CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 25 Volts CHM65A3PAPT CURRENT 38 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. (TO-252A) .280 (7.10) .238 (6.05) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) CONSTRUCTION * N-Channel Enhancement (1) (3) (2) .035 (0.90) .025 (0.64) .417 (10.6) .346 (8.80) .261 (6.63) .213 (5.40) .220 (5.59) .195 (4.95) .102 (2.59) .078 (1.98) .024 (0.61) .016 (0.40) 1 Gate D (3) CIRCUIT 2 Source 3 Drain( Heat Sink ) (1) G Dimensions in inches and (millimeters) S (2) Absolute Maximum Ratings Symbol VDSS VGSS TO-252A TA = 25°C unless otherwise noted Parameter CHM65A3PAPT Units Drain-Source Voltage 25 V Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 60 ID A - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ TSTG 200 56 W Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2007-06 ELECTRICAL CHARACTERISTIC ( CHM65A3PAPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA 1 3 VGS=10V, ID=38A 10 13 VGS=4.5V, ID=24A 15 20 V mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 935 VDS = 15V, VGS = 0V, f = 1.0 MHz 220 pF 110 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=15V, ID=38A VGS=10V 16 25 nC 3.0 3.0 t on Turn-On Time V DD= 15V tr Rise Time I D =38A , VGS = 4.5 V 8 16 t off Turn-Off Time RGEN= 16 Ω 55 110 tf Fall Time 20 40 25 50 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current 38 A V SD Drain-Source Diode Forward Voltage I S = 38A , VGS = 0 V 1.3 V RATING CHARACTERISTIC CURVES ( CHM65A3PAPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 30 50 25 40 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) V G S =1 0 , 9 , 5 V 20 15 VG S =4 . 0 V 15 20 TJ=125°C VG S =3 . 0 V 0 TJ=-55°C 3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 4.0 1.0 0 VGS=10V ID=38A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 4 8 Qg , TOTAL GATE CHARGE (nC) 12 16 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 4.0 Figure 4. On-Resistance Variation with Temperature VDS=15V ID=38A THRESHOLD VOLTAGE 3.0 2.2 10 Vth , NORMALIZED GATE-SOURCE 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 1.3 TJ=25°C 10 5 0 30 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200