2N2646 - New Jersey Semiconductor

, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N2646
2N2647
SILICON UNIJUNCTION TRANSISTOR
JEDEC TO-18 CASE*
MAXIMUM RATINGS
(TA=25°C unless otherwise noted)
SYMBOL
Po(RMS)
'E(RMS)
IE
Vfi2B1
VB2E
Tj, TSTG
RMS Power Dissipation
RMS Emitter Current
Peak Pulse Emitter Current
Interbase Voltage
Emitter Reverse Voltage
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS
n
VB2B1 =iov+
v B2Bi -3-OV, 1 £=0
VB2B1 =10V, l£=50mA
VB2B1 =3.0V, TA=-65°C to +150°C
VB2Bi =10V, lE=50mA
lB1=0
V B2E= 30V,
VB2B1 =25V
VB2B1 =20V, RB2=100n
See test circuit below
'B2(MOD)
a^BBO
VEBI(SAT)
IEO
Ip
\\1
VoB1
^Conforms to JEDEC TO-18 outline
except for lead conf igurat ion.
2NZb46
MIN
MAX
0.56 o .75
4.7
9.1
15 TYP
0.1
0.9
3-5 TYP
12
5.0
4.0
3-0
Vnnl TEST CIRCUIT
Vl
B1
-^^
F
(?
fi
11
//
W
TT
300
50
2.0
35
30
"65 TO +150
(TA=25°C unless otherwise noted)
SYMBOL
RBBO
UNIT
mW
mA
A
V
V
°C
^/
2N2647
MIN
MAX
0.68
0.82
k.7
9.1
15 TYP
0.1
0.9
3-5 TYP
0.2
2.0
8.0
18
6.0
*H V
Jiwa
—r^ii
__ e , vW[—°"'""A
uryL
kfi
mA
fc/°C
V
uA
pA
mA
V
tn TEST CIRCUIT
I-, L *""
Jiokn
UNIT
'9
F" </''
£ "3
Z CI.D ff
;iokn
W
? =Cl
^
^
^
^
B2
"
::»o
__
1
.iiirrr™ ,r
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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