HiPerFETTM Power MOSFET VDSS ID25 RDS(on) 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C; IAR TC = 25°C 24 23 96 92 24 EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ Note 1 TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Min. Characteristic Values Typ. Max. VDSS VGS = 0 V, ID = 3mA 1000 V VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±20V, VGS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C 100 µA 2 mA RDS(on) VGS = 10V, ID = 0.5 • ID25 Note 2 23N100 24N100 0.43 0.39 «=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ S G S D G = Gate S = Source D = Drain báíÜÉê=pçìêÅÉ=íÉêãáå~ä=~í=ãáåá_il`=Å~å=ÄÉ=ìëÉÇ ~ë=j~áå=çê=hÉäîáå=pçìêÅÉ Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 5.0 miniBLOC, SOT-227 B (IXFN) E153432 V ±100 nA Ω Ω Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density VURVTa= ENMLMMF IXFN 23N100 IXFN 24N100 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 0.5 • ID25, Note 2 15 22 S 7000 pF 750 pF Crss 260 pF td(on) 35 ns 35 ns 75 ns 21 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd ` a QKMV QKMV QKOV QKOV MKNSN MKNSN MKNSV MKNSV 135 nC b c QKMV NQKVN QKOV NRKNN MKNSN MKRUT MKNSV MKRVR K/W d e PMKNO PUKMM PMKPM PUKOP NKNUS NKQVS NKNVP NKRMR K/W g h NNKSU UKVO NOKOO VKSM MKQSM MKPRN MKQUN MKPTU i j MKTS NOKSM MKUQ NOKUR MKMPM MKQVS MKMPP MKRMS k l ORKNR NKVU ORKQO OKNP MKVVM MKMTU NKMMN MKMUQ m n QKVR OSKRQ RKVT OSKVM MKNVR NKMQR MKOPR NKMRV o p PKVQ QKTO QKQO QKUR MKNRR MKNUS MKNTQ MKNVN q r OQKRV JMKMR ORKMT MKN MKVSU JMKMMO MKVUT MKMMQ 24 23 A A 24N100 OPkNMM 96 92 A A 1.5 V 250 ns µC A Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM I F = IS, -di/dt = 100 A/µs, V R = 100 V j~ñK nC = 24N100 23N100 ISM fåÅÜÉë jáåK 55 Characteristic Values Min. Typ. Max. VGS = 0 jáääáãÉíÉê jáåK j~ñK nC 0.05 IS aáãK 250 0.21 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions M4 screws (4x) supplied ^ _ RthJC RthCK miniBLOC, SOT-227 B 1.0 8 PNKRM TKUM PNKUU UKOM NKOQM MKPMT NKORR MKPOP kçíÉëW=NK=mìäëÉ=ïáÇíÜ=äáãáíÉÇ=Äó=qgjK 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %K IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR IXFN 23N100 IXFN 24N100 50 20 TJ = 25°C VGS = 8-10V TJ = 25°C 7V 40 VGS = 10V 9V 8V 7V 6V 10 ID - Amperes ID - Amperes 15 30 20 6V 5 10 5V 5V 0 0 0 2 4 6 8 0 10 5 15 20 25 VCE - Volts VDS - Volts Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 20 20 TJ = 125°C VGS = 10V 9V 8V 7V 6V 15 ID - Amperes 16 ID - Amperes 10 12 8 O TJ = 125 C 10 TJ = 25OC 5 4 5V 0 0 0 4 8 12 16 20 VDS - Volts 2.4 RDS(ON) - Normalized VGS = 10V 2.0 1.8 ID = 24A 1.6 1.4 ID = 12A 1.2 1.0 0.8 25 50 75 100 125 150 TJ - Degrees C Figure 5. RDS(on) normalized to 0.5 ID25 value vs. TJ «=OMMM=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ 4 5 6 VGS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.2 3 Figure 4. Admittance Curves 7 8 IXFN 23N100 IXFN 24N100 20000 15 VDS = 500 V ID = 12 A IG = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 Crss 100 0 0 50 100 150 200 250 300 0 350 5 10 15 50 30 40 25 ID - Amperes ID - Amperes 30 35 40 100 125 150 Figure 7. Capacitance Curves Figure 6. Gate Charge TJ = 125oC 20 25 VDS - Volts Gate Charge - nC 30 20 TJ = 25oC 10 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 0 -50 2.5 -25 0 25 50 75 Case Temperature - oC VSD - Volts Figure 8. Forward Voltage Drop of the Intrinsic Diode Figure9. Drain Current vs. Case Temperature 0.300 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR