ioaueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5515-2N5524 Dual N-Channel JFET Low Noise Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Tight Temperature Tracking • Tight Matching • High Common Mode Rejection • Low Nolle (TA=25'C unless otherwise specified) Gate-Source or Gate-Drain Voltage Gate CuTent (Note 1) Storage Temperature Range Operating Temperature Range Lead Temperature (Soldering, 10sac) PIN CONFIGURATION One Side 2SOmW a.OmVW'C Power Dissipation CTA=85-C) Derate above 25*C NOTE; Par transtolor. TO-71 -40V 50mA - 65'C to + 200*C - 55'C to + 160'C + 300'C Both Sides 375mW 3.0mW/'C NOTE: Stresses above those lined under "Ataauto Maximum Ratngf may emu pememnt damage to the device. These are stress ratings on/y and functional operation of ffta davtca at those ar any other con&fotu above tootf Indicated in the operational sections of the specif cations Is not imaged. Exposure to absolute maximum wing conditions for extended periods may Meet device retabWy. ORDERING INFORMATION TO-72 6037-2N5515-18 6019-2N5520-24 2NS515 2N5516 2NS517 2N5518 2N5519 2NS520 2N5521 2N5522 2N5523 2N5524 ELECTRICAL CHARACTERISTICS Symbol IQSS OA = ZS-C unless otherwise specified) Parameter Gate Reverse Current Test Conditions Min VQS=-30V,VDs = C» TA = 150'C Max Unit* -250 PA -250 nA evGss Gate-Source Breakdown Voltage IG*=-I(IA,VDS=O -40 VP Gate-Source Pinch-Off Voltage VDS=-20V,l!)=1nA -0,7 -4 VDS=20V,VQs-Q 0.5 7.5 mA 1000 4000 ,ia bss Drain Current at Zero Gate Voltage (Note 1) 9ts Common-Source Forward Transconduetartce (Note 1) 9oss Common-Source Output Conductance C,5S Common-Source Reverse Transfer Capacitance (Note 3) ciss Common-Source Input Capacitance (Note 3) f=1KHz V 10 f"1MHz 5 PF 25 NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2N5515-2N5524 ELECTRICAL CHARACTERISTICS (Continued) (TA = 25'C unless otherwise specified) Parameter Symbol Equivalent Input Noise Voltage (Note 3) 5n f~10Hz VGS Gale Source Voltage Sis Common-Source Forward TranscoriductancB (Note 1) Sou Common-Source Output Conductance 15 Symbol Parameter Test Conditions Drain Current Ratio at Zero Vrj3=20V, VQS-O Gate Voltage (Note 1) IQI- Is2l Differential Gate Current VDQ = 20V, (+125-C) lD = 200nA Transconduclance Ratio (Notel) -100 PA TA = 125'C -100 nA -0.2 -3.8 V 500 1000 !* 1 ,18 <TA = 25-C unless otherwise specified) Dsst'lossa 8f»1/8fa2 rtV/VF5 10 f=1kHz MATCHING CHARACTERISTICS Units f=1kHz VDG- 2ov. ID =200ji A Gate Current Max 30 2N5520-24 2N6516-24 |Q Mln Tett Condition! 2N5515-19 VDG = 20V, !D = 200fiA f-1kH2 2N551S.20 2N5516.21 2N5517,12 2N5518.23 2N5519.24 Units Mln Max Mln Max Mln Max Mln Max Mln Max 0.95 1 0.95 1 0.95 1 0.95 1 0.90 1 10 0.97 1 10 0.97 1 10 10 0.95 1 0.95 1 10 0.90 nA 1 BOM! ' 9oss2 1 Differential Output Conductance VgQ = 20V, lo^200ftA f-1kHz 0.1 0.1 0.1 0.1 0.1 ,18 Vesi-VGsal Differential Gate-Source Voltage VDO = 20V, D=-200jiA 5 5 10 16 15 mV VDQ-20V, ilVosi -VQSS 1 Gate-Source Voltage Differential Drift D = 200fiA AT (TA=-55'Cto+125<C) 5 10 20 40 80 CMRR Common Mode Rejection VDO~10to20V, 100 Rato (Note 2, 3) D-aOOpA NOTES: 1. Pulse dintlon ol ZSrcs used during teat. 2. CMRR - 20 log,04VDD/4IVasi- Vssjl, (iVDD - 10V) 3. For 4«8!gn rafvrenca only, not 100% tested. 100 90 £V •c dB