J , One. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4302 N-Channel JFET Silicon Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain-Source Voltage, VDS Drain-Gate Voltage, VDG 25V 25V Gate-Source Voltage, VGS -25V Gate Current, IQ Total Device Dissipation (TA = +25°C), PD Derate Above 25°C Operating Junction Temperature Range, Tj 10mA 300mW 2mW/°C -55° to +150°C Storage Temperature Range, Tstg Lead Temperature (During Soldering, 1/16" from case for 10sec), TL -55° to +150°C +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Gate-Source Breakdown Voltage Symbol V(BR)GSS Gate Reverse Current IGSS Test Conditions IG = 1uA VDS = 0 VGS = 20V, VDS = o VGS ~ 20V. VDS = 0, TA = +1 50°C Gate-Source Cutoff Voltage VGS(off) I D =1HA,V D S =15V Gate-Source Voltage VGS lD = 50u.A,VDS = 15V Zero-Gate-Voltage Drain Current bss VDS = 15V, VGS = 0 Forward Transfer Admittance lyfsl VDS = 15V, VGs = 0, f = 1kHz Typ Max -25 -1 -1 - -6.5 - -6.0 -0.4 0.5 15 1000 - 7500 Min Unit V nA M-A V V mA u.mho NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors .207 (5.28) Dia .060 (1.52) Min Seating Plane 018(0.45) .100 (2.54) Dia Drain Source Gate