Silicon Controlled Rectifiers 2N6236 thru 2N6241

<Sg.mi-Conductoi ZPtoducti, fine.
2N6236
thru
2N6241
Silicon Controlled Rectifiers
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201) 376-2922
(212)227-6005
FAX: (201) 376-8960
Ravers* Blocking Trlod* THyrlstort
TO-1J»
MAXIMUM RATINOB (Tc - 11 OX unlaat otherwise notad.)
Rating
Value
Symbol
VDRM
•Rcpttillv* Ps«k Forward and Reverie Blocking Voltage (Noli 1)
(1/2 Slna Wave)
2N8238
IRQ* - 1000 ohma, Tc > -40 to •"•HO'CI
2N6237
2N8238
2N6239
2N8240
2N6241
•Non-Repetitive Paak Reverse Blocking Voltaga
(1/2 Slna Wava, RQK - 1000 ohmt,
TC - -40 to +110fC)
Volta
or
30
VRRM
200
50
100
400
600
VRSM
2N6236
2N8237
2N6238
2N6239
2N8240
2N6241
•Average On-State Currant
(Tc - -40 to + 90'C)
!T(AV)
•Surge On-Stat* Currant
11/2 Slna Wava, 60 Hi, TC - + 90'C)
(1/2 Slna Wava, 1,6 ma, TC - + 90-C)
>TSM
Unit
Volt*
60
100
160
250
460
660
Amps
2.6
1.6
(TC - +100*0
Amp*
2B
35
Circuit Fusing
(Tc • - 40 to + 110'C, t • 1 to 8.3 ma)
|2t
2.6
A2a
'OM
O.S
Watt
PQ(AV)
0.1
Watt
Peak Forward Qate Current
>GM
0.2
Amp
Peak Reverse Gala Voltaga
VRGM
6
Volta
•Ptak Gata Powar
IPulaa Width - 10ut.Tr - 90*C)
•Average Gala Powar
(t - 8.3 mi, TC - WC)
'Operating Junction Temperature Range
•Storage Temperature fla'nge
.
Mounting Torque (Note 2)
Tj
-40 to +110
•c
Tstg
-40 to +150
•c
_
6
In. Ib.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Mln
Max
Unit
•Thermal Resistance, Junction to Case
RWC
—
3
Thermal Resistance Junction In Ambidnl
"ftJA
—
76
•c/w
•c/w
•inctictiei JEDEC Raqisterort Oatn.
ELECTRICAL CHARACTERISTICS ITC =. 25'C and RGK '-: 1°00 ohms unless otherwise noted.)
Charactarlttic
Symbol
•Paak Forward or Reverse Blocking Current (Note 1)
(Rated VQRM or VRRM) TC - ?5"C
TC - 110"C
•Peek Forward "On" Voltage '
HTM "" 8 - 2 A PB8|<' Pulsfl Width
IDRM- >RRM
VTM
MlH
IT!
in
TVP
Max
Unit
-
-
10
200
MA
Volta
—
—
2.2
-
—
200
500
/•A
1 to 2 ms, 2% Duty Cycle)
Gate Trigger Current (Continuous del (Note 31
< V AK " 1J Vdc, RL 24 OnrT15)
•IVAK • 12 Vdc, F»|. - 24 Ohms, Tc 40"C>
IGT
Gata Trigger Voltage (Continuous del
(Source Voltage •• 12 V, RS ~ 50 Ohms)
•IV^K " '2Vrtc, RL " 240hms. TC
40"C)
VGT
^™*
"™"
1
Volta
Gate Non-Tfiggor Volt.icin
VGD
0.2
—
—
Volta
(VAK
• Ra""* VDRM. HI
tooohms. r c
Holding Current
(VAK
U Vdc, IQT " 2mAI
•llnitiating On-State Currant •• 200mA)
•Total Turn-On Time
(Source Voltage =• 12 V, RS * 6 k Ohmj)
iio-ci
TC - 2BT
TC » -40°C
"H
-
_
«gt
*A
mA
5
10
2
M*
—
V/MS
HTM • 8'* *• IGT - 2 <"A. «•«•<* VDRM!
(Rise Time - 20 ns, Pulse Width - 10 n«)
Forward Voltage Application Rate
(VD - Rated VDRM. TC • "o-ci
dv/dt
_
10
Style 2, 5, 7
STYLE 2
PIN I. CATHODE
2 ANODE
3. GATE
MILLIMETERS •
Quality Semi-Conductors
DIM MM MAX
11. OS
A
•Off
1
749
7.75
2.S7
C
2.<l
OEE
051
0
7.92
1.18
246
G
231
241
127
M
084
J
0.38
K
IS It 1664
M
3 >TYP
p
4.01
3.7S
ft
1.40
114
$
964
0.19
U
3CI
I! 4
V
l.«2
INCHES'
Mitt
MAX
0,425
0295
0095
0020
0115
0.435
0.305 )
••-J
0105
0026
G 125
0097 .
0095
0015
0075
0.595 0.655
J*TYP
0.091
0.050
0141
0158
1.041 •.055 ,
0.025 «.035
ft 145 0155
1040
STYLE?
PIN i MII
2
J
MT2
GATE
PIN I. MTI
2 GATE
1 MT2