N-Channel JFET High Frequency Amplifier CORPORATION J308 – J310 / SST308 – SST310 FEATURES • Industry Standard Part in Low Cost Plastic Package • High Power Gain Noise • Low • Dynamic Range Greater Than 100dB • Easily Matched to 75Ω Input APPLICATIONS • VHF/UHF Amplifiers • Oscillators • Mixers SOT-23 G ORDERING INFORMATION Part TO-92 Package Temperature Range J308-310 Plastic TO-92 -55oC to +135oC SST308-310 Plastic SOT-23 -55oC to +135oC For Sorted Chips in Carriers see U308 series. D S 5021 Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . 3.27mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PIN CONFIGURATION G D S ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) PRODUCT MARKING (SOT-23) SST308 Z08 SST309 Z09 SST310 Z10 J308 – J310 / SST308 – SST310 CORPORATION ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL 308 PARAMETER MIN BVGSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current 309 TYP MAX -25 MIN 310 TYP MAX -25 MIN UNITS TYP TEST CONDITIONS MAX -25 V IG = -1µA, VDS = 0 -1.0 -1.0 -1.0 nA VGS = -15V, -1.0 -1.0 -1.0 µA VDS = 0 VDS = 10V, ID = 1nA VGS(off) Gate-Source Cutoff Voltage IDSS Saturation Drain Current (Note 1) VGS(f) Gate-Source Forward Voltage gfs Common-Source Forward Transconductance gos Common-Source Output Conductance gfg Common-Gate Forward Transconductance 13,000 13,000 12,000 g og Common Gate Output Conductance 150 150 150 TA = 125 o -1.0 -6.5 -1.0 -4.0 -2.0 -6.5 V 12 60 12 30 24 60 mA VDS = 10V, VGS = 0 1.0 V VDS = 0, IG = 1mA 1.0 8,000 17,000 1.0 10,000 17,000 250 8,000 17,000 250 250 µS VDS = 10V ID = 10mA (Note 2) f = 1kHz ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 308 309 310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX Cgd Gate-Drain Capacitance 1.8 2.5 1.8 2.5 1.8 2.5 Cgs Gate-Source Capacitance 4.3 5.0 4.3 5.0 4.3 5.0 en Equivalent Short-Circuit Input Noise Voltage 10 10 Re(Vfs) Common-Source Forward Transconductance 12 12 12 Re(Vfg) Common-Gate Input Conductance 14 14 14 Re(Vis) Common-Source Input Conductance 0.4 0.4 0.4 Re(Vos) Common-Source Output Conductance 0.15 0.15 0.15 Gpg Common-Gate Power Gain at Noise Match 16 16 16 NF Noise Figure 1.5 1.5 1.5 Gpg Common-Gate Power Gain at Noise Match 11 11 11 NF Noise Figure 2.7 2.7 2.7 pF VDS = 10V, VGS = -10 nV NOTES: 1. Pulse test PW 300µs, duty cycle ≤3%. 2. For design reference only, not 100% tested. VDS = 10V, √10 Hzü ⁄ç4«ónVçXIÇÀçXäBÇÇG‘•çQXóHzâÏé ID = 10mA f = 1MHz (Note 2) f = 100Hz (Note 2) µS f = 105MHz VDS = 10V, ID = 10mA (Note 2) dB f = 450MHz