2N6040 - New Jersey Semiconductor

, One,
TELEPHONE: (973) 376-2922
(212)227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
FAX: (973) 376-8960
U.S.A.
2N6040 »hru2N6042 PNP (SILICON)
DARLINGTON
8 AMPERE
2N6043.hru 2x6045 NPN
MJE6040 ,hru MJE6042 PNP
MJE6043 ^ MJE 6045 NPN
PLASTIC MEDIUM-POWER
COMPLEMENTARY SILICON TRANSISTORS
. . . designed for general-purpose amplifier and low-speed switching
applications.
• High DC Current Gain hpE = 2500 (Typ) @ IG = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc < i >
v CEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
= 80 Vdc (Min) - 2N6041, 2N6044
= 100 Vdc (Min) - 2N6042,2N6045
• Low Collector Emitter Saturation Voltage — il
VcE(sat) = 2.0Vdc(Max) @ 1C = 4.0 Adc - 2N6040,41.2N6043.44
= 2.0 Vdc (Max) @> \ = 3.0 Adc - 2N6042, 2N6045
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 80 100 VOLTS
75 WATTS
2N6040 thru 2N6045
PIN 1 B A S E
2. C O L L E C T O R
3. EMITTER
• Monolithic Construction with Built-in Base Emitter
Shunt Resistors
CASE 199 04
• Thermopad High Efficiency Compact Package
(1) Applies to corresponding in house part numbers also.
MJE6040 thru MJE6045
•MAXIMUM RATINGS
Riling
Syrntml
Collector-Emitter Volume
Collector-BcM Voltage
ErnitterBw Volttge
CollKtor Current
Continuout
_VCEOJ
60
VCB
VEB
1^
60
P«k
>B
Tot* Device Oiuip.non te» Q
1HS042
2N604S
MJ66M.
MJE604E
Unit
100
Vdc
ao
ao
•
B« Current
—
100
Vdc
— so-
Vdc
80 —
16 —
Adc
120——
mAdc
o
O*r«te tbove 2b C
Tottf D«vic«Oiuip.lionl9iTA
2N8O40 2NGO41
2N6043 2 H6044
MJE6040 M E6O41
MJE6043 MJE6044
25°C
PD
Dvr.tt above 2S°C
uoer.ting .nd storage junction.
Ttmpcr.ture Rtnge
Tj,T,,,
_
?2
00175
—
-65 to » 150
Wills
«/°C
—
°C
TO127
THERMAL CHARACTERISTICS
ChVKl«.M
Thvfmjjl Rmttieinct. Junction to Amh ent
PIN 1 EMITTER
2. COLLECTOR
3. BASE
Symbol
M.,
"JC
16;
°C/W
»JA
57
°c;w
•,„««.,- JE DECH W »-.d 0.1.
Quality Semi-Conductors
Unit
2N6040 thru 2N6042 PNP (continued)
2N6043thru 2N6045 NPN
MJE6040 thru MJE6042 PNP
MJE6043 thru MJE6045 NPN
•ELECTRICAL CHARACTERISTICS
ITC • 26°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectonEmitter Sustaining Voltage
(I C . 100 mAdc I B - 01
Collector
(V C E
IVCE
IVCE
2N6040. 2N6043 MJE6040, MJE6043
2N6041. 2N6044. MJE6041. MJE6044
2N6042. 2N6O45 UJE6042. MJE6045
Cutoff Current
' 30 Vdc, IB • 01
- 40 Vdc. IB - 0)
' 50 Vdc, IB - 01
2N6040. 2N6043, MJE6040. MJE6O43
2N6041, 2N604-4. MJE6041, MJE6O44
2N6042 2N6045. MJE6042, MJE6045
"CEOItull
-
'CEX
Collector Cutoff Current
!V rB 60 Vdc. | E ' 01
(Vca 8 0 V d c ' l e 01
IV rB 100 Vdc, IE 01
ICBO
Emitter Cutoff Current
IV fl £ *) 0 V<tc, lc
-
mAdc
'CEO
Collector Cutoff Current
IVce '60 Vdc. VsEioffl " I.SVdcl 2N6040. 2N6043, MJE6040. MJE6043
IVCE 80 Vrtc. V B £ ( 0 t f | - 1 5 Vdc) 2N6041. 2N6O44, MJE6041. MJE6044
IV C E ' 100 Vdq. V B E I o ( f | ' 1 5 Vdcl 2N6042, 2N6M5. MJE6042. MJC6045
1VC6 - 60 Vdc. VBE|0|M - 1 5 Vdc.
TC - 125°CI
2N6040. 2N6043. MJE6040. MJE6043
(VcE 80V*. VBE|0),| 1 5 Vdc.
T c - 125°C]
2N6041. 2N6044. MJE6041. MJE6044
IVCE 100 Vdc, V BE | oM , - 1 5 Vdc,
T C - 125°C]
2N6042, 2N6M5. MJE6042. MJE604S
2N6040. 2N6043. MJE6040. MJE6043
2N6041.2N6044, MJE6041. MJ66O44
2N6M2. 2N604b, MJE6042. MJE604B
Vdc
SO
80
100
05
05
OS
as
mAdc
05
0$
50
-
50
50
mAdc
05
OS
05
mAdc
'EDO
20
01
ON CHARACTERISTICS
DC Current Gam
llc 4 0 A 1c VfE 4 0 V t l r l 2N604041 ?NB043 44 MJEG04041 MJE6043.44
li t - ;j 0 A l<- V(-E 4 0 V i t c l 2N6042 ?NtiO4r, MJEG042 MJEG04b
D[- H O A t r , VrE 4 0 Viti 1 All Types
Collector Emit er Saturation Voltage
IIC 4 0 A t c IB IGmAdcl 2N6O40.4I.2N6043.44.MJE6040.41 .MJE6043.44
' I C ' J O A k I Q 12 mAdc)' 2N6042 2N6O45 MJEG042 MJEG045
DC R O A I c . IB HOmA.le) All Types
"FE
1000
1000
20.000
20000
100
v CElutl
Vdc
-
-
8aseEmitter Saturation Voltage
llrj 8 0 Aitc, ly 80 mAdcl
vBEIs«tl
gase E miller On Voltag«
llc - 4 0 Adc, VCE 4 0 Vifc)
v BE(onl
20
20
40
(
Vdc
45
Vdc
28
DYNAMIC CHARACTERISTICS
Current Gain Randwulth Product
IIC 3 0 Ailc. V(;E 4 0 Vdc, f
Outout Cdoacitance
IVCB 10 Vdc. IE
MHz
Irifel
40
1 0 MH/I
Cob
0,1
OlMHil
Small Signal Current Gam
HC 3 0 A i l c . V C6 4 0 Vdc. f
300
200
2N6040/2N6W2.MJE6040/MJE6042
2N6CW3/7N6O45, MJEG04:I/MJEG045
"fe
IQkH^I
•Indicates JEDEC Registered Data
* Choice of Packages: MJE6040 - MJE6045 (TO-127)
MJE6040T - MJE6045T (TO220AB)
300
-
, Pf
-
'
STYLE 2
PIN 1 EMITTER
2 COLLECTOR
3 BASE
MILLIMETERS
DIM MIM
MAX
A
9
C
0
F
6
H
J
K
M
0
R
U
V
16.13
12.57
16.39
12.83
3.18
1.09
3.51
3.43
1.24
3.76
4.2 BSC
2.67
2.92
INCHES
MIN MAX
0.635
0.495
0.125
0.043
0.138
0.1M
0.105
0.813 0.964 6.41
15.11 1648
059
!6
»* rvp.
4.70
1.91
6.22
2.03
4.95
2.16
6.49
-
0195
0.175
0.4! i
TTiO
TO 225AB
0.645
0.505
0.135
0.049
0.149
BSC
0.115
0.034
0.645
YP
0.195
0.095
0.255
MIUH 11 IBS
WCIES
MM inx M • MAX
A
14.80 IS 75 0.5 75 0.620
8
9.8S 1029 o.: 80 11405
C
4.08
4.82 0.1 80 11.190
0
0.64
0.88 0.1 25 0.035
f
381
3.73 0.1 42 0.147
2.41
t
2.87 0( IS 0.105
M
2.79
3.93 0.1 10 0155
J
038
058 O.f 14 0.022
K
1270 1427 05 M 0.562
I
1.14
1.19 O.C 45 0.055
4.83
5.33 0.1 HI 0.210
•
i.84
304 0.1 W 0.120
II
1
;.04 t-"..i:
11
1.14
I'
1.1
1.
DIM
T
U
¥
I
5.97
0.00
1.14
-
••' ! . J «
117
0.
.!'!
i.l ( "
0.0. U
2.03
TO220AB
0.080
STYLE I
PIN I BASE
2 COUtCTOR
3 EMITTED
4 COLLECTOR
NOTES
. I DIMENSION H APPLIES TO ALL LEAOS
2 DIMENSION L APPLIES TO LEAOS I
AND 3
3 DIMENSION I DEFINES 1 ZONE WHERE
ALL BODY AND LEAO IRREGULARITIES
ARE ALLOWED
4 DIMENSIONING AND TDLERANCING PER
ANSI YI4 SM. 191]
5 CONTROLLING DIMENSION INCH