, Una. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 PMD18D, 19D SERIES 300 WATT (50 AMP CONTINUOUS, 100 AMP PEAK DEVICE SELECTION GUIDE VOLTAGE RATING DEVICE PMD18D80 80V 100V PM01 80100 80V PM019D80 PM01 90100 100V POLARITY NPN NPN PNP PNP ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector Emitter Voltage PMD18D, PMD19D80 PMD18D, PMD19D100 VCEO Collector Base Voltage PM0180. PMD19D80 PMD18D, PMD19D100 VCBO Emitter Base Voltage VE,o Collector Current Continuous Peak Ic Base Current MAXIMUM UNITS Vdc 80 100 Vdc FEATURES 80 100 5 Vdc Adc 50 100 IB 1.5 Thermal Resistance »x 0.4 Adc • "C/Watt Total Internal Power Dissipation <a Tc = 50°C' PO 300 Watts -65 to +200 •c Operating Junction and Storage Temperature TSTB "> For operation above Tc - 80°C. derate (a 2.5 W/°C. • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for ISB (Secondary Breakdown Current) insuring maximum performance at high energy levels • Low thermal resistance for more useable power and lower operating temperatures • Hermetically sealed NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS All parameters are guaranteed at T, = 0 to 200°C, unless otherwise specified. Parameter Maximum Units lc = 30Adc;l B = 120mAdc 2.0 Vdc VBE<O") lc = 30 Adc; VCE = 3 Vdc 2.8 Vdc VsElsat) lc = 30Adc;l B = 120mAdc 2.8 Vdc Symbol Test Conditions VcE(sat) Minimum ON CHARACTERISTICS Collector Emitter Saturation Voltage1 Base Emitter Turn-on Voltage1 Base Emitter Saturation1 DC Current Gain1 PMD18D80, 100 PMD19D80, 100 Forward Bias Secondary Breakdown Current OFF CHARACTERISTICS Collector Emitter Breakdown Voltage1 (Base Open) PMD18D, 19D80 PMD18D, 190100 Collector Emitter Sustaining Voltage1 PMD18D, 19080 PMD18D, 19D100 •mitter Base Leakage Current Collector Emitter Leakage Current PMD18D, 19D80 PMD18D, 19D100 DYNAMIC CHARACTERISTICS Output Capacitance imall Signal Current Gain tommon Emitter ihort Circuit t>rward Transfer iatio HFE lc = 30 Adc; VCE = 3 Vdc L - 25'C l«b VCE = 30 Vdc; TA = 25°C 1 sec non-repetitive pulse V(BR)CEO ICE = 100 mAdc; T, = 25°C 1000 800 10.0 20,000 20,000 Adc Vdc 80 100 VISUSICEO lce = 100 mAdc; RBE = 2.2M1 Vdc. 80 100 IEBO VEB = 5 Vdc; lc = OA 6.0 mAdc ICER Co, h,. nf. mAdc VCE = 54 Vdc; RBE = 2.2kn VCE = 67 Vdc; RBE = 2.2kO 15.0 15.0 VCB = 10 Vdc; IE = 0 Adc f = 1 MHz; L = 25°C lc = 18 Adc; VCE = 3 Vdc f = 1 kHz; L - 25'C 1200 lc = 18 Adc: VCE = 3 Vdc f = 1 MHz; Tj = 25°C 300 4 PF