lueti, Una. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BC107 BC108 BC109 MECHANICAL DATA Dimensions in mm (inches) „ 5.64 (0.230)^ 4.95(0.195) j U GENERAL PURPOSE SMALL SIGNAL NPN BIPOLAR TRANSISTOR FEATURES 048(0.019) jj] 0.41 (0.018) • SILICON NPN ' • HERMETICALLY SEALED TO18 2.5410.100). • SCREENING OPTIONS AVAILABLE TO-18 METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (TA - 25°C unless otherwise stated) VCBO Collector-Base Continuous Voltage BC017 VCEO BC108, BC109 Collector - Emitter Continuous Voltage With Zero Base Current BC107 VCES BC108, BC109 Collector - Emitter Continuous Voltage With Base Shortcircuited to Emitter 50V BC107 VEBO 30V 45V 20V 50V BC108, BC109 BC107 30V 6V BC108, BC109 5V Emitter - Base Continuous Voltage Reverse Voltage lc Continuous Collector Current ICM Peak Collector Current 200mA Ptot Power Dissipation @ Tamb = 25°C SOOmW Tamb Ambient Operating Temperature Range -65to+175°C Tstg Storage Temperature Range -65to+175°C 100mA NJ Semi-Conductors reserves the right to change test eonditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors BC107 BC108 BC109 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Test Conditions Min. Parameter Typ. Max. Unit V C B =45V BC107 15 VCB = 25V BC108, BC109 15 'ceo(i) Collector-Base Leakage Current lceo(i) Collector-Emitter Leakage Current V C B =45V BC107 4 @Tamb=125°C V C B =25V BC108, BC109 4 Emitter Cut-off Current V E B =4V lc = 0 1 VCE = 5V lc = 2mA Group A BC107, BC108 110 220 Group B All Types 180 460 Group C BC108, BC109 380 800 IEBO h 2 iE Static Forward Current Transfer Ratio BC107 110 460 BC108 110 800 BC109 180 800 nA MA MA Base - Emitter Breakdown VCE = 5V lc = 2mA 0.7 V VBE(Sat)(i) Base - Emitter Saturation Voltage I B = 0.5mA l c =10mA 0.83 V \/CE(sat)(i) Collector - Emitter Saturation Voltage I B = 0.5mA l c =10mA 0.25 V fT Transition Frequency VCE = 5V 10= 10mA VBE f=100MH z VCE = 5V F MHz I C = 0.2mA R = 2kiJ f=1kH z AF=200HZ Noise Factor BC109 I I I BC107, BC108 VCE - 5V lc = 2mA f -100kHz Group A n 2ie ! 150 Small Signal Forward Current Transfer Group B Group C Ratio BC107, BC108 125 All Types 240 BC108, BC109 450 BC107 125 dB 4 10 260 500 ; 900 500 BC108 125 900 BC109 240 900 4.5 VCE = 5Vl c = 2mAf=1kH z i11e Common Emitter Input Impedance Group A BC107, BC108 1.6 Group B All Types 3.2 Group C BC108, BC109 6.0 : kQ 8.5 15 V C E = 5 V l c = 2 m A f = 1kHz n22e C22b ^th(j-amb) Common Emitter Output Admittance Common Base Output Capacitance Thermal Resistance: Junction to Ambient • Group A BC107, BC108 30 Group B All Types 60 Group C BC108, BC109 110 V C B =10V f=1MH z ; MS 6 PF 500 °C/W