Hardware Documentation D at a S h e e t ® HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family Edition May 22, 2015 DSH000169_002EN HAL 83x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. Micronas Trademarks – HAL Micronas Patents EP0 953 848, EP 1 039 357, EP 1 575 013 Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers’ technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document’s content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, military, aviation, or aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas’ products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET Contents Page Section Title 4 4 4 4 1. 1.1. 1.2. 1.2.1. Introduction Applications General Features Device-specific features of HAL835 5 5 2. 2.1. Ordering Information Device-Specific Ordering Codes 6 6 8 12 12 3. 3.1. 3.2. 3.3. 3.3.1. Functional Description General Function Digital Signal Processing and EEPROM Calibration Procedure General Procedure 14 14 18 18 18 18 19 20 20 21 23 24 25 25 25 25 25 25 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 4.6.1. 4.7. 4.8. 4.8.1. 4.8.2. 4.9. 4.9.1. 4.9.2. 4.9.3. 4.9.4. 4.9.5. Specifications Outline Dimensions Soldering, Welding and Assembly Pin Connections and Short Descriptions Dimensions of Sensitive Area Physical Dimensions Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Definition of sensitivity error ES Power-On Operation Diagnostics and Safety Features Overvoltage and Undervoltage Detection Open-Circuit Detection Overtemperature and Short-Circuit Protection EEPROM Redundancy ADC Diagnostic 26 26 26 5. 5.1. 5.2. 27 28 28 5.3. 5.4. 5.5. Application Notes Application Circuit (for analog output mode only) Use of two HAL83x in Parallel (for analog output mode only) Temperature Compensation Ambient Temperature EMC and ESD 29 29 29 31 32 32 34 6. 6.1. 6.2. 6.3. 6.4. 6.5. 6.6. Programming Definition of Programming Pulses Definition of the Telegram Telegram Codes Number Formats Register Information Programming Information 35 7. Data Sheet History 3 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET Robust Multi-Purpose Programmable Linear HallEffect Sensor Family Release Note: Revision bars indicate significant changes to the previous edition. The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V supply voltage in the ambient temperature range from 40 °C up to 160 °C. The HAL 83x is available in the very small leaded package TO92UT-2 and is AECQ 100 qualified. 1. Introduction The HAL83x are new members of the Micronas family of programmable linear Hall sensors. This robust multipurpose family can replace the HAL 805, HAL 815, HAL 825, and HAL810. It offers better quality, extended functionality and performance compared to the first generation devices. This new family consists of two members: the HAL830 and the HAL835. HAL835 is the device with the full feature set and maximum performance compared with the HAL830. 1.1. Applications The HAL83x is an universal magnetic field sensor with linear output based on the Hall effect. The IC can be used for angle or distance measurements when combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programmable in a nonvolatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage. It is possible to program several devices connected to the same supply and ground line. – high-precision linear Hall-effect sensor family with 12 bit ratiometric analog output and digital signal processing The HAL83x features a temperature-compensated Hall plate with spinning-current offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redundancy and lock function for the calibration data, an EEPROM for customer serial number, a serial interface for programming the EEPROM, and protection devices at all pins. The HAL83x is programmable by modulating the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet, and the mechanical positioning can be compensated in the final assembly. Due to the sensor’s versatile programming characteristics and low temperature drift, the HAL 83x is the optimal system solution for applications such as: – Pedal, turbo-charger, throttle and EGR systems – Distance measurements 1.2. General Features – multiple programmable magnetic characteristics in a non-volatile memory (EEPROM) with redundancy and lock function – operates from TJ = 40 °C up to 170 °C – operates from 4.5 V up to 5.5 V supply voltage in specification and functions up to 8.5 V – operates with static magnetic fields and dynamic magnetic fields up to 2 kHz – programmable magnetic field range from 30 mT up to 150 mT – open-circuit (ground and supply line break detection) with 5 k pull-up and pull-down resistor, overvoltage and undervoltage detection – for programming an individual sensor within several sensors in parallel to the same supply voltage, a selection can be done via the output pin – temperature characteristics are programmable for matching common magnetic materials – programmable clamping function – programming via modulation of the supply voltage – overvoltage and reverse-voltage protection at all pins – magnetic characteristics extremely robust against mechanical stress In addition, the temperature compensation of the Hall IC can be fit to common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. – short-circuit protected push-pull output The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. – selectable PWM output with 11 bit resolution and 8 ms period 4 – EMC and ESD optimized design 1.2.1. Device-specific features of HAL835 – very low offset and sensitivity drift over temperature – 14 bit multiplex analog output – 15 mT magnetic range May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 2. Ordering Information Table 2–2: Available temperature ranges A Micronas device is available in a variety of delivery forms. They are distinguished by a specific ordering code: Temperature Code (T) Temperature Range A TJ = 40 °C to +170 °C XXX NNNN PA-T-C-P-Q-SP Further Code Elements Temperature Range Package The relationship between ambient temperature (TA) and junction temperature (TJ) is explained in Section 5.4. on page 28. Product Type Product Group Fig. 2–1: Ordering Code Principle For a detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes, Packaging, Handling”. For available variants for Configuration (C), Packaging (P), Quantity (Q), and Special Procedure (SP) please contact Micronas. Table 2–3: Available ordering codes and corresponding package marking 2.1. Device-Specific Ordering Codes The HAL 83x is available in the following package and temperature variants. Table 2–1: Available packages Package Code (PA) Package Type UT TO92UT-1/2 Micronas Available Ordering Codes Package Marking HAL830UT-A-[C-P-Q-SP] 830A HAL835UT-A-[C-P-Q-SP] 835A May 22, 2015; DSH000169_002E 5 HAL 83x DATA SHEET 3. Functional Description HAL 83x 3.1. General Function VSUP VOUT (V) The HAL83x is programmable linear Hall-Effect sensor which provides an output signal proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior) as long as the analog output mode is selected. When the PWM output mode is selected, the PWM signal is not ratiometric to the supply voltage (for HAL 835 only). VSUP (V) 8 7 6 5 VSUP OUT GND Fig. 3–1: Programming with VSUP modulation The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers and converted to an output signal. The function and the parameters for the DSP are explained in Section 3.2. on page 8. The setting of the LOCK register disables the programming of the EEPROM memory for all time. It also disables the reading of the memory. This register cannot be reset. As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 3–1). In the supply voltage range from 4.5 V up to 5.5 V, the sensor generates an normal output signal. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin (see also application note “HAL 8xy, HAL 100x Programmer Board”). The output is switched off during the communication. Several sensors in parallel to the same supply and ground line can be programmed individually. The selection of each sensor is done via its output pin. For HAL835 the digital output for generation of the BiPhase-M programming protocol is also used to generate the PWM output signal. The open-circuit detection function provides a defined output voltage for the analog output if the VSUP or GND line are broken. Internal temperature compensation circuitry and spinning-current offset compensation enable operation over the full temperature range with minimal changes in accuracy and high offset stability. The circuitry also reduces offset shifts due to mechanical stress from the package. The non-volatile memory consists of redundant and non-redundant EEPROM cells. The non-redundant EEPROM cells are only used to store production information inside the sensor. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at all pins. 6 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET VSUP Internally Stabilized Supply and Protection Devices Switched Hall Plate Temperature Dependent Bias Oscillator A/D Converter Digital Signal Processing Open-Circuit, Overvoltage, Undervoltage Detection D/A Converter Analog Output 50 Protection Devices 50 OUT EEPROM Memory Supply Level Detection Digital Output Open-Circuit Detection Lock Control GND Fig. 3–2: HAL83x block diagram ADC-Readout Register 14 bit Digital Output 14 bit Digital Signal Processing A/D Converter TC TCSQ 5 bit 3 bit TC Range Select 2 bit Digital Filter Mode Register Range Filter 3 bit 2 bit Other: 8 bit Multiplier Sensitivity 14 bit Adder VOQ 11 bit Clamp low 8 bit Limiter Clamp high 9 bit D/A Converter Lock Micronas 1 bit Register EEPROM Memory Lock Control Fig. 3–3: Details of EEPROM Registers and Digital Signal Processing Micronas May 22, 2015; DSH000169_002E 7 HAL 83x DATA SHEET 3.2. Digital Signal Processing and EEPROM The DSP performs signal conditioning and allows adaption of the sensor to the customer application. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 3–3. Terminology: SENSITIVITY: name of the register or register value Sensitivity: name of the parameter The EEPROM registers consist of four groups: Group 1 contains the registers for the adaptation of the sensor to the magnetic system: MODE for selecting the magnetic field range and filter frequency, TC, TCSQ and TC-Range for the temperature characteristics of the magnetic sensitivity. Group 2 contains the registers for defining the output characteristics: SENSITIVITY, VOQ, CLAMP-LOW (MIN-OUT), CLAMP-HIGH (MAX-OUT) and OUTPUT MODE. The output characteristic of the sensor is defined by these parameters. – The parameter VOQ (Output Quiescent Voltage) corresponds to the output signal at B = 0 mT. – The parameter Sensitivity defines the magnetic sensitivity: V OUT Sensitivity = ----------------B Group 4 contains the Micronas registers and LOCK for the locking of all registers. The MICRONAS registers are programmed and locked during production. These registers are used for oscillator frequency trimming, A/ D converter offset compensation, and several other special settings. An external magnetic field generates a Hall voltage on the Hall plate. The ADC converts the amplified positive or negative Hall voltage (operates with magnetic north and south poles at the branded side of the package) to a digital value. This value can be read by the A/DREADOUT register to ensure that the suitable converter modulation is achieved. The digital signal is filtered in the internal low-pass filter and manipulated according to the settings stored in the EEPROM. The digital value after signal processing is readable in the D/A-READOUT register. Depending on the programmable magnetic range of the Hall IC, the operating range of the A/D converter is from 15 mT...+15 mT up to 150 mT...+150 mT. During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent output voltage level and limited according to the clamping voltage levels. The result is converted to an analog signal and stabilized by a push-pull output transistor stage. The D/A-READOUT at any given magnetic field depends on the programmed magnetic field range, the low-pass filter, TC values and CLAMP-LOW and CLAMP-HIGH. The D/A-READOUT range is min. 0 and max. 16383. Note: During application design, it should be taken into consideration that the maximum and minimum D/A-READOUT should not violate the error band of the operational range. – The output voltage can be calculated as: V OUT Sensitivity B + V OQ The output voltage range can be clamped by setting the registers CLAMP-LOW and CLAMP-HIGH in order to enable failure detection (such as short-circuits to VSUP or GND and open connections). Group 3 contains the general purpose register GP. The GP Register can be used to store customer information, like a serial number after manufacturing. Micronas will use this GP REGISTER to store informations like, Lot number, wafer number, x and y position of the die on the wafer, etc. This information can be read by the customer and stored in it’s own data base or it can stay in the sensor as is. 8 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET MODE register The MODE register contains all bits used to configure the A/D converter and the different output modes. Table 3–1: MODE register of HAL830 / HAL835 MODE Bit Number 9 8 7 6 5 Parameter RANGE Reserved OUTPUTMODE 4 3 FILTER 2 1 0 Reserved RANGE (together with bit 9) Magnetic Range Filter The RANGE bits define the magnetic field range of the A/D converter. The FILTER bits define the 3 dB frequency of the digital low-pass filter. Table 3–2: Magnetic Range HAL 835 Table 3–4: FILTER bits defining the3 dB frequency 3 dB Frequency MODE [4:3] MODE [2:1] 80 Hz 00 1 00 500 Hz 10 30 mT 0 00 1 kHz 11 40 mT 1 10 2 kHz 01 60 mT 0 01 80 mT 0 10 Output Format 100 mT 0 11 The OUTPUTMODE bits define the different output modes of HAL83x. 150 mT 1 11 Magnetic Range RANGE MODE MODE [9] 15 mT Table 3–5: OUTPUTMODE for HAL835 Table 3–3: Magnetic Range HAL 830 Magnetic Range RANGE MODE [9] MODE [2:1] 30 mT 0 00 40 mT 1 10 60 mT 0 01 80 mT 0 10 100 mT 0 11 150 mT 1 11 Micronas Output Format MODE [7:5] Analog Output (12 bit) 000 Multiplex Analog Output (continuously) 001 Multiplex Analog Output (external trigger) 011 Burn-In Mode 010 PWM 110 PWM (inverted polarity) 111 Table 3–6: OUTPUTMODE for HAL830 Output Format MODE [7:5] Analog Output (12 bit) 000 May 22, 2015; DSH000169_002E 9 HAL 83x DATA SHEET In Analog Output mode the sensor provides an ratiometric 12 bit analog output voltage between 0 V and 5 V. In Multiplex Analog Output mode the sensor delivers two analog 7-bit values. The LSN (least significant nibble) and MSN of the output value are transmitted separately. This enables the sensor to transmit a 14-bit signal to the 8-bit A/D converter of an ECU with the advantage of achieving a higher signal-to-noise ratio in a disturbed environment. – In external trigger mode the ECU can switch the output of the sensor between LSN and MSN by changing the current flow direction through the sensor’s output. In case the output is pulled up by a 10 k resistor, the sensor sends the MSN. If the output is pulled down, the sensor will send the LSN. Maximum refresh rate is about 500 Hz (2 ms). – In continuous mode the sensor transmits first LSN and then MSN continuously and the ECU must listen to the data stream sent by the sensor. In the Multiplex Analog Output mode 1 LSB is represented by a voltage level change of 39 mV. In Analog Output mode with14 bit 1 LSB would be 0.31 mV. In Burn-In Mode the signal path of the sensors DSP is stimulated internally without applied magnetic field. In this mode the sensor provides a “saw tooth” shape output signal. Shape and frequency of the saw tooth signal depend on the programming of the sensor. This mode can be used for Burn-In test in the customers production line. In PWM mode the sensor provides an 11 bit PWM output. The PWM period is 8 ms and the output signal will change between 0 V and 5 V supply voltage. The magnetic field information is coded in the duty cycle of the PWM signal. The duty cycle is defined as the ratio between the high time “s” and the period “d” of the PWM signal (see Fig. 3–1). Note: The PWM signal is updated with the rising edge. If the duty cycle is evaluated with a microcontroller, the trigger-level for the measurement value should be the falling edge. Please use the rising edge to measure the PWM period. For PWM (inverted) the duty-cycle value is then inverted. Meaning that a 70% duty-cycle in normal PWM mode is 30% duty-cycle in PWM (inverted) mode. Out Vhigh d s Vlow Update time Fig. 3–1: Definition of PWM signal TC Register The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaptation is done by programming the TC (Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output voltage characteristic can be constant over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about 3100 ppm/K up to 1000 ppm/K and quadratic coefficients from about -7 ppm/K² to 2 ppm/K². The full TC range is separated in the following four TC range groups (see Table 3–7 and Table 5–1 on page 27). Table 3–7: TC-Range Groups TC-Range [ppm/k] TC-Range Group (see also Table 5–1 on page 27) 3100 to 1800 0 1750 to 550 2 500 to +450 (default value) 1 +450 to +1000 3 TC (5 bit) and TCSQ (3 bit) have to be selected individually within each of the four ranges. For example 0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ = 1. Please refer to Section 5.3. for more details. 10 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET Sensitivity GP Register The SENSITIVITY register contains the parameter for the multiplier in the DSP. The Sensitivity is programmable between 4 and 4. For VSUP = 5 V, the register can be changed in steps of 0.00049. This register can be used to store some information, like production date or customer serial number. Micronas will store production Lot number, wafer number and x,y coordinates in registers GP1 to GP3. The total register contains of four blocks with a length of 13 bit each.The customer can read out this information and store it in his production data base for reference or he can store own production information instead. For all calculations, the digital value from the magnetic field of the D/A converter is used. This digital information is readable from the D/A-READOUT register. V OUT 16383 SENSITIVITY = -------------------------------------------------------------- Sens INITIAL DA – Readout V DD Note: This register is not a guarantee for traceability. To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In case of writing the registers it is necessary to first write all registers followed by one store sequence at the end. Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written again to these registers. VOQ The VOQ register contains the parameter for the adder in the DSP. VOQ is the output signal without external magnetic field (B = 0 mT) and programmable from VSUP (100% duty-cycle) up to VSUP (100% dutycycle). For VSUP = 5 V, the register can be changed in steps of 4.9 mV (0.05% duty-cycle). Note: If VOQ is programmed to a negative value, the maximum output signal is limited to: LOCK By setting the 1-bit register all registers will be locked and the sensor will no longer respond to any supply voltage modulation. This bit is active after the first power-off and power-on sequence after setting the LOCK bit. V OUTmax = V OQ + V SUP Warning: This register cannot be reset! Clamping Levels The output signal range can be clamped in order to detect failures like shorts to VSUP or GND or an open circuit. The CLAMP-LOW register contains the parameter for the lower limit. The lower clamping limit is programmable between 0 V (min. duty-cycle) and VSUP/2 (50% duty-cycle). For VSUP = 5 V, the register can be changed in steps of 9.77 mV (0.195% duty-cycle). The CLAMP-HIGH register contains the parameter for the upper limit. The upper clamping voltage is programmable between 0 V (min. duty-cycle) and VSUP (max. duty-cycle). For VSUP = 5 V, in steps of 9.77 mV (0.195% duty-cycle). Micronas D/A-READOUT This 14-bit register delivers the actual digital value of the applied magnetic field after the signal processing. This register can be read out and is the basis for the calibration procedure of the sensor in the system environment. Note: The MSB and LSB are reversed compared with all the other registers. Please reverse this register after readout. Note: HAL835: During calibration it is mandatory to select the Analog Output as output format. The D/A-Readout register can be read out only in the Analog Output mode. For all other modes the result read back from the sensor will be a 0. After the calibration the output format can than easily be switched to the wanted output mode, like PWM. May 22, 2015; DSH000169_002E 11 HAL 83x DATA SHEET 3.3. Calibration Procedure Step 2: Initialize DSP 3.3.1. General Procedure As the D/A-READOUT register value depends on the settings of SENSITIVITY, VOQ and CLAMPLOW/HIGH, these registers have to be initialized with defined values, first: For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for generation of the serial telegram for programming (Programmer Board Version 5.1) and the corresponding software (PC83x) for the input of the register values. For the individual calibration of each sensor in the customer application, a two point adjustment is recommended. The calibration shall be done as follows: – VOQINITIAL = 2.5 V – Clamp-Low = 0 V – Clamp-High = 4.999 V – SensINITIAL (see table 3-1.) Table 3–1: Step 1: Input of the registers which need not be adjusted individually The magnetic circuit, the magnetic material with its temperature characteristics, the filter frequency, the output mode and the GP register value are given for this application. Therefore, the values of the following register blocks should be identical for all sensors of the customer application. – FILTER (according to the maximum signal frequency) – RANGE (according to the maximum magnetic field at the sensor position) 3dB Filter frequency SensINITIAL 80 Hz 0.6 500 Hz 0.39 1 kHz 0.42 2 kHz 0.83 Step 3: Define Calibration Points The calibration points 1 and 2 can be set inside the specified range. The corresponding values for VOUT1 and VOUT2 result from the application requirements. – OUTPUTMODE – TC, TCSQ and TC-RANGE (depends on the material of the magnet and the other temperature dependencies of the application) – GP (if the customer wants to store own production information. It is not necessary to change this register) As the clamping levels are given. They have an influence on the D/A-Readout value and have to be set therefore after the adjustment process. Lowclampingvoltage V OUT1,2 Highclampingvoltage For highest accuracy of the sensor, calibration points near the minimum and maximum input signal are recommended. The difference of the output voltage between calibration point 1 and calibration point 2 should be more than 3.5 V. Write the appropriate settings into the HAL83x registers. 12 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET Step 4: Calculation of VOQ and Sensitivity Step 5: Locking the Sensor Set the system to calibration point 1 and read the register D/A-READOUT. The result is the value D/AREADOUT1. The last step is activating the LOCK function by programming the LOCK bit. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensor is now locked and does not respond to any programming or reading commands. Now, set the system to calibration point 2, read the register D/A-READOUT again, and get the value D/AREADOUT2. With these values and the target values VOUT1 and VOUT2, for the calibration points 1 and 2, respectively, the values for Sensitivity and VOQ are calculated as: Warning: This register can not be reset! Sensitivity = Sens INITIAL Vout2 – Vout1 -------------------------------------------------------------------------------- 16384 -------------- D/A-Readout2 – D/A-Readout1 5 1 16384V OQ = ------ Vout2 -----------------------------------– 16 5 1 D/A-Readout2 – 8192 Sensitivity ----------------------------Sens INITIAL 5 -----------1024 This calculation has to be done individually for each sensor. Next, write the calculated values for Sensitivity and VOQ into the IC for adjusting the sensor. At that time it is also possible to store the application specific values for Clamp-Low and Clamp-High into the sensors EEPROM.The sensor is now calibrated for the customer application. However, the programming can be changed again and again if necessary. Note: For a recalibration, the calibration procedure has to be started at the beginning (step 1). A new initialization is necessary, as the initial values from step 1 are overwritten in step 4. Micronas May 22, 2015; DSH000169_002E 13 HAL 83x DATA SHEET 4. Specifications 4.1. Outline Dimensions A2 E1 Bd A3 A4 F1 D1 y Center of sensitive area F3 F2 3 L1 2 L 1 e c Θ b physical dimensions do not include moldflash. 2.5 0 solderability is guaranteed between end of pin and distance F1. 5 mm scale Sn-thickness might be reduced by mechanical handling. A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet. min/max of D1 are specified in the datasheet. UNIT A2 A3 b c D1 e E1 F1 F2 F3 L L1 Θ mm 1.55 1.45 0.7 0.42 0.36 4.05 2.54 4.11 4.01 1.2 0.8 0.60 0.42 4.0 2.0 14.5 min 14.0 min 45° JEDEC STANDARD ANSI ISSUE ITEM NO. - - ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 10-04-29 06609.0001.4 ZG001009_Ver.07 © Copyright 2007 Micronas GmbH, all rights reserved Fig. 4–1: TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread Weight approximately 0.12 g 14 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET A2 E1 Bd A3 A4 F1 D1 y Center of sensitive area 1 2 3 L F2 e b Θ c physical dimensions do not include moldflash. 0 solderability is guaranteed between end of pin and distance F1. 2.5 5 mm scale Sn-thickness might be reduced by mechanical handling. A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet. min/max of D1 are specified in the datasheet. UNIT A2 A3 b c D1 e E1 F1 F2 L Θ mm 1.55 1.45 0.7 0.42 0.36 4.05 1.27 4.11 4.01 1.2 0.8 0.60 0.42 14.5 min 45° JEDEC STANDARD ANSI ISSUE ITEM NO. - - ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 15-01-09 06615.0001.4 Bl. 1 ZG001015_Ver.08 © Copyright 2007 Micronas GmbH, all rights reserved Fig. 4–2: TO92UT-2 Plastic Transistor Standard UT package, 3 pins Weight approximately 0.12 g Micronas May 22, 2015; DSH000169_002E 15 HAL 83x DATA SHEET Δh Δp Δh W2 B W0 W W1 H A L H1 Δp D0 P2 F1 feed direction P0 F2 T1 T view A-B H1= this dimension is different for each sensor type and is specified in the data sheet UNIT D0 F1 F2 H Δh L P0 P2 Δp T T1 W W0 W1 W2 mm 4.0 2.74 2.34 2.74 2.34 20.0 18.0 ±1.0 11.0 max 13.2 12.2 7.05 5.65 ±1.0 0.5 0.9 18.0 6.0 9.0 0.3 JEDEC STANDARD ANSI ISSUE ITEM NO. - ICE 60286-2 ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 15-01-09 06632.0001.4 Bl. 1 ZG001032_Ver.05 © Copyright 2007 Micronas GmbH, all rights reserved Fig. 4–3: TO92UA/UT: Dimensions ammopack inline, spread 16 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET Δh Δp Δh W2 B W0 W W1 H A L H1 Δp D0 P2 F1 feed direction P0 F2 T1 T view A-B H1= this dimension is different for each sensor type and is specified in the data sheet UNIT D0 F1 F2 H Δh L P0 P2 Δp T T1 W W0 W1 W2 mm 4.0 1.47 1.07 1.47 1.07 20.0 18.0 ±1.0 11.0 max 13.2 12.2 7.05 5.65 ±1.0 0.5 0.9 18.0 6.0 9.0 0.3 STANDARD ANSI ISSUE ITEM NO. - IEC 60286-2 ISSUE DATE YY-MM-DD DRAWING-NO. ZG-NO. 15-01-09 06631.0001.4 Bl. 1 ZG001031_Ver.04 © Copyright 2007 Micronas GmbH, all rights reserved Fig. 4–4: TO92UA/UT: Dimensions ammopack inline, not spread Micronas May 22, 2015; DSH000169_002E 17 HAL 83x DATA SHEET 4.2. Soldering, Welding and Assembly Information related to solderability, welding, assembly, and second-level packaging is included in the document “Guidelines for the Assembly of Micronas Packages”. It is available on the Micronas website or on the service portal. 4.3. Pin Connections and Short Descriptions Pin No. Pin Name Type Short Description 1 VSUP SUPPLY Supply Voltage and Programming Pin 2 GND GND Ground 3 OUT I/O Push-Pull Output and Selection Pin 1 VSUP OUT 3 2 GND Fig. 4–5: Pin configuration 4.4. Dimensions of Sensitive Area 0.25 mm x 0.25 mm 4.5. Physical Dimensions TO92UT-2 A4 0.3 mm nominal Bd 0.3 mm D1 4.05 mm ± 0.05 mm H1 min. 22.0 mm max. 24.1 mm y 1.5 mm nominal 18 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 4.6. Absolute Maximum Ratings Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit Condition VSUP Supply Voltage 1 8.5 8.5 V t < 96 h3) VSUP Supply Voltage 1 16 16 V t < 1 h3) VOUT Output Voltage 3 5 16 V VOUT VSUP Excess of Output Voltage over Supply Voltage 3,1 2 V IOUT Continuous Output Current 3 10 10 mA tSh Output Short Circuit Duration 3 10 min VESD ESD Protection1) 1 3 8 7.5 8 7.5 kV TJ Junction Temperature under bias2) 50 190 °C 1) 2) 3) AEC-Q100-002 (100 pF and 1.5 k) For 96 h - Please contact Micronas for other temperature requirements No cumulated stress Micronas May 22, 2015; DSH000169_002E 19 HAL 83x DATA SHEET 4.6.1. Storage and Shelf Life Information related to storage conditions of Micronas sensors is included in the document “Guidelines for the Assembly of Micronas Packages”. It gives recommendations linked to moisture sensitivity level and long-term storage. It is available on the Micronas website or on the service portal. 4.7. Recommended Operating Conditions Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VSUP Supply Voltage 1 4.5 12.4 5 12.5 5.5 12.6 V Condition During programming IOUT Continuous Output Current 3 1.2 1.2 mA RL Load Resistor 3 4.5 10 k Can be pull-up or pulldown resistor CL Load Capacitance 3 0 100 1000 nF Analog output only NPRG Number of EEPROM Programming Cycles 100 cycles 0°C < Tamb < 55°C TJ Junction Temperature Range1) 40 40 40 125 150 170 °C °C °C for 8000 h2) for 2000 h2) for 1000 h2) 1) Depends on the 2) Time values are 20 temperature profile of the application. Please contact Micronas for life time calculations. not cumulative May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 4.8. Characteristics at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking, at Recommended Operation Conditions if not otherwise specified in the column “Conditions”. Typical Characteristics for TJ = 25 °C and VSUP = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit ISUP Supply Current over Temperature Range 1 5 7 10 mA ES Error in Magnetic Sensitivity over Temperature Range5) 3 4 1 0 0 4 1 % Conditions HAL830 HAL835 VSUP = 5 V; 60 mT range, 3db frequency = 500 Hz, TC & TCSQ for linearized temperature coefficients (see Section 4.8.1. on page 23) Analog Output (HAL830 & HAL835) DNL Resolution 3 12 bit ratiometric to VSUP 1) Differential Non-Linearity of D/A converter2) 3 2.0 1.5 0 0 2.0 1.5 LSB HAL830 HAL835 Only @ 25°C ambient temperature INL 0.5 0 0.5 % % of supply voltage3) Non-Linearity of Output Voltage over Temperature 3 ER Ratiometric Error of Output over Temperature (Error in VOUT / VSUP) 3 0.25 0 0.25 % VOUT1 - VOUT2> 2 V during calibration procedure VOffset Offset Drift over Temperature Range VOUT(B = 0 mT)25°C- VOUT(B = 0 mT)max5) 3 0.6 0.2 0.25 0.1 0.6 0.2 % VSUP HAL830 HAL835 For VOUT = 0.35 V ... 4.65 V; VSUP = 5 V, Sensitivity 0.95 VSUP = 5 V; 60 mT range, 3dB frequency = 500 Hz, TC = 15, TCSQ = 1, TC-Range = 1 0.65 < sensitivity < 0.65 VOUTCL Accuracy of Output Voltage at Clamping Low Voltage over Temperature Range 3 15 0 15 mV VOUTCH Accuracy of Output Voltage at Clamping High Voltage over Temperature Range 3 15 0 15 mV RL = 5 k, VSUP = 5 V Spec values are derived from resolutions of the registers ClampLow/Clamp-High and the parameter Voffset VOUTH Upper Limit of Signal Band4) 3 4.65 4.8 V VSUP = 5 V, 1 mA IOUT 1mA VOUTL Lower Limit of Signal Band4) 3 0.2 0.35 V VSUP = 5 V, 1 mA IOUT 1mA ROUT Output Resistance over Recommended Operating Range 3 1 10 VOUTLmax VOUT VOUTHmin tr(O) Step Response Time of Output6) 3 3.0 1.5 1.1 0.9 ms 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 1 kHz 3 dB Filter frequency = 2kHz CL = 10 nF, time to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax tPOD Power-Up Time (Time to reach stable Output Voltage) 1.5 1.7 1.9 ms CL = 10 nF, 90% of VOUT 1) 2) 3) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096 Only tested at 25°C. The specified values are test limits only. Overmolding and packaging might influence this parameter If more than 50% of the selected magnetic field range is used (Sensitivity 0.5) and the temperature compensation is suitable. INL = VOUT VOUTLSF = Least Square Fit Line voltage based on VOUT measurements at a fixed temperature. 4) Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and above VOUTH 5) Tambient = 150°C 6) Guaranteed by design Micronas May 22, 2015; DSH000169_002E 21 HAL 83x DATA SHEET Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions BW Small Signal Bandwidth (3 dB) 3 2 kHz BAC < 10 mT; 3 dB Filter frequency = 2 kHz VOUTn Noise Output VoltageRMS 3 1 5 mV magnetic range = 60 mT 3 dB Filter frequency = 500 Hz Sensitivity 0.7; C = 4.7 nF (VSUP & VOUT to GND) DACGE D/A-Converter Glitch Energy 3 40 nV 7) Resolution 3 11 bit DCMINDUTY Accuracy of Duty Cycle at Clamp Low over Temperature Range 3 0.3 0 0.3 % DCMAXDUTY Accuracy of Duty Cycle at Clamp High over Temperature Range 3 0.3 0 0.3 % Spec values are derived from resolutions of the registers ClampLow/Clamp-High and the parameter DCOQoffset VOUTH Output High Voltage 3 4.8 V VSUP = 5 V, 1 mA IOUT 1mA VOUTL Output Low Voltage 3 0.2 V VSUP = 5 V, 1 mA IOUT 1mA fPWM PWM Output Frequency over Temperature Range 3 105 125 145 Hz tPOD Power-Up Time (Time to reach valid Duty Cycle) 3 8.5 ms tr(O) Step Response Time of Output 3 3 0,9 0,6 0,4 1,2 0.8 0,5 ms 3 dB Filter frequency = 80 Hz 3 dB Filter frequency = 500 Hz 3 dB Filter frequency = 1 kHz 3 dB Filter frequency = 2kHz Time to 90% of final output voltage for a steplike signal Bstep from 0 mT to Bmax PWM Output (HAL835 only) TO92UT Packages Thermal Resistance Rthja junction to air 235 K/W Measured with a 1s0p board Rthjc junction to case 61 K/W Measured with a 1s0p board 7) The energy of the impulse injected into the analog output when the code in the D/A-Converter register changes state. This energy is normally specified as the area of the glitch in nVs. 22 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 4.8.1. Definition of sensitivity error ES ES is the maximum of the absolute value of the quotient of the normalized measured value1 over the normalized ideal linear2 value minus 1: ES = max abs meas ------------- – 1 ideal {Tmin, Tmax} In the example below, the maximum error occurs at 10°C: ES = 1.001 ------------- – 1 = 0.8% 0.993 1: 2 normalized to achieve a least-squares method straight line that has a value of 1 at 25°C : normalized to achieve a value of 1 at 25°C ideal 200 ppm/k 1.03 relative sensitivity related to 25 °C value least-squares method straight line of normalized measured data measurement example of real sensor, normalized to achieve a value of 1 of its least-squares method straight line at 25 °C 1.02 1.01 1.001 1.00 0.992 0.99 0.98 -50 -25 -10 0 25 50 75 100 temperature [°C] 125 150 175 Fig. 4–6: ES definition example Micronas May 22, 2015; DSH000169_002E 23 HAL 83x DATA SHEET 4.8.2. Power-On Operation at TJ = 40 °C to +170 °C, after programming and locking. Typical Characteristics for TJ = 25 °C. Symbol Parameter Min. Typ. Max. Unit PORUP Power-On Reset Voltage (UP) 3.4 V PORDOWN Power-On Reset Voltage (DOWN) 3.0 V 97%VSUP Vout [V] 97%VSUP 97%VSUP Ratiometric Output 3.5 V VSUP,UV 5 VSUP,OV VSUP [V] : Output Voltage undefined VSUP,UV = Undervoltage Detection Level VSUP,OV = Overvoltage Detection Level Fig. 4–7: Analog output behavior for different supply voltages VSUP First PWM starts 5V 4.2 V VSUP,UVmin. time tPOD VOUT Output undefined The first period contains no valid data No valid signal time Valid signal Fig. 4–8: Power-up behavior of HAL835 with PWM output activated 24 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 4.9. Diagnostics and Safety Features 4.9.1. Overvoltage and Undervoltage Detection at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions VSUP,UV Undervoltage detection level 1 4.2 4.5 V 1)2) VSUP,OV Overvoltage detection level 1 8.5 8.9 10.0 V 1)2) 1) If the supply voltage drops below VSUP,UV or rises above VSUP,OV, the output voltage is switched to VSUP (97% of VSUP at RL = 10 k to GND). 2) If the PWM output of HAL835 is activated, then the output signal will follow VSUP and PWM signal is switched off Note: The over- and undervoltage detection is activated only after locking the sensor! 4.9.2. Open-Circuit Detection at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor. Symbol Parameter Pin No. Min. Typ. Max. Unit Comment VOUT Output voltage at open VSUP line 3 0 0 0.15 V VSUP = 5 V RL = 10 kto 200k 0 0 0.2 V VSUP = 5 V 5 kRL < 10 k 0 0 0.25 V VSUP = 5 V 4.5 kRL < 10 k1) 4.85 4.9 5.0 V VSUP = 5 V RL = 10 kto 200k 4.8 4.9 5.0 V VSUP = 5 V 5 kRL < 10 k 4.75 4.9 5.0 V VSUP = 5 V 4.5 kRL < 10 k1) VOUT Output voltage at open GND line 3 1) Not tested Note: In case that the PWM output mode is used the sensor will stop transmission of the PWM signal if VSUP or GND lines are broken and VOUT will be according to above table. 4.9.3. Overtemperature and Short-Circuit Protection If overtemperature >180 °C or a short-circuit occurs, the output will go into tri-state condition. 4.9.5. ADC Diagnostic The A/D-READOUT register can be used to avoid under/overrange effects in the A/D converter. 4.9.4. EEPROM Redundancy The non-volatile memory uses the Micronas Fail Safe Redundant Cell technology well proven in automotive applications. Micronas May 22, 2015; DSH000169_002E 25 HAL 83x DATA SHEET 5.2. Use of two HAL83x in Parallel (for analog output mode only) 5. Application Notes 5.1. Application Circuit (for analog output mode only) For EMC protection, it is recommended to connect one ceramic 100 nF capacitor each between ground and the supply voltage, respectively the output voltage pin. Please note that during programming, the sensor will be supplied repeatedly with the programming voltage of 12.5 V for 100 ms. All components connected to the VSUP line at this time must be able to resist this voltage. Two different HAL83x sensors which are operated in parallel to the same supply and ground line can be programmed individually. In order to select the IC which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common supply line. Then, the appropriate IC is activated by an “Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program commands. If the second IC has to be programmed, the “Deactivate” command is sent again, and the second IC can be selected. VSUP Note: The multi-programming of two sensors requires a 10 k pull-down resistor on the sensors output pins. OUT HAL83x 100 nF VSUP 100 nF GND OUT A & Select A Fig. 5–1: Recommended application circuit (analog output signal) 100 nF HAL83x Sensor A 100 nF HAL83x Sensor B OUT B & Select B 100 nF GND Fig. 5–2: Recommended Application circuit (parallel operation of two HAL83x) 26 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET Table 5–1: Temperature Compensation 5.3. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC, TCSQ and TC-Range codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC, TCSQ and TC-Range combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. Table 5–1: Temperature Compensation TCSQ TC-Range Group TC TCSQ 1200 2 12 5 1300 2 12 0 1400 2 8 3 1500 2 4 7 1600 2 4 1 1700 2 0 6 1800 0 31 6 1900 0 28 7 Temperature Coefficient of Magnet (ppm/K) TC-Range Group 1075 3 31 7 2000 0 28 2 1000 3 28 1 2100 0 24 6 900 3 24 0 2200 0 24 1 750 3 16 2 2400 0 20 0 675 3 12 2 2500 0 16 5 575 3 8 2 2600 0 14 5 450 3 4 2 2800 0 12 1 400 1 31 0 2900 0 8 6 250 1 24 1 3000 0 8 3 150 1 20 1 3100 0 4 7 50 1 16 2 3300 0 4 1 0 1 15 1 3500 0 0 4 100 1 12 0 200 1 8 1 300 1 4 4 400 1 0 7 500 1 0 0 600 2 31 2 700 2 28 1 800 2 24 3 900 2 20 6 1000 2 16 7 1100 2 16 2 Micronas TC Temperature Coefficient of Magnet (ppm/K) Note: The above table shows only some approximate values. Micronas recommends to use the TCCalc software to find optimal settings for temperature coefficients. Please contact Micronas for more detailed information. May 22, 2015; DSH000169_002E 27 HAL 83x DATA SHEET 5.4. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation applies: T = ISUP * VSUP * RthjX The X represents junction-to-air or junction-to-case. In order to estimate the temperature difference T between the junction and the respective reference (e.g. air, case, or solder point) use the max. parameters for ISUP, RthX, and the max. value for VSUP from the application. The following example shows the result for junction-to air conditions. VSUP = 5.5 V, Rthja = 250 K/W and ISUP = 10 mA the temperature difference T = 13.75 K. The junction temperature TJ is specified. The maximum ambient temperature TAmax can be estimated as: TAmax = TJmax T 5.5. EMC and ESD Please contact Micronas for the detailed investigation reports with the EMC and ESD results. 28 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 6. Programming tr tf VSUPH 6.1. Definition of Programming Pulses The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a serial telegram on the output pin. The bits in the serial telegram have a different bit time for the VSUP-line and the output. The bit time for the VSUP-line is defined through the length of the Sync Bit at the beginning of each telegram. The bit time for the output is defined through the Acknowledge Bit. A logical “0” is coded as no voltage change within the bit time. A logical “1” is coded as a voltage change between 50% and 80% of the bit time. After each bit, a voltage change occurs. tp0 logical 0 tp0 or VSUPL tp1 VSUPH tp0 logical 1 VSUPL or tp0 tp1 Fig. 6–1: Definition of logical 0 and 1 bit 6.2. Definition of the Telegram Each telegram starts with the Sync Bit (logical 0), 3 bits for the Command (COM), the Command Parity Bit (CP), 4 bits for the Address (ADR), and the Address Parity Bit (AP). There are 4 kinds of telegrams: – Write a register (see Fig. 6–2) After the AP Bit, follow 14 Data Bits (DAT) and the Data Parity Bit (DP). If the telegram is valid and the command has been processed, the sensor answers with an Acknowledge Bit (logical 0) on the output. – Read a register (see Fig. 6–3) After evaluating this command, the sensor answers with the Acknowledge Bit, 14 Data Bits, and the Data Parity Bit on the output. – Programming the EEPROM cells (see Fig. 6–4) After evaluating this command, the sensor answers with the Acknowledge Bit. After the delay time tw, the supply voltage rises up to the programming voltage. – Activate a sensor (see Fig. 6–5) If more than one sensor is connected to the supply line, selection can be done by first deactivating all sensors. The output of all sensors have to be pulled to ground. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands will only be accepted from the activated sensor. Micronas May 22, 2015; DSH000169_002E 29 HAL 83x DATA SHEET Table 6–1: Telegram parameters Symbol Parameter Pin Min. Typ. Max. Unit Remarks VSUPL Supply Voltage for Low Level during Programming 1 5 5.6 6 V VSUPH Supply Voltage for High Level during Programming 1 6.8 8.0 8.5 V tr Rise time 1 0.05 ms see Fig. 6–1 on page 29 tf Fall time 1 0.05 ms see Fig. 6–1 on page 29 tp0 Bit time on VSUP 1 1.7 1.75 1.9 ms tp0 is defined through the Sync Bit tpOUT Bit time on output pin 3 2 3 4 ms tpOUT is defined through the Acknowledge Bit tp1 Duty-Cycle Change for logical 1 1, 3 50 65 80 % % of tp0 or tpOUT VSUPPROG Supply Voltage for Programming the EEPROM 1 12.4 12.5 12.6 V tPROG Programming Time for EEPROM 1 95 100 105 ms trp Rise time of programming voltage 1 0.2 0.5 1 ms see Fig. 6–1 on page 29 tfp Fall time of programming voltage 1 0 1 ms see Fig. 6–1 on page 29 tw Delay time of programming voltage after Acknowledge 1 0.5 0.7 1 ms Vact Voltage for an Activate pulse 3 3 4 5 V tact Duration of an Activate pulse 3 0.05 0.1 0.2 ms Vout,deact Output voltage after deactivate command 3 0 0.1 0.2 V WRITE Sync COM CP ADR AP DAT DP VSUP Acknowledge VOUT Fig. 6–2: Telegram for coding a Write command READ Sync COM CP ADR AP VSUP Acknowledge DAT DP VOUT Fig. 6–3: Telegram for coding a Read command 30 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET tPROG trp tfp VSUPPROG ERASE, PROM, and LOCK Sync COM CP ADR AP VSUP Acknowledge VOUT tw Fig. 6–4: Telegram for coding the EEPROM programming VACT tr tACT tf VOUT Fig. 6–5: Activate pulse Address Parity Bit (AP) 6.3. Telegram Codes This parity bit is “1” if the number of zeros within the 4 Address bits is uneven. The parity bit is “0” if the number of zeros is even. Sync Bit Data Bits (DAT) Each telegram starts with the Sync Bit. This logical “0” pulse defines the exact timing for tp0. The 14 Data Bits contain the register information. Command Bits (COM) The registers use different number formats for the Data Bits. These formats are explained in Section 6.4. The Command code contains 3 bits and is a binary number. Table 6–2 shows the available commands and the corresponding codes for the HAL83x. In the Write command, the last bits are valid. If, for example, the TC register (10 bits) is written, only the last 10 bits are valid. Command Parity Bit (CP) In the Read command, the first bits are valid. If, for example, the TC register (10 bits) is read, only the first 10 bits are valid. This parity bit is “1” if the number of zeros within the 3 Command Bits is uneven. The parity bit is “0”, if the number of zeros is even. Data Parity Bit (DP) This parity bit is “1” if the number of zeros within the binary number is even. The parity bit is “0” if the number of zeros is uneven. Address Bits (ADR) The Address code contains 4 bits and is a binary number. Table 6–3 shows the available addresses for the HAL83x registers. Acknowledge After each telegram, the output answers with the Acknowledge signal. This logical “0” pulse defines the exact timing for tpOUT. Micronas May 22, 2015; DSH000169_002E 31 HAL 83x DATA SHEET Table 6–2: Available commands Command Code Explanation READ 2 read a register WRITE 3 write a register PROM 4 program all non-volatile registers ERASE 5 erase all non-volatile registers 6.4. Number Formats 6.5. Register Information Binary number: CLAMP-LOW The most significant bit is given as first, the least significant bit as last digit. – The register range is from 0 up to 255. – The register value is calculated by: Example: 101001 represents 41 decimal. LowClampingVoltage 2 CLAMP-LOW = --------------------------------------------------------------- 255 V SUP Signed binary number: The first digit represents the sign of the following binary number (1 for negative, 0 for positive sign). Example: 0101001 represents +41 decimal 1101001 represents 41 decimal CLAMP-HIGH – The register range is from 0 up to 511. – The register value is calculated by: Two’s-complement number: The first digit of positive numbers is “0”, the rest of the number is a binary number. Negative numbers start with “1”. In order to calculate the absolute value of the number, calculate the complement of the remaining digits and add “1”. Example: 0101001 represents +41 decimal 1010111 represents 41 decimal HighClampingVoltage CLAMP-HIGH = ------------------------------------------------------ 511 V SUP VOQ – The register range is from 1024 up to 1023. – The register value is calculated by: V OQ VOQ = ------------- 1024 V SUP SENSITIVITY – The register range is from 8192 up to 8191. – The register value is calculated by: SENSITIVITY = Sensitivity 2048 32 May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET TC D/A-READOUT – The TC register range is from 0 up to 1023. – This register is read only. – The register value is calculated by: – The register range is from 0 up to 16383. TC = GROUP 256 + TCValue 8 + TCSQValue DEACTIVATE – This register can only be written. – The register has to be written with 2063 decimal (80F hexadecimal) for the deactivation. MODE – The register range is from 0 up to 1023 and contains the settings for FILTER, RANGE, OUTPUTMODE: – The sensor can be reset with an Activate pulse on the output pin or by switching off and on the supply voltage. MODE = RANGE Mode 9 512 + OUTPUTMODE 32 + FILTER 8 + RANGE Mode 2:1 2 Table 6–3: Available register addresses Register Code Data Bits Format Customer Remark CLAMP-LOW 1 8 binary read/write/program Low clamping voltage CLAMP-HIGH 2 9 binary read/write/program High clamping voltage VOQ 3 11 two’s compl. binary read/write/program Output quiescent voltage SENSITIVITY 4 14 signed binary read/write/program MODE 5 10 binary read/write/program Range, filter, output mode LOCKR 6 2 binary read/write/program Lock Bit A/D READOUT 7 14 two’s compl. binary read GP REGISTERS 1...3 8 3x13 binary read/write/program 1) D/A-READOUT 9 14 binary read Bit sequence is reversed during read TC 11 10 binary read/write/program bits 0 to 2 TCSQ bits 3 to 7 TC bits 8 to 9 TC Range GP REGISTER 0 12 13 binary read/write/program 1) DEACTIVATE 15 12 binary write Deactivate the sensor 1) To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In case of a writing the registers it is necessary to first write all registers followed by one store sequence at the end. Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written again to these registers. Micronas May 22, 2015; DSH000169_002E 33 HAL 83x DATA SHEET 6.6. Programming Information Table 6–4: Data formats Char DAT3 DAT2 DAT1 DAT0 Register Bit 15 14 13 12 11 10 09 08 07 06 05 04 03 02 01 00 CLAMP LOW Write Read V V V V V V V V V V V V V V V V CLAMP HIGH Write Read V V V V V V V V V V V V V V V V V V VOQ Write Read V V V V V V V V V V V V V V V V V V V V V V SENSITIVITY Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V V V MODE Write Read V V V V V V V V V V V V V V V V V V V V LOCKR Write Read V V GP 1...3 Registers Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V D/AREADOUT1) Read V V V V V V V V V V V V V V TC Write Read V V V V V V V V V V V V V V V V V V V V GP 0 Register Write Read V V V V V V V V V V V V V V V V V V V V V V V V V V DEACTIVATE Write 1 0 0 0 0 0 0 0 1 1 1 1 V: valid, : ignore, bit order: MSB first 1) LSB first If the content of any register (except the lock registers) is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must be permanently stored in the EEPROM. Permanently storing a value in the EEPROM is done by first sending an ERASE command followed by sending a PROM command. The address within the ERASE and PROM commands must be zero. ERASE and PROM act on all registers in parallel. If all HAL83x registers are to be changed, all writing commands can be sent one after the other, followed by sending one ERASE and PROM command at the end. During all communication sequences, the customer has to check if the communication with the sensor was successful. This means that the acknowledge and the parity bits sent by the sensor have to be checked by 34 the customer. If the Micronas programmer board is used, the customer has to check the error flags sent from the programmer board. Note: For production and qualification tests it is mandatory to set the LOCK bit after final adjustment and programming of HAL83x. The LOCK function is active after the next power-up of the sensor. The success of the lock process must be checked by reading at least one sensor register after locking and/or by an analog check of the sensors output signal. Electrostatic discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. May 22, 2015; DSH000169_002E Micronas HAL 83x DATA SHEET 7. Data Sheet History 1. Advance Information: ”HAL 83x Robust Mutlti-Purpose Programmable Linear Hall-Effect Sensor Family”, Jan. 13, 2013, AI000169_001EN. First release of the Advance Information. 2. Preliminary Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”, Aug. 2, 2013, PD000213_001EN. First release of the preliminary data sheet. Major Changes: – Absolute Maximum Ratings: Values for VESD – Characteristics: Values for VOffset 3. Preliminary Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”, Oct. 2, 2014, PD000213_002EN. Second release of the preliminary data sheet. Major Changes: – TO92 UT package drawing updated – TO92 UT package spread legs option deleted – Recommended operating conditions and characteristics: • Updated DNL value for HAL 835 • Updated RLmin (load resistor) – Diagnostics and safety features updated – Offset correction feature for HAL 835 removed 4. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”, Feb. 25, 2015, DSH000169_001E. First release of the data sheet. Major Changes: – Step Response Times 5. Data Sheet: “HAL 83x Robust Multi-Purpose Programmable Linear Hall-Effect Sensor Family”, May 22, 2015, DSH000169_002E. Second release of the data sheet. Changes: – Package TO92UT-1 (spread) added – Package drawing TO92UT-2 (non-spread) updated – Ammopack drawings updated – Assembly and storage information – Several text corrections Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: [email protected] Internet: www.micronas.com 35 May 22, 2015; DSH000169_002E Micronas