BSX45 - New Jersey Semiconductor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX; (973) 376-8960
BSX45; BSX46; BSX47
NPN medium power transistors
PINNING
FEATURES
• High current (max. 1 A)
PIN
DESCRIPTION
• Low voltage (max. 80 V).
1
emitter
base
APPLICATIONS
2
3
collector, connected to case
• General industrial applications.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
PARAMETER
SYMBOL
VCBO
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
_
-
80
V
BSX46
-
-
100
V
-
-
120
V
BSX45
-
-
40
V
BSX46
BSX47
-
-
60
V
-
-
80
V
collector-emitter voltage
open base
ICM
peak collector current
Plot
total power dissipation
Tcase < 25 °C
hFE
DC current gain
lc = 1 00 mA; VCE = 1 V
fi
TYP.
BSX45
BSX47
VCEO
MIN.
-
-
1.5
A
-
-
6.25
W
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
-
-
transition frequency
lc = 50 mA; VCE = 10 V; f = 100 MHz 50
MHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN medium power transistors
BSX45; BSX46; BSX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PARAMETER
SYMBOL
VCBO
collector-base voltage
BSX46
BSX47
collector-emitter voltage
MAX.
UNIT
open emitter
BSX45
VCEO
MIN.
CONDITIONS
-
80
100
120
V
V
V
-
40
60
80
7
1
V
V
V
V
A
1.5
200
6.25
+150
200
+150
A
mA
W
°C
°C
open base
BSX45
BSX46
BSX47
open collector
-
VEBO
emitter-base voltage
Ic
ICM
IBM
collector current (DC)
Plot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
-65
-
Tamb
operating ambient temperature
-65
peak collector current
peak base current
Tcase < 25 °C
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
R-th j-c
thermal resistance from junction to case
VALUE
UNIT
200
28
K/W
K/W
NPN medium power transistors
BSX45; BSX46; BSX47
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
BSX45; BSX46
ICBQ
CONDITIONS
IE = 0; VCB = 60 V
lE = 0;V CB = 60V;T a m b =150°C
-
-
_
nA
-
10
nA
BSX45-10; BSX46-10; BSX47-10
15
40
-
BSX45-16; BSX46-16
25
90
BSX45-10; BSX46-10; BSX47-10
63
100
160
BSX45-16; BSX46-16; BSX47-16
100
160
250
BSX45-10; BSX46-10; BSX47-10
25
40
-
BSX45-16;BSX46-16
35
60
-
20
hpE
DC current gain
DC current gain
DC current gain
lc = 100mA; VCE = 1V
lc = 500 mA; VCE = 1 V
lc = 1 A; VCE = 1 V
BSX45-10; BSX46-10; BSX47-10
BSX45-16;BSX46-16
collector-emitter saturation voltage
VcEsat
collector-emitter saturation voltage
VBE
base-emitter voltage
l c = 1 A; I B = 100mA
_
1
900
mV
l c = 100mA; VCE = 1 V
lc = 500 mA; VCE = 1 V
-
-
1
V
0.75
-
1.5
V
lc = 1 A; VCE = 1 V
lE = ie = 0;V CB = 1 0 V ; f = 1 MHz
-
-
2
V
25
PF
20
PF
15
pF
-
80
PF
-
-
MHz
3.5
-
dB
-
-
200
-
-
850
ns
ns
BSX45
BSX46
-
-
BSX47
emitter capacitance
transition frequency
noise figure
V
lc = 500 mA; IB = 25 mA
BSX47
collector capacitance
-
30
BSX45; BSX46
ce
MA
MA
lc = 0; VEB = 5 V
fr
F
nA
10
10
lc = 100uA;VCE = 1 V
Cc
30
30
DC current gain
VcEsat
_
-
emitter cut-off current
hpE
UNIT
_
IE = 0; VCB = 80 V
lE = 0;V CB = 80V;T a m b =150°
IEBO
hpE
TYP. MAX.
collector cut-off current
BSX47
hpE
MIN.
collector cut-off current
lc = 50 mA; VCE = 10 V; f = 100 MHz 50
lc = 100 nA; VCE = 5 V; Rs = 1 kii; f = 1 kHz; B = 200 Hz
lc = ic = 0;V EB = 0 . 5 V ; f = 1 MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
lcon = 100 mA; lBon = 5 mA;
Isoff = -5 mA
NPN medium power transistors
BSX45; BSX46; BSX47
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
- seating plane
H
b
10 mm
I
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
b
D
Di
nnm
6.60
6.35
5.08
0.48
0.41
9.39
9.08
8.33
8.18
OUTLINE
VERSION
SOT5/1 1
j
L
w
a
14.2
12.7
0.2
45°
k
0.85 0.95
0.75 0.75
REFERENCES
IEC
JEDEC
TO-39
EIAJ
EUROPEAN
PROJECTION
e30
ISSUE DATE