AVICTEK AV2222

@vic
AV2222
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
75
Vdc
Emitter – Base Voltage
VEBO
6.5
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
1
2
3
TO–92
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ICEX
—
10
nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
ICBO
—
—
0.01
10
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
10
nAdc
Collector Cutoff Current
(VCE = 10 V)
ICEO
—
10
nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
IBEX
—
20
nAdc
Characteristic
OFF CHARACTERISTICS
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1
µAdc
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AV2222
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
35
50
75
35
100
50
40
—
—
—
—
300
—
—
—
—
0.3
1.0
0.6
—
1.2
2.0
fT
300
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
25
pF
2.0
0.25
8.0
1.25
—
—
8.0
4.0
50
75
300
375
5.0
25
35
200
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
rb′Cc
—
150
ps
NF
—
4.0
dB
(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td
—
10
ns
tr
—
25
ns
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
ts
—
225
ns
tf
—
60
ns
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
kΩ
X 10– 4
—
mmhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
v
v
1. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
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AV2222
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+ 30 V
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
+16 V
0
–2 V
200
1.0 to 100 µs,
DUTY CYCLE ≈ 2.0%
+16 V
0
1 kΩ
< 2 ns
1k
–14 V
CS* < 10 pF
< 20 ns
Figure 1. Turn–On Time
CS* < 10 pF
1N914
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
–4 V
Figure 2. Turn–Off Time
1000
700
500
hFE , DC CURRENT GAIN
200
TJ = 125°C
300
200
25°C
100
70
50
–55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
Figure 4. Collector Saturation Region
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AV2222
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
20
10
7.0
5.0
200
t′s = ts – 1/8 tf
100
70
50
tf
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
500
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 Ω
500 µA, RS = 200 Ω
100 µA, RS = 2.0 kΩ
50 µA, RS = 4.0 kΩ
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
500
10
8.0
4.0
IC = 50 µA
100 µA
500 µA
1.0 mA
6.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
5.0
Ccb
3.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
Figure 9. Capacitances
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f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
f, FREQUENCY (kHz)
20
0.2 0.3
0
50
50 100
30
CAPACITANCE (pF)
300
Figure 6. Turn – Off Time
10
2.0
0.1
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
300
t, TIME (ns)
t, TIME (ns)
100
70
50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 10. Current–Gain Bandwidth Product
4
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AV2222
1.0
+0.5
TJ = 25°C
0
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
1.0 V
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
RqVC for VCE(sat)
– 0.5
– 1.0
– 1.5
RqVB for VBE
– 2.0
VCE(sat) @ IC/IB = 10
0
– 2.5
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500 1.0 k
Figure 11. “On” Voltages
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0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
5
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500