MPS6512 thru MPS6515 MPS6516 thru MPS6519

, L/na.
(l£ ii£U
C^
TELEPHONE: (973) 376-2922
(212)227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
FAX: (973) 376-8960
MAXIMUM RATINGS
NPN
MPS6512
thru MPS6515
PNP
MPS6516
thru MPS6519
Rating
Symbol
Collector-Emitter Voltage
MPS6512, MPS6513
MPS6514, MPS6515
MPS6516thru MPS6518
MPS6519
VCEO
Collector-Base Voltage
MPS6512thru MPS6515
MPS6516thru MPS6518
MPS6519
VCBO
Emitter-Base Voltage
VEBO
ic
PD
Unit
Vdc
30
25
Vdc
40
40
25
Collector Current — Continuous
4,0
100
Tj, T8tg
4,0
Vdc
100
mAdc
625
5.0
mW
mW/°C
1.5
12
Wans
mW/°C
-56' to +150
•c
PD
Total Device Dissipation (a. TC - 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PNP
40
25
Total Device Dissipation <& T/\ 25°C
Derate above 25°C
TO-92
NPN
THERMAL CHARACTERISTICS
AMPLIFIER TRANSISTOR
Characteristic
Symbol
Max
Unit
RflJC
RAJA
83.3
°c/w
200
3C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted.)
" Characteristic
Symbol
Mln
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC - 0,6 mAdc, IB - 0)
dC - 0.5 mAdc, IB • 0)
Emitter-Base Breakdown Voltage
MPS6512, MPS6513
MPS6514, MPS6515
MPS65t6 thru MPS6518
MPS6519
(Ig - 10 fiAdc, Ic » 0)
(IE - 10 M^dc, Ic • 0)
Vdc
30
25
40
VIBRIEBO
—
—
25
—
—
4,0
4.0
—
—
—
—
—
,—
—
ICBO
Collector Cutoff Current
(VCB = so Vdc, IE • 01
(VCB - so Vdc, IE - 01
<VCB - 20 vdc, IE - °>
VIBRICEO
•
MPSBSIB thru MPSBSIS
MPSSSIS
'-.
• —
—'
—
—
,
.Vdc
—
/iAdc
—
0.05
0.05
0,05
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Seini-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors enunmiges customers to verify that datasheets ore current before placinu orders.
ON CHARACTERISTICS
DC Currant Gain
dC - 2,0 mAdc, VCE - 10 Vdc)
hFE
dc = 100 mAdc, VCE • lOVdcllD
dC - 2.0 mAdc, VCE = 10 Vdc)
dC - 100 mAdc, VCE " lOVdcld)
Collector-Emitter Saturation Voltage
m~
MPS6512
MPS6513
MPS6514
MPS6515
60
90
160
260
MPS6512
MPS6513
MPS6514
MPS6515
30
60
90
150
MPS6516
MPS6517
MPS6518
MPS6519
60
90
150
250
MPS6516
MPS6517
MPS6518
MPS6519
30
60
90
150
dc = 50 mAdc, l@ » 5.0 mAdc)
dC " 50 mAdc, IB * 5.0 mAdc)
VCE(sat)
—
—
—
_
—
—"
_
100
180
300
500
_
_
_
—
_
—
—
_
—
—
—
_
-F-
—
100
180
300
500
— —
—
—
—
—
0.5
0.5
Vdc
3.5
4.0
Pf
—
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (VQB * 10 Vdc, IE c 0. i - 100kHz)
(VCQ •> 10 Vdc, IE - 0, f = 100 kHz)
(1) P»M Te»t: Puls« Width « 300 *is, Duty Cycle * 2,0%
C0bo
_
_