sensor.
The success of the lock process must be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
36
May 22, 2015; DSH000168_001E
Micronas
HAC 83x
DATA SHEET
7. Data Sheet History
1. Advance Information: “HAC 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family with Integrated Caps”, Feb. 13, 2014,
AI000170_001EN. First release of the advance
information.
2. Preliminary Data Sheet: “HAC 83x Robust MultiPurpose Programmable Linear Hall-Effect Sensor
Family with Integrated Caps”, Aug. 7, 2014,
PD000216_01EN. First release of the preliminary
data sheet.
Major changes:
– Ordering information updated
– Package drawing updated, Taping Information
added
– Fig. 4.5 changed: Analog output behavior for different supply voltages
– Values optimized for Ratiometric Error of Output
over Temperature (ER) and
Noise Output VoltageRMS (VOUTn)
3. Data Sheet: “HAC 83x Robust Multi-Purpose
Programmable Linear Hall-Effect Sensor Family with
Integrated Caps”, May 22, 2015,
DSH000168_001E. First release of the data sheet.
Major changes:
– new Table 3-1.
– update tr(O)
– update Calculation VOQ of and Sensitivity
– MODE register description changed
– Offset Correction function removed
– Recommended Operating Conditions:
Ambient Temperature Range specified,
Conditions for Load Capacitance updated
Micronas
May 22, 2015; DSH000168_001E
37