<Stmi'Con<iucto\ Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX (201)376-8960 2N3796 2N3797 TO-18 MAXIMUM RATINGS Symbol Rating ' 2N3796 2N3797 N-CHANNEl - DEPLETION Driln Currant Total Device Dissipation (5> TA » 25'C derate abova 25'C Unit Vdc 26 20 VQS <o PD GMe-Sourca Voltigi MOSFET LOW-POWER AUDIO Valu* VDS Drain-Source Voltage Vdc * 10 20 mAdc 200 mW mWC 1.14 Junction Temperature Range Storage Channal Tamperature Range ^ TJ -175 T S tg - 66 10 . 2QO •c 'C ELECTRICAL CHARACTERISTICS ITA . 25'C unless otherwise noted.I Symbol Characteristic Mln Typ Max 25 20 30 26 - - ~ 1.0 200 - 3.0 -50 -4.0 -7.0 Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VQS - -4.0 V, ID - 5.0 nA) IVQ? - -7.0 V, I0 - 6.0 »A) Gat* Reverie Currentm pAdc 'GSS (VQS « -iov, VDS - o) (VQ5 - -10 v, VDS - o. TA - iwci Gala Source Cutoff Voltage «D - 0.5 pA, VDS • 10 VI dp . 2.0 ^A. VDS " 10 VI Vdc VIBRIOSX 2N3796 2N3797 Vdc VGSIoH) ZN379e 2N3797 Drain-Gala Reverie Current!!) (VOQ - 10 V. Is « 01 L IDGO 1.0 — pAdc ON CHARACTERISTICS Zero-Gita-Voltege Drain Currant (VDS - 10 V, VQS • 0) On-State Driln Currant (Vos " 10V, VQS - +3.6 VI 'OSS 2N3798 2N3797 mAdc 0.5 2.0 1.5 2.9 3.0 6.0 7.0 9.0 8.3 14 18 rnAdc 'Dlonl 2N3796 2N3797 L '« SMAU-SIQNAL CHARACTERISTICS Forward Trantfar Admittance (VDS * 10 V, VQS • 0, ( - 1.0 kHl) IVOS " 10 V, VQS - 0, f - 1.0 MHil IVf«l 900 1200 1800 1500 2300 3000 2N3796 2N3797 1500 ... _ 12 27 25 60 — 5.0 6.0 7,0 8.0 Cr.l — 0.5 0.8 NF — 3.8 - Output Adminanca (vDs • 'o v, VQS - o, i - 1,0 MD 2N3796 900 'Voal 2N3797 Input Capaclttnca (VDS • 10 v, VQS • o, f - 1.0 MHD 2N3796 Ci,. 2N3797 Havana Tranafar Capacltanca Mmhoe 2N3796 2N3797 nmho« — — _ , pF pf (VDS • iov, VGS - o, f - I.OMHD FUNCTIONAL CHARACTERISTICS Nolle Figure (VDS - '0 V, VQS - 0, 1 - 1.0 kHz, RS = 3 megohm«l [ dB I HI Thll valua of currant include] both the FET leakage current as wall at Ihe leakage current aasociatad with the leu socket and fixture whan manured under bait attainable conditioni. Quality Semi-Conductors