<Sg.mi-Conductoi ZPtoducti, fine. 2N6236 thru 2N6241 Silicon Controlled Rectifiers 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 Ravers* Blocking Trlod* THyrlstort TO-1J» MAXIMUM RATINOB (Tc - 11 OX unlaat otherwise notad.) Rating Value Symbol VDRM •Rcpttillv* Ps«k Forward and Reverie Blocking Voltage (Noli 1) (1/2 Slna Wave) 2N8238 IRQ* - 1000 ohma, Tc > -40 to •"•HO'CI 2N6237 2N8238 2N6239 2N8240 2N6241 •Non-Repetitive Paak Reverse Blocking Voltaga (1/2 Slna Wava, RQK - 1000 ohmt, TC - -40 to +110fC) Volta or 30 VRRM 200 50 100 400 600 VRSM 2N6236 2N8237 2N6238 2N6239 2N8240 2N6241 •Average On-State Currant (Tc - -40 to + 90'C) !T(AV) •Surge On-Stat* Currant 11/2 Slna Wava, 60 Hi, TC - + 90'C) (1/2 Slna Wava, 1,6 ma, TC - + 90-C) >TSM Unit Volt* 60 100 160 250 460 660 Amps 2.6 1.6 (TC - +100*0 Amp* 2B 35 Circuit Fusing (Tc • - 40 to + 110'C, t • 1 to 8.3 ma) |2t 2.6 A2a 'OM O.S Watt PQ(AV) 0.1 Watt Peak Forward Qate Current >GM 0.2 Amp Peak Reverse Gala Voltaga VRGM 6 Volta •Ptak Gata Powar IPulaa Width - 10ut.Tr - 90*C) •Average Gala Powar (t - 8.3 mi, TC - WC) 'Operating Junction Temperature Range •Storage Temperature fla'nge . Mounting Torque (Note 2) Tj -40 to +110 •c Tstg -40 to +150 •c _ 6 In. Ib. THERMAL CHARACTERISTICS Characteristic Symbol Mln Max Unit •Thermal Resistance, Junction to Case RWC — 3 Thermal Resistance Junction In Ambidnl "ftJA — 76 •c/w •c/w •inctictiei JEDEC Raqisterort Oatn. ELECTRICAL CHARACTERISTICS ITC =. 25'C and RGK '-: 1°00 ohms unless otherwise noted.) Charactarlttic Symbol •Paak Forward or Reverse Blocking Current (Note 1) (Rated VQRM or VRRM) TC - ?5"C TC - 110"C •Peek Forward "On" Voltage ' HTM "" 8 - 2 A PB8|<' Pulsfl Width IDRM- >RRM VTM MlH IT! in TVP Max Unit - - 10 200 MA Volta — — 2.2 - — 200 500 /•A 1 to 2 ms, 2% Duty Cycle) Gate Trigger Current (Continuous del (Note 31 < V AK " 1J Vdc, RL 24 OnrT15) •IVAK • 12 Vdc, F»|. - 24 Ohms, Tc 40"C> IGT Gata Trigger Voltage (Continuous del (Source Voltage •• 12 V, RS ~ 50 Ohms) •IV^K " '2Vrtc, RL " 240hms. TC 40"C) VGT ^™* "™" 1 Volta Gate Non-Tfiggor Volt.icin VGD 0.2 — — Volta (VAK • Ra""* VDRM. HI tooohms. r c Holding Current (VAK U Vdc, IQT " 2mAI •llnitiating On-State Currant •• 200mA) •Total Turn-On Time (Source Voltage =• 12 V, RS * 6 k Ohmj) iio-ci TC - 2BT TC » -40°C "H - _ «gt *A mA 5 10 2 M* — V/MS HTM • 8'* *• IGT - 2 <"A. «•«•<* VDRM! (Rise Time - 20 ns, Pulse Width - 10 n«) Forward Voltage Application Rate (VD - Rated VDRM. TC • "o-ci dv/dt _ 10 Style 2, 5, 7 STYLE 2 PIN I. CATHODE 2 ANODE 3. GATE MILLIMETERS • Quality Semi-Conductors DIM MM MAX 11. OS A •Off 1 749 7.75 2.S7 C 2.<l OEE 051 0 7.92 1.18 246 G 231 241 127 M 084 J 0.38 K IS It 1664 M 3 >TYP p 4.01 3.7S ft 1.40 114 $ 964 0.19 U 3CI I! 4 V l.«2 INCHES' Mitt MAX 0,425 0295 0095 0020 0115 0.435 0.305 ) ••-J 0105 0026 G 125 0097 . 0095 0015 0075 0.595 0.655 J*TYP 0.091 0.050 0141 0158 1.041 •.055 , 0.025 «.035 ft 145 0155 1040 STYLE? PIN i MII 2 J MT2 GATE PIN I. MTI 2 GATE 1 MT2