na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN switching transistors 2N2222; 2N2222A PINNING FEATURES • High current (max. 800 mA) PIN • Low voltage (max, 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. 2N2222 - 60 V 2N2222A - 75 V collector-emitter voltage open base 2N2222 - 30 V 2N2222A - 40 V - 800 mA mW Ic collector current (DC) P(ot total power dissipation Tamb < 25 °C - 500 DC current gain l c = 1 0 m A ; V C E = 10V lc = 20 mA; VCE = 20 V; f = 1 00 MHz 75 - hFE fr toff UNIT MAX. open emitter transition frequency 2N2222 250 - 2N2222A 300 - MHz MHz - 250 ns turn-off time Icon = 150 mA; Ison = 15 mA; lSoff = -15 mA N.I Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate find reliable at the time of going to press However N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. 2N2222; 2N2222A NPN switching transistors CHARACTERISTICS TJ = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER IE = 0; VCB = 50 V lE = 0;VcB = 50V;Tamb = 150°C emitter cut-off current DC current gain IE = 0; VCB = 60 V le = 0;V C B = 60V;T gmb = 150°C lc = 0; VEB = 3 V lc = 0.1 mA;V C E=10V l c = 1 mA;V CE = 10V lc = 10mA; VCE = 10V l c = 1 50mA; VCE = 1 V; note 1 lc = 150 mA; VCE = 10V; note 1 hpe DC current gain HFE DC current gain 35 50 75 50 100 10 10 nA HA nA - . 300 30 40 - lc = 150 mA; IB = 15 mA; note 1 . 400 lc = 500 mA; IB = 50 mA; note 1 - 1.6 lc = 1 50 mA; IB = 1 5 mA; note 1 . 300 lc = 500 mA; IB = 50 mA; note 1 - 1 mV V mV V base-emitter saturation voltage 2N2222 lc = 150 mA; IB = 15 mA; note 1 1.3 V V lc = 500 mA; IB = 50 mA; note 1 - 2.6 lc = 150 mA; IB = 15 mA; note 1 0.6 - 1.2 2 V V 8 pF . 25 pF 250 300 - MHz MHz 4 dB base-emitter saturation voltage 2N2222A lc = 500 mA; IB = 50 mA; note 1 Cc collector capacitance lE = ie = 0;V CB = 1 0 V ; f = 1 MHz Ce emitter capacitance lc = ic = 0; VEB = 500 mV; f = 1 MHz 2N2222A transition frequency lc = 20 mA; Vce = 20 V; f = 100 MHz 2N2222 2N2222A F 10 collector-emitter saturation voltage 2N2222A fr 10 collector-emitter saturation voltage 2N2222 VBEsat - nA HA 35 2N2222A VfiEsat 10 lc = 500 mA; VCE = 10 V; note 1 2N2222 VcEsat _ lc = 10 mA; VCE = 10 V; Tamb = -55 °C 2N2222A VcEsat UNIT collector cut-off current 2N2222A IEBO hFE MAX. collector cut-off current 2N2222 ICBO MIN. CONDITIONS noise figure 2N2222A lc = 200 jiA; VCE = 5 V; Rs = 2 kii; f = 1 kHz; B = 200 Hz — NPN switching transistors 2N2222; 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL collector-base voltage VCBO 2N2222A collector-emitter voltage UNIT - 60 75 V V - 30 V - 40 V -65 5 6 800 800 200 500 1.2 +150 200 +150 V V mA mA mA mW open base 2N2222 2N2222A emitter-base voltage VEBO MAX. open emitter 2N2222 VCEO MIN. CONDITIONS PARAMETER open collector 2N2222 2N2222A collector current (DC) Ic ICM IBM peak base current Ptot total power dissipation Tstg storage temperature T] junction temperature lamb operating ambient temperature peak collector current Tamb < 25 °C Tcase < 25 °C -65 W °C °C °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case in free air VALUE 350 K/W 146 K/W - seating plane DIMENSIONS <mllllm«t« dlm»n«lon» ar« d«riv«d from >ti« orifllnri Inch dlm«n»len») UNIT mm A 5.31 4.74 B 2.54 ta D 0.47 5.45 5.30 041 °1 4.70 4.55 J k 1.03 0.94 1.1 0.9 L w 15.0 12.7 0.40 REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7typs3 TO-18 EIAJ UNIT a 45' EUROPEAN PROJECTION ISSUE DATE ^30 97-04-18