2N3926 - New Jersey Semiconductor

TELEPHONE (973) 376-2922
(212)227-6005
FAX: (973) 379-8980
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
2N3924
2N3926
2N3927
SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS
The 2N3924 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case.
The2N3926 and the 2N3927 are n-p-n overlay transistors in TO-60 metal envelopes with the emitter
connected to the case.
The transistors are intended for v.h.f. transmitting applications.
QUICK REFERENCE DATA
2N3924 2N392B
Collector-emitter voltage (open base)
VCEO
'CM
Collector current (peak value)
Total power dissipation
up to Tmb = 25 °C
ptot
Junction temperature
Ti
Transition frequency
\ = 100 mA; VCE = 13.5 v
IC = 200 mA; V C E = 13,5 V
fT
R.F. performance at
type number
2N3924
2N3926
2N3927
max-
2N3927
36
18
1,6
36
18
3,0
36
18
4,5
23
200
max.
max.
7
11,6
200
200
>
250
250
200
V
V
A
W
°C
MHz
MHz
13-5 v-' f = 175 MHz
PjtW)
P 0 W>
T7(%)
<1
4
7
12
>70
>70
>80
<2
<4
MECHANICAL DATA
Dimensions in mm
Fig. 1a TO-39/1; collector connected to case.
2N3924
^r
W-
t.
5,08
max
_12.7_
min
Maximum lead diameter is guaranteed only for 12,7 mm.
N,l Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice.
Information kimisheil by NJ Stmi-tonductors is believed to he both accurate and reliable at the tune of going to press. However NJ
Scim-(. onductnts assumes no responsibility Cor any errors or omissions discovered in its use. NJ Semi-Conductors encourages
customers io venrv 'hai datiisheets ;ire uurrent before placing orders.
2N3924
2N3926
2N3927
MECHANICAL DATA (continued)
Dimensions in mm
Fig. 1b TO-60(2N3926and2N3927).
Emitter connected to case.
The top pins should not be bant.
10-32UNF
Torque on nut: rnin. 0,8 Nm ( 8 kg cm)
max. 1,7 Nm (17 kg cm)
Diameter of clearance hole in heatsink: 4,8 mm to 5,2 mm.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic.
The device is entirely safe provided that the BeO disc is not damaged.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
VCBO
max.
36
Collector-emitter voltage
1C < 400 mA; -VBE = 1,5 V
(open base); l£ < 400 mA
VCEO
VCEX
max.
max.
36
18
Emitter-base voltage (open collector)
VEBO
max.
Collector current
d.c.
peak value
"c
'CM
max.
max.
0,5
1,5
Total power dissipation
up to Tmb = 25 °C
Ptot
max.
7
Storage temperature
Junction temperature
2N3924
Tstg
Tj
max.
4
2N3926
V
V
V
2N3927
1,0
3,0
1,5 A
4,5 A
11.6
-65 to +200
200
23 W
°C
oc
2N3924
2N3926
2N3927
2N3924
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
j-mb
Rth mb-h
25
R th
e
2N3926
2N3927
15
7.5
K/W
0.6
0.6
K/W
CHARACTERISTICS
TJ = 25 °C unless otherwise specified
Collector cut-off current
IE = 0; VCB = 15 V
2N3924
2N3926
2N3927
^BO
<
100
100
ICBO
<
5
5
V(BR)CBO
>
36
36
36
V (BR)CEX
V (BR)CEO
>
>
36
18
36
18
36 V
18 V
V(BR)EBO
>
4
4
4 V
VBE
VBE
VBE
<
1.5
<
Ic = 250 mA; IB = 50 mA
v CEsat
< 0.75
Ic • 500 mA; IB = 100 mA
VcEsat
<
VcEsat
<
IE * °: VCB • 15 V; TJ = 150 °C
250
MA
10 mA
Breakdown voltages
*E = 0: ^ = 25° ^A
l£ up to 400 mA
= i.s v: R B -33 n !)
B
= 0
Ic = 0; IE = 250 MA
V
Base-emitter voltage
Ic = 250 mA; VCE = 5 V
Ic = 500 mA; V C E = 5 V
1C = 1000 mA; VCE = 5 V
V
1.5
<
V
1.5
V
Saturation voltage
Ic = 1000 mA; IB = 200 mA
V
0.75
V
1.0
V