@vic AV2907 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –60 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 TO–92 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –40 — Vdc Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) V(BR)CBO –60 — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) ICBO — — –0.01 –10 Emitter Cutoff Current (VEB = –3.0 Vdc) IEBO — –10 nAdc Collector Cutoff Current (VCE = –10 V) ICEO — –10 nAdc Base Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width µAdc v 300 ms, Duty Cycle v 2.0%. Copyright @vic Electronics Corp. Cp 1 1 Website: http://www.avictek.com @vic AV2907 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 75 100 100 100 50 — — — 300 — — — –0.4 –1.0 — — –1.3 –2.0 fT 200 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF ton — 50 ns td — 10 ns tr — 40 ns toff — 110 ns ts — 80 ns tf — 30 ns ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc)(1) (IC = –500 mAdc, VCE = –10 Vdc)(1) hFE — Collector – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base – Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(1), (2) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn–On Time Delay Time (VCC = –30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) (Figures 1 and 5) Rise Time Turn–Off Time Storage Time Fall Time (VCC = –6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) (Figure 2) v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns –30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns –30 V 1.0 k 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Copyright @vic Electronics Corp. –6.0 V 1.0 k 0 50 –16 V +15 V Figure 2. Storage and Fall Time Test Circuit 2 Website: http://www.avictek.com @vic AV2907 TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = –1.0 V VCE = –10 V 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain –1.0 –0.8 IC = –1.0 mA –10 mA –100 mA –500 mA –0.6 –0.4 –0.2 0 –0.005 –0.01 –0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 IB, BASE CURRENT (mA) –3.0 –2.0 –5.0 –7.0 –10 –20 –30 –50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = –30 V IC/IB = 10 TJ = 25°C tf 30 20 td @ VBE(off) = 0 V 3.0 –5.0 –7.0 –10 2.0 V –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT –200 –300 –500 Figure 5. Turn–On Time Copyright @vic Electronics Corp. 100 70 50 30 t′s = ts – 1/8 tf 20 10 7.0 5.0 VCC = –30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 10 7.0 5.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time 3 Website: http://www.avictek.com @vic AV2907 TYPICAL SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = –1.0 mA, Rs = 430 Ω –500 µA, Rs = 560 Ω –50 µA, Rs = 2.7 kΩ –100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 C, CAPACITANCE (pF) 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 Ceb 10 7.0 Ccb 5.0 3.0 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 50 k 400 300 200 100 80 VCE = –20 V TJ = 25°C 60 40 30 20 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 –1.0 TJ = 25°C 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) –0.8 V, VOLTAGE (VOLTS) IC = –50 µA –100 µA –500 µA –1.0 mA 4.0 0 100 30 2.0 –0.1 6.0 2.0 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz VBE(on) @ VCE = –10 V –0.6 –0.4 –0.2 RqVC for VCE(sat) –0.5 –1.0 –1.5 RqVB for VBE –2.0 VCE(sat) @ IC/IB = 10 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –2.5 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients Copyright @vic Electronics Corp. 4 Website: http://www.avictek.com