HAL_1002_Highly_Precise_Programmable_Hall

Hardware
Documentation
D at a S h e e t
®
HAL 1002
Highly Precise Programmable
Hall-Effect Switch
Edition April 25, 2014
DSH000163_001E
HAL 1002
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents
EP0 953 848, EP 0 647 970, EP 1 039 357,
EP 1 575 013, EP 1 949 034
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
military, aviation, or aerospace applications! Unless
explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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Micronas
HAL 1002
Contents
Page
Section
Title
4
4
4
1.
1.1.
1.2.
Introduction
Major Applications
Features
5
5
5
5
2.
2.1.
2.2.
2.3.
Ordering Information
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
6
6
8
10
12
13
3.
3.1.
3.2.
3.3.
3.4.
3.5.
Functional Description
General Function
Digital Signal Processing and EEPROM
MODE register
General Calibration Procedure
Example: Calibration of a Position Switch
14
14
16
16
16
16
17
18
18
19
19
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
4.6.1.
4.7.
4.8.
4.9.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
Pin Connections and Short Descriptions
Dimension of Sensitive Area
Physical Dimensions
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics
20
20
20
21
21
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Application Circuit
Temperature Compensation
Ambient Temperature
EMC and ESD
22
22
22
24
25
25
28
6.
6.1.
6.2.
6.3.
6.4.
6.5.
6.6.
Programming
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
29
7.
Data Sheet History
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Micronas
HAL 1002
DATA SHEET
Highly Precise Programmable Hall-Effect Switch
1.1. Major Applications
Release Note: Revision bars indicate significant
changes to the previous edition.
Due to the sensor’s versatile programming characteristics, the HAL1002 is the optimal system solution for
applications which require very precise contactless
switching:
1. Introduction
– Endpoint detection
The HAL1002 is the improved successor of the
HAL 1000 Hall switch. The major sensor characteristics, the two switching points BON and BOFF, are programmable for the application. The sensor can be programmed to be unipolar or latching, sensitive to the
magnetic north pole or sensitive to the south pole, with
normal or with an electrically inverted output signal.
Several examples are shown in Fig. 3–4 through
Fig. 3–7.
– Level switch (e.g. liquid level)
The HAL1002 is based on the HAL83x family and features a temperature-compensated Hall plate with
choppered offset compensation, an A/D converter, digital signal processing, a push-pull output stage, an
EEPROM memory with redundancy and lock function
for the calibration data, a serial interface for programming the EEPROM, and protection devices at all pins.
Internal digital signal processing is of great benefit
because analog offsets, temperature shifts, and
mechanical stress effects do not degrade the sensor
accuracy.
– EMC and ESD optimized design
ESD HBM performance >7 kV
The HAL1002 is programmable by modulating the
supply voltage. No additional programming pin is
needed. Programming is simplified through the use of
a 2-point calibration. Calibration is accomplished by
adjusting the sensor output directly to the input signal.
Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated for the final assembly. This offers a low-cost
alternative for all applications that presently require
mechanical adjustment or other system calibration.
In addition, the temperature compensation of the Hall
IC can be tailored to all common magnetic materials by
programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables
operation over the full temperature range with constant
switching points.
– Electronic fuse (current measurement)
1.2. Features
– High-precision Hall switch with programmable
switching points and switching behavior
– AEC-Q100 qualified
– Switching points programmable from 150 mT up to
150 mT in steps of 0.5% of the magnetic field range
– Multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– Temperature characteristics are programmable for
matching all common magnetic materials
– Programming through a modulation of the supply
voltage
– Operates from 40 °C up to 150 °C ambient
temperature
– Operates from 4.5 V up to 8.5 V supply voltage in
specification and functions up to 11 V
– Operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– Magnetic characteristics are extremely robust
against mechanical stress effects
– Overvoltage and reverse-voltage protection at all
pins
– Short-circuit protected push-pull output
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can easily
be done with a PC and the application kit from Micronas.
The sensor is designed and produced in sub-micron
CMOS technology for the use in hostile industrial and
automotive applications with nominal supply voltage of
5 V in the ambient temperature range from 40 °C up
to 150 °C.
The HAL1002 is available in the leaded package
TO92UT-2.
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Micronas
HAL 1002
DATA SHEET
2. Ordering Information
2.1. Marking Code
The HAL1002 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
Temperature Range
A
HAL1002
1002A
2.2. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A: TJ = 40 °C to +170 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 5.3.
on page 21.
2.3. Hall Sensor Package Codes
HALXXXXPA-T
Temperature Range: A
Package: UT for TO92UT-1/-2
Type: 1002
Example: HAL1002UT-A
 Type:
1002
 Package:
TO92UT
 Temperature Range: TJ = 40 °C to +170 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
Micronas
April 25, 2014; DSH000163_001EN
5
HAL 1002
DATA SHEET
3. Functional Description
3.1. General Function
The HAL1002 is a monolithic integrated circuit which
provides a digital output signal. The sensor is based
on the HAL83x design.
The Hall plate is sensitive to magnetic north and south
polarity. The external magnetic field component
perpendicular to the branded side of the package
generates a Hall voltage. This voltage is converted to a
digital value and processed in the Digital Signal
Processing Unit (DSP) according to the settings of the
EEPROM registers. The function and the parameters
for the DSP are explained in Section 3.2. on page 8.
The setting of the LOCK register disables the
programming of the EEPROM memory for all time.
This register cannot be reset.
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by
modulating the supply voltage (see Fig. 3–1). After
detecting a command, the sensor reads or writes the
memory and answers with a digital signal on the output
pin. The digital output is switched off during the
communication.
Internal temperature compensation circuitry and the
choppered offset compensation enable the operation
over the full temperature range with minimal changes
of the switching points. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the HAL1002 is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
HAL
1002
VSUP
VOUT (V)
VSUP (V)
8
7
6
5
VSUP
OUT
GND
Fig. 3–1: Programming with VSUP modulation
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Micronas
HAL 1002
DATA SHEET
VSUP
Internally
stabilized
Supply and
Protection
Devices
Switched
Hall Plate
Temperature
Dependent
Bias
Oscillator
A/D
Converter
Digital
Signal
Processing
Protection
Devices
Digital
Output
100 
OUT
EEPROM Memory
Supply
Level
Detection
Lock Control
GND
Fig. 3–2: HAL1002 block diagram
ADC-Readout Register
12 bit
Digital Signal Processing
Digital Output
12 bit
Limiter
A/D
Converter
TC
TCSQ
5 bit
3 bit
Digital
Filter
Mode Register
Range
Filter
3 bit
2 bit
Multiplier
Adder
Comparator
Sensitivity
14 bit
VOQ
11 bit
Low
Level
8 bit
High
Level
9 bit
Lock
Micronas
1 bit
Register
Other: 5 bit
TC Range Select 2 bit
EEPROM Memory
Lock
Control
Fig. 3–3: Details of EEPROM Registers and Digital Signal Processing
Micronas
April 25, 2014; DSH000163_001EN
7
HAL 1002
DATA SHEET
3.2. Digital Signal Processing and EEPROM
The DSP is the main part of the sensor and performs
the signal processing. The parameters for the DSP are
stored in the EEPROM registers. The details are
shown in Fig. 3–3.
Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity: name of the parameter
EEPROM Registers:
The EEPROM registers include three groups:
Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the
magnetic sensitivity and thereby for the switching
points.
Group 2 contains the registers for defining the
switching points: SENSITIVITY, VOQ, LOW-LEVEL,
and HIGH-LEVEL.
The comparator compares the processed signal
voltage with the reference values Low-Level and HighLevel.
The output switches on (low) if the signal voltage is
higher than the High-Level, and switches off (high) if
the signal falls below the Low-Level. Several examples
of different switching characteristics are shown in
Fig. 3–4 to Fig. 3–7.
– The parameter VOQ (Output Quiescent Voltage) corresponds to the signal voltage at B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
Sensitivity =
VSignal
B
– The signal voltage can be calculated as follows:
VSignal Sensitivity B + VOQ
Therefore, the switching points are programmed by
setting the SENSITIVITY, VOQ, LOW-LEVEL, and
HIGH-LEVEL registers. The available Micronas
software calculates the best parameter set respecting
the ranges of each register.
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Micronas
HAL 1002
DATA SHEET
Digital
Output
VOQ
Digital
Output
High-Level
High-Level
Low-Level
Low-Level
VOQ
B
B
VOUT
VSUP
VOUT
VSUP
B
Fig. 3–4: HAL1002 with unipolar behavior
B
Fig. 3–6: HAL1002 with unipolar inverted behavior
Digital
Output
Digital
Output
High-Level
High-Level
VOQ
Low-Level
Low-Level
VOQ
B
B
VOUT
VOUT
VSUP
VSUP
B
Fig. 3–5: HAL1002 with latching behavior
Micronas
B
Fig. 3–7: HAL1002 with unipolar behavior sensitive to
the other magnetic polarity
April 25, 2014; DSH000163_001EN
9
HAL 1002
DATA SHEET
3.3. MODE register
The MODE register contains all bits used to configure
the A/D converter and the different output modes.
MODE
Bit Number
9
8
7
6
5
Parameter
RANGE
Signed Offset
Correction
OUTPUTMODE
4
3
FILTER
2
1
RANGE
(together with
bit 9)
0
Offset Correction
Table 3–1: MODE register of the HAL 1002
Offset Correction
Magnetic Range
The Offset Correction function can be used for
handling unipolar magnetic fields or systems with high
magnetic offset and small magnetic amplitudes. The
OFFSET CORRECTION register allows to adjust the
digital offset after the built-in A/D-converter. The digital
offset can be programmed to 50%, 0% and 50% of
A/D-converter full-scale range.
Offset
Correction
OFFSET CORRECTION
MODE [8]
MODE [0]
50%
0
1
0
0
0
50%
1
1
MODE [9]
MODE [2:1]
40 mT
1
10
60 mT
0
01
80 mT
0
10
100 mT
0
11
150 mT
1
11
Table 3–2: Magnetic Range
Filter
The FILTER bits define the 3 dB frequency of the
digital low pass filter.
For Offset correction please contact Micronas service.
Magnetic Range
The RANGE bits define the magnetic field range of
the A/D converter.
Magnetic Range
RANGE
3 dB Frequency
MODE [4:3]
80 Hz
00
500 Hz
10
1 kHz
11
2 kHz
01
RANGE
MODE [9]
MODE [2:1]
15 mT
1
00
30 mT
0
00
Table 3–2: Magnetic Range
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Micronas
HAL 1002
DATA SHEET
Output Format
VOQ Register
The OUTPUTMODE bits define the different output
modes of HAL1002.
The VOQ register contains the parameter for the adder
in the DSP. VOQ is the signal voltage without external
magnetic
field
(B = 0 mT,
respectively
ADC-READOUT = 0) and programmable from VSUP
up to VSUP. For VSUP = 5 V, the register can be
changed in steps of 4.9 mV.
Output Format
MODE [7:5]
Switch (positive polarity)
100
Switch (negative polarity)
101
Note: If VOQ is programmed to a negative voltage, the
maximum signal voltage is limited to:
Table 3–3: OUTPUTMODE
VSignal max = VOQ + VSUP
TC Register
The temperature dependence of the magnetic
sensitivity can be adapted to different magnetic
materials in order to compensate for the change of the
magnetic strength with temperature. The adaptation is
done by programming the TC (Temperature
Coefficient) and the TCSQ registers (Quadratic
Temperature Coefficient). Thereby, the slope and the
curvature of the temperature dependence of the
magnetic sensitivity can be matched to the magnet
and the sensor assembly. As a result, the output
voltage characteristic can be constant over the full
temperature range. The sensor can compensate for
linear temperature coefficients ranging from about 
3100 ppm/K up to 1000 ppm/K and quadratic
coefficients from about -7 ppm/K² to 2 ppm/K².
The full TC range is separated in the following four
groups:
Reference Level Register
The LOW-LEVEL and HIGH-LEVEL registers contain
the reference values of the comparator.
The Low-Level is programmable between 0 V and
VSUP/2. The register can be changed in steps of
2.44 mV. The High-Level is programmable between
0 V and VSUP in steps of 2.44 mV.
The four parameters Sensitivity, VOQ, Low-Level, and
High-Level define the switching points BON and BOFF.
For calibration in the system environment, a 2-point
adjustment procedure is recommended (see
Section 3.4.). The suitable parameter set for each
sensor can be calculated individually by this procedure.
GP Register
TC-Range [ppm/k]
GROUP
3100 to 1800
0
1750 to 550
2
500 to +450 (default value)
1
+450 to +1000
3
This register can be used to store information, like
production date or customer serial number. Micronas
will store production lot number, wafer number and x,y
coordinates in registers GP1 to GP3. The total register
contains four blocks with a length of 13 bit each.The
customer can read out this information and store it in
his production data base for reference or he can store
own production information instead.
TC (5 bit) and TCSQ (3 bit) have to be selected
individually within each of the four ranges. For example
0 ppm/k requires TC-Range = 1, TC = 15 and TCSQ =
1. Please refer to Section 5.2. on page 20 for more
details.
Sensitivity Register
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. Sensitivity is programmable
between 4 and 4 in steps of 0.00049. Sensitivity = 1
corresponds to an increase of the signal voltage by
VSUP if the ADC-READOUT increases by 2048.
Micronas
Note: This register is not a guarantee for traceability
because readout of registers is not possible
after locking the IC.
To read/write this register it is mandatory to
read/write all GP register one after the other
starting with GP0. In case of a writing the registers it necessary to first write all registers followed by one store sequence at the end. Even if
only GP0 should be changed all other GP registers must first be read and the read out data
must be written again to these registers.
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HAL 1002
DATA SHEET
LOCK Register
By setting the LSB of this 2-bit register, all registers will
be locked, and the sensor will no longer respond to
any supply voltage modulation. This bit is active after
the first power-off and power-on sequence after setting
the LOCK bit. After locking of sensor is active, it will no
longer respond to power supply modulation.
For the individual calibration of each sensor in the
customer‘s application, a two-point adjustment is
recommended (see Fig. 3–1 for an example). When
using the application kit, the calibration can be done in
three steps:
Step 1: Input of the registers which need not be
adjusted individually
Warning: This register cannot be reset!
The magnetic circuit, the magnetic material with its
temperature characteristics, and the filter frequency,
are given for this application.
ADC-READOUT Register
Therefore, the values of the following registers should
be identical for all sensors in the application.
This 14-bit register delivers the actual digital value of
the applied magnetic field after filtering but before the
signal processing. This register can be read out and is
the basis for the calibration procedure of the sensor in
the system environment.
– FILTER
(according to maximum signal frequency)
The 500 Hz range is recommended for highest
accuracy.
D/A-READOUT
– RANGE
(according to the maximum magnetic field at the
sensor position)
This 14-bit register delivers the actual digital value of
the applied magnetic field after the signal processing.
– TC and TCSQ
(depends on the material of the magnet and the
other temperature dependencies of the application)
This register can be read out and is the basis for the
calibration procedure of the sensor in the system
environment.
Write the appropriate settings into the HAL1002
registers.
Step 2: Calculation of the Sensor Parameters
Note: The MSB and LSB are reversed compared with
all the other registers. Please reverse this register after readout.
Note: During calibration it is mandatory to select the
Analog Output as output format.The D/A-Readout register can be read out only in the output
mode. For all other modes the result read back
from the sensor will be a 0. After the calibration
the output format can than easily be switched to
the wanted output mode.
Set the system to the calibration point where the
sensor output must be high, and press the key
“Readout BOFF”. The result is the corresponding
ADC-READOUT value.
Note: The magnetic south pole on the branded side
generates negative ADC-READOUT values, the
north polarity positive values.
3.4. General Calibration Procedure
For calibration in the system environment, the
application kit from Micronas is recommended. It
contains the hardware for the generation of the serial
telegram for programming and the corresponding
software for the input or calculation of the register
values.
In this section, the programming of the sensor using
this tool is explained. Please refer to Section 5. on
page 24 for information about programming without
this tool.
12
Fig. 3–1 shows the typical characteristics for a
contactless switch. There is a mechanical range where
the sensor must be switched high and where the
sensor must be switched low.
Then, set the system to the calibration point where the
sensor output must be low, press the key “Readout
BON” and get the second ADC-READOUT value.
Now, adjust the hysteresis to the desired value. The
hysteresis is the difference between the switching
points and suppresses oscillation of the output signal.
With 100% hysteresis, the sensor will switch low and
high exactly at the calibration points. A lower value will
adjust the switching points closer together. Fig. 3–1
shows an example with 80% hysteresis.
April 25, 2014; DSH000163_001EN
Micronas
HAL 1002
DATA SHEET
By pressing the key “calibrate and store”, the software
will calculate the corresponding parameters for
Sensitivity, VOQ, Low-Level, High-Level and stores
these values in the EEPROM.
This calibration must be done individually for each
sensor.
Step 1: Input of the registers which need not be
adjusted individually
The register values for the following registers are given
for all sensors in the application:
– FILTER
Select the filter frequency: 500 Hz
The sensor is now calibrated for the customer
application. However, the programming can be
changed again and again if necessary.
– RANGE
Select the magnetic field range: 30 mT
VOUT
– TCSQ
For this magnetic material: 14
Sensor
switched off
Hysteresis
(here 80 %)
Sensor
switched on
position
– TC
For this magnetic material: 6
Enter these values in the software and use the “write
and store” command to store these values
permanently in the registers.
Step 2: Calculation of the Sensor Parameters
Calibration points
Fig. 3–1: Characteristics of a position switch
Set the system to the calibration point where the
sensor output must be high and press “Readout BOFF”.
Step 3: Locking the Sensor
Set the system to the calibration point where the
sensor output must be low and press “Readout BON”.
The last step is activating the LOCK function with the
“lock” key. The sensor is now locked and does not
respond to any programming or reading commands.
Now, adjust the hysteresis to 80% and press the key
“calibrate and store”.
Warning: The LOCK register cannot be reset!
3.5. Example: Calibration of a Position Switch
The following description explains the calibration
procedure using a position switch as an example:
– The mechanical switching points are given.
– temperature coefficient of the magnet: 500 ppm/K
Micronas
Step 3: Locking the Sensor
The last step is activating the LOCK function with the
“LOCK” command. The sensor is now locked and does
not respond to any programming or reading
commands. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall-IC.
Warning: The LOCK register cannot be reset!
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HAL 1002
DATA SHEET
4. Specifications
4.1. Outline Dimensions
A2
E1
Bd
A3
A4
F1
D1
y
Center of sensitive area
1
2
3
L
F2
e
b
Θ
c
physical dimensions do not include moldflash.
0
solderability is guaranteed between end of pin and distance F1.
2.5
5 mm
scale
Sn-thickness might be reduced by mechanical handling.
A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet.
min/max of D1 are specified in the datasheet.
UNIT
A2
A3
b
c
D1
e
E1
F1
F2
L
Θ
mm
1.55
1.45
0.7
0.42
0.36
4.05
1.27
4.11
4.01
1.2
0.8
0.60
0.42
14.5
min
45°
JEDEC STANDARD
ANSI
ISSUE
ITEM NO.
-
-
ISSUE DATE
YY-MM-DD
DRAWING-NO.
ZG-NO.
10-04-29
06615.0001.4
ZG001015_Ver.07
Fig. 4–1:
TO92UT-2 Plastic Transistor Standard UT package, 3 leads
Weight approximately 0.12 g
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Micronas
HAL 1002
DATA SHEET
Fig. 4–2:
TO92UA/UT: Dimensions ammopack inline, not spread
Micronas
April 25, 2014; DSH000163_001EN
15
HAL 1002
DATA SHEET
4.2. Soldering, Welding and Assembly
Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about
solderability, welding, assembly, and second-level packaging. The document is available on the Micronas website or
on the service portal.
4.3. Pin Connections and Short Descriptions
Pin
No.
Pin Name
Short Description
1
VSUP
Supply Voltage and
Programming Pin
2
GND
Ground
3
OUT
Push-Pull Output
and Selection Pin
1
VSUP
OUT
3
2
GND
Fig. 4–3: Pin configuration
4.4. Dimension of Sensitive Area
0.25 mm x 0.25 mm
4.5. Physical Dimensions
TO92UT-1/-2
A4
0.3 mm nominal
Bd
0.3 mm
D1
4.05 mm ± 0.05 mm
H1
min. 22.0 mm
max. 24.1 mm
y
1.5 mm nominal
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HAL 1002
DATA SHEET
4.6. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
Condition
VSUP
Supply Voltage
1
8.5
11
V
t < 96 h3)
VSUP
Supply Voltage
1
16
16
V
t < 1 h3)
VOUT
Output Voltage
3
5
16
V
VOUT  VSUP
Excess of Output Voltage
over Supply Voltage
3,1

2
V
IOUT
Continuous Output Current
3
10
10
mA
tSh
Output Short Circuit Duration
3

10
min
VESD
ESD Protection1)
1
3
8.0
7.5
8.0
7.5
kV
TJ
Junction Temperature under
bias2)
50
190
°C
1)
AEC-Q100-002 (100 pF and 1.5 k)
2) For 96 h - Please contact Micronas for
3)
other temperature requirements
No cumulated stress
Micronas
April 25, 2014; DSH000163_001EN
17
HAL 1002
DATA SHEET
4.6.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for two years from the date code on the package.
4.7. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VSUP
Supply Voltage
1
4.5
5
8.5
V
IOUT
Continuous Output Current
3
1.2

1.2
mA
RL
Load Resistor
3
5.0
10

k
CL
Load Capacitance
3
0.33
100
1000
nF
NPRG
Number of EEPROM Programming Cycles



100
cycles
0°C < Tamb < 55°C
TJ
Junction Temperature
Range1)

40
40
40



125
150
170
°C
°C
°C
for 8000 h2)
for 2000 h2)
for 1000 h2)
1)
2)
18
Condition
Can be pull-up or pulldown resistor (analog
output only)
Depends on the temperature profile of the application. Please contact Micronas for life time calculations.
Time values are not cumulative
April 25, 2014; DSH000163_001EN
Micronas
HAL 1002
DATA SHEET
4.8. Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 8.5 V, after programming and locking of the device,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol
Parameter
Pin No.
IDD
Supply Current
over Temperature Range
1
VOUTH
Output High Voltage
3
VOUTL
Output Low Voltage
3
fADC
Internal ADC Frequency

fADC
Internal ADC Frequency
over Temperature Range
tr(O)
Min.
4.65
Typ.
Max.
Unit
7
10
mA
4.8
Conditions
V
VSUP = 5 V, 1 mA IOUT 1 mA
0.2
0.35
V
VSUP = 5 V, 1 mA IOUT 1 mA
120
128
140
kHz
TJ = 25 °C

110
128
150
kHz
VSUP = 5 V
Response Time of Output
3

5
4
2
1
10
8
4
2
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, time from 10% to 90%
of final output voltage for a steplike
signal Bstep from 0 mT to Bmax
td(O)
Delay Time of Output
3
0.1
0.5
ms
CL = 10 nF
tPOD
Power-Up Time (Time to
reach stabilized Output
Voltage)
6
5
3
2
11
9
5
3
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, 90% of VOUT
BW
Small Signal Bandwidth
(3 dB)
3

2

kHz
BAC < 10 mT;
3 dB Filter frequency = 2 kHz









235
61
159
K/W
measured on a 1s0p board
measured on a 1s0p board
measured on a 1s1p board
bit
including sign bit
Thermal Resistance
Rthja
Rthjc
Rthjs
Junction to Ambient
Junction to Case
Junction to Solder Point
BON_OFF_res
Programming Resolution
BON_OFF_acc
Threshold Accuracy
0.1
+0.1
%
at TJ = 25 °C
based on characterization
BON_OFF_acc
Threshold Accuracy
4
+4
%
over operating temperature range
based on characterization
12
4.9. Magnetic Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 8.5 V, GND = 0 V after programming and locking, at Recommended
Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
BOffset
Magnetic Offset
3
0.5
0
0.5
mT
B = 0 mT, IOUT = 0 mA, TJ = 25 °C,
unadjusted sensor
BOffset
Magnetic Offset Drift
200
0
200
T
B = 0 mT, IOUT = 0 mA
VSUP = 5 V; 60 mT range, 3db
frequency = 500 Hz, TC = 15,
TCSQ = 1, TC-Range = 1
0.65 < sensitivity < 0.65
Micronas
April 25, 2014; DSH000163_001EN
19
HAL 1002
DATA SHEET
5. Application Notes
5.2. Temperature Compensation
5.1. Application Circuit
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.
For EMC protection, it is recommended to connect one
ceramic 100 nF capacitor between ground and the
supply voltage, and between ground and the output
pin.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VSUP line at this time must be able to resist this voltage.
The HAL83x and HAL1002 contain the same temperature compensation circuits. If an optimal setting for the
HAL83x is already available, the same settings may be
used for the HAL1002.
VSUP
OUT
HAL1002
100 nF
GND
Fig. 5–1: Recommended application circuit
For application circuits for high supply voltages, such
as 24 V, please contact the Micronas application service.
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
TC
TCSQ
1075
3
31
7
1000
3
28
1
900
3
24
0
750
3
16
2
675
3
12
2
575
3
8
2
450
3
4
2
400
1
31
0
250
1
24
1
150
1
20
1
50
1
16
2
0
1
15
1
100
1
12
0
200
1
8
1
300
1
4
4
400
1
0
7
500
1
0
0
600
2
31
2
700
2
28
1
800
2
24
3
900
2
20
6
1000
2
16
7
VSUP
R1
OUT
HAL1002
Z1
100 nF
GND
Fig. 5–2: Example for an application circuit for high
supply voltage
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April 25, 2014; DSH000163_001EN
Micronas
HAL 1002
DATA SHEET
Temperature
Coefficient of
Magnet (ppm/K)
TC-Range
TC
TCSQ
1100
2
16
2
1200
2
12
5
1300
2
12
0
1400
2
8
3
1500
2
4
7
1600
2
4
1
1700
2
0
6
1800
0
31
6
1900
0
28
7
2000
0
28
2
2100
0
24
6
2200
0
24
1
2400
0
20
0
2500
0
16
5
2600
0
14
5
2800
0
12
1
2900
0
8
6
3000
0
8
3
3100
0
4
7
3300
0
4
1
3500
0
0
4
5.3. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + T
At static conditions and continuous operation, the following equation applies:
T = I SUP  V SUP  R thJ
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
ISUP and Rth, and the max. value for VSUP from the
application.
For VSUP = 5.5 V, Rth = 235 K/W, and ISUP = 10 mA,
the temperature difference T = 12.93 K.
For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be
calculated as:
T Amax = T Jmax – T
5.4. EMC and ESD
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
Note: The above table shows only some approximate
values. Micronas recommends to use the TCCalc software to find optimal settings for temperature coefficients. Please contact Micronas for
more detailed information.
Micronas
April 25, 2014; DSH000163_001EN
21
HAL 1002
DATA SHEET
6. Programming
tr
tf
VSUPH
6.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with a
serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VSUP-line and the output. The bit time for the
VSUP-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
tp0
logical 0
tp0
or
VSUPL
tp1
VSUPH
tp0
logical 1
VSUPL
or
tp0
tp1
Fig. 6–1: Definition of logical 0 and 1 bit
6.2. Definition of the Telegram
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
There are 4 kinds of telegrams:
– Write a register (see Fig. 6–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
– Read a register (see Fig. 6–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
– Programming the EEPROM cells (see Fig. 6–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 6–5)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors have to be pulled
to ground. With an Activate pulse on the appropriate
output pin, an individual sensor can be selected. All
following commands will only be accepted from the
activated sensor.
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April 25, 2014; DSH000163_001EN
Micronas
HAL 1002
DATA SHEET
Table 6–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
Remarks
VSUPL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VSUPH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise time
1


0.05
ms
tf
Fall time
1


0.05
ms
tp0
Bit time on VSUP
1
1.7
1.75
1.9
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Duty-Cycle Change for logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VSUPPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise time of programming voltage
1
0.2
0.5
1
ms
tfp
Fall time of programming voltage
1
0

1
ms
tw
Delay time of programming voltage after
Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate pulse
3
3
4
5
V
tact
Duration of an Activate pulse
3
0.05
0.1
0.2
ms
Vout,deact
Output voltage after deactivate command
3
0
0.1
0.2
V
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VSUP
Acknowledge
VOUT
Fig. 6–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
DAT
DP
VOUT
Fig. 6–3: Telegram for coding a Read command
Micronas
April 25, 2014; DSH000163_001EN
23
HAL 1002
DATA SHEET
trp
tPROG
tfp
VSUPPROG
ERASE, PROM, and LOCK
Sync
COM
CP
ADR
AP
VSUP
Acknowledge
VOUT
tw
Fig. 6–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 6–5: Activate pulse
Address Parity Bit (AP)
6.3. Telegram Codes
This parity bit is “1” if the number of zeros within the 4
Address bits is uneven. The parity bit is “0” if the number of zeros is even.
Sync Bit
Data Bits (DAT)
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The 14 Data Bits contain the register information.
Command Bits (COM)
The registers use different number formats for the Data
Bits. These formats are explained in Section 6.4.
The Command code contains 3 bits and is a binary
number. Table 6–2 shows the available commands and
the corresponding codes for the HAL 1002.
In the Write command, the last bits are valid. If, for
example, the TC register (10 bits) is written, only the
last 10 bits are valid.
Command Parity Bit (CP)
In the Read command, the first bits are valid. If, for
example, the TC register (10 bits) is read, only the first
10 bits are valid.
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Address Bits (ADR)
The Address code contains 4 bits and is a binary number. Table 6–3 shows the available addresses for the
HAL 1002 registers.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
24
April 25, 2014; DSH000163_001EN
Micronas
HAL 1002
DATA SHEET
Table 6–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all nonvolatile registers (except the lock bits)
ERASE
5
erase all nonvolatile registers (except the lock bits)
6.4. Number Formats
6.5. Register Information
Binary number:
LOW Level
The most significant bit is given as first, the least significant bit as last digit.
– The register range is from 0 up to 255.
– The register value is calculated by:
Example: 101001 represents 41 decimal.
Low-Level Voltage  2
LOW Level = --------------------------------------------------------  255
V SUP
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
0101001 represents +41 decimal
1101001 represents 41 decimal
HIGH Level
– The register range is from 0 up to 511.
– The register value is calculated by:
Two’s-complement number:
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example:
0101001 represents +41 decimal
1010111 represents 41 decimal
High-Level Voltage
HIGH Level = ------------------------------------------------  511
V SUP
VOQ
– The register range is from 1024 up to 1023.
– The register value is calculated by:
V OQ
VOQ = -------------  1024
V SUP
Micronas
April 25, 2014; DSH000163_001EN
25
HAL 1002
DATA SHEET
SENSITIVITY
– The register range is from 8192 up to 8191.
– The register value is calculated by:
MODE = RANGE  512 + SIGNOC  256 + OUTPUTMODE  32 +
FILTER  8 + RANGE  2 + OFFSETCORRECTION
SIGNOC = Sign Offset Correction
SENSITIVITY = Sensitivity  2048
D/A-READOUT
TC
– This register is read only.
– The TC register range is from 0 up to 1023.
– The register range is from 0 up to 16383.
– The register value is calculated by:
DEACTIVATE
TC = GROUP  256 + TCValue  8 + TCSQValue
– This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
MODE
– The register range is from 0 up to 1023 and contains
the settings for FILTER, RANGE, OUTPUTMODE
and OFFSET CORRECTION:
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
Table 6–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
LOW LEVEL
1
8
binary
read/write/program
Low voltage
HIGH LEVEL
2
9
binary
read/write/program
High voltage
VOQ
3
11
two’s compl.
binary
read/write/program
Output quiescent voltage
SENSITIVITY
4
14
signed binary
read/write/program
MODE
5
10
binary
read/write/program
Range, filter, output mode,
Offset Correction settings
LOCKR
6
2
binary
read/write/program
Lock Bit
GP REGISTERS 1..3
8
3x13
binary
read/write/program
1)
D/A-READOUT
9
14
binary
read
Bit sequence is reversed
during read
TC
11
10
binary
read/write/program
bits 0 to 2 TCSQ
bits 3 to 7 TC
bits 7 to 9 TC Range
GP REGISTER 0
12
13
binary
read/write/program
1)
DEACTIVATE
15
12
binary
write
Deactivate the sensor
1)
To read/write this register it is mandatory to read/write all GP register one after the other starting with GP0. In
case of a writing the registers it is necessary to first write all registers followed by one store sequence at the end.
Even if only GP0 should be changed all other GP registers must first be read and the read out data must be written again to these registers.
26
April 25, 2014; DSH000163_001EN
Micronas
HAL 1002
DATA SHEET
Table 6–4: Data formats
Char
DAT3
DAT2
DAT1
DAT0
Register
Bit
15
14
13
12
11
10
09
08
07
06
05
04
03
02
01
00
LOW
LEVEL
Write
Read





V

V

V

V

V

V
V
V
V
V
V

V

V

V

V

V

HIGH
LEVEL
Write
Read





V

V

V

V

V
V
V
V
V
V
V
V
V
V

V

V

V

V

VOQ
Write
Read





V

V

V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

V

V

SENSITIVITY
Write
Read




V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MODE
Write
Read





V

V

V

V
V
V
V
V
V
V
V
V
V
V
V
V
V

V

V

V

LOCKR
Write
Read





V

V




















V

V

GP 1..3
Registers
Write
Read





V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

D/AREADOUT1)
Read


V
V
V
V
V
V
V
V
V
V
V
V
V
V
TC
Write
Read





V

V

V

V
V
V
V
V
V
V
V
V
V
V
V
V
V

V

V

V

GP 0
Register
Write
Read





V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V

DEACTIVATE
Write




1
0
0
0
0
0
0
0
1
1
1
1
V: valid, : ignore, bit order: MSB first
1)
LSB first
Micronas
April 25, 2014; DSH000163_001EN
27
HAL 1002
DATA SHEET
6.6. Programming Information
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands must be zero.
ERASE and PROM act on all registers in parallel.
If all HAL 1002 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
Note: For production and qualification tests it is mandatory to set the LOCK bit after final adjustment
and programming of HAL 1002. The LOCK function is active after the next power-up of the sensor.
The success of the lock process shall be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
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HAL 1002
DATA SHEET
7. Data Sheet History
1. Preliminary Data Sheet “HAL 1002 Highly Precise
Programmable Hall-Effect Switch”, Dec. 13, 2013,
PD000214_001EN. First release of the preliminary
data sheet.
2. Data Sheet “HAL 1002 Highly Precise Programmable Hall-Effect Switch”, April 25, 2014,
DSH000163_001EN. First release of the data sheet.
Major Changes:
– Block diagram updated
– Parameter values for Programming Resolution
and Threshold Accuracy added
Micronas GmbH
Hans-Bunte-Strasse 19  D-79108 Freiburg  P.O. Box 840  D-79008 Freiburg, Germany
Tel. +49-761-517-0  Fax +49-761-517-2174  E-mail: [email protected]  Internet: www.micronas.com
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