HAL 83x Robust Multi-Purpose Programmable Linear

Hardware
Documentation
D at a S h e e t
®
HAL 83x
Robust Multi-Purpose Programmable
Linear Hall-Effect Sensor Family
Edition May 22, 2015
DSH000169_002EN
HAL 83x
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
Micronas Trademarks
– HAL
Micronas Patents
EP0 953 848, EP 1 039 357, EP 1 575 013
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
military, aviation, or aerospace applications! Unless
explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL 83x
DATA SHEET
Contents
Page
Section
Title
4
4
4
4
1.
1.1.
1.2.
1.2.1.
Introduction
Applications
General Features
Device-specific features of HAL835
5
5
2.
2.1.
Ordering Information
Device-Specific Ordering Codes
6
6
8
12
12
3.
3.1.
3.2.
3.3.
3.3.1.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
14
14
18
18
18
18
19
20
20
21
23
24
25
25
25
25
25
25
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.6.1.
4.7.
4.8.
4.8.1.
4.8.2.
4.9.
4.9.1.
4.9.2.
4.9.3.
4.9.4.
4.9.5.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
Pin Connections and Short Descriptions
Dimensions of Sensitive Area
Physical Dimensions
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Definition of sensitivity error ES
Power-On Operation
Diagnostics and Safety Features
Overvoltage and Undervoltage Detection
Open-Circuit Detection
Overtemperature and Short-Circuit Protection
EEPROM Redundancy
ADC Diagnostic
26
26
26
5.
5.1.
5.2.
27
28
28
5.3.
5.4.
5.5.
Application Notes
Application Circuit (for analog output mode only)
Use of two HAL83x in Parallel
(for analog output mode only)
Temperature Compensation
Ambient Temperature
EMC and ESD
29
29
29
31
32
32
34
6.
6.1.
6.2.
6.3.
6.4.
6.5.
6.6.
Programming
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
35
7.
Data Sheet History
3
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Micronas
HAL 83x
DATA SHEET
Robust Multi-Purpose Programmable Linear HallEffect Sensor Family
Release Note: Revision bars indicate significant
changes to the previous edition.
The sensor is designed for hostile industrial and
automotive applications and operates with typically
5 V supply voltage in the ambient temperature range
from 40 °C up to 160 °C. The HAL 83x is available
in the very small leaded package TO92UT-2 and is
AECQ 100 qualified.
1. Introduction
The HAL83x are new members of the Micronas family
of programmable linear Hall sensors. This robust multipurpose family can replace the HAL 805, HAL 815,
HAL 825, and HAL810. It offers better quality,
extended functionality and performance compared to
the first generation devices. This new family consists of
two members: the HAL830 and the HAL835. HAL835
is the device with the full feature set and maximum performance compared with the HAL830.
1.1. Applications
The HAL83x is an universal magnetic field sensor with
linear output based on the Hall effect. The IC can be
used for angle or distance measurements when combined with a rotating or moving magnet. The major
characteristics like magnetic field range, sensitivity,
output quiescent voltage (output voltage at B = 0 mT),
and output voltage range are programmable in a nonvolatile memory. The sensor has a ratiometric output
characteristic, which means that the output voltage is
proportional to the magnetic flux and the supply voltage. It is possible to program several devices connected to the same supply and ground line.
– high-precision linear Hall-effect sensor family with
12 bit ratiometric analog output and digital signal
processing
The HAL83x features a temperature-compensated
Hall plate with spinning-current offset compensation,
an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with
redundancy and lock function for the calibration data,
an EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection
devices at all pins.
The HAL83x is programmable by modulating the supply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly.
Due to the sensor’s versatile programming characteristics and low temperature drift, the HAL 83x is the optimal system solution for applications such as:
– Pedal, turbo-charger, throttle and EGR systems
– Distance measurements
1.2. General Features
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– operates from TJ = 40 °C up to 170 °C
– operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
– operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– programmable magnetic field range from 30 mT up
to 150 mT
– open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down resistor, overvoltage and undervoltage detection
– for programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be done via the output pin
– temperature characteristics are programmable for
matching common magnetic materials
– programmable clamping function
– programming via modulation of the supply voltage
– overvoltage and reverse-voltage protection at all pins
– magnetic characteristics extremely robust against
mechanical stress
In addition, the temperature compensation of the Hall
IC can be fit to common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high
accuracy.
– short-circuit protected push-pull output
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
– selectable PWM output with 11 bit resolution and
8 ms period
4
– EMC and ESD optimized design
1.2.1. Device-specific features of HAL835
– very low offset and sensitivity drift over temperature
– 14 bit multiplex analog output
– 15 mT magnetic range
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Micronas
HAL 83x
DATA SHEET
2. Ordering Information
Table 2–2: Available temperature ranges
A Micronas device is available in a variety of delivery
forms. They are distinguished by a specific ordering
code:
Temperature Code (T)
Temperature Range
A
TJ = 40 °C to +170 °C
XXX NNNN PA-T-C-P-Q-SP
Further Code Elements
Temperature Range
Package
The relationship between ambient temperature (TA)
and junction temperature (TJ) is explained in
Section 5.4. on page 28.
Product Type
Product Group
Fig. 2–1: Ordering Code Principle
For a detailed information, please refer to the brochure:
“Hall Sensors: Ordering Codes, Packaging, Handling”.
For available variants for Configuration (C), Packaging
(P), Quantity (Q), and Special Procedure (SP) please
contact Micronas.
Table 2–3: Available ordering codes and
corresponding package marking
2.1. Device-Specific Ordering Codes
The HAL 83x is available in the following package and
temperature variants.
Table 2–1: Available packages
Package Code (PA)
Package Type
UT
TO92UT-1/2
Micronas
Available Ordering Codes
Package Marking
HAL830UT-A-[C-P-Q-SP]
830A
HAL835UT-A-[C-P-Q-SP]
835A
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HAL 83x
DATA SHEET
3. Functional Description
HAL
83x
3.1. General Function
VSUP
VOUT (V)
The HAL83x is programmable linear Hall-Effect sensor
which provides an output signal proportional to the
magnetic flux through the Hall plate and proportional to
the supply voltage (ratiometric behavior) as long as the
analog output mode is selected. When the PWM output mode is selected, the PWM signal is not ratiometric
to the supply voltage (for HAL 835 only).
VSUP (V)
8
7
6
5
VSUP
OUT
GND
Fig. 3–1: Programming with VSUP modulation
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers and converted to an output signal. The function
and the parameters for the DSP are explained in
Section 3.2. on page 8.
The setting of the LOCK register disables the programming of the EEPROM memory for all time. It also disables the reading of the memory. This register cannot
be reset.
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 3–1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor generates an normal output signal. After detecting a command, the sensor reads or writes the memory and
answers with a digital signal on the output pin (see
also application note “HAL 8xy, HAL 100x Programmer
Board”). The output is switched off during the communication. Several sensors in parallel to the same supply
and ground line can be programmed individually. The
selection of each sensor is done via its output pin.
For HAL835 the digital output for generation of the
BiPhase-M programming protocol is also used to generate the PWM output signal.
The open-circuit detection function provides a defined
output voltage for the analog output if the VSUP or GND
line are broken. Internal temperature compensation
circuitry and spinning-current offset compensation
enable operation over the full temperature range with
minimal changes in accuracy and high offset stability.
The circuitry also reduces offset shifts due to mechanical stress from the package. The non-volatile memory
consists of redundant and non-redundant EEPROM
cells. The non-redundant EEPROM cells are only used
to store production information inside the sensor. In
addition, the sensor IC is equipped with devices for
overvoltage and reverse-voltage protection at all pins.
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HAL 83x
DATA SHEET
VSUP
Internally
Stabilized
Supply and
Protection
Devices
Switched
Hall Plate
Temperature
Dependent
Bias
Oscillator
A/D
Converter
Digital
Signal
Processing
Open-Circuit,
Overvoltage,
Undervoltage
Detection
D/A
Converter
Analog
Output
50 
Protection
Devices
50 
OUT
EEPROM Memory
Supply
Level
Detection
Digital
Output
Open-Circuit
Detection
Lock Control
GND
Fig. 3–2: HAL83x block diagram
ADC-Readout Register
14 bit
Digital Output
14 bit
Digital Signal Processing
A/D
Converter
TC
TCSQ
5 bit
3 bit
TC Range Select 2 bit
Digital
Filter
Mode Register
Range
Filter
3 bit
2 bit
Other: 8 bit
Multiplier
Sensitivity
14 bit
Adder
VOQ
11 bit
Clamp
low
8 bit
Limiter
Clamp
high
9 bit
D/A
Converter
Lock
Micronas
1 bit
Register
EEPROM Memory
Lock
Control
Fig. 3–3: Details of EEPROM Registers and Digital Signal Processing
Micronas
May 22, 2015; DSH000169_002E
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HAL 83x
DATA SHEET
3.2. Digital Signal Processing and EEPROM
The DSP performs signal conditioning and allows
adaption of the sensor to the customer application.
The parameters for the DSP are stored in the
EEPROM registers. The details are shown in Fig. 3–3.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity:
name of the parameter
The EEPROM registers consist of four groups:
Group 1 contains the registers for the adaptation of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC,
TCSQ and TC-Range for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW
(MIN-OUT), CLAMP-HIGH (MAX-OUT) and OUTPUT
MODE. The output characteristic of the sensor is
defined by these parameters.
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output signal at B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
V OUT
Sensitivity = ----------------B
Group 4 contains the Micronas registers and LOCK for
the locking of all registers. The MICRONAS registers
are programmed and locked during production. These
registers are used for oscillator frequency trimming, A/
D converter offset compensation, and several other
special settings.
An external magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. This value can be read by the A/DREADOUT register to ensure that the suitable converter modulation is achieved. The digital signal is filtered in the internal low-pass filter and manipulated
according to the settings stored in the EEPROM. The
digital value after signal processing is readable in the
D/A-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating
range of the A/D converter is from 15 mT...+15 mT up
to 150 mT...+150 mT.
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent
output voltage level and limited according to the clamping voltage levels. The result is converted to an analog
signal and stabilized by a push-pull output transistor
stage.
The D/A-READOUT at any given magnetic field
depends on the programmed magnetic field range, the
low-pass filter, TC values and CLAMP-LOW and
CLAMP-HIGH. The D/A-READOUT range is min. 0
and max. 16383.
Note: During application design, it should be taken
into consideration that the maximum and minimum D/A-READOUT should not violate the
error band of the operational range.
– The output voltage can be calculated as:
V OUT  Sensitivity  B + V OQ
The output voltage range can be clamped by setting
the registers CLAMP-LOW and CLAMP-HIGH in order
to enable failure detection (such as short-circuits to
VSUP or GND and open connections).
Group 3 contains the general purpose register GP. The
GP Register can be used to store customer information, like a serial number after manufacturing. Micronas
will use this GP REGISTER to store informations like,
Lot number, wafer number, x and y position of the die
on the wafer, etc. This information can be read by the
customer and stored in it’s own data base or it can stay
in the sensor as is.
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HAL 83x
DATA SHEET
MODE register
The MODE register contains all bits used to configure the A/D converter and the different output modes.
Table 3–1: MODE register of HAL830 / HAL835
MODE
Bit Number
9
8
7
6
5
Parameter
RANGE
Reserved
OUTPUTMODE
4
3
FILTER
2
1
0
Reserved
RANGE
(together with
bit 9)
Magnetic Range
Filter
The RANGE bits define the magnetic field range of the
A/D converter.
The FILTER bits define the 3 dB frequency of the digital low-pass filter.
Table 3–2: Magnetic Range HAL 835
Table 3–4: FILTER bits defining the3 dB frequency
3 dB Frequency
MODE [4:3]
MODE [2:1]
80 Hz
00
1
00
500 Hz
10
30 mT
0
00
1 kHz
11
40 mT
1
10
2 kHz
01
60 mT
0
01
80 mT
0
10
Output Format
100 mT
0
11
The OUTPUTMODE bits define the different output
modes of HAL83x.
150 mT
1
11
Magnetic Range
RANGE
MODE
MODE [9]
15 mT
Table 3–5: OUTPUTMODE for HAL835
Table 3–3: Magnetic Range HAL 830
Magnetic Range
RANGE
MODE [9]
MODE [2:1]
30 mT
0
00
40 mT
1
10
60 mT
0
01
80 mT
0
10
100 mT
0
11
150 mT
1
11
Micronas
Output Format
MODE [7:5]
Analog Output (12 bit)
000
Multiplex Analog Output (continuously)
001
Multiplex Analog Output (external
trigger)
011
Burn-In Mode
010
PWM
110
PWM (inverted polarity)
111
Table 3–6: OUTPUTMODE for HAL830
Output Format
MODE [7:5]
Analog Output (12 bit)
000
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HAL 83x
DATA SHEET
In Analog Output mode the sensor provides an ratiometric 12 bit analog output voltage between 0 V and
5 V.
In Multiplex Analog Output mode the sensor delivers
two analog 7-bit values. The LSN (least significant nibble) and MSN of the output value are transmitted separately. This enables the sensor to transmit a 14-bit signal to the 8-bit A/D converter of an ECU with the
advantage of achieving a higher signal-to-noise ratio in
a disturbed environment.
– In external trigger mode the ECU can switch the output of the sensor between LSN and MSN by changing the current flow direction through the sensor’s
output. In case the output is pulled up by a 10 k
resistor, the sensor sends the MSN. If the output is
pulled down, the sensor will send the LSN. Maximum refresh rate is about 500 Hz (2 ms).
– In continuous mode the sensor transmits first LSN
and then MSN continuously and the ECU must listen to the data stream sent by the sensor.
In the Multiplex Analog Output mode 1 LSB is represented by a voltage level change of 39 mV. In Analog
Output mode with14 bit 1 LSB would be 0.31 mV.
In Burn-In Mode the signal path of the sensors DSP is
stimulated internally without applied magnetic field. In
this mode the sensor provides a “saw tooth” shape
output signal. Shape and frequency of the saw tooth
signal depend on the programming of the sensor.
This mode can be used for Burn-In test in the customers production line.
In PWM mode the sensor provides an 11 bit PWM output. The PWM period is 8 ms and the output signal will
change between 0 V and 5 V supply voltage. The magnetic field information is coded in the duty cycle of the
PWM signal. The duty cycle is defined as the ratio
between the high time “s” and the period “d” of the
PWM signal (see Fig. 3–1).
Note: The PWM signal is updated with the rising edge.
If the duty cycle is evaluated with a microcontroller, the trigger-level for the measurement value
should be the falling edge. Please use the rising
edge to measure the PWM period.
For PWM (inverted) the duty-cycle value is then
inverted. Meaning that a 70% duty-cycle in normal
PWM mode is 30% duty-cycle in PWM (inverted)
mode.
Out
Vhigh
d
s
Vlow
Update
time
Fig. 3–1: Definition of PWM signal
TC Register
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaptation is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can
be matched to the magnet and the sensor assembly.
As a result, the output voltage characteristic can be
constant over the full temperature range. The sensor
can compensate for linear temperature coefficients
ranging from about 3100 ppm/K up to 1000 ppm/K
and quadratic coefficients from about -7 ppm/K² to
2 ppm/K².
The full TC range is separated in the following four TC
range groups (see Table 3–7 and Table 5–1 on
page 27).
Table 3–7: TC-Range Groups
TC-Range [ppm/k]
TC-Range Group
(see also Table 5–1
on page 27)
3100 to 1800
0
1750 to 550
2
500 to +450 (default value)
1
+450 to +1000
3
TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example
0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ =
1. Please refer to Section 5.3. for more details.
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HAL 83x
DATA SHEET
Sensitivity
GP Register
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. The Sensitivity is programmable between 4 and 4. For VSUP = 5 V, the register can
be changed in steps of 0.00049.
This register can be used to store some information,
like production date or customer serial number.
Micronas will store production Lot number, wafer number and x,y coordinates in registers GP1 to GP3. The
total register contains of four blocks with a length of 13
bit each.The customer can read out this information
and store it in his production data base for reference or
he can store own production information instead.
For all calculations, the digital value from the magnetic
field of the D/A converter is used. This digital information is readable from the D/A-READOUT register.
V OUT  16383
SENSITIVITY = --------------------------------------------------------------  Sens INITIAL
 DA – Readout  V DD 
Note: This register is not a guarantee for traceability.
To read/write this register it is mandatory to
read/write all GP register one after the other
starting with GP0. In case of writing the registers it is necessary to first write all registers followed by one store sequence at the end. Even if
only GP0 should be changed all other GP registers must first be read and the read out data
must be written again to these registers.
VOQ
The VOQ register contains the parameter for the adder
in the DSP. VOQ is the output signal without external
magnetic field (B = 0 mT) and programmable from
VSUP (100% duty-cycle) up to VSUP (100% dutycycle). For VSUP = 5 V, the register can be changed in
steps of 4.9 mV (0.05% duty-cycle).
Note: If VOQ is programmed to a negative value, the
maximum output signal is limited to:
LOCK
By setting the 1-bit register all registers will be locked
and the sensor will no longer respond to any supply
voltage modulation. This bit is active after the first
power-off and power-on sequence after setting the
LOCK bit.
V OUTmax = V OQ + V SUP
Warning: This register cannot be reset!
Clamping Levels
The output signal range can be clamped in order to
detect failures like shorts to VSUP or GND or an open
circuit.
The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping limit is programmable between 0 V (min. duty-cycle) and VSUP/2 (50%
duty-cycle). For VSUP = 5 V, the register can be
changed in steps of 9.77 mV (0.195% duty-cycle).
The CLAMP-HIGH register contains the parameter for
the upper limit. The upper clamping voltage is programmable between 0 V (min. duty-cycle) and VSUP
(max. duty-cycle). For VSUP = 5 V, in steps of 9.77 mV
(0.195% duty-cycle).
Micronas
D/A-READOUT
This 14-bit register delivers the actual digital value of
the applied magnetic field after the signal processing.
This register can be read out and is the basis for the
calibration procedure of the sensor in the system environment.
Note: The MSB and LSB are reversed compared with
all the other registers. Please reverse this register after readout.
Note: HAL835: During calibration it is mandatory to
select the Analog Output as output format. The
D/A-Readout register can be read out only in the
Analog Output mode. For all other modes the
result read back from the sensor will be a 0.
After the calibration the output format can than
easily be switched to the wanted output mode,
like PWM.
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HAL 83x
DATA SHEET
3.3. Calibration Procedure
Step 2: Initialize DSP
3.3.1. General Procedure
As the D/A-READOUT register value depends on
the settings of SENSITIVITY, VOQ and CLAMPLOW/HIGH, these registers have to be initialized
with defined values, first:
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for generation of the serial telegram for programming (Programmer Board Version 5.1) and the
corresponding software (PC83x) for the input of the
register values.
For the individual calibration of each sensor in the customer application, a two point adjustment is recommended. The calibration shall be done as follows:
– VOQINITIAL = 2.5 V
– Clamp-Low = 0 V
– Clamp-High = 4.999 V
– SensINITIAL (see table 3-1.)
Table 3–1:
Step 1: Input of the registers which need not be
adjusted individually
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, the
output mode and the GP register value are given for
this application. Therefore, the values of the following
register blocks should be identical for all sensors of the
customer application.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the
sensor position)
3dB Filter frequency
SensINITIAL
80 Hz
0.6
500 Hz
0.39
1 kHz
0.42
2 kHz
0.83
Step 3: Define Calibration Points
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for VOUT1
and VOUT2 result from the application requirements.
– OUTPUTMODE
– TC, TCSQ and TC-RANGE
(depends on the material of the magnet and the
other temperature dependencies of the application)
– GP
(if the customer wants to store own production information. It is not necessary to change this register)
As the clamping levels are given. They have an influence on the D/A-Readout value and have to be set
therefore after the adjustment process.
Lowclampingvoltage  V OUT1,2  Highclampingvoltage
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.
Write the appropriate settings into the HAL83x registers.
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HAL 83x
DATA SHEET
Step 4: Calculation of VOQ and Sensitivity
Step 5: Locking the Sensor
Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/AREADOUT1.
The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK
function becomes effective after power-down and
power-up of the Hall IC. The sensor is now locked and
does not respond to any programming or reading commands.
Now, set the system to calibration point 2, read the
register D/A-READOUT again, and get the value D/AREADOUT2.
With these values and the target values VOUT1 and
VOUT2, for the calibration points 1 and 2, respectively,
the values for Sensitivity and VOQ are calculated as:
Warning: This register can not be reset!
Sensitivity = Sens INITIAL 
 Vout2 – Vout1 
--------------------------------------------------------------------------------  16384
-------------- D/A-Readout2 – D/A-Readout1 
5
1
 16384V OQ = ------  Vout2
-----------------------------------–
16
5
1
 D/A-Readout2 – 8192   Sensitivity  ----------------------------Sens INITIAL
5
 -----------1024
This calculation has to be done individually for each
sensor.
Next, write the calculated values for Sensitivity and
VOQ into the IC for adjusting the sensor. At that time it
is also possible to store the application specific values
for Clamp-Low and Clamp-High into the sensors
EEPROM.The sensor is now calibrated for the customer application. However, the programming can be
changed again and again if necessary.
Note: For a recalibration, the calibration procedure
has to be started at the beginning (step 1). A
new initialization is necessary, as the initial values from step 1 are overwritten in step 4.
Micronas
May 22, 2015; DSH000169_002E
13
HAL 83x
DATA SHEET
4. Specifications
4.1. Outline Dimensions
A2
E1
Bd
A3
A4
F1
D1
y
Center of sensitive area
F3
F2
3
L1
2
L
1
e
c
Θ
b
physical dimensions do not include moldflash.
2.5
0
solderability is guaranteed between end of pin and distance F1.
5 mm
scale
Sn-thickness might be reduced by mechanical handling.
A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet.
min/max of D1 are specified in the datasheet.
UNIT
A2
A3
b
c
D1
e
E1
F1
F2
F3
L
L1
Θ
mm
1.55
1.45
0.7
0.42
0.36
4.05
2.54
4.11
4.01
1.2
0.8
0.60
0.42
4.0
2.0
14.5
min
14.0
min
45°
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
-
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
10-04-29
06609.0001.4
ZG001009_Ver.07
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–1:
TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
14
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
A2
E1
Bd
A3
A4
F1
D1
y
Center of sensitive area
1
2
3
L
F2
e
b
Θ
c
physical dimensions do not include moldflash.
0
solderability is guaranteed between end of pin and distance F1.
2.5
5 mm
scale
Sn-thickness might be reduced by mechanical handling.
A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet.
min/max of D1 are specified in the datasheet.
UNIT
A2
A3
b
c
D1
e
E1
F1
F2
L
Θ
mm
1.55
1.45
0.7
0.42
0.36
4.05
1.27
4.11
4.01
1.2
0.8
0.60
0.42
14.5
min
45°
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
-
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
15-01-09
06615.0001.4 Bl. 1
ZG001015_Ver.08
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–2:
TO92UT-2 Plastic Transistor Standard UT package, 3 pins
Weight approximately 0.12 g
Micronas
May 22, 2015; DSH000169_002E
15
HAL 83x
DATA SHEET
Δh
Δp
Δh
W2
B
W0
W
W1
H
A
L
H1
Δp
D0
P2
F1
feed direction
P0
F2
T1
T
view A-B
H1= this dimension is different for each sensor type and is specified in the data sheet
UNIT
D0
F1
F2
H
Δh
L
P0
P2
Δp
T
T1
W
W0
W1
W2
mm
4.0
2.74
2.34
2.74
2.34
20.0
18.0
±1.0
11.0
max
13.2
12.2
7.05
5.65
±1.0
0.5
0.9
18.0
6.0
9.0
0.3
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
ICE 60286-2
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
15-01-09
06632.0001.4 Bl. 1
ZG001032_Ver.05
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–3:
TO92UA/UT: Dimensions ammopack inline, spread
16
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
Δh
Δp
Δh
W2
B
W0
W
W1
H
A
L
H1
Δp
D0
P2
F1
feed direction
P0
F2
T1
T
view A-B
H1= this dimension is different for each sensor type and is specified in the data sheet
UNIT
D0
F1
F2
H
Δh
L
P0
P2
Δp
T
T1
W
W0
W1
W2
mm
4.0
1.47
1.07
1.47
1.07
20.0
18.0
±1.0
11.0
max
13.2
12.2
7.05
5.65
±1.0
0.5
0.9
18.0
6.0
9.0
0.3
STANDARD
ANSI
ISSUE
ITEM NO.
-
IEC 60286-2
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
15-01-09
06631.0001.4 Bl. 1
ZG001031_Ver.04
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–4:
TO92UA/UT: Dimensions ammopack inline, not spread
Micronas
May 22, 2015; DSH000169_002E
17
HAL 83x
DATA SHEET
4.2. Soldering, Welding and Assembly
Information related to solderability, welding, assembly, and second-level packaging is included in the document
“Guidelines for the Assembly of Micronas Packages”. It is available on the Micronas website or on the service portal.
4.3. Pin Connections and Short Descriptions
Pin
No.
Pin Name
Type
Short Description
1
VSUP
SUPPLY
Supply Voltage and
Programming Pin
2
GND
GND
Ground
3
OUT
I/O
Push-Pull Output
and Selection Pin
1
VSUP
OUT
3
2
GND
Fig. 4–5: Pin configuration
4.4. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
4.5. Physical Dimensions
TO92UT-2
A4
0.3 mm nominal
Bd
0.3 mm
D1
4.05 mm ± 0.05 mm
H1
min. 22.0 mm
max. 24.1 mm
y
1.5 mm nominal
18
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
4.6. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
Condition
VSUP
Supply Voltage
1
8.5
8.5
V
t < 96 h3)
VSUP
Supply Voltage
1
16
16
V
t < 1 h3)
VOUT
Output Voltage
3
5
16
V
VOUT  VSUP
Excess of Output Voltage
over Supply Voltage
3,1

2
V
IOUT
Continuous Output Current
3
10
10
mA
tSh
Output Short Circuit Duration
3

10
min
VESD
ESD Protection1)
1
3
8
7.5
8
7.5
kV
TJ
Junction Temperature under
bias2)
50
190
°C
1)
2)
3)
AEC-Q100-002 (100 pF and 1.5 k)
For 96 h - Please contact Micronas for other temperature requirements
No cumulated stress
Micronas
May 22, 2015; DSH000169_002E
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HAL 83x
DATA SHEET
4.6.1. Storage and Shelf Life
Information related to storage conditions of Micronas sensors is included in the document “Guidelines for the
Assembly of Micronas Packages”. It gives recommendations linked to moisture sensitivity level and long-term storage. It is available on the Micronas website or on the service portal.
4.7. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VSUP
Supply Voltage
1
4.5
12.4
5
12.5
5.5
12.6
V
Condition
During programming
IOUT
Continuous Output Current
3
1.2

1.2
mA
RL
Load Resistor
3
4.5
10

k
Can be pull-up or pulldown resistor
CL
Load Capacitance
3
0
100
1000
nF
Analog output only
NPRG
Number of EEPROM
Programming Cycles



100
cycles
0°C < Tamb < 55°C
TJ
Junction Temperature
Range1)

40
40
40



125
150
170
°C
°C
°C
for 8000 h2)
for 2000 h2)
for 1000 h2)
1)
Depends on the
2) Time values are
20
temperature profile of the application. Please contact Micronas for life time calculations.
not cumulative
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
4.8. Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended
Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
ISUP
Supply Current
over Temperature Range
1
5
7
10
mA
ES
Error in Magnetic Sensitivity over
Temperature Range5)
3
4
1
0
0
4
1
%
Conditions
HAL830
HAL835
VSUP = 5 V; 60 mT range, 3db
frequency = 500 Hz, TC & TCSQ for
linearized temperature coefficients
(see Section 4.8.1. on page 23)
Analog Output (HAL830 & HAL835)
DNL
Resolution
3

12

bit
ratiometric to VSUP 1)
Differential Non-Linearity of D/A
converter2)
3
2.0
1.5
0
0
2.0
1.5
LSB
HAL830
HAL835
Only @ 25°C ambient temperature
INL
0.5
0
0.5
%
% of supply voltage3)
Non-Linearity of Output Voltage
over Temperature
3
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VSUP)
3
0.25
0
0.25
%
VOUT1 - VOUT2> 2 V
during calibration procedure
VOffset
Offset Drift over Temperature
Range
VOUT(B = 0 mT)25°C- VOUT(B = 0
mT)max5)
3
0.6
0.2
0.25
0.1
0.6
0.2
% VSUP
HAL830
HAL835
For VOUT = 0.35 V ... 4.65 V;
VSUP = 5 V, Sensitivity 0.95
VSUP = 5 V; 60 mT range,
3dB frequency = 500 Hz, TC = 15,
TCSQ = 1, TC-Range = 1
0.65 < sensitivity < 0.65
VOUTCL
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
3
15
0
15
mV
VOUTCH
Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
3
15
0
15
mV
RL = 5 k, VSUP = 5 V
Spec values are derived from
resolutions of the registers ClampLow/Clamp-High and the parameter
Voffset
VOUTH
Upper Limit of Signal Band4)
3
4.65
4.8

V
VSUP = 5 V, 1 mA IOUT 1mA
VOUTL
Lower Limit of Signal Band4)
3

0.2
0.35
V
VSUP = 5 V, 1 mA IOUT 1mA
ROUT
Output Resistance over
Recommended Operating Range
3

1
10

VOUTLmax VOUT VOUTHmin
tr(O)
Step Response Time of Output6)
3

3.0
1.5
1.1
0.9

ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
CL = 10 nF, time to 90% of final
output voltage for a steplike
signal Bstep from 0 mT to Bmax
tPOD
Power-Up Time (Time to reach
stable Output Voltage)

1.5
1.7
1.9
ms
CL = 10 nF, 90% of VOUT
1)
2)
3)
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096
Only tested at 25°C. The specified values are test limits only. Overmolding and packaging might influence this parameter
If more than 50% of the selected magnetic field range is used (Sensitivity 0.5) and the temperature compensation is suitable.
INL = VOUT  VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature.
4)
Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH
5)
Tambient = 150°C
6)
Guaranteed by design
Micronas
May 22, 2015; DSH000169_002E
21
HAL 83x
DATA SHEET
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
BW
Small Signal Bandwidth (3 dB)
3

2

kHz
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
VOUTn
Noise Output VoltageRMS
3

1
5
mV
magnetic range = 60 mT
3 dB Filter frequency = 500 Hz
Sensitivity  0.7; C = 4.7 nF (VSUP &
VOUT to GND)
DACGE
D/A-Converter Glitch Energy
3

40

nV
7)
Resolution
3

11

bit
DCMINDUTY
Accuracy of Duty Cycle at Clamp
Low over Temperature Range
3
0.3
0
0.3
%
DCMAXDUTY
Accuracy of Duty Cycle at Clamp
High over Temperature Range
3
0.3
0
0.3
%
Spec values are derived from
resolutions of the registers ClampLow/Clamp-High and the parameter
DCOQoffset
VOUTH
Output High Voltage
3

4.8

V
VSUP = 5 V, 1 mA IOUT 1mA
VOUTL
Output Low Voltage
3

0.2

V
VSUP = 5 V, 1 mA IOUT 1mA
fPWM
PWM Output Frequency over
Temperature Range
3
105
125
145
Hz
tPOD
Power-Up Time (Time to reach
valid Duty Cycle)
3


8.5
ms
tr(O)
Step Response Time of Output
3

3
0,9
0,6
0,4

1,2
0.8
0,5
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 1 kHz
3 dB Filter frequency = 2kHz
Time to 90% of final output voltage
for a steplike signal Bstep from 0 mT
to Bmax
PWM Output (HAL835 only)
TO92UT Packages

Thermal Resistance
Rthja
junction to air



235
K/W
Measured with a 1s0p board
Rthjc
junction to case



61
K/W
Measured with a 1s0p board
7) The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state. This energy is normally
specified as the area of the glitch in nVs.
22
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
4.8.1. Definition of sensitivity error ES
ES is the maximum of the absolute value of the quotient of the normalized measured value1 over the normalized
ideal linear2 value minus 1:
ES = max  abs  meas
------------- – 1 

 ideal  
{Tmin, Tmax}
In the example below, the maximum error occurs at 10°C:
ES = 1.001
------------- – 1 = 0.8%
0.993
1:
2
normalized to achieve a least-squares method straight line that has a value of 1 at 25°C
: normalized to achieve a value of 1 at 25°C
ideal 200 ppm/k
1.03
relative sensitivity related to 25 °C value
least-squares method straight line
of normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-squares
method straight line at 25 °C
1.02
1.01
1.001
1.00
0.992
0.99
0.98
-50
-25
-10
0
25
50
75 100
temperature [°C]
125
150
175
Fig. 4–6: ES definition example
Micronas
May 22, 2015; DSH000169_002E
23
HAL 83x
DATA SHEET
4.8.2. Power-On Operation
at TJ = 40 °C to +170 °C, after programming and locking. Typical Characteristics for TJ = 25 °C.
Symbol
Parameter
Min.
Typ.
Max.
Unit
PORUP
Power-On Reset Voltage (UP)

3.4

V
PORDOWN
Power-On Reset Voltage (DOWN)

3.0

V
 97%VSUP
Vout [V]
 97%VSUP
 97%VSUP
Ratiometric Output
3.5 V
VSUP,UV
5
VSUP,OV
VSUP [V]
: Output Voltage undefined
VSUP,UV = Undervoltage Detection Level
VSUP,OV = Overvoltage Detection Level
Fig. 4–7: Analog output behavior for different supply voltages
VSUP
First PWM starts
5V
4.2 V
VSUP,UVmin.
time
tPOD
VOUT
Output undefined
The first period contains
no valid data
No valid signal
time
Valid signal
Fig. 4–8: Power-up behavior of HAL835 with PWM output activated
24
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
4.9. Diagnostics and Safety Features
4.9.1. Overvoltage and Undervoltage Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VSUP,UV
Undervoltage detection level
1

4.2
4.5
V
1)2)
VSUP,OV
Overvoltage detection level
1
8.5
8.9
10.0
V
1)2)
1)
If the supply voltage drops below VSUP,UV or rises above VSUP,OV, the output voltage is switched to VSUP (97% of VSUP at RL = 10 k to
GND).
2)
If the PWM output of HAL835 is activated, then the output signal will follow VSUP and PWM signal is switched off
Note: The over- and undervoltage detection is activated only after locking the sensor!
4.9.2. Open-Circuit Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Comment
VOUT
Output voltage at open
VSUP line
3
0
0
0.15
V
VSUP = 5 V
RL = 10 kto 200k
0
0
0.2
V
VSUP = 5 V
5 kRL < 10 k
0
0
0.25
V
VSUP = 5 V
4.5 kRL < 10 k1)
4.85
4.9
5.0
V
VSUP = 5 V
RL = 10 kto 200k
4.8
4.9
5.0
V
VSUP = 5 V
5 kRL < 10 k
4.75
4.9
5.0
V
VSUP = 5 V
4.5 kRL < 10 k1)
VOUT
Output voltage at open
GND line
3
1)
Not tested
Note: In case that the PWM output mode is used the sensor will stop transmission of the PWM signal if VSUP or
GND lines are broken and VOUT will be according to above table.
4.9.3. Overtemperature and Short-Circuit Protection
If overtemperature >180 °C or a short-circuit occurs,
the output will go into tri-state condition.
4.9.5. ADC Diagnostic
The A/D-READOUT register can be used to avoid
under/overrange effects in the A/D converter.
4.9.4. EEPROM Redundancy
The non-volatile memory uses the Micronas Fail Safe
Redundant Cell technology well proven in automotive
applications.
Micronas
May 22, 2015; DSH000169_002E
25
HAL 83x
DATA SHEET
5.2. Use of two HAL83x in Parallel
(for analog output mode only)
5. Application Notes
5.1. Application Circuit (for analog output mode only)
For EMC protection, it is recommended to connect one
ceramic 100 nF capacitor each between ground and
the supply voltage, respectively the output voltage pin.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VSUP line at this time must be able to resist this voltage.
Two different HAL83x sensors which are operated in
parallel to the same supply and ground line can be programmed individually. In order to select the IC which
should be programmed, both Hall ICs are inactivated
by the “Deactivate” command on the common supply
line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only the activated sensor will
react to all following read, write, and program commands. If the second IC has to be programmed, the
“Deactivate” command is sent again, and the second
IC can be selected.
VSUP
Note: The multi-programming of two sensors requires
a 10 k pull-down resistor on the sensors output
pins.
OUT
HAL83x
100 nF
VSUP
100 nF
GND
OUT A & Select A
Fig. 5–1: Recommended application circuit (analog
output signal)
100 nF
HAL83x
Sensor A
100 nF
HAL83x
Sensor B
OUT B & Select B
100 nF
GND
Fig. 5–2: Recommended Application circuit (parallel
operation of two HAL83x)
26
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
Table 5–1: Temperature Compensation
5.3. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC, TCSQ and
TC-Range codes for linear compensation is given in
the following table. In addition to the linear change of
the magnetic field with temperature, the curvature can
be adjusted as well. For this purpose, other TC, TCSQ
and TC-Range combinations are required which are
not shown in the table. Please contact Micronas for
more detailed information on this higher order
temperature compensation.
Table 5–1: Temperature Compensation
TCSQ
TC-Range
Group
TC
TCSQ
1200
2
12
5
1300
2
12
0
1400
2
8
3
1500
2
4
7
1600
2
4
1
1700
2
0
6
1800
0
31
6
1900
0
28
7
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
Group
1075
3
31
7
2000
0
28
2
1000
3
28
1
2100
0
24
6
900
3
24
0
2200
0
24
1
750
3
16
2
2400
0
20
0
675
3
12
2
2500
0
16
5
575
3
8
2
2600
0
14
5
450
3
4
2
2800
0
12
1
400
1
31
0
2900
0
8
6
250
1
24
1
3000
0
8
3
150
1
20
1
3100
0
4
7
50
1
16
2
3300
0
4
1
0
1
15
1
3500
0
0
4
100
1
12
0
200
1
8
1
300
1
4
4
400
1
0
7
500
1
0
0
600
2
31
2
700
2
28
1
800
2
24
3
900
2
20
6
1000
2
16
7
1100
2
16
2
Micronas
TC
Temperature
Coefficient of
Magnet (ppm/K)
Note: The above table shows only some approximate
values. Micronas recommends to use the TCCalc software to find optimal settings for temperature coefficients. Please contact Micronas for
more detailed information.
May 22, 2015; DSH000169_002E
27
HAL 83x
DATA SHEET
5.4. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + T
At static conditions and continuous operation, the following equation applies:
T = ISUP * VSUP * RthjX
The X represents junction-to-air or junction-to-case.
In order to estimate the temperature difference T
between the junction and the respective reference
(e.g. air, case, or solder point) use the max. parameters for ISUP, RthX, and the max. value for VSUP from
the application.
The following example shows the result for junction-to air conditions. VSUP = 5.5 V, Rthja = 250 K/W and
ISUP = 10 mA the temperature difference T = 13.75 K.
The junction temperature TJ is specified. The maximum ambient temperature TAmax can be estimated as:
TAmax = TJmax T
5.5. EMC and ESD
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
28
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
6. Programming
tr
tf
VSUPH
6.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a
serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VSUP-line and the output. The bit time for the
VSUP-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
tp0
logical 0
tp0
or
VSUPL
tp1
VSUPH
tp0
logical 1
VSUPL
or
tp0
tp1
Fig. 6–1: Definition of logical 0 and 1 bit
6.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 6–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
– Read a register (see Fig. 6–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 6–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 6–5)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors have to be pulled
to ground. With an Activate pulse on the appropriate
output pin, an individual sensor can be selected. All
following commands will only be accepted from the
activated sensor.
Micronas
May 22, 2015; DSH000169_002E
29
HAL 83x
DATA SHEET
Table 6–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
Remarks
VSUPL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VSUPH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise time
1


0.05
ms
see Fig. 6–1 on page 29
tf
Fall time
1


0.05
ms
see Fig. 6–1 on page 29
tp0
Bit time on VSUP
1
1.7
1.75
1.9
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Duty-Cycle Change for logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VSUPPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise time of programming voltage
1
0.2
0.5
1
ms
see Fig. 6–1 on page 29
tfp
Fall time of programming voltage
1
0

1
ms
see Fig. 6–1 on page 29
tw
Delay time of programming voltage after
Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate pulse
3
3
4
5
V
tact
Duration of an Activate pulse
3
0.05
0.1
0.2
ms
Vout,deact
Output voltage after deactivate command
3
0
0.1
0.2
V
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VSUP
Acknowledge
VOUT
Fig. 6–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
DAT
DP
VOUT
Fig. 6–3: Telegram for coding a Read command
30
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
tPROG
trp
tfp
VSUPPROG
ERASE, PROM, and LOCK
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
VOUT
tw
Fig. 6–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 6–5: Activate pulse
Address Parity Bit (AP)
6.3. Telegram Codes
This parity bit is “1” if the number of zeros within the 4
Address bits is uneven. The parity bit is “0” if the number of zeros is even.
Sync Bit
Data Bits (DAT)
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The 14 Data Bits contain the register information.
Command Bits (COM)
The registers use different number formats for the Data
Bits. These formats are explained in Section 6.4.
The Command code contains 3 bits and is a binary
number. Table 6–2 shows the available commands and
the corresponding codes for the HAL83x.
In the Write command, the last bits are valid. If, for
example, the TC register (10 bits) is written, only the
last 10 bits are valid.
Command Parity Bit (CP)
In the Read command, the first bits are valid. If, for
example, the TC register (10 bits) is read, only the first
10 bits are valid.
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Address Bits (ADR)
The Address code contains 4 bits and is a binary number. Table 6–3 shows the available addresses for the
HAL83x registers.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Micronas
May 22, 2015; DSH000169_002E
31
HAL 83x
DATA SHEET
Table 6–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all non-volatile registers
ERASE
5
erase all non-volatile registers
6.4. Number Formats
6.5. Register Information
Binary number:
CLAMP-LOW
The most significant bit is given as first, the least
significant bit as last digit.
– The register range is from 0 up to 255.
– The register value is calculated by:
Example: 101001 represents 41 decimal.
LowClampingVoltage  2
CLAMP-LOW = ---------------------------------------------------------------  255
V SUP
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
0101001 represents +41 decimal
1101001 represents 41 decimal
CLAMP-HIGH
– The register range is from 0 up to 511.
– The register value is calculated by:
Two’s-complement number:
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example:
0101001 represents +41 decimal
1010111 represents 41 decimal
HighClampingVoltage
CLAMP-HIGH = ------------------------------------------------------  511
V SUP
VOQ
– The register range is from 1024 up to 1023.
– The register value is calculated by:
V OQ
VOQ = -------------  1024
V SUP
SENSITIVITY
– The register range is from 8192 up to 8191.
– The register value is calculated by:
SENSITIVITY = Sensitivity  2048
32
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
TC
D/A-READOUT
– The TC register range is from 0 up to 1023.
– This register is read only.
– The register value is calculated by:
– The register range is from 0 up to 16383.
TC = GROUP  256 + TCValue  8 + TCSQValue
DEACTIVATE
– This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
MODE
– The register range is from 0 up to 1023 and contains
the settings for FILTER, RANGE, OUTPUTMODE:
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
MODE = RANGE  Mode  9    512 +
OUTPUTMODE  32 +
FILTER  8 + RANGE  Mode  2:1    2
Table 6–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
CLAMP-LOW
1
8
binary
read/write/program
Low clamping voltage
CLAMP-HIGH
2
9
binary
read/write/program
High clamping voltage
VOQ
3
11
two’s compl. binary
read/write/program
Output quiescent voltage
SENSITIVITY
4
14
signed binary
read/write/program
MODE
5
10
binary
read/write/program
Range, filter, output mode
LOCKR
6
2
binary
read/write/program
Lock Bit
A/D READOUT
7
14
two’s compl. binary
read
GP REGISTERS 1...3
8
3x13
binary
read/write/program
1)
D/A-READOUT
9
14
binary
read
Bit sequence is reversed
during read
TC
11
10
binary
read/write/program
bits 0 to 2 TCSQ
bits 3 to 7 TC
bits 8 to 9 TC Range
GP REGISTER 0
12
13
binary
read/write/program
1)
DEACTIVATE
15
12
binary
write
Deactivate the sensor
1)
To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In
case of a writing the registers it is necessary to first write all registers followed by one store sequence at the end.
Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written
again to these registers.
Micronas
May 22, 2015; DSH000169_002E
33
HAL 83x
DATA SHEET
6.6. Programming Information
Table 6–4: Data formats
Char
DAT3
DAT2
DAT1
DAT0
Register
Bit
15
14
13
12
11
10
09
08
07
06
05
04
03
02
01
00
CLAMP LOW
Write
Read





V

V

V

V

V

V
V
V
V
V
V

V

V

V

V

V

CLAMP HIGH
Write
Read





V

V

V

V

V
V
V
V
V
V
V
V
V
V

V

V

V

V

VOQ
Write
Read





V

V

V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

V

V

SENSITIVITY
Write
Read




V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MODE
Write
Read





V

V

V

V
V
V
V
V
V
V
V
V
V
V
V
V
V

V

V

V

LOCKR
Write
Read







V






















V

GP 1...3
Registers
Write
Read





V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

D/AREADOUT1)
Read


V
V
V
V
V
V
V
V
V
V
V
V
V
V
TC
Write
Read





V

V

V

V
V
V
V
V
V
V
V
V
V
V
V
V
V

V

V

V

GP 0
Register
Write
Read





V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

DEACTIVATE
Write




1
0
0
0
0
0
0
0
1
1
1
1
V: valid, : ignore, bit order: MSB first
1)
LSB first
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands must be zero.
ERASE and PROM act on all registers in parallel.
If all HAL83x registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
34
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
Note: For production and qualification tests it is mandatory to set the LOCK bit after final adjustment
and programming of HAL83x. The LOCK function is active after the next power-up of the sensor.
The success of the lock process must be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
May 22, 2015; DSH000169_002E
Micronas
HAL 83x
DATA SHEET
7. Data Sheet History
1. Advance Information: ”HAL 83x Robust Mutlti-Purpose Programmable Linear Hall-Effect Sensor Family”, Jan. 13, 2013, AI000169_001EN. First release
of the Advance Information.
2. Preliminary Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”, Aug. 2, 2013, PD000213_001EN. First release
of the preliminary data sheet.
Major Changes:
– Absolute Maximum Ratings: Values for VESD
– Characteristics: Values for VOffset
3. Preliminary Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”, Oct. 2, 2014, PD000213_002EN. Second
release of the preliminary data sheet.
Major Changes:
– TO92 UT package drawing updated
– TO92 UT package spread legs option deleted
– Recommended operating conditions and characteristics:
• Updated DNL value for HAL 835
• Updated RLmin (load resistor)
– Diagnostics and safety features updated
– Offset correction feature for HAL 835 removed
4. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
Feb. 25, 2015, DSH000169_001E. First release of
the data sheet.
Major Changes:
– Step Response Times
5. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”,
May 22, 2015, DSH000169_002E. Second release
of the data sheet.
Changes:
– Package TO92UT-1 (spread) added
– Package drawing TO92UT-2 (non-spread) updated
– Ammopack drawings updated
– Assembly and storage information
– Several text corrections
Micronas GmbH
Hans-Bunte-Strasse 19  D-79108 Freiburg  P.O. Box 840  D-79008 Freiburg, Germany
Tel. +49-761-517-0  Fax +49-761-517-2174  E-mail: [email protected]  Internet: www.micronas.com
35
May 22, 2015; DSH000169_002E
Micronas