s., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TIC126M Thyristors APPLICATIONS • 12Acontimunous on-state current • 100A surge-current • Glass passivated • Max IGT of 20mA ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V ll(AV) On-state current Tc=80°C 7.5 A RMS on-state current Tc=80°C 12 A ITM Surge peak on-state current 100 A PGM Peak gate power Pw^SOO u s 5 W Average gate power 1 W 110 °C -40-+125 °c 2.4 •c/w °c/w Ij(RMS) PG<AV> Tj Tstg Operating Junction temperature Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient 62.5 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise specified) MAX UNIT VRM=VRRM,Tj=110°C 2.0 mA Repetitive peak off-state current VRM=VRRM,Tj=110°C 2.0 mA On-state voltage ITM= 12A 1.4 V IGT Gate-trigger current VAA=6V;RL=100n 20 mA VGT Gate-trigger voltage VAA=6V;R L =100Q 1.5 V Holding current VAA=6V; R GK =1kQ,l T = 100mA 40 mA SYMBOL PARAMETER IRRM Repetitive peak reverse current IDRM VTM IH CONDITIONS MIN TYP. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors