[£ii£u <=5£>ni-L.onaucto'i Lr'iodi JLCtl, j ^V£o^ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Una. BF 245 A BF 245 B BF246C IM-Channel Junction Field-Effect Transistors TELEPHONE: (973) 376-2922 (212) 227-6005 (973) 376-8960 AX BF 245 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 (10 A 3 DIN 41868). They are particularly suitable for use in dc, AF and RF amplifiers. DSG 2,5max L f$b —r —"i I— 12.7 mln -H I— 5,2 max Approx. weight 0.25 g r*~ 4,8 max Dimension* in mm Maximum ratings Drain-source voltage Drain-gate voltage (/s * 0) Gate-source voltage (/o = 0) Drain current Gate current Junction temperature Storage temperature range Total power dissipation (Tamb & 75°C)1) ±VDS +VDQ -VGS ID /a 30 30 30 25 10 3 150 Trtg Ptot -65 to +160 300 "thJA 5260 V V V mA mA "C °C mW Thermal resistance Junction to ambient air I K/W1) Static characteristics (Tj - 25 °C) Gate cutoff current Drain-source short-circuit current (Vbs=15V,V G s-0) £5 -/QSS £500 nA nA '^BfllGSS 230 V BF245A: BF245B: BF245C: /oss /DSS /OSS 2.0 to 6.5 6to15 12 to 26 mA2> BF245A: BF 245 B: BF245C: -Vfes -VQS -VQS 0.4 to 2.2 1.6 to 3.8 3.2 to 7.5 vzi V V -* 0.5 to 8.0 V 1X21 s| 3.0 to 6.5 \y22d 25 250 8 40 4.0 1.1 1.6 mS US US mS us ^ 700 MHz WF 1.6 dB -/ess (-VGS " 20 V. vbs - 0, 7, - 1 25'C) Gate-source breakdown voltage mA mA Gate-source voltage Gate-source pinch-off voltage (V/b s -16V,/D=10nA) Dynamic characteristics (ramb = 25 °C) Four-pole characteristics ( V b s * 1 6 V , V Q s - 0 , / = 1 kHz) (VDs " 15 V. VQS - 0, f = 200 MHz) (Vos " 20 V, -VQS = 1 V, f - 1 MHz) 011 1/2151 922s Ci j. C12. Cutoff frequency of short-circuit forward transfer admittance1 > Noise figure (V D s-1SV.V Q S »0 ( flj-1 f100MH»,r.mb-25l>C) C22, PF PF N I Semi-t vuiduciori reserves the right 10 change teal conditions. panmeMr limits wd packug« Uimcmions wilhom notice In formation furnished by NJ Svmi-Cunduclon a belwv«d to h« hiilh accurate and rdiubte H the lime of guinj to pros*. However M .nidutiors .IV.IMIKS IHI responsibility I'nr iiny ermrs or o.ni-isiniM Jijcuvcred in Us use NJ .Semi4.oiiduih.rs cncouriges ..,.: i,, 1,-n'ii ih n .l'iin-:h.vr<i iw . urn-ni tirSiie nliiciny iinli»r»