'JEIIEU ^zml-tLonauator iJ-* 10 ducts., Line. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SVMTCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, and swrtchmode applications such as switching regulator*s,converters. NPN 2SC2625 FEATURES: •Collector-Emitter Sustaining VoltageVCECW««)=400V(Min) * Collector-Emitter Saturation Voltage vCE(»t) = 1 -2 v (Max-) 6 "c = 4-° A, IB = 0-8A * Switching Time -1, = 1.0 us (Max.) @ lc =5.0 A 10 AMPERE SILICON POWER TRANASISTORS 400 VOLTS 80 WATTS MAXIMUM RATINGS Symbol 2SC2625 Unit Collector-Emitter Voltage vceo 400 V Collector-Base Voltage VCBO 450 V Emitter-Base Voltage VEBO 7.0 V Collector Current - Continuous -Peak 'c 'CM 10 20 A Base current 'B 3.0 A Total Power Dissipation @TC= 25°C Derate above 25°C PD 80 0.64 Characteristic Operating and Storage Junction Temperature Range TJ.TSTO TO-247(3P) W W/°C °C -55to-»-150 THERMAL CHARACTERISTICS Characteristic PIN 1 BASE 2.COLLECTOR Max 1.56 Symbol Thermal Resistance Junction to Case R8JC Unit °CA/V DIM A B C D FIGURE -1 POWER DERATING 80 70 E F G 60 50 H I J K 4° 30 L 20 10 25 50 75 100 Tc , TEMPERATUREfC) 125 150 M N O P MILLIMETERS MIN MAX 20.63 15.38 1.90 5.10 14,81 11.72 4.20 1.82 2.92 0.89 5.26 18.50 4.68 2.40 3.25 0.55 22.38 16.20 2.70 6.10 15.22 12.84 4.50 2.46 3.23 1.53 5.66 21.50 5.36 2.80 3.65 0.70 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS (T c = 25°C unless otherwise noted } Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lc=10mA,lB=0) V(BR)CEO Collector-Base Breakdown Voltage (lc= 1.0mA, IE=0) V(BR)CBO Collector Cutoff Current (VCB=450V, I E =0) ICBO Emitter Cutoff Current (v^y.ov, i c =o) IEBO V 400 V 450 mA 1.0 uA 100 ON CHARACTERISTICS (1) DC Current Gain (I C =4.0A,V CE =5.0V) hFE Collector-Emitter Saturation Voltage (lc=4.0A,lB=800mA) Vw Base-Emitter Saturation Voltage (l c =4.0A,l B =800mA) VBE<«> SWITCHING CHARACTERISTICS On Time vcc=isov, IC=S.OA IB1=-IB2=1.0A Storage Time RL=30 ohm Fall Time (1) Pulse Test Pulse Width =300 us, Duty Cycle S 2.0% 10 V 1.2 V 1.5 t«, 1.0 us *, 2.S us *» 1.0 us