TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN DARLINGTON 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain h>E - 3000 (Typ) @> IC - 4.0 Adc • Collector-Emitter Sustaining Voltage - 9 100 mA VcEO(sus) - 60 Vdc (Win) - 2N60S3, 2N6055, 2N6298, 2N63QO = 80 Vdc (Win) - 2N60S4, 2N6056, 2N6299, 2N6301 • Low Collector- Emitter Saturation Voltage VcE(sat) • 2.0 Vdc (Max) @> lc = 4.0 Adc = 3 0 Vdc (M»*! I?) lc = 8.0 Adr • Monolithic Construction with Built-in Base-Emitter Shunt Resistors COMPLEMENTARY SILICON POWER TRANSISTORS 60-80VOLTS 75,100 WATTS •MAXIMUM RATINGS 2N6053 2N6055 2N6298 Symbol 2N6300 Rating 2N6064 2N6056 2N6299 2N6301 Unit Collector-Emitter Voltage VcECi 60 80 Vdc Collector-Bale Voltage Emitter Ban Voltage VCB VEB 'c SO 80 Vdc Collector Currant — Continuous Peak Baie Current 'B Total Device Dissipation @ Tc - 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD Tj.Tstg 5.0 Vdc 8.0 16 Adc 120 mAdc 2N6O53 2N60S4 2N6053 2N6056 2NB29R 2N8299 2N6300 2N6301 100 0.571 75 0.428 -65 to +200 Watts W/°C °C (TO-31 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 2N6053 2IM6054 2N6O55 Symbol 2N6056 f«JC 1.75 2N6298 2N6299 2N6300 2N6301 Unit 2.33 °C/W •Indicates JEDEC ntginarid Data. FIGURE 1 - POWER DERATING I" s WOa' thra !MI3of\ 175 200 ITO-MI N.) .Scmi-C onduclon reserves the right lo change lest conditions, parameter limit* nnd package Jimensicms without notice Intbrmation lumishtd by NJ Stmi-Cunduclori is believed to he hulh accurate and reliiible ^t the time of going to press. However VI Seini-C iindutlors .bMiines »»reiptmsibiliiy foi my errors ,-r omissiiiiM Jiscuvcred in its use NJ .Semi-t_oiidiKti.rs cn ii-Irnii-fi fi> it ii'» lh.il ilnlivjIn'.'M in-, iirrr'nthefiirc nlncilll! .inlHr« •ELECTRICAL CHARACTERISTICS ITC - 25°C unkmoth»rwlia notadl L OFF CHARACTERISTICS Characteriatic Collector-Emitter Sustaining Voltage Ol (IC - 100 mAdc, IB - 01 Collector Cutoff Current (VCE - 30 Vdc, IB - 01 |VCE - 40 Vdc. IB - 0) | Symbol VcEO(iui) 2N60S3, 2N6055, 2N6298, 2N630O 2N6054, 2N6056, 2N6299, 2N6301 Mln so | Man | Unit Vdc - 80 'CEO 2N60S3, 2N605S. 2N6298, 2N63OO 2N6054, 2N60S6, 2N6299, 2N6301 Collector Cutoff Current I VC6 - Rated VCB. VBEtom - 1.6 Vdd (VCE - Rated VCB. vBEtoff) ' ' 5 Vdc. Tc - t50°C) 'CEX Emitter Cutoff Current 'EBO IVBE -5.0 Vdc, IC-DI I mAdc - . O.S 0.5 - 0.5 $.0 _ 2.0 750 100 18000 — — 2.0 3.0 — 4.0 - 2.8 mAdc mAdc ON CHARACTERISTICS(1) DC Current Gain (lc - 4.0 Adc. VCE - 3.0 Vdc) (1C - 8.0 Add, VcE - 3.0 Vdcl hFE Collector-Emitter Saturation Voltage (1C - 4.0 Adc. IB • 16 mAdc) (<C - 8.0 Adc, IB • 80 mAdc) VCE(sat) Ban-Emitter Saturation Voltage (lc -8.0 Adc, IB -80 mAdc) vBE(sat) Base-Emitter On Voltage (1C - 4.0 Adc, VCE - 3.0 Vdc) vBE(onl - • Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Current Transfer Ratio (1C " 3.0 Adc, VcE - 3.0 Vdc, f - 1 jO MHz) N Output Capacitance (VCB * 10Vdc,l E -0.f-0.1 MHz) Cob 2N6053. 2N6054, 2N6298, 2N6299 2N6055, 2N60S6. 2N6300. 2N6301 Small-Signal Current Gain (lc - 3.0 Adc, VgE - 3.0 Vdc, f - 1.0 kHz) . 4.0 _ - 300 200 300 - pF nfe ~ |