types 2n1671, 2n1671a, 2n1671b, 2n2160 pn grown silicon

, Unc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
TYPES 2N1671, 2N1671A, 2N1671B, 2N2160
P-N GROWN SILICON UNIJUNCTION
TRANSISTOR
mechanical data
The transistors are hermetically sealed in a welded package with glass-to-metal seal between case and
leads. Approximate weight is one gram.
ALL LEADS INSULATED FROM CASE.
•awtuM
.oir
.on-.001 (> i»w.i
NOTES A, Tliis zone is controlled for automatic handling. The variation in
actual diameter within this zone shall
not exceed 0.010.
B. Measured front max. diameter of
the actual device.
C. The specified lead diameter applies in the zone between 0.050 and
0.250 from the base seat. Between
0.250and 1.5maximum of 0.021 diameter is held. Outside of these zones
the lead diameter is not controlled.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE
SPECIFIED.
* absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
2N1471
2N1671A
2N1671B
Emitter-Base Reverse Voltage
~30v
Emitter-Base Reverse Voltage below 140°C Junction Temperature
—
Interbase Voltage
.
35 v
RMS Emitter Current
50 ma
DC Emitter Current
—
Peak Emitter Current (see Note 1)
2a
Peak Emitter Current below 140°C Junction Temperature . . .
—
Total Device Dissipation at 25°C Free-Air Temperature
(see Note 2 & 3)
450 mw
Operating Temperature Range (see Note 3)
— 65°C to 140CC
Storage Temperature Range (see Note 4)
— 65°C to 150°C
2N2160
-30 v
35 v
70 ma
2a
450 mw
• 65BC to 140°C
•65°C to 150°C
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N~l
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.