, Una. u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BF470; BF472 PNP high-voltage transistors FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO-126; SOT32 plastic package. NPN complements: BF469 and BF471. Top view PINNING DESCRIPTION PIN 1 emitter 2 collector, connected to mounting base 3 base Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage UNIT MAX. - -250 V - -300 V BF470 - -250 V BF472 - -300 V BF470 VCEO MIN. CONDITIONS open emitter BF472 collector-emitter voltage open base ICM peak collector current - -100 mA Ptot total power dissipation T mb <114°C - 1.8 W hFE DC current gain Ic = -25 mA; VCE = -20 V 50 - Cre feedback capacitance lc = ic = 0; VCE = -30 V; f = 1 MHz - 1.8 fT transition frequency lc = -10 mA; VCE = -10 V; f = 100 MHz 60 - PF MHz NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors PNP high-voltage transistors BF470; BF472 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO CONDITIONS PARAMETER collector-base voltage MIN. MAX. BF470 -250 V -300 V -250 V -300 V - BF472 VCEO collector-emitter voltage UNIT open emitter open base BF470 - BF472 open collector VEBO emitter-base voltage - -5 V Ic ICM IBM collector current (DC) - -50 mA peak collector current - -100 mA - -50 Ptot total power dissipation - 1.8 T"stg storage temperature -65 +150 junction temperature operating ambient temperature - 150 -65 +150 mA W °C °C °C Tj Tarnb peak base current Tmb<114°C THERMAL CHARACTERISTICS PARAMETER SYMBOL CONDITIONS Rfh j-a thermal resistance from junction to ambient in free air; note 1 Rth j-mb thermal resistance from junction to mounting base VALUE UNIT 100 K/W 20 K/W Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead minimum 10x10 mm. CHARACTERISTICS TJ = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VcEsat Cre ft PARAMETER collector cut-off current emitter cut-off current CONDITIONS IE = 0; VCB = -200 V IE = 0; VCB = -200 V; Tj = 150 °C MIN. 50 Ic = 0; VEB = -5 V lc = -25 mA; VCE = -20 V collector-emitter saturation voltage lc = -30 mA; IB = -5 mA feedback capacitance Ic = ic = 0; VCE = -30 V; f = 1 MHz transition frequency lc = -10 mA; VCE = -10 V; f = 100 MHz 60 DC current gain MAX. -10 -10 -50 -600 UNIT nA HA nA mV 1.8 PF - MHz PNP high-voltage transistors BF470; BF472 PACKAGE OUTLINE 2.7 max •*— 7.8 max —*• * - i 3.2 3.0 ~^^ ^f F" 3.75 4 11 m£ -«-1 2 15.3 min 1 [p8| I— 0.88_ max 0.5 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-126; SOT32. 2 3 90°