Preliminary RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) G 1 2 3 E Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW ≤ 5 μs, duty cycle ≤ 1% REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Page 1 of 6 Symbol Ratings Unit VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC θj-c θj-c Tj 600 ±30 80 40 160 100 260.4 0.48 2.0 150 V V A A A A W °C/W °C/W °C Tstg –55 to +150 °C RJH60F5DPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time C-E diode forward voltage C-E diode reverse recovery time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF1 VECF2 trr Notes: 3. Pulse test REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Page 2 of 6 Min ⎯ ⎯ 4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.37 1.7 2880 122 47 40 35 80 80 1.6 1.8 140 Max 100 ±1 8 1.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 ⎯ ⎯ Unit μA μA V V V pF pF pF ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 40 A, VGE = 15V Note3 IC = 80 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5 Ω IF = 20 A IF = 40 A Note3 Note3 IF = 20 A diF/dt = 100 A/μs RJH60F5DPK Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics PW 100 = 10 Collector Current IC (A) 160 10 μs s 0μ 10 1 0.1 1 Collector Current IC (A) 10 V 120 13 V 8.6 V 15 V 80 8V 40 VGE = 7.4 V 0 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 160 Pulse VCE = Test 10 V Ta = 25Test °C Pulse 120 80 Tc = 75°C 40 25°C –25°C 0 0 2 4 6 8 4 Pulse Test Ta = 25°C 3 2 1 IC = 20 A 2.4 IC = 80 A 2.0 40 A 1.6 20 A 1.2 0.8 0.4 0 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Page 3 of 6 80 A 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 40 A 0 10 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 9V Pulse Test Ta = 25°C Tc = 25°C Single pulse Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 7 IC = 10 mA 6 5 4 1 mA 3 2 1 0 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) RJH60F5DPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage (Typical) Forward Current vs. Forward Voltage (Typical) 10000 VGE = 0 V Pulse Test Ta = 25°C 80 Capacitance C (pF) Forward Current IF (A) 100 60 40 20 VGE = 0 V f = 1 MHz Cies 1000 100 Coes Cres Ta = 25°C 0 10 1 2 3 4 0 5 50 150 200 250 300 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Switching Characteristics (Typical) (1) VGE IC = 40 A Ta = 25°C VCE 600 16 12 400 VCE = 600 V 300 V 8 200 4 VCE = 600 V 300 V 0 0 20 40 60 80 0 100 1000 Switching Time t (ns) 800 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C tf 100 td(off) td(on) 10 tr 1 1 10 Gate Charge Qg (nc) 10000 Switching Characteristics (Typical) (3) Switching Time t (ns) 1000 td(off) tf 100 IC = 40 A, RL = 7.5 Ω VGE = 15 V tf 100 td(off) tr td(on) td(on) 10 10 1 1000 1000 IC = 40 A, RL = 7.5 Ω VGE = 15 V, Ta = 25°C tr 100 Collector Current IC (A) Switching Characteristics (Typical) (2) Switching Time t (ns) 100 C-E Diode Forward Voltage VCEF (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage VCE (V) 0 10 Gate Resistance Rg (Ω) REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Page 4 of 6 100 0 20 40 60 80 100 120 140 Case Temperature Tc (°C) RJH60F5DPK Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 0.48 °C/W, Tc = 25°C 0.2 0.1 0.05 0.1 PDM D= 0.02 0.01 1 shot pulse 0.01 10 μ 100 μ PW T PW T 1m 10 m Pulse Width 100 m 10 1 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 2 0.0 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. 90% VCC Vin = 15 V Ic tr ton REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Page 5 of 6 10% 10% td(on) td(off) tf toff RJH60F5DPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Ordering Information Part No. RJH60F5DPK-00-T0 Quantity 360 pcs REJ03G1836-0100 Rev.1.00 Oct 13, 2009 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. 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