<£e.mi-Condu.cioi ZPioducti, fine. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input- and mixer stages especially for FM- and VHP TV-tuners up to 300 MHz. Features • Integrated gate protection diodes • High AGC-range • • High cross modulation performance Low noise figure • Low feedback capacitance • Low input capacitance -OD BF961 Marking: BF961 Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4=Gate 2 ^ -OS Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test Conditions Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation T a m b <60'C Channel temperature Storage temperature range Type Symbol VDS ID ±|Q1/G2SM Ptot —~~ ™» Value 20 30 10 200 TCM 150 Tstg -55 to +150 Unit V mA mA mW °C °C Maximum Thermal Resistance Tamb = 25°C, unless otherwise specified Parameter Channel ambient Test Conditions on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35u.m Cu Symbol Value- RthChA 450 Unit; K/W NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or*going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage V(BR)DS Min 20 +IGIS = 10 "A VG2S = VDS = 0 ±V(BR)G1SS +IG2S = 10 mA, VGis = VDS = 0 ±V(BR)G2SS Type Test Conditions l D =10jjA,-V G 1 s=-V G 2s = 4 V Symbol Typ Max Unit V 8 14 V 8 14 V ±VGis = 5 V, VG2S = VDS = 0 i'GISS 100 nA ±VG2S = 5V, VGis = VDS = 0 ±IG2SS 100 nA -VGis(OFF) 20 10.5 20 3.5 mA mA mA V -VG2S(OFF) 3.5 V Max Unit mS VDS = 15V, VGis = 0, VG2S = 4 V BF961 BF961A BF961B toss toss toss VDS = 15V, VG2s = 4V, !D = 20|iA <t VDS = 15V, VG1S = 0, ID = 20(|A 4 4 9.5 Electrical AC Characteristics VDS - 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25°C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure j Test Conditions VGis = 0, VG2S = 4 V > Symbol; Mint Typ 1X21,1 Qssgl Cisso2 crss 12 15 3.7 1.6 25 1.6 20 50 1.8 GOSS Gs = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to -2 V, f = 200 MHz Gs = 2 mS, GL = 0.5 mS, f = 200 MHz -0,35 Cos AGps F 2.5 PF PF fF PF dB dB dB