HAL® 242x - Micronas

Hardware
Documentation
P rel i m i n a r y D a ta Sh eet
®
HAL 242x
High-Precision Programmable
Linear Hall-Effect Sensor Family
Edition May 3, 2013
PD000211_001E
HAL 242x
PRELIMINARY DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas Trademarks
– HAL
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
military, aviation, or aerospace applications! Unless
explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
2
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
Introduction
Major Applications
Features
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Pin Connections and Short Descriptions
6
6
7
7
7
7
10
12
13
2.
2.1.
2.2.
2.2.1.
2.2.2.
2.2.2.1.
2.2.2.2.
2.2.2.3.
2.2.2.4.
13
14
2.3.
2.4.
Functional Description
General Function
Signal path and Register Definition
Signal path
Register Definition
RAM registers
EEPROM Registers
NVRAM Registers
Setpoint linearization accuracy
(HAL2425 only)
On-Board Diagnostic features
Calibration of the sensor
15
15
19
19
19
19
20
20
21
23
23
24
24
25
26
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.5.1.
3.6.
3.7.
3.8.
3.9.
3.10.
3.11.
3.12.
3.12.1.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
Dimensions of Sensitive Area
Package Parameter and Position of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life TO92UT package
Recommended Operating Conditions
Characteristics
Open-Circuit Detection
Overvoltage and Undervoltage Detection
Output Short Detection Parameter
Output Voltage in Case of Error Detection
Magnetic Characteristics
Definition of Sensitivity Error ES
27
27
27
27
4.
4.1.
4.2.
4.3.
Application Notes
Application Circuit
Use of two HAL 242x in Parallel
Ambient Temperature
28
28
29
29
5.
5.1.
5.2.
5.3.
Programming of the Sensor
Programming Interface
Programming Environment and Tools
Programming Information
30
6.
Data Sheet History
Micronas
May 3, 2013; PD000211_001E
3
HAL 242x
PRELIMINARY DATA SHEET
High-Precision Programmable Linear Hall-Effect
Sensor Family
The calculation of the individual sensor characteristics
and the programming of the EEPROM can easily be
done with a PC and the application kit from Micronas.
1. Introduction
The sensors are designed for hostile industrial and
automotive applications and operate with typically
5 V supply voltage in the junction temperature range
from 40 °C up to 170 °C. The HAL 242x is available
in the very small leaded package TO92UT-1/-2.
HAL 242x is a new family of Micronas’ programmable
linear Hall-effect sensors. This family consists of two
members: the HAL 2420 and the HAL 2425.
Both devices are universal magnetic field sensors with
a linear output based on the Hall effect. Major characteristics like magnetic field range, sensitivity, output
quiescent voltage (output voltage at B=0 mT), and output voltage range are programmable in a non-volatile
memory. The sensors have a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the supply voltage.
Additionally, both sensors offer wire-break detection.
The HAL 2425 offers 16 setpoints to change the output
characteristics from linear to arbitrary or vice versa.
Due to the sensor’s versatile programming characteristics and low temperature drifts, the HAL 242x is the
optimal system solution for applications such as:
– contact less potentiometers,
– angle sensors (like throttle position, paddle position
and EGR applications),
– distance and linear movement measurements,
– magnetic field and current measurement.
1.2. Features
Table 1–1: Family member overview
– high-precision linear Hall-effect sensor with 12-bit
analog output
Device
Key Function
HAL 2420
2 Setpoints (calibration points)
– 16 setpoints for various output signal shapes
(HAL 2425 only)
HAL 2425
16 Setpoints
– 16 bit digital signal processing
The HAL 242x features a temperature-compensated
Hall plate with spinning current offset compensation,
an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM with redundancy
and lock function for calibration data, a serial interface
for programming the EEPROM, and protection devices
at all pins. The internal digital signal processing is of
great benefit because analog offsets, temperature
shifts, and mechanical stress do not degrade digital
signals.
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the final manufacturing process is possible. With this calibration
procedure, the tolerances of the sensor, the magnet,
and the mechanical positioning can be compensated
in the final assembly.
In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by programming first- and second-order temperature coefficients of the Hall sensor sensitivity.
It is also possible to compensate offset drift over temperature generated by the customer application with a
first-order temperature coefficient for the sensors offset. This enables operation over the full temperature
range with high accuracy.
4
1.1. Major Applications
– multiple customer-programmable magnetic characteristics in a non-volatile memory with redundancy
and lock function
– programmable temperature compensation for sensitivity and offset
– magnetic field measurements in the range up to
200 mT
– low output voltage drifts over temperature
– active open-circuit (ground and supply line break
detection) with 5 k pull-up and pull-down resistor,
overvoltage and undervoltage detection
– programmable clamping function
– digital readout of temperature and magnetic field
information in calibration mode
– programming and operation of multiple sensors at
the same supply line
– active detection of output short between two sensors
– high immunity against mechanical stress, ESD, and
EMC
– operates from TJ =40 °C up to 170 °C
– operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
– operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– overvoltage and reverse-voltage protection at all pins
– short-circuit protected push-pull output
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
1.3. Marking Code
1.6. Pin Connections and Short Descriptions
The HAL 242x has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
Marking
A
HAL 2420
2420A
HAL 2425
2425A
Pin
No.
Pin Name
Type
Short Description
1
VSUP
SUPPLY
Supply Voltage
2
GND
GND
Ground
3
OUT
I/O
Push-Pull Output
and Programming
Pin
1
VSUP
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
OUT
Pin 3
A: TJ = 40 °C to +170 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.3.
on page 27.
2
GND
Fig. 1–1: Pin configuration
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: A
Package:
UT for TO92UT-1/-2
Type: 2420 or 2425
Example: HAL2425UT-A
 Type:
 Package:
 Temperature Range:
2425
TO92UT-1/-2
TJ = 40 °C to +170 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors: Ordering Codes.
Micronas
May 3, 2013; PD000211_001E
5
HAL 242x
PRELIMINARY DATA SHEET
In the supply voltage range from 4.5 V up to 5.5 V, the
sensor generates an analog output voltage. After
detecting a command, the sensor reads or writes the
memory and answers with a digital signal on the output
pin. The analog output is switched off during the communication. Several sensors in parallel to the same
supply and ground line can be programmed individually. The selection of each sensor is done via its output
pin.
2. Functional Description
2.1. General Function
The HAL 242x is a monolithic integrated circuit which
provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers, converted back to an analog voltage with ratiometric behavior, and buffered by a push-pull output
transistor stage.
The open-circuit detection provides a defined output
voltage if the VSUP or GND line is broken.
Internal temperature compensation circuitry and the
choppered offset compensation enable operation over
the full temperature range with minimal changes in
accuracy and high offset stability. The circuitry also
reduces offset shifts due to mechanical stress from the
package. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
The setting of a LOCK bit disables the programming of
the EEPROM memory for all time. This bit cannot be
reset by the customer.
As long as the LOCK bit is not set, the output characteristic can be adjusted by programming the EEPROM
registers. The IC is addressed by modulating the output voltage.
VSUP
Internally
Stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
Temperature
Sensor
A/D
Converter
Open-circuit,
Overvoltage,
Undervoltage
Detection
Linearization
16 Setpoints
EEPROM Memory
D/A
Converter
Protection
Devices
Analog
Output
IO
Programming
Interface
Lock Control
GND
Fig. 2–1: HAL 242x block diagram
6
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
2.2. Signal path and Register Definition
2.2.1. Signal path
D
Output
Clamping
A
(Magnetic Ranges)
Hall-Plate
Barrel Shifter
CFX
MIC_COMP
Micronas
Offset & Gain
Trimming
CUST_COMP
Customer
Offset & Gain
Trimming
Gain & Offset
Scaling block
SETPT_IN
SETPT
Setpoint
Linearization
DAC Gain
& Offset
Scaling
Only available with HAL2425
TEMP_ADJ
-C-
Micronas
Temp-Sensor
Trimming
DAC Drift
Compensation
Output
Clamping
DAC
GAINOFF
Temp-Sensor
DAC
Fig. 2–2: Signal path of HAL 242x
2.2.2. Register Definition
CFX
The DSP is the major part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–2 and Fig. 2–3.
The CFX register is representing the magnetic field
information directly after A/D conversion, decimation
filter and magnetic range (barrel shifter) selection. The
register content is not temperature compensated. The
temperature variation of this register is specified in
Section 3.12. on page 25 by the parameter RANGEABS.
Terminology:
GAIN: Name of the register or register value
Gain: Name of the parameter
The sensors signal path contains two kinds of registers. Registers that are readout only (RAM) and programmable registers (EEPROM & NVRAM). The RAM
registers contain measurement data at certain positions of the signal path and the EEPROM registers
have influence on the sensors signal processing.
2.2.2.1. RAM registers
Note: During application design, it must be taken into
consideration that CFX should never overflow in
the operational range of the specific application
and especially over the full temperature range.
In case of a potential overflow the barrel shifter
should be switched to the next higher range.
This register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary
between 32768...32767. CFX register values will
increase for positive magnetic fields (south pole) on
the branded side of the package (positive CFX values)
and it will decrease with negative magnetic field polarity.
TEMP_ADJ
MIC_COMP
The TEMP_ADJ register contains the calibrated temperature sensor information. TEMP_ADJ can be used
for the sensor calibration over temperature. This register has a length of 16 bit and it is two’s-complement
coded. Therefore the register value can vary between
32768...32767.
Micronas
The MIC_COMP register is representing the magnetic
field information directly after the Micronas temperature trimming. The register content is temperature compensated and has a typical gain drift over temperature
of 0 ppm/k. Also the offset and its drift over temperature is typically zero. The register has a length of 16 bit
and it is two’s-complement coded. Therefore the register value can vary between 32768...32767.
May 3, 2013; PD000211_001E
7
HAL 242x
PRELIMINARY DATA SHEET
CUST_COMP
DAC
The CUST_COMP register is representing the magnetic field information after the customer temperature
trimming. For HAL 242x it is possible to set a customer
specific gain of second order over temperature as well
as a customer specific offset of first order over temperature. The customer gain and offset can be set with the
EEPROM registers TCCO0, TCCO1 for offset and
TCCG0...TCCG2 for gain. Details of these registers
are described on the following pages.
The DAC register offers the possibility to read the magnetic field information at the end of the complete signal
path. The value of this register is then converted into
an analog output voltage.
The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary
between 32768...32767.
MIC_ID1 and MIC_ID2
SETPT_IN (HAL2425 only)
The SETPT_IN register offers the possibility to read
the magnetic field information after the scaling of the
input signal to the input range of the linearization block.
For further details see the description of the EEPROM
registers SCALE_GAIN and SCALE_OFFSET that are
described in the next chapter.
The register has a length of 16 bit and it is two’s-complement coded. Therefor the register value can vary
between 32768...32767.
SETPT (HAL2425 only)
The SETPT register offers the possibility to read the
magnetic field information after the linearization of the
magnetic field information with 16 setpoints. This information is also required for the correct setting of the
sensors DAC GAIN and OFFSET in the following
block.
The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary
between 32768...32767.
The register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary
between 32768...32767.
The two registers MIC_ID1 and MIC_ID2 are used by
Micronas to store production information like, wafer
number, die position on wafer, production lot, etc. Both
registers have a length of 16 bit each and are readout
only.
DIAGNOSIS
The DIAGNOSIS register enables the customer to
identify certain failures detected by the sensor.
HAL 242x performs certain self tests during power-up
of the sensor and also during normal operation. The
result of these self tests is stored in the DIAGNOSIS
register. DIAGNOSIS register is a 16 bit register.
Bit no.
Function
Description
15:6
None
Reserved
5
State Machine
(DSP) Self test
This bit is set to 1 in case that the
statemachine self test fails.
(continuously running)
4
EEPROM Self test
This bit is set to 1 in case that the
EEPROM self test fails.
(Performed during power-up only)
3
ROM Check
This bit is set to 1 in case that
ROM parity check fails.
(continuously running)
2
AD converter
overflow
This bit is set to 1 in case the input
signal is too high, indicating a
problem with the magnetic range.
1:0
None
Reserved
GAINOFF
The GAINOFF register offers the possibility to read the
magnetic field information after the DAC GAIN and
OFFSET scaling.
This register has a length of 16 bit and it is two’s-complement coded. Therefore the register value can vary
between 32768...32767.
8
Details on the sensor self tests can be found in
Section 2.3. on page 13.
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
PROG_DIAGNOSIS
The PROG_DIAGNOSIS register enables the customer to identify errors occurring during programming
and writing of the EEPROM or NVRAM memory. The
customer must either check the status of this register
after each write or program command or alternatively
the second acknowledge. Please check the Programming Guide for HAL 242x.
The PROG_DIAGNOSIS register is a 16 bit register.
The following table shows the different bits indicating
certain errors possibilities.
Bit no.
Function
Description
15:11
None
Reserved
10
Charge Pump
Error
This bit is set to 1 in case that the
internal programming voltage was
to low
9
Voltage Error
during Program/
Erase
This bit is set to 1 in case that the
internal supply voltage was to low
during program or erase
8
NVRAM Error
This bit is set to 1 in case that the
programming of the NVRAM failed
7:0
Programming
These bits are used for
programming the memory
Micronas
May 3, 2013; PD000211_001E
9
HAL 242x
PRELIMINARY DATA SHEET
2.2.2.2. EEPROM Registers
EEPROM
A
D
(Magnetic Ranges)
Barrel Shifter
Hall-Plate
SCALE_GAIN
SCALE_OFFSET
SETPOINTx
TCCOx
TCCGx
CUSTOMER SETUP
DAC_GAIN
DAC_OFFSET
HAL2425 only
Micronas
Offset & Gain
Trimming
Customer
Offset & Gain
Trimming
Offset & Gain
Scaling
Setpoint
Linearization
DAC Gain
& Offset
Scaling
Digital Signal Processing
Temp-Sensor
-C-
Micronas
Temp-Sensor
Trimming
DAC Drift
Compensation
Output
Clamping
DAC
DAC_CMPLO
DAC_CMPHI
Fig. 2–3: Details of EEPROM and Digital Signal Processing
Table 2–1: Relation between Barrel Shifter setting and
emulated magnetic range
CUST_ID1 and CUST_ID2
The two registers CUST_ID1 and CUST_ID2 can be
used to store customer information. Both registers
have a length of 16 bit each.
Barrel Shifter (Magnetic ranges)
The signal path of HAL 242x contains a Barrel Shifter
to emulate magnetic ranges. The customer can select
between different magnetic ranges by changing the
Barrel shifter setting. After decimation filter the signal
path has a word length of 22 bit. The Barrel Shifter
selects 16 bit out of the available 22 bit.
Table 2–1: Relation between Barrel Shifter setting and
emulated magnetic range
BARREL SHIFTER
Used bits
Typ. magnetic range
0
22...7
not used
1
21...6
200 mT
2
20...5
100 mT
3
19...4
 50 mT
4
18...3
 25 mT
10
BARREL SHIFTER
Used bits
Typ. magnetic range
5
17...2
12 mT
6
16...1
 6 mT
The Barrel Shifter bits are part of the CUSTOMER
SETUP register (bits 14...12). The CUSTOMER
SETUP register is described on the following pages.
Note: In case that the external field exceeds the magnetic field range the CFX register will be
clamped either to 32768 or 32767 depending
on the sign of the magnetic field.
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
Magnetic Sensitivity TCCG
The TCCG (Sensitivity) registers (TCCG0...TCCG2)
contain the customer setting temperature dependant
gain factor. The multiplication factor is a second order
polynomial of the temperature.
All three polynomial coefficients have a bit length of 16
bit and they are two’s-complement coded. Therefore
the register values can vary between 32768...32767.
In case that the target polynomial is based on normalized values, then each coefficient can vary between
1 ... +1. To store each coefficient into the EEPROM it
is necessary to multiply the normalized coefficients
with 32768.
Example:
– Tccg0 = 0.5102 => TCCG0 = 16719
– Tccg1 = 0.0163 => TCCG1 = 536
– Tccg2 = 0.0144 => TCCG2 = 471
In case that the polynomial was calculated based on
not normalized values of TEMP_ADJ and MIC_COMP,
then it is not necessary to multiply the polynomial coefficients with a factor of 32768.
Magnetic Sensitivity TCCO
The TCCO (Offset) registers (TCCO0 and TCCO1)
contain the parameters for temperature dependant offset correction. The offset value is a first order polynomial of the temperature.
Both polynomial coefficients have a bit length of 16 bit
and they are two’s-complement coded. Therefore the
register values can vary between 32768...32767.
In case that the target polynomial is based on normalized values, then each coefficient can vary between 
1 ... +1. To store each coefficient into the EEPROM it is
necessary to multiply the normalized coefficients with
32768.
Sensitivity and Offset Scaling before setpoint linearization SCALE_GAIN/SCALE_OFFSET
(HAL2425 only)
The setpoint linearization uses the full 16 bit number
range 0...32767 (only positive values possible). So the
signal path should be properly scaled for optimal
usage of all 16 setpoints.
For optimum usage of the number range an additional
scaling stage is added in front of the set point algorithm. The setpoint algorithm allows positive input
numbers only.
The input scaling for the linearization stage is done
with the EEPROM registers SCALE_GAIN and
SCALE_OFFSET. The register content is calculated
based on the calibration angles. Both registers have a
bit length of 16 bit and are two’s-complemented coded.
Analog output signal scaling with DAC_GAIN/
DAC_OFFSET
The required output voltage range of the analog output
is defined by the registers DAC_GAIN (Gain of the output) and DAC_OFFSET (Offset of the output signal).
Both register values can be calculated based on the
angular range and the required output voltage range.
They have a bit length of 16 bit and are two’s-complemented coded.
Clamping Levels
The clamping levels DAC_CMPHI and DAC_CMPLO
define the maximum and minimum output voltage of
the analog output. The clamping levels can be used to
define the diagnosis band for the sensor output. Both
registers have a bit length of 16 bit and are two’s-complemented coded. Both clamping levels can have values between 0% and 100% of VSUP.
In case that the polynomial was calculated based on
not normalized values of TEMP_ADJ and MIC_COMP,
then it is not necessary to multiply the polynomial coefficients.
In addition HAL2425 features a linearization function
based on 16 setpoints. The setpoint linearization in
general allows to linearize a given output characteristic
by applying the inverse compensation curve.
Each of the 16 setpoints (SETPT) registers have a
length of 16 bit. The setpoints have to be computed
and stored in a differential way. This means that if all
setpoints are set to 0, then the linearization is set to
neutral and a linear curve is used.
Micronas
May 3, 2013; PD000211_001E
11
HAL 242x
PRELIMINARY DATA SHEET
2.2.2.3. NVRAM Registers
Customer Setup
The CUST_SETUP register is a 16 bit register that
enables the customer to activate various functions of
the sensor like, customer burn-in mode, diagnosis
modes, functionality mode, customer lock, etc.
Table 2–2: Functions in CUST_SETUP register
Bit no.
Function
Description
15
None
Reserved
14:12
Barrel Shifter
Magnetic Range
(see Section Table 2–1: on
page 10)
11:10
None
Reserved
9:8
Output Short
Detection
0: Disabled
1: High & low side over current
detection -> OUT = VSUP in error
case
2: High & low side over current
detection -> OUT = GND in error
case
3: Low side over current detection
-> OUT = Tristate in error case
7
Error Band
Error band selection for locked
devices (Customer Lock bit set).
The Output Short Detection feature is implemented to
detect an short circuit between two sensor outputs.
The customer can define how the sensor should signalize a detected short circuit (see table above). The
time interval in which the sensor is checking for an output short and the detectable short circuit current are
defined in Section 3.10. on page 24.
This feature should only be used in case that two sensors are used in one module. In case that the Output
Short Detection is not active both sensors will try to
drive their output voltage and the resulting voltage will
be within the valid signal band.
Note: The Output Short Detection feature is only
active after setting the Customer Lock bit and a
power-on reset.
0: High error band (VSUP)
1: Low error band (GND)
The sensor will always go to high
error band as long as it is not
locked (Customer Lock bit not set).
(see Section 3.11. on page 24)
6
None
Reserved
5
Functionality Mode
1: Normal
4
Communication
Mode (POUT)
Communication via output pin
0: Disabled
1: Enabled
3
Overvoltage
Detection
0: Overvoltage detection active
1: Overvoltage detection disabled
2
Diagnosis Latch
Latching of diagnosis bits
0: No latching
1: Latched till next POR (power-on
reset)
1
Diagnosis
0: Diagnosis errors force output to
the selected error band
1: Diagnosis errors do not force
output to the selected error band
0
12
Customer Lock
Bit must be set to 1 to lock the
sensor memory
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
2.2.2.4. Setpoint linearization accuracy
(HAL2425 only)
The set point linearization in general allows to linearize
a given output characteristic by applying the inverse
compensation curve.
For this purpose the compensation curve will be
divided into 16 segments with equal distance. Each
segment is defined by two setpoints, which are stored
in EEPROM. Within the interval, the output is calculated by linear interpolation according to the position
within the interval.
The constraint of the linearization is that the input characteristic has to be a monotonic function. In addition to
that it is recommended that the input does not have a
saddle point or inflection point, i.e. regions where the
input is nearly constant. This would require a high density of set points
2.3. On-Board Diagnostic features
The HAL 242x features two groups of diagnostic functions. The first group contains basic functions that are
always active. The second group can be activated by
the customer and contains supervision and self-tests
related to the signal path and sensor memory.
4
4
x 10
Diagnostic features that are always active:
3
– Wire break detection for supply and ground line
2
– Undervoltage detection
1
– Thermal supervision of output stage (overcurrent,
short circuit, etc.)
0
-1
Diagnostic features that can be activated by customer:
-2
Linearized
Distorted
Compensation
-3
– Overvoltage detection
– EEPROM self-test at power-on
-4
-4
-3
-2
-1
0
1
2
3
4
4
x 10
– Continuous ROM parity check
– Continuous state machine self-test
Fig. 2–4: Linearization - Principle
– Adder overflow
output
The sensor indicates a fault immediately by switching
the output signal to the selected error band in case that
the diagnostic mode is activated by the customer. The
customer can select if the output goes to the upper or
lower error band by setting bit number 7 in the
CUST_SETUP register (Table 2–2 on page 12). Further details can be found in Section 3.11. on page 24.
ysn+1
yl
ysn

xsn xnl
The sensor switches the output to tristate if an over
temperature is detected by the thermal supervision.
The sensor switches the output to ground in case of a
VSUP wire break.
xsn+1
input
Fig. 2–5: Linearization - Detail
xnl: non linear distorted input value
yl: linearized value
 remaining error
Micronas
May 3, 2013; PD000211_001E
13
HAL 242x
PRELIMINARY DATA SHEET
2.4. Calibration of the sensor
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming (HAL-APB V1.5) and the corresponding
LabView based programming environment for the input
of the register values.
For the individual calibration of each sensor in the customer application, a two point calibration is recommended.
A detailed description of the calibration software, calibration algorithm, programming sequences and register value calculation can be found in the Application
Note “HAL 242x Programming Guide”.
14
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
TO92UT-2 Plastic Transistor Standard UT package, 3 leads
Weight approximately 0.12 g
Micronas
May 3, 2013; PD000211_001E
15
HAL 242x
PRELIMINARY DATA SHEET
Fig. 3–2:
TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
16
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
Fig. 3–3:
TO92UT-2: Dimensions ammopack inline, not spread
Micronas
May 3, 2013; PD000211_001E
17
HAL 242x
PRELIMINARY DATA SHEET
Fig. 3–4:
TO92UT-1: Dimensions ammopack inline, spread
18
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
3.2. Soldering, Welding and Assembly
Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about
solderability, welding, assembly, and second-level packaging. The document is available on the Micronas website or
on the service portal.
3.3. Dimensions of Sensitive Area
250 x 250 μm
3.4. Package Parameter and Position of Sensitive
Areas
TO92UT-1/-2
A4
0.4 mm nominal
Bd
0.3 mm
D1
4.05 mm ± 0.05 mm
H1
min. 22.0 mm
max. 24.1 mm
y
1.55 mm nominal
3.5. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
Condition
VSUP
Supply Voltage
1
8.5
18
10
18
V
V
t < 96 h
t<1h
Time values are not additive
VOUT
Output Voltage
3
61)
18
V
t<1h
VOUT  VSUP
Excess of Output Voltage
over Supply Voltage
3,1

2
V
TJ
Junction Temperature
under Bias
50
1902)
°C
VESD
ESD Protection
8.03)
8.03)
kV
1 or 3
1) internal protection resistor = 50 
2)
For 96h, please contact Micronas
3)
for other temperature requirements.
AEC-Q-100-002 (100 pF and 1.5 k)
Micronas
May 3, 2013; PD000211_001E
19
HAL 242x
PRELIMINARY DATA SHEET
3.5.1. Storage and Shelf Life TO92UT package
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for two years from the date code on the package.
3.6. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Remarks
VSUP
Supply Voltage
1
4.5
5.7
5
6
5.5
6.5
V
Normal operation
During programming
IOUT
Continuous Output Current
3
1.2

1.2
mA
RL
Load Resistor
3
5.0
10

k
CL
Load Capacitance
3
0.33
47
600
nF
NPRG
Number of Memory Programming Cycles1)



100
cycles
0°C < Tamb < 55°C
TJ
Junction Temperature2)

40
40
40

125
150
170
°C
for 8000 h
for 2000 h
for 1000 h
Time values are not additive
Can be pull-up or pull-down
resistor
1)
In the EEPROM, it is not allowed to program only one single address within a 'bank' in the memory. In case of
programming one single address the complete bank has to be programmed
2)
Depends on the temperature profile of the application. Please contact Micronas for life time calculations. Time
values are not additive
20
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
3.7. Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
ISUP
Supply Current
over Temperature Range
1

7
10
mA
Resolution6)
3

12

bit
ratiometric to VSUP 1)
DNL
Differential Non-Linearity of D/A
Converter4)
3
0.9
0
0.9
LSB
Test limit at 25 °C ambient
temperature
INL
Non-Linearity of Output Voltage
over Temperature7)
3
0.3
0
0.3
%VSUP 2)For Vout = 0.35 V ... 4.65 V;
TJ=25 °C
VSUP = 5 V ; Linear Setpoint
Characteristics
INLSIN
Non-Linearity of Output Voltage7) 3
2.4
0
2.4
%VSUP 2)For Vout = 0.35 V ... 4.65 V;
VSUP = 5 V ; Ideal sinusoidal
magnetic field as input signal in
the angular range of 85°
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VSUP)
3
0.25
0
0.25
%
Voffset
Offset Drift over Temperature
Range7)
VOUT(B = 0 mT)25°C
 VOUT(B = 0 mT)max
3
0
0.1
0.2
%VSUP VSUP = 5 V ; BARREL SHIFTER =
3 (±50 mT)
VOUTCL
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range6)
3
11
0
11
mV
VOUTCH
Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range6)
3
11
0
11
mV
VOUTH
Upper Limit of Signal Band3)
3
93


%VSUP
VSUP = 5 V, 1 mA IOUT 1 mA
VOUTL
Lower Limit of Signal
Band3)
3


7
%VSUP
VSUP = 5 V, 1 mA IOUT 1 mA
fOSC
Internal Oscillator Frequency
over Temperature Range


4

MHz
Max of [VOUT5  VOUT4.5 and
VOUT5.5  VOUT5] at VOUT = 10%
and 90% VSUP
RL = 5 k, VSUP = 5 V
Spec values are derived from
resolution of the registers
DAC_CMPHI/LO and Voffset.
1)
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096
2)
if more than 50% of the selected magnetic field range is used and the temperature compensation is suitable.
INL = VOUT - VOUTLSF with VOUTLSF = Least Square Fit through measured output voltage
3)
Signal Band Area with full accuracy is located between VOUTL and VOUTH. The sensor accuracy is reduced below VOUTL and
above VOUTH
4)
External package stress or overmolding might change this parameter
5)
5% might exceed limit. Definition: 5 out of 100 continuously measured VOUT samples are out of limit
6)
Guaranteed by Design
7)
Characterized on small sample size, not tested
Micronas
May 3, 2013; PD000211_001E
21
HAL 242x
PRELIMINARY DATA SHEET
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
tr(O)
Step Response Time of Output7)
3

0.5
0.6
ms
CL = 10 nF, time from 10% to 90%
of final output voltage for a step
like signal Bstep from 0 mT to Bmax
tPOD
Power-Up Time (Time to Reach
Certain Output Accuracy)7)
3




1.7
8.0
ms
ms
Additional error of 1% Full-Scale
Full accuracy
BW
Small Signal Bandwidth
(3 dB)7)
3

2

kHz
VOUTnpp
Peak-Peak Output Noise
Voltage7)
3


4.5
mV
5)
ROUT
Output Resistance over
3
Recommended Operating Range

1
10

VOUTLmax VOUT VOUTHmin
BARREL SHIFTER = 4
(±25 mT);
C = 10 nF (VSUP & VOUT to GND)
TO92UT Package
Thermal Resistance
Rthja
Junction to Air



235
K/W
Measured with a 1s0p board
Rthjc
Junction to Case



61
K/W
Measured with a 1s0p board
Rthjs
Junction to Solder Point



128
K/W
Measured with a 1s1p board
1)Output
DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VSUP/4096
2)if
more than 50% of the selected magnetic field range is used and the temperature compensation is suitable.
INL = VOUT - VOUTLSF with VOUTLSF = Least Square Fit through measured output voltage
3) Signal Band Area with full accuracy is located between V
OUTL and VOUTH. The sensor accuracy is reduced below VOUTL and
above VOUTH
4)
External package stress or overmolding might change this parameter
5)
5% might exceed limit. Definition: 5 out of 100 continuously measured VOUT samples are out of limit
6) Guaranteed
by Design
7) Characterized
22
on small sample size, not tested
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
3.8. Open-Circuit Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Comment
VOUT
Output Voltage at Open
VSUP Line
3
0
0
0.15
V
VSUP = 5 V
RL = 10 kto 200 k
0
0
0.2
V
VSUP = 5 V
RL = 5 kto 10 k
4.85
4.9
5.0
V
VSUP = 5 V
RL = 10 kto 200 k
4.8
4.9
5.0
V
VSUP = 5 V
RL = 5 kto 10 k
VOUT
Output Voltage at Open
GND Line
3
RL: Can be pull-up or pull-down resistor
3.9. Overvoltage and Undervoltage Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VSUP,UV
Undervoltage Detection
Level
1
3.3
3.9
4.3
V
VSUP,UVhyst Undervoltage Detection
Level Hysteresis1)
1

200

mV
VSUP,OV
Overvoltage Detection
Level
1
5.6
6.2
6.9
V
VSUP,OVhyst Overvoltage Detection
Level
Hysteresis1)
1

225

mV
Test Conditions
1) Characterized on small sample size, not tested
Micronas
May 3, 2013; PD000211_001E
23
HAL 242x
PRELIMINARY DATA SHEET
3.10.Output Short Detection Parameter
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
tOCD
Over Current Detection
Time1)
3

128

μs
tTimeout
Time Period without Over
Current Detection1)
3

256

ms
IOVC
Detectable Output Short
Current1)
3

10

mA
1) Characterized
Test Conditions
on small sample size, not tested
Please see Table 2–2 on page 14 for further details.
3.11. Output Voltage in Case of Error Detection
at TJ = 40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after programming and locking
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
VSUP,DIAG
Supply Voltage required to
get defined Output Voltage
Level1)
1

2.1

V
VError,Low
Output Voltage Range of
Lower Error Band1)
3
0

4
%VSUP
VSUP > VSUP,DIAG
5 k >= RL <= 200 k
VError,High
Output Voltage Range of
Upper Error Band1)
3
96

100
%VSUP
VSUP > VSUP,DIAG
5 k >= RL <= 200 k
1) Characterized
Test Conditions
on small sample size, not tested
Vout [V]
VSUP,DIAG
VSUP,UV
5
VSUP,OV
VSUP [V]
: Output Voltage will be between VSUP and GND
: CUST_SETUP Register Bit no. 7 set to 1  VOUT  4% VSUP
: CUST_SETUP Register Bit no. 7 set to 0  VOUT  96% VSUP
Fig. 3–5: Behavior of HAL 242x for different VSUP
24
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
3.12. Magnetic Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol
Parameter
Pin
No.
Min.
Typ.
Max.
Unit
Test Conditions
SENS
Magnetic Sensitivity



170
mV/
mT
Programmable VSUP = 5 V and TJ =
25 °C; BARREL SHIFTER=
±12 mT Vout = 4 V

100
200
235
%
See Section 2.2. on page 7 for CFX
register definition.
RANGEABS Absolute Range of CFX
Register (Magnetic
Range)1)
BOffset
Magnetic Offset1)
3
0.4
0
0.4
mT
B = 0 mT, IOUT = 0 mA, TJ = 25 °C,
unadjusted sensor
BOffset/T
Magnetic Offset Change
due to TJ1)
3
5
0
5
T/K
B = 0 mT, IOUT = 0 mA
BARREL SHIFTER = 3 (±50 mT)
ES
Error in Magnetic Sensitivity
3
1
0
1
%
VSUP = 5 V
BARREL SHIFTER = 3 (±50 mT)
1) Characterized on small sample size, not tested
Micronas
May 3, 2013; PD000211_001E
25
HAL 242x
PRELIMINARY DATA SHEET
3.12.1. Definition of Sensitivity Error ES
ES is the maximum of the absolute value of 1 minus
the quotient of the normalized measured value1) over
the normalized ideal linear2) value:
ES = max  abs  meas
------------ – 1 
  ideal

 Tmin, Tmax 
In the below example, the maximum error occurs at
°C:
10
ES = 1.001
------------- – 1 = 0.8%
0.993
1) normalized to achieve a least-square-fit straight-line
that has a value of 1 at 25 °C
2) normalized to achieve a value of 1 at 25 °C
ideal 200 ppm/k
1.03
relative sensitivity related to 25 °C value
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
1.02
1.01
1.001
1.00
0.993
0.99
0.98
–50
–25
-10
0
25
50
75 100
temperature [°C]
125
150
175
Fig. 3–6: ES definition example
26
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
4. Application Notes
4.3. Ambient Temperature
4.1. Application Circuit
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
For EMC protection, it is recommended to connect one
ceramic 47 nF capacitor each between ground and the
supply voltage, respectively the output voltage pin.
T J = T A + T
VSUP
47 nF
OUT
At static conditions and continuous operation, the following equation applies:
GND
T = I SUP  V SUP  R thjx
HAL242x
47 nF
Fig. 4–1: Recommended application circuit
4.2. Use of two HAL 242x in Parallel
Two different HAL 242x sensors which are operated in
parallel to the same supply and ground line can be programmed individually as the communication with the
sensors is done via their output pins.
VSUP
OUT A
47 nF
HAL242x
Sensor A
47 nF
HAL242x
Sensor B
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
ISUP and Rthjx (x is representing the different Rth value,
like junction to ambient Rthja), and the max. value for
VSUP from the application.
For VSUP = 5.5 V, Rth = 235 K/W, and ISUP = 10 mA,
the temperature difference T = 12.93 K.
For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be
calculated as:
OUT B
T Amax = T Jmax – T
47 nF
GND
Fig. 4–2: Parallel operation of two HAL 242x
Micronas
May 3, 2013; PD000211_001E
27
HAL 242x
PRELIMINARY DATA SHEET
5. Programming of the Sensor
tbittime
HAL 242x features two different customer modes. In
Application Mode the sensor provides a ratiometric
analog output voltage. In Programming Mode it is
possible to change the register settings of the sensor.
tbittime
or
logical 0
After power-up the sensor is always operating in the
Application Mode. It is switched to the Programming
Mode by a pulse on the sensor output pin.
tbittime
tbittime
or
5.1. Programming Interface
logical 1
In Programming Mode the sensor is addressed by
modulating a serial telegram on the sensors output pin.
The sensor answers with a modulation of the output
voltage.
50%
50%
50%
50%
Fig. 5–1: Definition of logical 0 and 1 bit
A logical “0” is coded as no level change within the bit
time. A logical “1” is coded as a level change of typically 50% of the bit time. After each bit, a level change
occurs (see Fig. 5–1).
A description of the communication protocol and the
programming of the sensor is available in a separate
document (Application: HAL 242x Programming
Guide).
The serial telegram is used to transmit the EEPROM
content, error codes and digital values of the angle
information from and to the sensor.
Table 5–1: Telegram parameters (All voltages are referenced to GND.)
Symbol
VOUTL
VOUTH
Parameter
Voltage for Output Low Level
during Programming through
Sensor Output Pin
Pin No. Limit Values
3
Voltage for Output High Level 3
during Programming through
Sensor Output Pin
Unit Test Conditions
Min.
Typ.
Max.
0

0.2*VSUP V
0
1
V
0.8*VSUP 
VSUP
V
4

5.0
V
for VSUP = 5 V
Supply voltage for
bidirectional communication via output pin.
VSUPProgram VSUP Voltage for EEPROM
programming (after PROG
and ERASE)
1
5.7
6.0
6.5
V
tbittime
Biphase Bit Time
3
900
1000
1100
μs
Slew rate
3

2

V/μs
28
for VSUP = 5 V
May 3, 2013; PD000211_001E
Micronas
HAL 242x
PRELIMINARY DATA SHEET
5.2. Programming Environment and Tools
For the programming of HAL 242x during product
development and also for production purposes a programming tool including hardware and software is
available on request. It is recommended to use the
Micronas tool kit (HAL-APB V1.x & Lab View Programming Environment) in order to easy the product development. The details of programming sequences are
also available on request.
Note: For production HAL-APB V1.5 or higher must be
used.
5.3. Programming Information
For reliability in service, it is mandatory to set the
LOCK bit to one and the POUT bit to zero after final
adjustment and programming of HAL 242x.
The success of the LOCK process should be checked
by reading the status of the LOCK bit after locking and
by a negative communication test after a power on
reset.
It is also mandatory to check the acknowledge (first
and second) of the sensor or to read/check the status
of the PROG_DIAGNOSIS register after each write
and store sequence to verify if the programming of the
sensor was successful. Please check HAL 242x Programming Guide for further details.
Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against
ESD.
Note: Please check also the “HAL242x Programming
Guide”. It contains additional information and
instructions about the programming of the
devices.
Micronas
May 3, 2013; PD000211_001E
29
HAL 242x
PRELIMINARY DATA SHEET
6. Data Sheet History
1. Advance Information: “HAL 242x High-Precision Programmable Linear Hall-Effect Sensor Family”,
Dec. 18, 2012, AI000168_001EN. First release of the
advance information.
2. Preliminary Data Sheet: “HAL 242x High-Precision
Programmable Linear Hall-Effect Sensor Family”,
May 3, 2013, PD000211_001E. First release of the
preliminary data sheet.
Major changes:
– Outline Dimensions for TO92UT-1 (spread) added
– Recommended Operating Conditions: definition
of NPRG changed
– Characteristics: min./max. values for INLSIN
added
– Magnetic Characteristics: max. value for SENS
changed
Micronas GmbH
Hans-Bunte-Strasse 19  D-79108 Freiburg  P.O. Box 840  D-79008 Freiburg, Germany
Tel. +49-761-517-0  Fax +49-761-517-2174  E-mail: [email protected]  Internet: www.micronas.com
30
May 3, 2013; PD000211_001E
Micronas