MJE1660, MJE1661 - New Jersey Semiconductor

Una.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
15 AMPERE
POWER TRANSISTORS
NPN
SILICON
MJE1660, MJE1661
40-60 VOLTS
90 WATTS
SILICON
MEDIUM-POWER TRANSISTORS
. designed for use in power amplifier and switching applications.
High Collector Current 1C = 15 Adc
High DC Current Gain = 1 0 ( M i n ) @ l c = 15 Adc
-«-B-»-
u r.
^-
^f
f&i ~~i
\
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Total Power Dissipation @ TC ™ 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
MJE1660
MJE16K1
Unit
V CEO
40
60
Vdc
VCB
VEB
>c
IB
PD
40
60
Vdc
Tj. T stg
Jt°
Hoi-*- RI ±
—*
t" •• "J-j c.
5.0
Vdc
DIM
15
Adc
A
B
5.0
Adc
90
072
Watts
-65 to +150
°C
C
D
F
G
H
J
K
W/°C
M
Q
R
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance. Junction to Case
t
Hh
1~5"3
Symbol
Max
Unit
"JC
1 39
°C/W
U
V
MILLIMETERS
WIN
MAX
16.13
12.57
3.18
109
3.51
42
267
0.813
15.11
9°
470
1.91
622
203
M
/i
1638
12.83
3.43
124
3.76
BSC
2.92
Q.864
16.38
FYP
4.95
2.16
648
-
\
uk
t
- ' -7
K
*
-UUj
STYLE 2
PIN ( . E M I T T E R
2 COLLECTOR
3. BASE
INCHES
MIN
MAX
0.636
0495
0.125
0.043
0.138
0.16
0.105
0.032
0.596
9°
0.185
0.075
0.245
0.080
0.645
0.505
0.135
0.049
0.146
BSC
0.115
0.034
0645
'YP
0.195 J
0.085
^0.255
-
VVhen mounting the d*vic*. torqu* not
t o exceed 8 0 in.-lb.
1f lead bending is required, use suitable
c lamps or other support* between tran9
istor case and point of bend.
TO-225AB TYPE
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage HI
( l c = 200mAdc. IB = 0)
Symbol
Collector Cutoff Current
(V CB = 40 Vdc, IE - 0)
(V CB = 60 Vdc. IE - 0)
Emitter Cutoff Current
(V BE = 5.0 Vdc, IE - 0)
Max
40
60
-
'CEO
_
mAdc
1.0
mAdc
'CES
MJE 1660
MJE 1661
-
0.7
0.7
-
0.7
0.7
-
1.0
20
10
100
-
1.8
—
2.5
3.0
-
25
-
mAdc
'CBO
.MJE 1660
MJE 1661
Unit
Vdc
v CEO(sus)
MJE 1660
MJE1661
Collector Cutoff Current
(V CE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc. VBE = 0)
(VCE ' 60 Vdc, V BE = Ol
Win
mAdc
'EBO
ON CHARACTERISTICS
DC Current Gam (11
(lc = 5.0 Adc, VCE " 4.0 Vdc)
(l c = 15 Adc, VCE = 4.0 Vdcl
_
"FE
Collector-Emitter Saturation Voltage HI
( l c = 15 Adc, IB = 1.5 Adc)
v CE(sat)
Base-Emitter on Voltage (1)
dc = 15 Adc, VCE = 4.0 Vdc)
v BE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
d C = 1.0 Adc, VCE = 10 Vdc, f = 1.0MHz)
<T
Small-Signal Current Gain
<l c = 1.0 Adc, V CE = 10 Vdc, f = 1.0 kHz)
hfe
<1| Pulse Test: Pulse Width< 3OO MS. Duty Cycle^ 2.0%.
MHz
_