PNP high-voltage transistors BF470

, Una.
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BF470; BF472
PNP high-voltage transistors
FEATURES
• Low feedback capacitance.
APPLICATIONS
• Class-B video output stages in television receivers and
for high-voltage IF output stages.
DESCRIPTION
PNP transistors in a TO-126; SOT32 plastic package.
NPN complements: BF469 and BF471.
Top view
PINNING
DESCRIPTION
PIN
1
emitter
2
collector, connected to mounting base
3
base
Fig.1
Simplified outline (TO-126; SOT32) and
symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
UNIT
MAX.
-
-250
V
-
-300
V
BF470
-
-250
V
BF472
-
-300
V
BF470
VCEO
MIN.
CONDITIONS
open emitter
BF472
collector-emitter voltage
open base
ICM
peak collector current
-
-100
mA
Ptot
total power dissipation
T mb <114°C
-
1.8
W
hFE
DC current gain
Ic = -25 mA; VCE = -20 V
50
-
Cre
feedback capacitance
lc = ic = 0; VCE = -30 V; f = 1 MHz
-
1.8
fT
transition frequency
lc = -10 mA; VCE = -10 V; f = 100 MHz
60
-
PF
MHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
PNP high-voltage transistors
BF470; BF472
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
CONDITIONS
PARAMETER
collector-base voltage
MIN.
MAX.
BF470
-250
V
-300
V
-250
V
-300
V
-
BF472
VCEO
collector-emitter voltage
UNIT
open emitter
open base
BF470
-
BF472
open collector
VEBO
emitter-base voltage
-
-5
V
Ic
ICM
IBM
collector current (DC)
-
-50
mA
peak collector current
-
-100
mA
-
-50
Ptot
total power dissipation
-
1.8
T"stg
storage temperature
-65
+150
junction temperature
operating ambient temperature
-
150
-65
+150
mA
W
°C
°C
°C
Tj
Tarnb
peak base current
Tmb<114°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
Rfh j-a
thermal resistance from junction to ambient
in free air; note 1
Rth j-mb
thermal resistance from junction to mounting base
VALUE
UNIT
100
K/W
20
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10x10 mm.
CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VcEsat
Cre
ft
PARAMETER
collector cut-off current
emitter cut-off current
CONDITIONS
IE = 0; VCB = -200 V
IE = 0; VCB = -200 V; Tj = 150 °C
MIN.
50
Ic = 0; VEB = -5 V
lc = -25 mA; VCE = -20 V
collector-emitter saturation voltage lc = -30 mA; IB = -5 mA
feedback capacitance
Ic = ic = 0; VCE = -30 V; f = 1 MHz
transition frequency
lc = -10 mA; VCE = -10 V; f = 100 MHz 60
DC current gain
MAX.
-10
-10
-50
-600
UNIT
nA
HA
nA
mV
1.8
PF
-
MHz
PNP high-voltage transistors
BF470; BF472
PACKAGE OUTLINE
2.7
max
•*— 7.8 max —*•
* -
i
3.2
3.0
~^^
^f F"
3.75
4
11
m£
-«-1 2
15.3
min
1
[p8| I—
0.88_
max
0.5
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-126; SOT32.
2
3
90°