Dual N-Channel Silicon Junction Field

, Line.
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20
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Low-Noise Audio Amplifier
Equivalent to Crystalonics
CD860
Absolute maximum ratings at TA = 25°C
Reverse Gate Source & Reverse Gate Drain Voltage
- 20 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
400 mW
Power Derating
2.3 rnWfC
Storage Temperature Range
- 65°C to 200"C
At 25 C C free air temperature:
IFN860
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Leakage Voltage
Gate Source Cutoff Voltage
Mm
V (BR)GSS
Typ
Drain Saturation Current (Pulsed)
'DSS
Differential Gate Source Voltage
IVGS1~ VGS2
Max
-0.3
Unit
Test Conditions
V
IG = - 1 uA, VDS = 0v
3
nA
VGS = -10V, VDS = 0V
-3
V
VDS = 10V, lD = 100uA
-20
IGSS
VGS(OFF)
Process NJ450L
10
25
mA
VDS = 10V, VGS = 0V
mV
VDS = 10V, ! D = 1 0 0 u A
mS
VDS = 10V, lD = -10mA
f = 1 kHz
Dynamic Electrical Characteristics
Transconductance
9m
Common Source Input Capacitance
Hss
30
35
PF
VDS = 10V, ID = - 10 mA
f = 1 MHz
Common Source Reverse Transfer
Capacitance
Crss
17
20
PF
VDS = 10V, iD = - 1 0 m A
f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
GN
2
nV/\Hz
V D G -3V, ID = 10mA
f = 1 kHz
25
40
TO71
SEATING PLANE
OJ6jQ,
.019 <
(DIM A)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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