One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
FEATURES
DUAL MATCHED
P-CHANNEL
ENHANCEMENT
MODE MOS FETS
Very High Input Impedance
Low Capacitance
High Gate Breakdown 3N190-3N191
Zener Protected gate 3N188-3N189
V g & (TH) Matched
V 0 &(TH) Tracking
MAXIMUM RATINGS
(@ 25°C ambient unless noted)
3N18B
3N189
UGSS
S""c G"e lo
Source
Voltage
V GSs' 1 ' Transient Gate to
Source Voltage
VSDS
In
PQ
T.
T1(g
T,
'
[
3N1SO
3N191
-40V -40V
140V S125V
3N188 3N189
3N190 3N191
PACKAGE DIMENSIONS
ORDERING INFORMATION
T099
WAFER
3N188
3N189
3N190
3N191
CHIP
3N190/D
3N191/D
3N190/W
3N191/W
Voltage
Source to Drain
-40V
-40V
Voltage
Drain Current
50mA
50mA
Power Dissipation
legchtide)
300 mW
0026
{both sides)
525 mW
0035
*
Total Derating Factor
4.2mW/"C
TYP
Operating Junction
-55to+150°C
Temperature
Storage Temperature
-65 to +200° C
GATE 2— '/'
Lead Temperature
+300° C
GATE 1—^
1/16" from Gate for
r™°•~l
H3
Ii
'L"' Tr4lNl
F
0290
— - 0330 - "
0025
rc_T
HI 0
n' ^
i,
2506C
rM
NOTE: SUBSTRATE
IS BODY
(-««"'
R
C -5'02
1
VIEW
I--S/02
I'9"
• S/01
023C>
^
LEAD 1 DRAIN 1
LEAD 2 SOURCE 1
LEAD 3 GATE t
>— BODY
Vjigo.aNiai
" 'Device must not be tested at b1 25V more than
once or for longer than 300 me.
i
.„
m
S'D 1--1
10 sec max
't!
TO-99
LEAD 5 GATE 7
LEAD 6 SOURCE 2
LEAD 7 DRAIN 2
31
ONLY
ALL DIMENSIONS IN INCHES UNLESS OTHERWISE NOTED
BODY ISUBSTRATE) INTERNALLY CONNECTED TO METAL CASE
ELECTRICAL CHARACTERISTICS (@ 25°C and VBS = 0 unless noted)
3N190
3N188
3N189
MAX
3N191
MIN
MAX
-200
-200
10
-10
-25
MIN
'GSS
lG(f)
lQ(f)
BVrjSS
BVSDS
Vcsith)
vGSith)
V GS
'DSS
ISDS
r ds(on)
lO(on)
Yf s
YQS
Cja
Cru
CDSJ
Gflte Reverse Current
Gate Forward Current
. Gate Forward Current @ 125°C
Oram-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Source Drain Current
Drain-Source on Resistance
On Drain Current
Forward Transconductance
Output Admittance
Input Capacitance Output Shorted
Reverie Transfer Capacitance
Output Capacitance Input Shorted
REGIS'
Real Part of Transconductance
-40
-40
-40
-40
-2.0 -5.0
-2.0 -5.0
-5.0
-2.0
-5.0 -2.0
-3.0 -6.5
-3.0
-6-5
-200
-200
-400
-400
300
300
-5.0 -30.0
-5.0
-30.0
1500
4000
1500
4000
300
4.5
1.0
3.0
300
4.5
1.5
3.0
UNITS
PA
PA
PA
V
V
V
V
V
PA
PA
ohms
mA
ymhos
umhos
VGS * -40V
V GS • -lev
ID " -10MA
Ic
=
- lOiiA, VgQ
=
0
V B S - - I S V , ID = - i O n A
VDS - vcSr 'o = -10 MA
VDS " - ' 5 V I D - -soo MA
VDS • -15V
VDS'-2° V ' lD--'°°dA
VDS- -15V. V G S - -lov
VDS --'SV. ID '-5mA,
VDS " -'5V, ID « - 5 m A .
pF
VDS • -15V, ID - -5mA,
SWITCHING CHARACTERISTICS (@ 25°C and VB g = 0 unless noted)
MIN
'Dion)
tr
t0ff
Turn On Dil'V Ti™
Rise Tim*
Turn Off Tim*
MAX
15
30
50
UNITS
n,
n«
ni
TEST CONDITIONS
V D D --16V, ! D - - 5 m A
R G -R L -1.4kn
MATCHING CHARACTERISTICS (@ 25°C and VBS = 0 unless noted)
MIN
^ftl' Y fs2
VGS1 2
AVQS1.2
Gate
Forward Transconductance Ratio
Source Threshold Volt«g* Differential
Gate Source Threshold Voltage Differential Change
AVGS1--2
AT
G«« Source Threshold Voltage Differential Change
with Temperature
O.B5
3N188 and 3N190
i
MAX
UNITS
1.0
100
8
mV
mV
VDS = -15V. iD*~ 500 ' lA
Vos'-i^-'o"- 500 "*'
10
mV
V D S --15V, ! B --500»iA.
T-+55°Cto+12S°C
V O S --15V. ID =-500»iA, f - 1 kHz
T - -55°C to + 25'C
\B^^^^n^^^^^^^l^r
Y^l 1 L^^H BB^r
Quality Semi-Conductors
- 1 kHz
-1kH2
VDS- -15V. ID --5mA. " ' MHr
VDS --15V. ID - - 5 m A ,
VDS ° -15V, ID - - 5 m A .
1200
1200
TEST CONDITIONS
= 1 MHz
- 1 MHz
-100MHz