2N4302 N-Channel JFET Silicon Transistor General Purpose AF

J
, One.
C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N4302
N-Channel JFET Silicon Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain-Source Voltage, VDS
Drain-Gate Voltage, VDG
25V
25V
Gate-Source Voltage, VGS
-25V
Gate Current, IQ
Total Device Dissipation (TA = +25°C), PD
Derate Above 25°C
Operating Junction Temperature Range, Tj
10mA
300mW
2mW/°C
-55° to +150°C
Storage Temperature Range, Tstg
Lead Temperature (During Soldering, 1/16" from case for 10sec), TL
-55° to +150°C
+260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Gate-Source Breakdown Voltage
Symbol
V(BR)GSS
Gate Reverse Current
IGSS
Test Conditions
IG = 1uA VDS = 0
VGS = 20V, VDS = o
VGS ~ 20V. VDS = 0, TA = +1 50°C
Gate-Source Cutoff Voltage
VGS(off)
I D =1HA,V D S =15V
Gate-Source Voltage
VGS
lD = 50u.A,VDS = 15V
Zero-Gate-Voltage Drain Current
bss
VDS = 15V, VGS = 0
Forward Transfer Admittance
lyfsl
VDS = 15V, VGs = 0, f = 1kHz
Typ Max
-25
-1
-1
- -6.5
- -6.0
-0.4
0.5
15
1000
- 7500
Min
Unit
V
nA
M-A
V
V
mA
u.mho
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
.207 (5.28) Dia
.060
(1.52)
Min
Seating
Plane
018(0.45)
.100 (2.54) Dia
Drain
Source
Gate