2SA778(K), 2SA778A(K) Silicon PNP Epitaxial REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Application High voltage medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 1 of 7 2SA778(K) –150 –150 –5 –50 200 150 –55 to +150 2SA778A(K) –180 –180 –5 –50 200 150 –55 to +150 Unit V V V mA mW °C °C 2SA778(K), 2SA778A(K) Electrical Characteristics (Ta = 25°C) Collector to base breakdown voltage V(BR)CBO 2SA778(K) Min Typ Max –150 — — Collector to emitter breakdown voltage Collector cutoff current V(BR)CER –150 — — –180 — ICBO IEBO hFE — — — 30 — — — 100 –1.0 — –1.0 — — — — 40 Collector to emitter saturation voltage VCE(sat) — –0.3 –1.0 Base to emitter saturation voltage VBE(sat) — –0.77 Cob — fT Turn on time Turn off time Storage time Item Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Symbol 2SA778A(K) Min Typ Max –180 — — Unit V Test conditions IC = –50 µA, IE = 0 — V — — — 100 — –1.0 –1.0 200 µA µA µA IC = –50 µA, RBE = 30 kΩ VCB = –100 V, IE = 0 VCB = –150 V, IE = 0 VEB = –5 V, IC = 0 — –0.3 –1.0 V IC = –15 mA, IB = –1 mA –1.0 — –0.77 –1.0 V IC = –15 mA, IB = –1 mA — 10 — — 10 pF VCB = –10 V, IE = 0, f = 1 MHz — 50 — — 50 — MHz ton toff — — 135 1.7 — — — — 135 1.7 — — ns µs tstg — — 1.0 — — 1.0 µs REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 2 of 7 VCE = –3 V, IE = –15 mA VCE = –3 V, IC = –15 mA VCC = –10.3 V IC = 10 IB1 = –10 IB2 = –10 mA VCC = –10 V, IC =–17 mA IB1 = –1mA, IB2 = –12 mA 2SA778(K), 2SA778A(K) Main Characteristics Typical Output Characteristics (1) –50 300 Collector Current IC (mA) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 200 100 –40 P .0 C = –0.6 –0.5 20 0 m W –0.4 –0.3 –0.2 –0.15 –20 –0.1 –10 –0.05 mA IB = 0 0 50 100 150 0 –1 –2 –3 –4 –5 Collector to Emitter Voltage VCE (V) Collector Cutoff Current vs. Collector to Base Voltage Typical Output Characteristics (2) –0.5 –300 –0.4 Collector Current ICBO (nA) Collector Current IC (mA) –1 –30 Ambient Temperature Ta (°C) –4 –3 –0.3 –2 –0.2 – 1 µA –0.1 IB = 0 0 –40 –80 –160 VCE = –3 V 75 25 0 80 Ta = –25 °C 60 40 –1 –2 –5 50 –3 Ta = –1.0 25°C –10 –20 Collector Current IC (mA) REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 3 of 7 –40 –80 –120 –160 –200 Collector to Base Voltage VCB (V) Collector to Emitter Saturation Voltage vs. Collector Current 50 100 75 –10 0 Collector to emitter saturation voltage VCE (sat) (V) 120 100 –30 –200 DC Current Transfer Ratio vs. Collector Current 140 125 –100 –0.3 –120 Collector to Emitter Voltage VCE (V) DC current transfer ratio hFE –0.9 –0.8 –0.7 –50 –2.0 –1.6 IC = 10 IB –1.2 –0.8 –0.4 0 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) –50 2SA778(K), 2SA778A(K) –0.9 IC = 10 IB –0.8 –25 0 –0.7 25 –0.6 Ta 50 5°C =7 –0.5 –0.4 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 Input and Output Capacitance vs. Voltage Collector output capacitance Cob (pF) Emitter input capacitance Cib (pF) Base to emitter saturation voltage VBE (sat) (V) Base to Emitter Saturation Voltage vs. Collector Current 12 10 8 6 Cob (IE = 0) 4 2 0 –0.5 –1.0 –2 –5 –10 –20 Gain Bandwidth Product vs. Collector Current Switching Time vs. Collector Current 5 60 VCE = –3 V IC = 10 IB1 = –10 IB2 2 Switching time t (µs) 50 40 30 20 toff tstg 1.0 0.5 0.2 ton 0.1 td 0.05 10 0.02 0 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 4 of 7 –50 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) Collector Current IC (mA) Gain bandwidth product fT (MHz) f = 1 MHz Cib (IC = 0) –50 0.01 –0.5–1.0 –2 –5 –10 –20 –50 Collector Current IC (mA) 2SA778(K), 2SA778A(K) Switching Time Test Circuit ton, toff Test Circuit D.U.T. 6k 6k 0.002 Switching Time Test Circuit tstg Test Circuit 510 D.U.T 0.1 CRT 1k 2.4 k 0.002 50 P.G. tr, tf 15ns PW 5µs duty ratio 10% + 6V – + 50 – 50 –10.3 V Unit R : Ω C : µF P.G. tr, tf 5ns PW 5µs duty ratio = 50% 90% tstg 10% 10% 90% 90% ton 16 – –3 V + + 50 – 50 –10 V Unit R : Ω C : µF Response Waveform 10% td 0.002 CRT 50 Response Waveform 0 Input –13 V 0 Output 0.002 0.1 toff REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 5 of 7 +7 V Input 0 0 Output 10% 10% tstg 2SA778(K), 2SA778A(K) Package Dimensions Package Name TO-92(1) JEITA Package Code SC-43A Previous Code TO-92(1) / TO-92(1)V RENESAS Code PRSS0003DA-A 4.8 ± 0.3 MASS[Typ.] 0.25g Unit: mm 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 Max 1.27 2.54 Ordering Information Part No. 2SA778KTZ 2SA778AKTZ Note: Quantity 2500 Shipping Container Hold Box, Radial Taping For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 6 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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