, Dnc.
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5871,1*5872, ™6317, ^6318 PNP (SILICON)
2N5873,3N5874, ™6315,™6316NPN
COMPLEMENTARY SILICON
MEDIUM-POWER TRANSISTORS
7.0 AMPERE
. . . designed for general-purpose power amplifier and switching
applications.
•
Low Collector-Emitter Saturation Voltage -
•
VCEIsatl = 1-0 Vdc (Max) @> Ic = 4.0 Adc
Low Leakage Current - ICEX = °'25 mAdc (Max)
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS
•
Excellent DC Current Gain - hpE " 20 (Min) @ Ic = 2.5 Adc
•
High Current Gain — Bandwidth Product —
•
Choice of Packages - TO-3 - 2N5871/2N5874
TO-66-2N6315/2N6318
115 WATTS -TO-3
90 WATTS - TO-66
fr =• 4.0 MHz @ l c = 0.25 Adc
"MAXIMUM RATINGS
Riling
Collector Emitter Voltage
Symbol
2N5871
2N5873
2N6315
2N6317
2NS872
2NS874
2N6316
2N6318
VCEO
60
80
2N5871/2NB874
VCB
•Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current - Continuous
Peak
70
15
2N5871
Series
2N6315
Series
115
90
0.518
PD
Total Device Dissipation ® TC • 25°C
Derate above 25°C
0.658
Operating and Storage junction
Temperature Range
Watts
W/°C
-65 to +200
Tj.Tstg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
»JC
' 2NS871 '
2N5872
2N5873
2N5874
1 52
2N6315
2N6316
2N6317
2N6318
Unit
All JEDEC dimtmioni «nd nolti if
°C/W
1.94
ColiKlor tgnntcttd to CM
'Indicates JEDEC registered data. Limits and conditions differ on some para eters and
pr.wnt JEDEC registered data,
2N6315/2IM6318
§
1
WATTS]
FIGURE 1 - POWER DERATING
\N
k.
X, X
2N5871 Itm 2NS
2N6 15 thru ! 16318^
174
^X Kv
^xiN
SN-^
0
25
50
75
100
125
150
X
175
200
TC. CASE TEMPERATURE (°CI
Safe Area Limits are Indicated by Figures 5 and 6. Both limits ere applicable
and must be observed.
Qualify Semi-Conductors
PtN MASf
2, EMITTEA
All JEOEC diraMMiOTi w*1 Milt »WV
^S^mi-^onductor ^PioduaU,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N5871, 2N5872, 2N6317, 2N6318 PNP (continued)
2N5873, 2N5874, 2N6315, 2N6316 NPN
•ELECTRICAL CHARACTERISTICS <TC = 25°c unless otherwise noted)
ChirwnrMic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
<IC - 100 mAdc, IB > 0)
Collector Cutoff Current
IVCE - 30 Vdc, IB ' 0)
(VCE - 40 Vdc, IB - 01
Collector Cutoff Current
( VCE - 60 Vdc. VBE(o{f| * 1 .5 Vdcl
IVC£ = 80 Vdc. V BE(off) - 1.5 Vdc)
60
80
—
—
-
0.5
-
O.S
-
0.25
0.25
mAdc
'CEO
2N5871.2N5873.2N631S.2N6317
2N5872,2N5874.2N6316,2N6318
ICEX
2N5871.2N5873.2N6315.2N6317
2N5872,2N5874.2N6316,2N6318
(VCE = 60 Vdc VBE(off) -1.5 Vdc.TG =150°C)2N5871,2N5873,2N6316,2N6317
|VCE = 80 Vdc,VBE(off) -1.5 Vdc,Tc = 150°C) 2N5872,2N5874,2N6316.2N6318
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
|VCB - 80 Vdc, IE = 01
Vdc
VcEOInit)
2N5871.2N5873.2N6315.2N6317
2N6872.2N5874.2N6316.2N6318
mAdc
-
2.0
-
2.0
-
0.25
0.25
ICBO
2NS871.2N5873.2N6315.2N6317
2N5872,2N5874.2N6316.2N6318
Emitter Cutoff Current
(VEB = 5.0Vdc, IC = 0)
'EBO
mAdc
_
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(lc • 0.5 Adc, VCE - 4.0 Vdc)
_
hFE
-
20
100
4.0
-
-
1.0
-
2.0
-
2.5
Vdc
vBE(on)
-
1.5
Vdc
*T
4.0
-
MHz
Cob
_
IIC " 2.5 Adc. VCE " 4-° vdcl
(1C- 7.0 Adc, VCE "4.0 Vdc)
Collector-Emitter Saturation Voltage (1)
dC "4.0 Adc, IB = 0.4 Add
35
Vdc
VcE(sat)
(IC= 7.0 Adc, IB = 1.75 Adc)
Base-Emitter Saturation Voltage 11)
M C = 7.0 Adc, IB = 1.75 Adc)
vBE(sat)
Base- Emitter On Voltage (1)
(1C -2-6 Adc, VCE -4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product 121
IIC - 0.2S Adc, VCE =• 10 Vdc. ftest = 1.0 MHz)
Output Capacitance
(V C B = 1<> vd<=. IE - 0, f • 1.0 MHz)
2N5871,2N5872,2N6317,2N6318
2N5873,2N5874,2N6315,2N6316
Small-Signal Current Gain
|lc = 0.5 Adc, VCE * 4.0 Vdc. f = 1.0 kHz)
"fe
20
PF
300
200
~
—
SWITCHING CHARACTERISTICS
_
Rise Time
Storage Time
tr
Fall Time
tf
•Indicates JEDEC Registered Data.
(1) Pulse Test: PglM Width S 3OO ps. Duty Cycl«^2 0%.
l 2 ) f T - l h f , |«f,.«
Quality Semi-Conductors
Is
—
0.7
MS
1.0
M>
0.8
Ml